Works matching DE "EFFECT of radiation on semiconductors"

Results: 22

Investigation of orientational order in a nematic liquid crystal with semiconductor CdSe/Zns QDs by IR spectroscopy.

Published in:

Optics & Spectroscopy, 2016, v. 120, n. 2, p. 250, doi. 10.1134/S0030400X16020144

By:

Konshina, E.;
Gavrish, E.;
Vangonen, A.

Publication type:

Article

Frequency and density dependent radiative recombonation processes in III-V semiconductor quantum wells and superlattices.

Published in:

Advances in Physics, 1991, v. 40, n. 5, p. 535, doi. 10.1080/00018739100101522

By:

Cingolani, Roberto;
Ploog, Klaus

Publication type:

Article

Investigation of Characteristics of Semiconductor Detectors of a-C/n-Si Heterostructure and p-n Junctions by Means of Registration of Charged Particles.

Published in:

Armenian Journal of Physics, 2013, v. 6, n. 3, p. 132

By:

Ohanyan, K. S.

Publication type:

Article

Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface.

Published in:

Semiconductors, 2018, v. 52, n. 3, p. 324, doi. 10.1134/S1063782618030156

By:

Lenshin, A. S.

Publication type:

Article

Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon.

Published in:

Semiconductors, 2018, v. 52, n. 3, p. 331, doi. 10.1134/S1063782618030077

By:

Bilenko, D. I.;
Belobrovaya, O. Ya.;
Terin, D. V.;
Galushka, V. V.;
Galushka, I. V.;
Zharkova, E. A.;
Polyanskaya, V. P.;
Sidorov, V. I.;
Yagudin, I. T.

Publication type:

Article

Comparison of the radiation hardness of silicon and silicon carbide.

Published in:

Semiconductors, 2014, v. 48, n. 10, p. 1293, doi. 10.1134/S1063782614100170

By:

Lebedev, A.;
Kozlovski, V.

Publication type:

Article

Charge spectroscopy of SiO layers with embedded silicon nanocrystals modified by irradiation with high-energy ions.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 582, doi. 10.1134/S1063782611050034

By:

Antonova, I.;
Smagulova, S.;
Neustroev, E.;
Skuratov, V.;
Jedrzejewski, J.;
Savir, E.;
Balberg, I.

Publication type:

Article

Effect of a high-energy proton-irradiation dose on the electron mobility in n-Si crystals.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 572, doi. 10.1134/S106378261105023X

By:

Pagava, T.;
Maisuradze, N.;
Beridze, M.

Publication type:

Article

Vadim Valentinovich Emtsev (On his 70th birthday).

Published in:: Semiconductors, 2011, v. 45, n. 5, p. 703, doi. 10.1134/S1063782611050149
Publication type:: Article

Generation of superradiation in quantum dot nanoheterostructures.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 714, doi. 10.1134/S1063782608060134

By:

Savelyev, A. V.;
Karachinsky, L. Ya.;
Novikov, I. I.;
Gordeev, N. Yu.;
Seisyan, R. P.;
Zegrya, G. G.

Publication type:

Article

Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 689, doi. 10.1134/S1063782608060092

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Klad'ko, V. P.;
Konakova, R. V.;
Kudrik, Ya. Ya.;
Kuchuk, A. V.;
Milenin, V. V.;
Sveshnikov, Yu. N.;
Sheremet, V. N.

Publication type:

Article

Energy characteristics of excitons in structures based on InGaN alloys.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 720, doi. 10.1134/S1063782608060146

By:

Usov, S.;
Tsatsul’nikov, A.;
Lundin, V.;
Sakharov, A.;
Zavarin, E.;
Sinitsyn, M.;
Ledentsov, N.

Publication type:

Article

The effect of damaging radiation ( p, e, γ) on photovoltaic and tunneling GaAs and GaSb p-n junctions.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 732, doi. 10.1134/S1063782607060231

By:

Andreev, V.;
Evstropov, V.;
Kalinovskiĭ, V.;
Lantratov, V.;
Khvostikov, V.

Publication type:

Article

Influence of Electronic (Charge) State of E Traps on Their Introduction Rate in Irradiated n-GaAs.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 20, doi. 10.1134/1.1538533

By:

Brudnyi, V.N.;
Peshev, V.V.

Publication type:

Article

Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 433, doi. 10.1007/s11664-010-1411-1

By:

Catalfamo, Frank;
Yen, Tingfang;
Yun, Juhyung;
Anderson, Wayne

Publication type:

Article

Radiation-Induced Electrical Conductivity of Nanocomposite Materials.

