Works matching DE "DEEP level transient spectroscopy"

Results: 151

DLTS study of the influence of annealing on deep level defects induced in xenon ions implanted n-type 4H-SiC.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 19, p. 15679, doi. 10.1007/s10854-022-08471-8

By:

Omotoso, Ezekiel;
Meyer, Walter E.;
Igumbor, Emmanuel;
Hlatshwayo, Thulani T.;
Prinsloo, Aletta R. E.;
Auret, F. Danie;
Sheppard, Charles J.

Publication type:

Article

Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 12, p. 11079, doi. 10.1007/s10854-019-01450-6

By:

Ke, Xiao-yu;
Ming, Si-ting;
Wang, Duo-wei;
Li, Tong;
Liu, Bing-yan;
Cao, Shu-rui;
Ma, Yao;
Li, Yun;
Yang, Zhi-mei;
Gong, Min;
Huang, Ming-min;
Bi, Jin-shun;
Xu, Yan-nan;
Xi, Kai;
Xu, Gao-bo;
Majumdar, Sandip

Publication type:

Article

Study of gamma-ray radiation effects on the passivation properties of atomic layer deposited Al2O3 on silicon using deep-level transient spectroscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 2, p. 1148, doi. 10.1007/s10854-018-0383-4

By:

Chen, Zhe;
Dong, Peng;
Xie, Meng;
Li, Yun;
Yu, Xuegong;
Ma, Yao

Publication type:

Article

Effects of cobalt doping on the electrical properties of MBE-grown ZnO.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 9, p. 1400, doi. 10.1007/s10854-011-0320-2

By:

Seghier, D.;
Gislason, H. P.

Publication type:

Article

Characterization of a metastable defect labeled EM3 in hydrogen-implanted n-type silicon using deep-level transient spectroscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 281, doi. 10.1007/s10854-007-9553-5

By:

Tokuda, Yutaka;
Takeshi Seo

Publication type:

Article

Effect of electrical operation on the defect states in organic semiconductors.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 92, doi. 10.1007/s10854-008-9693-2

By:

Nguyen, Thien;
Renaud, Cédric;
Chun Huang;
Chih-Nan Lo;
Chih-Wen Lee;
Chain-Shu Hsu

Publication type:

Article

Investigation of defects in polyhedral oligomeric silsesquioxanes based organic light emitting diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 87, doi. 10.1007/s10854-008-9629-x

By:

Renaud, Cédric;
Josse, Yves;
Chih-Wen Lee;
Nguyen, Thien-Phap

Publication type:

Article

Thermal instability of electron traps in InAs/GaAs quantum dot structures.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 101, doi. 10.1007/s10854-008-9703-4

By:

Kaniewska, M.;
Engström, O.;
Kaczmarczyk, M.;
Zaremba, G.

Publication type:

Article

Effect of temperature on thermally induced defects in silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 267, doi. 10.1007/s10854-007-9272-y

By:

Ali, Akbar;
Majid, Abdul;
Saleh, M. Nawaz

Publication type:

Article

Electronic characterization of several 100 μm thick epitaxial GaAs layers.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 5, p. 487, doi. 10.1007/s10854-007-9367-5

By:

Talbi, N.;
Khirouni, K.;
Sun, G. C.;
Samic, H.;
Bourgoin, J. C.

Publication type:

Article

Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 171, doi. 10.1007/s10854-007-9302-9

By:

Ohyama, H.;
Shitogiden, H.;
Takakura, K.;
Shigaki, K.;
Kuboyama, S.;
Kamesawa, C.;
Simoen, E.;
Claeys, C.

Publication type:

Article

A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 705, doi. 10.1007/s10854-006-9092-5

By:

Huang, Y.;
Simoen, E.;
Claeys, C.;
Rafí, J.;
Clauws, P.

Publication type:

Article

Lifetime and leakage current considerations in metal-doped germanium.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 799, doi. 10.1007/s10854-006-9110-7

By:

Simoen, E.;
Claeys, C.;
Sioncke, S.;
Steenbergen, J.;
Meuris, M.;
Forment, S.;
Vanhellemont, J.;
Clauws, P.;
Theuwis, A.

Publication type:

Article

Iron-aluminium pair reconfiguration processes in SiGe alloys.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 759, doi. 10.1007/s10854-006-9104-5

By:

Kruszewski, P.;
Mesli, A.;
Dobaczewski, L.;
Abrosimov, N.;
Markevich, V.;
Peaker, A.

