Works matching DE "DEEP level transient spectroscopy"

Results: 151

Characterization of a metastable defect labeled EM3 in hydrogen-implanted n-type silicon using deep-level transient spectroscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 281, doi. 10.1007/s10854-007-9553-5

By:

Tokuda, Yutaka;
Takeshi Seo

Publication type:

Article

Effect of electrical operation on the defect states in organic semiconductors.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 92, doi. 10.1007/s10854-008-9693-2

By:

Nguyen, Thien;
Renaud, Cédric;
Chun Huang;
Chih-Nan Lo;
Chih-Wen Lee;
Chain-Shu Hsu

Publication type:

Article

Investigation of defects in polyhedral oligomeric silsesquioxanes based organic light emitting diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 87, doi. 10.1007/s10854-008-9629-x

By:

Renaud, Cédric;
Josse, Yves;
Chih-Wen Lee;
Nguyen, Thien-Phap

Publication type:

Article

Thermal instability of electron traps in InAs/GaAs quantum dot structures.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 101, doi. 10.1007/s10854-008-9703-4

By:

Kaniewska, M.;
Engström, O.;
Kaczmarczyk, M.;
Zaremba, G.

Publication type:

Article

Electronic characterization of several 100 μm thick epitaxial GaAs layers.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 5, p. 487, doi. 10.1007/s10854-007-9367-5

By:

Talbi, N.;
Khirouni, K.;
Sun, G. C.;
Samic, H.;
Bourgoin, J. C.

Publication type:

Article

Effect of temperature on thermally induced defects in silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 267, doi. 10.1007/s10854-007-9272-y

By:

Ali, Akbar;
Majid, Abdul;
Saleh, M. Nawaz

Publication type:

Article

Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 171, doi. 10.1007/s10854-007-9302-9

By:

Ohyama, H.;
Shitogiden, H.;
Takakura, K.;
Shigaki, K.;
Kuboyama, S.;
Kamesawa, C.;
Simoen, E.;
Claeys, C.

Publication type:

Article

A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 705, doi. 10.1007/s10854-006-9092-5

By:

Huang, Y.;
Simoen, E.;
Claeys, C.;
Rafí, J.;
Clauws, P.

Publication type:

Article

Lifetime and leakage current considerations in metal-doped germanium.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 799, doi. 10.1007/s10854-006-9110-7

By:

Simoen, E.;
Claeys, C.;
Sioncke, S.;
Steenbergen, J.;
Meuris, M.;
Forment, S.;
Vanhellemont, J.;
Clauws, P.;
Theuwis, A.

Publication type:

Article

Iron-aluminium pair reconfiguration processes in SiGe alloys.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 759, doi. 10.1007/s10854-006-9104-5

By:

Kruszewski, P.;
Mesli, A.;
Dobaczewski, L.;
Abrosimov, N.;
Markevich, V.;
Peaker, A.

Publication type:

Article

Iron and gold related defects in water quenched silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 4, p. 421, doi. 10.1007/s10854-006-9043-1

By:

Akbar Ali;
Abdul Majid;
M. Saleh

Publication type:

Article

Correlative Defect Characterization in Semiconductors via Electron Channeling Contrast Imaging and Scanning Deep Level Transient Spectroscopy.

Published in:

2019

By:

Grassman, T. J.;
Galiano, K.;
Deitz, J. I.;
Carnevale, S. D.;
Gleason, D. A.;
Zhang, Z.;
Ringel, S. A.;
Arehart, A. R.;
Pelz, J. P.

Publication type:

Abstract

Characterization of Sub-Bandgap Energy States in CuInxGa(i-x)Se2 and Transparent Conducting Oxides with Electron Energy-Loss Spectroscopy.

Published in:

Microscopy & Microanalysis, 2019, p. 456, doi. 10.1017/S1431927618002775

By:

Deitz, Julia I.;
Paul, Pran K.;
Karki, Shankar;
Marsillac, Sylvain;
Arehart, Aaron R.;
Walls, John M.;
Bowers, Jake W.;
Grassman, Tyler J.;
McComb, David W.

