Works matching DE "DYNAMIC random access memory"

Results: 268

TB-Collect: Efficient Garbage Collection for Non-Volatile Memory Online Transaction Processing Engines.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 2080, doi. 10.3390/electronics14102080

By:

Wei, Jianhao;
Zhang, Qian;
Xiang, Yiwen;
Gong, Xueqing

Publication type:

Article

Cache-Based Design of Spaceborne Solid-State Storage Systems.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 2041, doi. 10.3390/electronics14102041

By:

Liu, Chang;
An, Junshe;
Yan, Qiang;
Dong, Zhenxing

Publication type:

Article

Diffusion phase transition and aging properties induced by B-site disorder in Na-doped barium strontium titanium ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 12, p. 5581, doi. 10.1007/s10854-014-2347-7

By:

Li, Zhuo;
Fan, Huiqing;
Wang, Jinkai;
Jia, Shujing

Publication type:

Article

Fabrication, dielectric and ferroelectric properties of BaSrTiO film with preferred orientation.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 8, p. 1033, doi. 10.1007/s10854-010-0255-z

By:

Meng Wang;
Jianjun Li;
Qiang Lei;
Jun Yu;
Wenli Zhou

Publication type:

Article

The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors (Adv. Electron. Mater. 7/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202270030

By:

Seo, Haengha;
Yeu, In Won;
Kwon, Dae Seon;
Kim, Dong Gun;
Lim, Junil;
Kim, Tae Kyun;
Paik, Heewon;
Choi, Jung‐Hae;
Hwang, Cheol Seong

Publication type:

Article

The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202200099

By:

Seo, Haengha;
Yeu, In Won;
Kwon, Dae Seon;
Kim, Dong Gun;
Lim, Junil;
Kim, Tae Kyun;
Paik, Heewon;
Choi, Jung‐Hae;
Hwang, Cheol Seong

Publication type:

Article

ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101103

By:

Hodgson, Peter D.;
Lane, Dominic;
Carrington, Peter J.;
Delli, Evangelia;
Beanland, Richard;
Hayne, Manus

Publication type:

Article

Field‐Induced Ferroelectric Hf1‐xZrxO2 Thin Films for High‐k Dynamic Random Access Memory.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000631

By:

Hyun, Seung Dam;
Park, Hyeon Woo;
Park, Min Hyuk;
Lee, Young Hwan;
Lee, Yong Bin;
Kim, Beom Yong;
Kim, Ho Hyun;
Kim, Baek Su;
Hwang, Cheol Seong

Publication type:

Article

Universal Memory Characteristics and Degradation Features of ZrO2‐Based Bipolar Resistive Memory.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000368

By:

Hur, Ji‐Hyun;
Lee, Dongsoo

Publication type:

Article

One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900262

By:

Dai, Mingzhi;
Yang, Wenwei;
Li, Ming;
Zhang, Lei;
Huo, Changhe;
Dong, Yemin;
Webster, Thomas J.

Publication type:

Article

A Memory Structure with Different Control Gates.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 7, p. 1, doi. 10.1002/aelm.201800186

By:

Dai, Mingzhi;
Guan, Jianmin;
Song, Zhitang

Publication type:

Article

Molecular and Supramolecular Multiredox Systems.

Published in:

ChemistryOpen, 2020, v. 9, n. 3, p. 304, doi. 10.1002/open.201900339

By:

Shukla, Jyoti;
Singh, Vijay Pal;
Mukhopadhyay, Pritam

Publication type:

Article

Design of four-state DRAM using novel MOSFETs.

Published in:

International Journal of Electronics Letters, 2018, v. 6, n. 3, p. 249, doi. 10.1080/21681724.2017.1357194

By:

Karmakar, S.