Publication type:

Article

Iron and gold related defects in water quenched silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 4, p. 421, doi. 10.1007/s10854-006-9043-1

By:

Akbar Ali;
Abdul Majid;
M. Saleh

Publication type:

Article

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 4, p. n/a, doi. 10.1002/pssb.201600593

By:

Simoen, Eddy;
Jayachandran, Suseendran;
Delabie, Annelies;
Caymax, Matty;
Heyns, Marc

Publication type:

Article

Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 11, p. 2225, doi. 10.1002/pssb.201600364

By:

Nguyen, X. S.;
Hou, H. W.;
De Mierry, P.;
Vennéguès, P.;
Tendille, F.;
Arehart, A. R.;
Ringel, S. A.;
Fitzgerald, E. A.;
Chua, S. J.

Publication type:

Article

Annealing effects on.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 8, p. 1612, doi. 10.1002/pssb.201552744

By:

Qi, Zhen;
Sheng, Fengfeng;
Zhu, Liang;
Chen, Xiren;
Zhu, Liangqing;
Zha, Fangxing;
Yang, Jianrong;
Shao, Jun

Publication type:

Article

Deep-level transient spectroscopy at platinum/titanium-dioxide hydrogen sensors.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 4, p. 690, doi. 10.1002/pssb.201552518

By:

Schnorr, L.;
Cerchez, M.;
Ostermann, D.;
Heinzel, T.

Publication type:

Article

Electronic properties of defects in high-fluence electron-irradiated bulk GaN.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 3, p. 521, doi. 10.1002/pssb.201552521

By:

Duc, Tran Thien;
Pozina, Galia;
Son, Nguyen Tien;
Ohshima, Takeshi;
Janzén, Erik;
Hemmingsson, Carl

Publication type:

Article

DLTS characterization of proton-implanted silicon under varying annealing conditions.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2189, doi. 10.1002/pssb.201400028

By:

Laven, J. G.;
Jelinek, M.;
Job, R.;
Schustereder, W.;
Schulze, H.‐J.;
Rommel, M.;
Frey, L.

Publication type:

Article

Iron-related carrier traps near the n+p-junctions of crystalline silicon solar cells: impacts of feedstock and of the fabrication processes.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 8, p. 1608, doi. 10.1002/pssb.201451021

By:

Mchedlidze, Teimuraz;
Weber, Jörg

Publication type:

Article

Electronic properties of E3 electron trap in n-type ZnO.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 1, p. 206, doi. 10.1002/pssb.201349261

By:

Chicot, Gauthier;
Pernot, Julien;
Santailler, Jean‐Louis;
Chevalier, Céline;
Granier, Carole;
Ferret, Pierre;
Ribeaud, Alexandre;
Feuillet, Guy;
Muret, Pierre

Publication type:

Article

Introduction and annealing of primary defects in proton-bombarded n-GaN.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 1, p. 211, doi. 10.1002/pssb.201349191

By:

Schmidt, Matthias;
de Meyer, Hannes;
Johan Janse van Rensburg, Pieter;
Ernst Meyer, Walter;
Danie Auret, Francois

Publication type:

Article

Spectroscopy of Technological Defects in Si Solar Cells by Analysis of Temperature Dependent Generation Currents.

Published in:

Materials Science / Medziagotyra, 2014, v. 20, n. 3, p. 252, doi. 10.5755/j01.ms.20.3.5194

By:

PAVLOV, Jevgenij;
BAJARŪNAS, Darius;
ČEPONIS, Tomas;
GAUBAS, Eugenijus;
MEŠKAUSKAITĖ, Dovile

Publication type:

Article

Deep Level Saturation Spectroscopy.

Published in:

International Journal of Optics, 2012, p. 1, doi. 10.1155/2012/505023

By:

Gavryushin, Vladimir

Publication type:

Article

Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics.

Published in:

Nanoscale Research Letters, 2021, v. 16, n. 1, p. 1, doi. 10.1186/s11671-021-03601-3

By:

Xu, Xingliang;
Zhang, Lin;
Dong, Peng;
Li, Zhiqiang;
Li, Lianghui;
Li, Juntao;
Zhang, Jian

Publication type:

Article

Investigation of Silicon Defects Parameters in Electron Irradiated Diodes.