Publication type:

Article

Electron Emission from the Electronic States of Oxygen Precipitates in Oxygen‐Implanted Silicon.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 7, p. 1, doi. 10.1002/pssa.202100662

By:

Danilov, Denis;
Vyvenko, Oleg;
Loshachenko, Anton;
Sobolev, Nikolay

Publication type:

Article

Direct Nanoscale Characterization of Deep Levels in AgCuInGaSe2 Using Electron Energy‐Loss Spectroscopy in the Scanning Transmission Electron Microscope.

Published in:

Advanced Energy Materials, 2019, v. 9, n. 35, p. N.PAG, doi. 10.1002/aenm.201901612

By:

Deitz, Julia I.;
Paul, Pran K.;
Farshchi, Rouin;
Poplavskyy, Dmitry;
Bailey, Jeff;
Arehart, Aaron R.;
McComb, David W.;
Grassman, Tyler J.

Publication type:

Article

Study of Electron Capture by Quantum Dots Using Deep-Level Transient Spectroscopy.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1175, doi. 10.1134/1.1410660

By:

Sobolev, M. M.;
Kochnev, I. V.;
Lantratov, V. M.;
Ledentsov, N. N.

Publication type:

Article

Distinctive features of the creation of radiation-induced defects in p-Si by photon-assisted low-dose ion implantation.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 821, doi. 10.1134/1.1187789

By:

Barabanenkov, M. Yu.;
Leonov, A. V.;
Mordkovich, V. N.;
Omelyanovskaya, N. M.

Publication type:

Article

Formation of oxygen precipitates in silicon.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 852, doi. 10.1134/1.1187240

By:

Antonova, I. V.;
Popov, V. P.;
Shaımeev, S. S.;
Misiuk, A.

Publication type:

Article

Nature of Ec-0.37 eV centers and the formation of high-resistivity layers in n-type silicon.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 847, doi. 10.1134/1.1187266

By:

Naumova, O. V.;
Smirnov, L. S.;
Stas’, V. F.

Publication type:

Article

Deep level transient spectroscopy under conditions of current-carrier exchange between two allowed bands.

Published in:

Semiconductors, 1997, v. 31, n. 4, p. 371, doi. 10.1134/1.1187165

By:

Lebedev, A. A.

Publication type:

Article

Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films.

Published in:

Journal of Materials Science, 2017, v. 52, n. 17, p. 10119, doi. 10.1007/s10853-017-1217-0

By:

Paprocki, Kazimierz;
Fabisiak, Kazimierz;
Bogdanowicz, Robert;
Gołuński, Łukasz;
Staryga, Elżbieta;
Szybowicz, Mirosław;
Kowalska, Magdalena;
Banaszak-Piechowska, Agnieszka

Publication type:

Article

Annealing kinetics of gold and iron–gold complex.

Published in:

Journal of Materials Science, 2007, v. 42, n. 13, p. 4753, doi. 10.1007/s10853-006-0765-5

By:

Ali, Akbar;
Majid, Abdul

Publication type:

Article

Defect engineering for high-power 780 nm AlGaAs laser diodes.

Published in:

Journal of Materials Science, 2006, v. 41, n. 22, p. 7319, doi. 10.1007/s10853-006-0961-3

By:

Kim, D. S.;
Choi, W. C.;
Moon, G. W.;
Jang, K. Y.;
Kim, T. G.;
Sung, Y. M.

Publication type:

Article

Deep electronic states in ion-implanted Si.

Published in:

Journal of Materials Science, 2006, v. 41, n. 3, p. 1007, doi. 10.1007/s10853-006-6597-5

By:

Evans-Freeman, J. H.;
Emiroglu, D.;
Gad, M. A.;
Mitromara, N.;
Vernon-Parry, K. D.

Publication type:

Article

Properties of Z 1 and Z 2 Deep-Level Defects in n -Type Epitaxial and High-Purity Semi-Insulating 4 H -SiC.

Published in:

Crystals (2073-4352), 2024, v. 14, n. 6, p. 536, doi. 10.3390/cryst14060536

By:

Kamiński, Paweł;
Kozłowski, Roman;
Żelazko, Jarosław;
Kościewicz, Kinga;
Ciuk, Tymoteusz

Publication type:

Article

M-Center in Neutron-Irradiated 4H-SiC.