Published in:

Technical Physics, 2018, v. 63, n. 6, p. 838, doi. 10.1134/S1063784218060117

By:

Dyuryagina, N. S.;
Yalovets, A. P.

Publication type:

Article

Influence of Impurities on the Radiation Response of the TlBr Semiconductor Crystal.

Published in:

Advances in Materials Science & Engineering, 2017, p. 1, doi. 10.1155/2017/1750517

By:

dos Santos, Robinson Alves;
de Mesquita, Carlos Henrique;
da Silva, Júlio Batista Rodrigues;
Ferraz, Caue de Melo;
da Costa, Fabio Eduardo;
Martins, João Francisco Trencher;
Gennari, Roseli Fernandes;
Hamada, Margarida Mizue

Publication type:

Article

Optically stimulated luminescence response of commercial SiO2 optical fiber.

Published in:

Journal of Radioanalytical & Nuclear Chemistry, 2008, v. 277, n. 1, p. 125, doi. 10.1007/s10967-008-0719-2

By:

Espinosa, G.;
Bogard, J. S.

Publication type:

Article

CORRIGENDUM:: "FERMI LIQUID MODEL OF RADIATION INDUCED MAGNETORESISTANCE OSCILLATIONS IN GaAs/AlxGa1-xAs HETEROSTRUCTURE TWO-DIMENSIONAL ELECTRON SYSTEM".

Published in:

2011

By:

TOYODA, TADESHI

Publication type:

Erratum

Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors.

Published in:

Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena, 2015, v. 170, n. 5, p. 377, doi. 10.1080/10420150.2015.1010170

By:

Yadav, Anupama;
Flitsiyan, Elena;
Chernyak, Leonid;
Hwang, Ya-Hsi;
Hsieh, Yueh-Ling;
Lei, Lei;
Ren, Fan;
Pearton, Stephen J.;
Lubomirsky, Igor

Publication type:

Article

DEEP LEVEL DEFECTS IN SILICON CARBIDE.

Published in:

International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 3, p. 779, doi. 10.1142/S0129156406004028

By:

LEBEDEV, A. A.

Publication type:

Article

Application of the Tris(acetylacetonato)iron(III)/(II) Redox Couple in p-Type Dye-Sensitized Solar Cells.

Published in:

Angewandte Chemie International Edition, 2015, v. 54, n. 12, p. 3758, doi. 10.1002/anie.201409877

By:

Perera, Ishanie Rangeeka;
Ohlin, C. André;
Spiccia, Leone;
Daeneke, Torben;
Bach, Udo;
Makuta, Satoshi;
Tachibana, Yasuhiro;
Yu, Ze;
Mishra, Amaresh;
Bäuerle, Peter

Publication type:

Article

Works matching DE "EFFECT of radiation on semiconductors"

Investigation of orientational order in a nematic liquid crystal with semiconductor CdSe/Zns QDs by IR spectroscopy.

Frequency and density dependent radiative recombonation processes in III-V semiconductor quantum wells and superlattices.

Investigation of Characteristics of Semiconductor Detectors of a-C/n-Si Heterostructure and p-n Junctions by Means of Registration of Charged Particles.

Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface.

Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon.

Comparison of the radiation hardness of silicon and silicon carbide.

Charge spectroscopy of SiO layers with embedded silicon nanocrystals modified by irradiation with high-energy ions.

Effect of a high-energy proton-irradiation dose on the electron mobility in n-Si crystals.

Vadim Valentinovich Emtsev (On his 70th birthday).

Generation of superradiation in quantum dot nanoheterostructures.

Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride.

Energy characteristics of excitons in structures based on InGaN alloys.

The effect of damaging radiation ( p, e, γ) on photovoltaic and tunneling GaAs and GaSb p-n junctions.

Influence of Electronic (Charge) State of E Traps on Their Introduction Rate in Irradiated n-GaAs.

Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors.

Radiation-Induced Electrical Conductivity of Nanocomposite Materials.

Influence of Impurities on the Radiation Response of the TlBr Semiconductor Crystal.

Optically stimulated luminescence response of commercial SiO<sub>2</sub> optical fiber.

CORRIGENDUM:: "FERMI LIQUID MODEL OF RADIATION INDUCED MAGNETORESISTANCE OSCILLATIONS IN GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As HETEROSTRUCTURE TWO-DIMENSIONAL ELECTRON SYSTEM".

Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors.

DEEP LEVEL DEFECTS IN SILICON CARBIDE.

Application of the Tris(acetylacetonato)iron(III)/(II) Redox Couple in p-Type Dye-Sensitized Solar Cells.