Published in:

Electronics & Electrical Engineering, 2007, n. 76, p. 13

By:

Bobrovs, V.;
Porins, J.;
Ivanovs, G.

Publication type:

Article

How small changes make a difference: Influence of low silver contents on the effect of RbF‐PDT in CIGS solar cells.

Published in:

Progress in Photovoltaics, 2023, v. 31, n. 12, p. 1205, doi. 10.1002/pip.3628

By:

Helder, Tim;
Kanevce, Ana;
Zinßer, Mario;
Gutzler, Rico;
Paetel, Stefan;
Hempel, Wolfram;
Magorian Friedlmeier, Theresa;
Powalla, Michael

Publication type:

Article

Statistical Properties of a Modified Accelerated Design for Phase I Cancer Clinical Trials.

Published in:

Communications in Statistics: Theory & Methods, 2007, v. 36, n. 15, p. 2741, doi. 10.1080/03610920701386810

By:

Liu, Jun;
He, Weili;
Quan, Hui

Publication type:

Article

Electron Emission from the Electronic States of Oxygen Precipitates in Oxygen‐Implanted Silicon.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 7, p. 1, doi. 10.1002/pssa.202100662

By:

Danilov, Denis;
Vyvenko, Oleg;
Loshachenko, Anton;
Sobolev, Nikolay

Publication type:

Article

Electron Irradiation Effects and Defects Analysis of the Upright Metamorphic Four‐Junction (UMM4J) Solar Cells.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 6, p. 1, doi. 10.1002/pssa.202100704

By:

Zhang, Yanqing;
Zhou, Jiaming;
Liu, Chaoming;
Qi, Chunhua;
Wang, Tianqi;
Ma, Guoliang;
Zhou, Bin;
Xiao, Liyi;
Huo, Mingxue

Publication type:

Article

The Role of Si Self‐interstitial Atoms in the Formation of Electrically Active Defects in Reverse‐Biased Silicon n+–p Diodes upon Irradiation with Alpha Particles.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 23, p. 1, doi. 10.1002/pssa.202100104

By:

Aharodnikau, Dzmitriy A.;
Lastovskii, Stanislau B.;
Shpakovski, Sergei V.;
Markevich, Vladimir P.;
Halsall, Matthew P.;
Peaker, Anthony R.

Publication type:

Article

Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 17, p. N.PAG, doi. 10.1002/pssa.201900354

By:

Makarenko, Leonid F.;
Lastovski, Stanislav B.;
Yakushevich, Hanna S.;
Gaubas, Eugenijus;
Pavlov, Jevgenij;
Kozlovski, Vitali V.;
Moll, Michael;
Pintilie, Ioana

Publication type:

Article

Platinum–Copper Defects in Silicon.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 17, p. N.PAG, doi. 10.1002/pssa.201900311

By:

Kolkovsky, Valery;
Kolkovsky, Vladimir;
Weber, Jörg

Publication type:

Article

Detection of Sulfur‐Related Defects in Sulfur Diffused n‐ and p‐Type Si by DLTS.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 17, p. N.PAG, doi. 10.1002/pssa.201900303

By:

Gwozdz, Katarzyna;
Kolkovsky, Vladimir;
Weber, Joerg;
Yakovleva, Anastasia A.;
Astrov, Yuri A.

Publication type:

Article

Location and Properties of Carrier Traps in mc‐Si Solar Cells Subjected to Degradation at Elevated Temperatures.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 17, p. N.PAG, doi. 10.1002/pssa.201900142

By:

Mchedlidze, Teimuraz;
Weber, Joerg

Publication type:

Article

Annealing Kinetics of the Interstitial Carbon–Dioxygen Complex in Silicon.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 14, p. N.PAG, doi. 10.1002/pssa.201800986

By:

Ayedh, Hussein M.;
Grigorev, Aleksei A.;
Galeckas, Augustinas;
Svensson, Bengt G.;
Monakhov, Edouard V.

Publication type:

Article

Evidence for Molybdenum‐Hydrogen Bonding in p‐Type Silicon upon Annealing under Illumination.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 10, p. N.PAG, doi. 10.1002/pssa.201800611

By:

Mullins, Jack;
Markevich, Vladimir P.;
Halsall, Matthew P.;
Peaker, Anthony R.

Publication type:

Article

COMPOSITION RELATED ELECTRICAL ACTIVE DEFECT STATES OF INGAAS AND GAASN.