Published in:

Crystals (2073-4352), 2021, v. 11, n. 11, p. 1404, doi. 10.3390/cryst11111404

By:

Capan, Ivana;
Brodar, Tomislav;
Makino, Takahiro;
Radulovic, Vladimir;
Snoj, Luka

Publication type:

Article

Editorial for the Special Issue on "Crystalline Materials for Radiation Detection: A New Perspective".

Published in:

2021

By:

Capan, Ivana;
Coutinho, José;
Radulović, Vladimir;
Makino, Takahiro

Publication type:

Editorial

Electrical characterization of impurity-free disordering-induced defects in n-GaAs using native oxide layers.

Published in:

Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 6, p. 961, doi. 10.1007/s00339-002-1826-5

By:

Deenapanray, P.N.K.;
Tan, H.H.;
Jagadish, C.

Publication type:

Article

Investigation of p-i-n GaAs Structures by DLTS Method.

Published in:

Electronics & Electrical Engineering, 2010, n. 100, p. 51

By:

Toompuu, J.;
Korolkov, O.;
Sleptšuk, N.;
Rang, T.

Publication type:

Article

Investigation of Silicon Defects Parameters in Electron Irradiated Diodes.

Published in:

Electronics & Electrical Engineering, 2007, n. 76, p. 13

By:

Bobrovs, V.;
Porins, J.;
Ivanovs, G.

Publication type:

Article

Low-Frequency Noises and DLTS Studies in HgCdTe MWIR Photodiodes.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 10, p. 6113, doi. 10.1007/s11664-019-07213-7

By:

Guinedor, P.;
Brunner, A.;
Rubaldo, L.;
Bauza, D.;
Reimbold, G.;
Billon-Lanfrey, D.

Publication type:

Article

Effects of Iron Contamination and Hydrogen Passivation on the Electrical Properties of Oxygen Precipitates in CZ-Si.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 9, p. 5039, doi. 10.1007/s11664-018-6299-1

By:

Li, Jiyang;
Song, Lihui;
Yu, Xuegong;
Yang, Deren

Publication type:

Article

DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 2, p. 955, doi. 10.1007/s11664-017-5938-2

By:

Kumar, Arvind;
Mondal, Sandip;
Koteswara Rao, K.

Publication type:

Article

Study of Defects in GaN In Situ Doped with Eu Ion Grown by OMVPE.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2001, doi. 10.1007/s11664-016-4337-4

By:

Wang, Jingzhou;
Koizumi, Atsushi;
Fujiwara, Yasufumi;
Jadwisienczak, Wojciech

Publication type:

Article

Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 3, p. 488, doi. 10.1007/s11664-011-1802-y

By:

Gul, R.;
Keeter, K.;
Rodriguez, R.;
Bolotnikov, A.E.;
Hossain, A.;
Camarda, G.S.;
Kim, K.H.;
Yang, G.;
Cui, Y.;
Carcelen, V.;
Franc, J.;
Li, Z.;
James, R.B.

Publication type:

Article

Deep Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Studied by Current-Mode Deep-Level Transient Spectroscopy: Influence of Device Location.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 12, p. 2337, doi. 10.1007/s11664-011-1787-6

By:

Fang, Z.-Q.;
Claflin, B.;
Look, D.C.

Publication type:

Article

Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 11, p. 2179, doi. 10.1007/s11664-011-1741-7

By:

Fang, Z.-Q.;
Claflin, B.;
Look, D.;
Chai, F.;
Odekirk, B.

Publication type:

Article

Point Defects in CdZnTe Crystals Grown by Different Techniques.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 3, p. 274, doi. 10.1007/s11664-010-1504-x

By:

Gul, R.;
Bolotnikov, A.;
Kim, H.;
Rodriguez, R.;
Keeter, K.;
Li, Z.;
Gu, G.;
James, R.

Publication type:

Article

Characterization of HgCdTe Diodes on Si Substrates Using Temperature-Dependent Current-Voltage Measurements and Deep Level Transient Spectroscopy.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 832, doi. 10.1007/s11664-007-0104-x

By:

Johnstone, D.;
Golding, T. D.;
Hellmer, R.;
Dinan, J. H.;
Carmody, M.

