Works matching DE "EFFECT of radiation on semiconductors"
Results: 21
Influence of Impurities on the Radiation Response of the TlBr Semiconductor Crystal.
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- Advances in Materials Science & Engineering, 2017, p. 1, doi. 10.1155/2017/1750517
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- Article
Optically stimulated luminescence response of commercial SiO<sub>2</sub> optical fiber.
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- Journal of Radioanalytical & Nuclear Chemistry, 2008, v. 277, n. 1, p. 125, doi. 10.1007/s10967-008-0719-2
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- Article
Investigation of Characteristics of Semiconductor Detectors of a-C/n-Si Heterostructure and p-n Junctions by Means of Registration of Charged Particles.
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- Armenian Journal of Physics, 2013, v. 6, n. 3, p. 132
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- Article
Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon.
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- Semiconductors, 2018, v. 52, n. 3, p. 331, doi. 10.1134/S1063782618030077
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- Article
Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface.
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- Semiconductors, 2018, v. 52, n. 3, p. 324, doi. 10.1134/S1063782618030156
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- Article
Comparison of the radiation hardness of silicon and silicon carbide.
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- Semiconductors, 2014, v. 48, n. 10, p. 1293, doi. 10.1134/S1063782614100170
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- Article
Radiation-Induced Electrical Conductivity of Nanocomposite Materials.
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- Technical Physics, 2018, v. 63, n. 6, p. 838, doi. 10.1134/S1063784218060117
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- Article
DEEP LEVEL DEFECTS IN SILICON CARBIDE.
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- International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 3, p. 779, doi. 10.1142/S0129156406004028
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- Article
Investigation of orientational order in a nematic liquid crystal with semiconductor CdSe/Zns QDs by IR spectroscopy.
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- Optics & Spectroscopy, 2016, v. 120, n. 2, p. 250, doi. 10.1134/S0030400X16020144
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- Article
Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 433, doi. 10.1007/s11664-010-1411-1
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- Article
Charge spectroscopy of SiO layers with embedded silicon nanocrystals modified by irradiation with high-energy ions.
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- Semiconductors, 2011, v. 45, n. 5, p. 582, doi. 10.1134/S1063782611050034
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- Article
Effect of a high-energy proton-irradiation dose on the electron mobility in n-Si crystals.
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- Semiconductors, 2011, v. 45, n. 5, p. 572, doi. 10.1134/S106378261105023X
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- Article
Vadim Valentinovich Emtsev (On his 70th birthday).
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- Semiconductors, 2011, v. 45, n. 5, p. 703, doi. 10.1134/S1063782611050149
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- Article
Generation of superradiation in quantum dot nanoheterostructures.
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- Semiconductors, 2008, v. 42, n. 6, p. 714, doi. 10.1134/S1063782608060134
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- Article
Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride.
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- Semiconductors, 2008, v. 42, n. 6, p. 689, doi. 10.1134/S1063782608060092
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- Article
Energy characteristics of excitons in structures based on InGaN alloys.
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- Semiconductors, 2008, v. 42, n. 6, p. 720, doi. 10.1134/S1063782608060146
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- Article
The effect of damaging radiation ( p, e, γ) on photovoltaic and tunneling GaAs and GaSb p-n junctions.
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- Semiconductors, 2007, v. 41, n. 6, p. 732, doi. 10.1134/S1063782607060231
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- Article
Influence of Electronic (Charge) State of E Traps on Their Introduction Rate in Irradiated n-GaAs.
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- Semiconductors, 2003, v. 37, n. 1, p. 20, doi. 10.1134/1.1538533
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- Article
Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors.
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- Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena, 2015, v. 170, n. 5, p. 377, doi. 10.1080/10420150.2015.1010170
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- Article
CORRIGENDUM:: "FERMI LIQUID MODEL OF RADIATION INDUCED MAGNETORESISTANCE OSCILLATIONS IN GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As HETEROSTRUCTURE TWO-DIMENSIONAL ELECTRON SYSTEM".
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- 2011
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- Erratum
Application of the Tris(acetylacetonato)iron(III)/(II) Redox Couple in p-Type Dye-Sensitized Solar Cells.
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- Angewandte Chemie International Edition, 2015, v. 54, n. 12, p. 3758, doi. 10.1002/anie.201409877
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- Article