Published in:

Advances in Electrical & Electronic Engineering, 2017, v. 15, n. 1, p. 114, doi. 10.15598/aeee.v15i1.2023

By:

KOSA, Arpad;
STUCHLIKOVA, Lubica;
HARMATHA, Ladislav;
KOVAC, Jaroslav;
SCIANA, Beata;
DAWIDOWSKI, Wojciech;
TLACZALA, Marek

Publication type:

Article

Defects with Deep Levels in High-Voltage Gradual p–i–n Heterojunctions AlGaAsSb/GaAs.

Published in:

Semiconductors, 2024, v. 58, n. 4, p. 354, doi. 10.1134/S1063782624040146

By:

Sobolev, M. M.;
Soldatenkov, F. Yu.

Publication type:

Article

Controlling Unintentional Defects Enables High‐Efficient Antimony Selenide Solar Cells.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 29, p. 1, doi. 10.1002/adfm.202316292

By:

Mo, Anming;
Feng, Yang;
Yang, Bingxin;
Dang, Wei;
Liang, Xiaoyang;
Cao, Wenjie;
Guo, Yingnan;
Chen, Tao;
Li, Zhiqiang

Publication type:

Article

Large‐Area (Ag,Cu)(In,Ga)Se2 Thin‐Film Solar Cells with Increased Bandgap and Reduced Voltage Losses Realized with Bulk Defect Reduction and Front‐Grading of the Absorber Bandgap.

Published in:

Solar RRL, 2022, v. 6, n. 8, p. 1, doi. 10.1002/solr.202200230

By:

Bothwell, Alexandra M.;
Li, Siming;
Farshchi, Rouin;
Miller, Michael F.;
Wands, Jake;
Perkins, Craig L.;
Rockett, Angus;
Arehart, Aaron R.;
Kuciauskas, Darius

Publication type:

Article

Electrical Characterization of GaN.

Published in:

PIERS Proceedings, 2014, p. 1975

By:

Naz, Nazir A.;
Suleman, M.;
Ali, Akbar

Publication type:

Article

Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode.

Published in:

European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110136

By:

Gassoumi, M.;
Saadaoui, S.;
Ben Salem, M.M.;
Gaquiere, C.;
Maaref, H.

Publication type:

Article

OPTICALLY INDUCED CURRENT DEEP LEVEL SPECTROSCOPY OF RADIATION DEFECTS IN NEUTRON IRRADIATED Si PAD DETECTORS.

Published in:

Lithuanian Journal of Physics, 2013, v. 53, n. 4, p. 215, doi. 10.3952/physics.v53i4.2763

By:

Gaubas, E.;
Bajarūnas, D.;
Čeponis, T.;
Meškauskaitė, D.;
Pavlov, J.

Publication type:

Article

Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes.

Published in:

Energies (19961073), 2023, v. 16, n. 2, p. 599, doi. 10.3390/en16020599

By:

Rigaud-Minet, Florian;
Raynaud, Christophe;
Buckley, Julien;
Charles, Matthew;
Pimenta-Barros, Patricia;
Gwoziecki, Romain;
Gillot, Charlotte;
Sousa, Véronique;
Morel, Hervé;
Planson, Dominique

Publication type:

Article

Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell.

Published in:

Energies (19961073), 2021, v. 14, n. 15, p. 4651, doi. 10.3390/en14154651

By:

Dawidowski, Wojciech;
Ściana, Beata;
Bielak, Katarzyna;
Mikolášek, Miroslav;
Drobný, Jakub;
Serafińczuk, Jarosław;
Lombardero, Iván;
Radziewicz, Damian;
Kijaszek, Wojciech;
Kósa, Arpád;
Florovič, Martin;
Kováč Jr., Jaroslav;
Algora, Carlos;
Stuchlíková, L'ubica

Publication type:

Article

Análisis biomecánico aplicado a la evaluación del rendimiento técnico de los árbitros y árbitros asistentes de fútbol.

Published in:

Revista Kronos, 2009, v. 8, n. 15, p. 123

By:

Mallo, J.;
Navarro, E.

Publication type:

Article

Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates.

Published in:

Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1948, doi. 10.1007/s11671-010-9820-x

By:

Shafi, M.;
Mari, R.;
Khatab, A.;
Taylor, D.;
Henini, M.

Publication type:

Article