Works about DYNAMIC random access memory

Results: 265

Low-Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 43, p. n/a, doi. 10.1002/adfm.201703545

By:

Woo, Myung Hun;
Jang, Byung Chul;
Choi, Junhwan;
Lee, Khang June;
Shin, Gwang Hyuk;
Seong, Hyejeong;
Im, Sung Gap;
Choi, Sung‐Yool

Publication type:

Article

Conception of Stretchable Resistive Memory Devices Based on Nanostructure-Controlled Carbohydrate- block-Polyisoprene Block Copolymers.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 13, p. n/a, doi. 10.1002/adfm.201606161

By:

Hung, Chih‐Chien;
Chiu, Yu‐Cheng;
Wu, Hung‐Chin;
Lu, Chien;
Bouilhac, Cécile;
Otsuka, Issei;
Halila, Sami;
Borsali, Redouane;
Tung, Shih‐Huang;
Chen, Wen‐Chang

Publication type:

Article

Studies of structural, dielectric and electrical characteristics of YBaCuFeO5 ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 19, p. 15704, doi. 10.1007/s10854-022-08473-6

By:

Sahoo, Rashmi Rekha;
Choudhary, R. N. P.

Publication type:

Article

Robust thermal stability in DRAM-like Sb2Te-based phase change memory by Hafnium modified.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 13, p. 10423, doi. 10.1007/s10854-022-08029-8

By:

Wang, Ruobing;
Yuan, Zhenhui;
Chen, Xin;
Song, Sannian;
Song, Zhitang

Publication type:

Article

Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 19, p. 24107, doi. 10.1007/s10854-021-06874-7

By:

Liu, Yaodong;
Xu, Jing;
Gao, Jianfeng;
Liu, Jinbiao;
Zhang, Dan;
Zhou, Xuebing;
Sun, Xianglie;
Li, Yongliang;
Li, Junfeng;
Zhao, Chao;
Wang, Wenwu;
Chen, Dapeng;
Ye, Tianchun;
Luo, Jun

Publication type:

Article

Phase-change characteristics of carbon-doped GeSbSe thin films for PRAM applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 23, p. 20751, doi. 10.1007/s10854-019-02442-2

By:

Kim, J. H.;
Park, J. H.;
Ko, D.-H.

Publication type:

Article

Diffusion phase transition and aging properties induced by B-site disorder in Na-doped barium strontium titanium ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 12, p. 5581, doi. 10.1007/s10854-014-2347-7

By:

Li, Zhuo;
Fan, Huiqing;
Wang, Jinkai;
Jia, Shujing

Publication type:

Article

Fabrication, dielectric and ferroelectric properties of BaSrTiO film with preferred orientation.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 8, p. 1033, doi. 10.1007/s10854-010-0255-z

By:

Meng Wang;
Jianjun Li;
Qiang Lei;
Jun Yu;
Wenli Zhou

Publication type:

Article

On Mergers in a Stackelberg Market with Asymmetric Convex Costs.

Published in:

Journal of Industry, Competition & Trade, 2019, v. 19, n. 1, p. 21, doi. 10.1007/s10842-018-0276-5

By:

Escrihuela-Villar, Marc

Publication type:

Article

Corrosion News.

Published in:: 2015
Publication type:: Other

Zen+: a robust NUMA-aware OLTP engine optimized for non-volatile main memory.

Published in:

VLDB Journal International Journal on Very Large Data Bases, 2023, v. 32, n. 1, p. 123, doi. 10.1007/s00778-022-00737-1

By:

Liu, Gang;
Chen, Leying;
Chen, Shimin

Publication type:

Article

Joins on high-bandwidth memory: a new level in the memory hierarchy.

Published in:

VLDB Journal International Journal on Very Large Data Bases, 2020, v. 29, n. 2/3, p. 797, doi. 10.1007/s00778-019-00546-z

By:

Pohl, Constantin;
Sattler, Kai-Uwe;
Graefe, Goetz

Publication type:

Article

Efficient compute node-local replication mechanisms for NVRAM-centric data structures.