Publication type:

Article

DLTS study of the influence of annealing on deep level defects induced in xenon ions implanted n-type 4H-SiC.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 19, p. 15679, doi. 10.1007/s10854-022-08471-8

By:

Omotoso, Ezekiel;
Meyer, Walter E.;
Igumbor, Emmanuel;
Hlatshwayo, Thulani T.;
Prinsloo, Aletta R. E.;
Auret, F. Danie;
Sheppard, Charles J.

Publication type:

Article

Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 12, p. 11079, doi. 10.1007/s10854-019-01450-6

By:

Ke, Xiao-yu;
Ming, Si-ting;
Wang, Duo-wei;
Li, Tong;
Liu, Bing-yan;
Cao, Shu-rui;
Ma, Yao;
Li, Yun;
Yang, Zhi-mei;
Gong, Min;
Huang, Ming-min;
Bi, Jin-shun;
Xu, Yan-nan;
Xi, Kai;
Xu, Gao-bo;
Majumdar, Sandip

Publication type:

Article

Study of gamma-ray radiation effects on the passivation properties of atomic layer deposited Al2O3 on silicon using deep-level transient spectroscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 2, p. 1148, doi. 10.1007/s10854-018-0383-4

By:

Chen, Zhe;
Dong, Peng;
Xie, Meng;
Li, Yun;
Yu, Xuegong;
Ma, Yao

Publication type:

Article

Effects of cobalt doping on the electrical properties of MBE-grown ZnO.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 9, p. 1400, doi. 10.1007/s10854-011-0320-2

By:

Seghier, D.;
Gislason, H. P.

Publication type:

Article

Electron Irradiation Effects and Defects Analysis of the Upright Metamorphic Four‐Junction (UMM4J) Solar Cells.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 6, p. 1, doi. 10.1002/pssa.202100704

By:

Zhang, Yanqing;
Zhou, Jiaming;
Liu, Chaoming;
Qi, Chunhua;
Wang, Tianqi;
Ma, Guoliang;
Zhou, Bin;
Xiao, Liyi;
Huo, Mingxue

Publication type:

Article

The Role of Si Self‐interstitial Atoms in the Formation of Electrically Active Defects in Reverse‐Biased Silicon n+–p Diodes upon Irradiation with Alpha Particles.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 23, p. 1, doi. 10.1002/pssa.202100104

By:

Aharodnikau, Dzmitriy A.;
Lastovskii, Stanislau B.;
Shpakovski, Sergei V.;
Markevich, Vladimir P.;
Halsall, Matthew P.;
Peaker, Anthony R.

Publication type:

Article

Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 17, p. N.PAG, doi. 10.1002/pssa.201900354

By:

Makarenko, Leonid F.;
Lastovski, Stanislav B.;
Yakushevich, Hanna S.;
Gaubas, Eugenijus;
Pavlov, Jevgenij;
Kozlovski, Vitali V.;
Moll, Michael;
Pintilie, Ioana

Publication type:

Article

Platinum–Copper Defects in Silicon.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 17, p. N.PAG, doi. 10.1002/pssa.201900311

By:

Kolkovsky, Valery;
Kolkovsky, Vladimir;
Weber, Jörg

Publication type:

Article

Detection of Sulfur‐Related Defects in Sulfur Diffused n‐ and p‐Type Si by DLTS.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 17, p. N.PAG, doi. 10.1002/pssa.201900303

By:

Gwozdz, Katarzyna;
Kolkovsky, Vladimir;
Weber, Joerg;
Yakovleva, Anastasia A.;
Astrov, Yuri A.

Publication type:

Article

Location and Properties of Carrier Traps in mc‐Si Solar Cells Subjected to Degradation at Elevated Temperatures.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 17, p. N.PAG, doi. 10.1002/pssa.201900142

By:

Mchedlidze, Teimuraz;
Weber, Joerg

Publication type:

Article

Annealing Kinetics of the Interstitial Carbon–Dioxygen Complex in Silicon.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 14, p. N.PAG, doi. 10.1002/pssa.201800986

By:

Ayedh, Hussein M.;
Grigorev, Aleksei A.;
Galeckas, Augustinas;
Svensson, Bengt G.;
Monakhov, Edouard V.

Publication type:

Article