Publication type:

Article

Scaling the Equivalent Oxide Thickness by Employing a TiO2 Thin Film on a ZrO2–Al2O3-Based Dielectric for Further Scaling of Dynamic Random Access Memory.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 10, p. 1, doi. 10.1002/pssr.201900282

By:

Soon Hyung Cha;
Cheol Hyun An;
Seong Tak Cho;
Dong-Gun Kim;
Dae Seon Kwon;
Jun Il Lim;
Woojin Jeon;
Cheol Seong Hwang

Publication type:

Article

Phase Change Materials and Superlattices for Non‐Volatile Memories.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 4, p. N.PAG, doi. 10.1002/pssr.201900130

By:

Zhang, Wei;
Wuttig, Matthias

Publication type:

Article

Electrical Properties of ZrO2/Al2O3/ZrO2‐Based Capacitors with TiN, Ru, and TiN/Ru Top Electrode Materials.

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 10, p. N.PAG, doi. 10.1002/pssr.201800356

By:

Lee, Woongkyu;
An, Cheol Hyun;
Yoo, Sijung;
Jeon, Woojin;
Chung, Min Jung;
Kim, Sang Hyeon;
Hwang, Cheol Seong

Publication type:

Article

Recent Developments in Spin Transfer Torque MRAM.

Published in:

Physica Status Solidi - Rapid Research Letters, 2017, v. 11, n. 12, p. n/a, doi. 10.1002/pssr.201700163

By:

Sbiaa, Rachid;
Piramanayagam, S. N.

Publication type:

Article

Asymmetry in electrical properties of Al-doped TiO2 film with respect to bias voltage.

Published in:

Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 7, p. 410, doi. 10.1002/pssr.201510146

By:

Jeon, Woojin;
Rha, Sang Ho;
Lee, Woongkyu;
An, Cheol Hyun;
Chung, Min Jung;
Kim, Sang Hyun;
Cho, Cheol Jin;
Kim, Seong Keun;
Hwang, Cheol Seong

Publication type:

Article

RRAMs based on anionic and cationic switching: a short overview.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 6, p. 501, doi. 10.1002/pssr.201409054

By:

Clima, Sergiu;
Sankaran, Kiroubanand;
Chen, Yang Yin;
Fantini, Andrea;
Celano, Umberto;
Belmonte, Attilio;
Zhang, Leqi;
Goux, Ludovic;
Govoreanu, Bogdan;
Degraeve, Robin;
Wouters, Dirk J.;
Jurczak, Malgorzata;
Vandervorst, Wilfried;
Gendt, Stefan De;
Pourtois, Geoffrey

Publication type:

Article

Additive advantage in characteristics of MIMCAPs on flexible silicon (100) fabric with release-first process.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 2, p. 163, doi. 10.1002/pssr.201308209

By:

Ghoneim, Mohamed T.;
Rojas, Jhonathan P.;
Hussain, Aftab M.;
Hussain, Muhammad M.

Publication type:

Article

THERMO-MECHANICAL ANALYSIS OF AN IMPROVED THERMAL THROUGH SILICON VIA (TTSV) STRUCTURE.

Published in:

Progress in Electromagnetics Research M, 2013, v. 30, p. 51, doi. 10.2528/pierm13012207

By:

Huang, Lin-Juan;
Zhao, Wen-Sheng

Publication type:

Article

Hotness-aware page partition management method.

Published in:

Neural Computing & Applications, 2019, v. 31, n. 1, p. 133, doi. 10.1007/s00521-018-3668-x

By:

Shang, Fengjun;
Liu, Chang;
Wang, Wenkai

Publication type:

Article

Stung by DRAM prices, China's SMIC reports another loss.

Published in:

ComputerWorld Hong Kong, 2008, v. 25, n. 2, p. 23

By:

Lemon, Sumner

Publication type:

Article

Chip War: The Fight for the World's Most Critical Technology.

Published in:

2023

By:

George, Alisha

Publication type:

Book Review

Persistent memory as an effective alternative to random access memory in metagenome assembly.

Published in:

BMC Bioinformatics, 2022, v. 23, n. 1, p. 1, doi. 10.1186/s12859-022-05052-8

By:

Sun, Jingchao;
Qiu, Zhining;
Egan, Rob;
Ho, Harrison;
Li, Yue;
Wang, Zhong

Publication type:

Article

Single-Electron-Resolution Noise Analysis and Application Using High-Sensitivity Charge Sensor.