Published in:

VLDB Journal International Journal on Very Large Data Bases, 2020, v. 29, n. 2/3, p. 775, doi. 10.1007/s00778-019-00549-w

By:

Zarubin, Mikhail;
Kissinger, Thomas;
Habich, Dirk;
Willhalm, Thomas;
Lehner, Wolfgang

Publication type:

Article

Lossless image compression algorithm and hardware architecture for bandwidth reduction of external memory.

Published in:

IET Image Processing (Wiley-Blackwell), 2017, v. 11, n. 6, p. 379, doi. 10.1049/iet-ipr.2016.0636

By:

Li, Shizhong;
Yin, Haibing;
Fang, Xiangzhong;
Lu, Huijuan

Publication type:

Article

Battery life optimization techniques for ultra-low power SOCs.

Published in:

EAI Endorsed Transactions on Cloud Systems, 2019, v. 5, n. 16, p. 1, doi. 10.4108/eai.5-11-2019.162591

By:

Aladakatti, Shweta;
Singh, Shubham;
Jain, Jasdeep

Publication type:

Article

Characteristics of a Three-Transistor DRAM Circuit Utilizing a Ferroelectric Transistor.

Published in:

Integrated Ferroelectrics, 2014, v. 157, n. 1, p. 31, doi. 10.1080/10584587.2014.911620

By:

Mitchell, Cody;
McCartney, Crystal L.;
Hunt, Mitchell;
Ho, Fat D.

Publication type:

Article

Design and Testing of a 1T-1C Dynamic Random Access Memory Cell Utilizing a Ferroelectric Transistor.

Published in:

Integrated Ferroelectrics, 2014, v. 157, n. 1, p. 1, doi. 10.1080/10584587.2014.911602

By:

McCartney, Crystal Laws;
Mitchell, Cody;
Hunt, Mitchell;
Ho, Fat D.

Publication type:

Article

Transition metal dichalcogenide FET‐based dynamic random‐access memory.

Published in:

International Journal of Circuit Theory & Applications, 2025, v. 53, n. 3, p. 1764, doi. 10.1002/cta.4173

By:

Raoofi, Mahdiye;
Gholipour, Morteza

Publication type:

Article

Crosstalk cancelling voltage-mode driver for multi-Gbps parallel DRAM interface.

Published in:

International Journal of Circuit Theory & Applications, 2015, v. 43, n. 9, p. 1175, doi. 10.1002/cta.2003

By:

Kim, Younghoon;
Yoo, Changsik

Publication type:

Article

An Agent-Based Fuzzy Collaborative Intelligence Approach for Predicting the Price of a Dynamic Random Access Memory (DRAM) Product.

Published in:

Algorithms, 2012, v. 5, n. 2, p. 304, doi. 10.3390/a5020304

By:

Chen, Toly

Publication type:

Article

A Fuzzy Collaborative Forecasting Approach for Forecasting the Productivity of a Factory.

Published in:

Advances in Mechanical Engineering (Sage Publications Inc.), 2013, v. 5, p. 1, doi. 10.1155/2013/234571

By:

Yi-Chi Wang;
Toly Chen

Publication type:

Article

Twin Drain Quantum Well/Quantum Dot Channel Spatial Wave-Function Switched (SWS) FETs for Multi-Valued Logic and Compact DRAMs.

Published in:

International Journal of High Speed Electronics & Systems, 2018, v. 27, n. 3/4, p. N.PAG, doi. 10.1142/S0129156418400244

By:

Salama, Husien;
Saman, Bandar;
Heller, Evan;
Gudlavalleti, Raja Hari;
Mays, Roman;
Jain, Faquir

Publication type:

Article

ADVANCED CONCEPTS FOR FLOATING-BODY MEMORIES.

Published in:

International Journal of High Speed Electronics & Systems, 2012, v. 21, n. 1, p. -1, doi. 10.1142/S0129156412500024

By:

GÁMIZ, FRANCISCO;
RODRIGUEZ, NOEL;
CRISTOLOVEANU, SORIN

Publication type:

Article

Hotness-aware page partition management method.

Published in:

Neural Computing & Applications, 2019, v. 31, n. 1, p. 133, doi. 10.1007/s00521-018-3668-x

By:

Shang, Fengjun;
Liu, Chang;
Wang, Wenkai

Publication type:

Article

Class action dilemmas: the ethics of the Canadian DRAM settlement.

