Ferromagnetism in epitaxial germanium and silicon layers supersaturated with managanese and iron impurities.
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- JETP Letters, 2006, v. 83, n. 12, p. 568, doi. 10.1134/S0021364006120095
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- Article
Works matching DE "EFFECT of low temperature on Hall effect devices"
Results: 2
1
2
Evidence for the ballistic intrinsic spin Hall effect in HgTe nanostructures.
- Published in:
- Nature Physics, 2010, v. 6, n. 6, p. 448, doi. 10.1038/nphys1655
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- Publication type:
- Article