Published in:

AAPPS Bulletin, 2019, v. 29, n. 3, p. 4, doi. 10.22661/AAPPSBL.2019.29.3.04

By:

KATSUHIKO NISHIGUCHI;
KENSAKU CHIDA;
AKIRA FUJIWARA

Publication type:

Article

Active memory controller.

Published in:

Journal of Supercomputing, 2012, v. 62, n. 1, p. 510, doi. 10.1007/s11227-011-0735-9

By:

Fang, Zhen;
Zhang, Lixin;
Carter, John;
McKee, Sally;
Ibrahim, Ali;
Parker, Michael;
Jiang, Xiaowei

Publication type:

Article

Editorial.

Published in:

2019

By:

Agrawal, Vishwani D.

Publication type:

Editorial

Retention-Aware Refresh Techniques for Reducing Power and Mitigation of Data Retention Faults in DRAM.

Published in:

Journal of Electronic Testing, 2019, v. 35, n. 4, p. 485, doi. 10.1007/s10836-019-05817-9

By:

Lu, Shyue-Kung;
Huang, Hung-Kai;
Hsu, Chun-Lung;
Sun, Chi-Tien;
Miyase, Kohei

Publication type:

Article

Built-In Self-Test Design for the 3D-Stacked Wide-I/O DRAM.

Published in:

Journal of Electronic Testing, 2016, v. 32, n. 2, p. 111, doi. 10.1007/s10836-016-5570-8

By:

Luo, Kun-Lun;
Wu, Ming-Hsueh;
Hsu, Chun-Lung;
Chen, Chen-An

Publication type:

Article

Competing Under Asymmetric Information: The Case of Dynamic Random Access Memory Manufacturing.

Published in:

Management Science, 2016, v. 62, n. 11, p. 3291, doi. 10.1287/mnsc.2015.2297

By:

Gardete, Pedro M.

Publication type:

Article

固态存储器短周期存取速度动态控制.

Published in:

Computer Measurement & Control, 2018, v. 26, n. 6, p. 65, doi. 10.16526/j.cnki.11-4762/tp.2018.06.017

By:

崔道江;
张小平;
李勇

Publication type:

Article

AN INTEGRATED SIMULATION INFRASTRUCTURE FOR THE ENTIRE MEMORY HIERARCHY: CACHE , DRAM, NONVOLATI LE MEMORY, AND DISK.

Published in:

Intel Technology Journal, 2013, v. 17, n. 1, p. 184

By:

Stevens, Jim;
Tschirhart, Paul;
Mu-Tien Chang;
Bhati, Ishwar;
Enns, Peter;
Greensky, James;
Chisti, Zeshan;
Shih-Lien Lu;
Jacob, Bruce

Publication type:

Article

A CASE FOR NONUNIFORM FAULT TOLERANCE IN EMERGING MEMORIES.

Published in:

Intel Technology Journal, 2013, v. 17, n. 1, p. 166

By:

Qureshi, Moinuddin K.

Publication type:

Article

ERROR ANALYSIS AND RETENTION-AWARE ERROR MANAGEMENT FOR NAND FLASH MEMORY.

Published in:

Intel Technology Journal, 2013, v. 17, n. 1, p. 140

By:

Yu Cai;
Yalcin, Gulay;
Mutlu, Onur;
Haratsch, Erich F.;
Crista, Adrian;
Unsal, Osman S.;
Ken Mai

Publication type:

Article

TOWARDS PROPORTIONAL MEMORY SYSTEMS.

Published in:

Intel Technology Journal, 2013, v. 17, n. 1, p. 118

By:

Doe Hyun Yoon;
Min Kyu Jeong;
Sullivan, Michael;
Erez, Mattan

Publication type:

Article

ECC TECHNIQUES FOR ENABLING DRAM CACHES WITH OFF-CHIP TAG ARRAYS.