Published in:

Legal Ethics, 2015, v. 18, n. 2, p. 188, doi. 10.1080/1460728x.2015.1128229

By:

Kalajdzic, Jasminka

Publication type:

Article

A digital clock and data strobe aligner for write calibration of dynamic random access memory.

Published in:

Electronics Letters (Wiley-Blackwell), 2022, v. 58, n. 7, p. 268, doi. 10.1049/ell2.12428

By:

Chae-Young Jung;
Won-Young Lee

Publication type:

Article

Stretched tunnelling body contact structure for suppressing the FBE in a vertical cell DRAM.

Published in:

Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 23, p. 1252, doi. 10.1049/el.2019.2541

By:

Cho, Y. S.;
Choi, P. H.;
Kim, K. H.;
Park, J. M.;
Hwang, Y. S.;
Hong, H. S.;
Lee, K. P.;
Choi, B. D.

Publication type:

Article

Partial row address prefetch and auto-activate using precharge command for high density DRAM.

Published in:

Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 2, p. 76, doi. 10.1049/el.2018.7108

By:

Lee, M.-K.;
Chung, K.-S.

Publication type:

Article

Early termination refresh to reduce refresh overhead.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 3, p. 142, doi. 10.1049/el.2017.3843

By:

Lee, M.-K.;
Chung, K.-S.

Publication type:

Article

On-chip data strobe transmission with short-circuit current protection scheme for dynamic random access memory.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 1, p. 21, doi. 10.1049/el.2017.3634

By:

Won-Young Lee;
Chae-Young Jung

Publication type:

Article

Dynamic voltage frequency scaling-aware refresh management for 3D DRAM over processor architecture.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 14, p. 910, doi. 10.1049/el.2017.1243

By:

Lim, J.;
Kim, H.;
Oh, H.;
Kang, S.

Publication type:

Article

SnO2 掺杂 Ba0.6Sr0.4TiO3 陶瓷的改性机理与介电性能调控研究.

Published in:

Piezoelectrics & Acoustooptics, 2024, v. 46, n. 4, p. 511, doi. 10.11977/j.issn.1004-2474.2024.04.016

By:

张涛;
孙兰兰;
王梅;
刘佳;
李敏;
冯家乐

Publication type:

Article

Design and implementation of LCD controller with special requirement.

Published in:

Chinese Journal of Liquid Crystal & Displays, 2015, v. 30, n. 1, p. 109, doi. 10.3788/YJYXS20153001.0109

By:

LIU Liang

Publication type:

Article

Ferroelectric and Dielectric Properties of Hf0.5Zr0.5O2 Thin Film Near Morphotropic Phase Boundary.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 8, p. 1, doi. 10.1002/pssa.202000819

By:

Kashir, Alireza;
Hwang, Hyunsang

Publication type:

Article

Optimization of Small Updates for Erasure-Coded In-memory Stores.

Published in:

Computer Journal, 2019, v. 62, n. 6, p. 869, doi. 10.1093/comjnl/bxz003

By:

Huang, Jianzhong;
Xia, Jie;
Qin, Xiao;
Cao, Qiang;
Xie, Changsheng

Publication type:

Article

MOLAR: A Cost-Efficient, High-Performance SSD-Based Hybrid Storage Cache.

Published in:

Computer Journal, 2015, v. 58, n. 9, p. 2061, doi. 10.1093/comjnl/bxu156

By:

YI LIU;
XIONGZI GE;
XIAOXIA HUANG;
DU, DAVID H.C.

Publication type:

Article

100GW of commodity PV.

Published in:

Photovoltaics International, 2011, n. 14, p. 178

By:

Velosa, Alfonso

Publication type:

Article

An Innovative Architecture of DRAM PUF.

Published in:

Journal of Integrated Circuits & Systems, 2023, v. 18, n. 2, p. 1, doi. 10.29292/jics.v18i2.675

By:

Kumar, Abhishek;
Sindhwani, Manoj;
Sachdeva, Shippu

Publication type:

Article

Materials for Memristors.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202314512

By:

Lanza, Mario;
Tian, He

Publication type:

Article

Calamitic Blatter Radicals for Large‐Area Solution‐Coated Resistive Memories.