Published in:

Intel Technology Journal, 2013, v. 17, n. 1, p. 76

By:

Wei Wu;
Shih-Lien Lu;
Somasekhar, Dinesh;
Agarwal, Rajat

Publication type:

Article

IMPROVING MEMORY RELIABILITY, POWER AND PERFORMANCE USING MIXED-CELL DESIGNS.

Published in:

Intel Technology Journal, 2013, v. 17, n. 1, p. 36

By:

Alameldeen, Alaa R.;
Nam Sung Kim;
Khan, Samira M.;
Ghasemi, Hamid Reza;
Wilkerson, Chris;
Kulkarni, Jaydeep;
Jiménez, Daniel A.

Publication type:

Article

SCALING THE MEMORY RELIABILITY WALL.

Published in:

Intel Technology Journal, 2013, v. 17, n. 1, p. 18

By:

Wilkerson, Chris;
Alameldeen, Alaa;
Chishti, Zeshan

Publication type:

Article

Storage Class Memory Based Hybrid Memory System for Practical Remote Sensing.

Published in:

Journal of Coastal Research, 2020, v. 102, p. 254, doi. 10.2112/SI102-031.1

By:

Koo, Sungmin;
Seo, Jungmin;
Song, Yujae;
Baek, Seungjae

Publication type:

Article

Securing Data Where It Makes Sense: In-Memory Encryption.

Published in:

International Journal of Information Security Science, 2020, v. 9, n. 2, p. 126

By:

Yalçın, Tolga

Publication type:

Article

Task‐aware swapping for efficient DNN inference on DRAM‐constrained edge systems.

Published in:

International Journal of Intelligent Systems, 2022, v. 37, n. 10, p. 8155, doi. 10.1002/int.22933

By:

Ji, Cheng;
Zhu, Zongwei;
Wang, Xianmin;
Zhai, Wenjie;
Zong, Xuemei;
Chen, Anqi;
Zhou, Mingliang

Publication type:

Article

An Improved Fuzzy Collaborative System for Predicting the Unit Cost of a DRAM Product.

Published in:

International Journal of Intelligent Systems, 2015, v. 30, n. 6, p. 707, doi. 10.1002/int.21724

By:

Chen, Toly;
Chiu, Min‐Chi

Publication type:

Article

Asia: chips are down.

Published in:: Asia Weekly, 2008, v. 2, n. 39, p. 24
Publication type:: Article

Dennard, DRAM inventor and scaling pioneer, to receive SIA's top honor.

Published in:: EE: Evaluation Engineering, 2019, v. 58, n. 8, p. 5
Publication type:: Article

Binocular rivalry produced by temporal frequency differences.

Published in:

Frontiers in Human Neuroscience, 2012, v. 6, p. 1, doi. 10.3389/fnhum.2012.00227

By:

Alais, David;
Parker, Amanda

Publication type:

Article

Bias Temperature Instability of a-IGZO TFTs Under Repeated Stress and Recovery.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 6, p. 3914, doi. 10.1007/s11664-023-10386-x

By:

Jeong, Yonghee;
Kim, Hyunjin;
Oh, Jungyeop;
Choi, Sung-Yool;
Park, Hamin

Publication type:

Article

Performance analysis of memory data layout for sub-block data access.

Published in:

Multimedia Tools & Applications, 2023, v. 82, n. 5, p. 7229, doi. 10.1007/s11042-022-13564-x

By:

Unnikrishnan, Supriya;
G, Sreelekha

Publication type:

Article

Studies of structural, dielectric and electrical characteristics of YBaCuFeO5 ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 19, p. 15704, doi. 10.1007/s10854-022-08473-6

By:

Sahoo, Rashmi Rekha;
Choudhary, R. N. P.

Publication type:

Article

Robust thermal stability in DRAM-like Sb2Te-based phase change memory by Hafnium modified.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 13, p. 10423, doi. 10.1007/s10854-022-08029-8

By:

Wang, Ruobing;
Yuan, Zhenhui;
Chen, Xin;
Song, Sannian;
Song, Zhitang

Publication type:

Article