Published in:

Advanced Functional Materials, 2023, v. 33, n. 47, p. 1, doi. 10.1002/adfm.202306056

By:

Hou, Yan;
Chen, Hanjiao;
Lian, Wenru;
Li, Huaqing;
Hu, Xiaoguang;
Liu, Xuying

Publication type:

Article

Applying PSO-based BPN for predicting the yield rate of DRAM modules produced using defective ICs.

Published in:

International Journal of Advanced Manufacturing Technology, 2010, v. 49, n. 9-12, p. 987, doi. 10.1007/s00170-009-2448-2

By:

Zne-Jung Lee;
Kuo-Ching Ying;
Shih-Chieh Chen;
Shih-Wei Lin

Publication type:

Article

Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM.

Published in:

Discover Nano, 2025, v. 20, n. 1, p. 1, doi. 10.1186/s11671-025-04233-7

By:

Bae, Seung Ji;
Lee, Sang Ho;
Park, Jin;
Kim, Min Seok;
Hong, Jeong Woo;
Koh, Won Suk;
Yun, Gang San;
Jang, Jaewon;
Bae, Jin-Hyuk;
Kang, In Man

Publication type:

Article

Novel three-dimensional stacked capacitorless DRAM architecture using partially etched nanosheets for high-density memory applications.

Published in:

Discover Nano, 2025, v. 20, n. 1, p. 1, doi. 10.1186/s11671-025-04201-1

By:

Kim, Min Seok;
Lee, Sang Ho;
Park, Jin;
Bae, Seung Ji;
Hong, Jeong Woo;
Koh, Won Suk;
Yun, Gang San;
Jang, Jaewon;
Bae, Jin-Hyuk;
Kang, In Man

Publication type:

Article

AN INTEGRATED SIMULATION INFRASTRUCTURE FOR THE ENTIRE MEMORY HIERARCHY: CACHE , DRAM, NONVOLATI LE MEMORY, AND DISK.

Published in:

Intel Technology Journal, 2013, v. 17, n. 1, p. 184

By:

Stevens, Jim;
Tschirhart, Paul;
Mu-Tien Chang;
Bhati, Ishwar;
Enns, Peter;
Greensky, James;
Chisti, Zeshan;
Shih-Lien Lu;
Jacob, Bruce

Publication type:

Article

A CASE FOR NONUNIFORM FAULT TOLERANCE IN EMERGING MEMORIES.

Published in:

Intel Technology Journal, 2013, v. 17, n. 1, p. 166

By:

Qureshi, Moinuddin K.

Publication type:

Article

ERROR ANALYSIS AND RETENTION-AWARE ERROR MANAGEMENT FOR NAND FLASH MEMORY.

Published in:

Intel Technology Journal, 2013, v. 17, n. 1, p. 140

By:

Yu Cai;
Yalcin, Gulay;
Mutlu, Onur;
Haratsch, Erich F.;
Crista, Adrian;
Unsal, Osman S.;
Ken Mai

Publication type:

Article

TOWARDS PROPORTIONAL MEMORY SYSTEMS.

Published in:

Intel Technology Journal, 2013, v. 17, n. 1, p. 118

By:

Doe Hyun Yoon;
Min Kyu Jeong;
Sullivan, Michael;
Erez, Mattan

Publication type:

Article

ECC TECHNIQUES FOR ENABLING DRAM CACHES WITH OFF-CHIP TAG ARRAYS.

Published in:

Intel Technology Journal, 2013, v. 17, n. 1, p. 76

By:

Wei Wu;
Shih-Lien Lu;
Somasekhar, Dinesh;
Agarwal, Rajat

Publication type:

Article

IMPROVING MEMORY RELIABILITY, POWER AND PERFORMANCE USING MIXED-CELL DESIGNS.

Published in:

Intel Technology Journal, 2013, v. 17, n. 1, p. 36

By:

Alameldeen, Alaa R.;
Nam Sung Kim;
Khan, Samira M.;
Ghasemi, Hamid Reza;
Wilkerson, Chris;
Kulkarni, Jaydeep;
Jiménez, Daniel A.

Publication type:

Article

SCALING THE MEMORY RELIABILITY WALL.

Published in:

Intel Technology Journal, 2013, v. 17, n. 1, p. 18

By:

Wilkerson, Chris;
Alameldeen, Alaa;
Chishti, Zeshan

Publication type:

Article