Works matching DE "DARK currents (Electric)"

Results: 111

ELECTRICAL CHARACTERIZATIONS OF CdTe/CdS POLY-CRYSTALLINE THIN FILM SOLAR CELLS.

Published in:

Revista Cubana de Física, 2014, v. 31, n. 2, p. 66

By:

ALMORA-RODRÍGUEZ, O.;
VAILLANT, L.;
BOSIO, A.

Publication type:

Article

Thermal annealing effects on the optoelectronic characteristics of fully nanowire-based UV detector.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 7, p. 7693, doi. 10.1007/s10854-016-4755-3

By:

Li, Pengan;
Meng, Xianquan

Publication type:

Article

Investigation of dark current and differential resistance contributing mechanisms in type-II InAs/GaSb superlattice.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 5, p. 4566, doi. 10.1007/s10854-016-4332-9

By:

Peng, Ruiqin;
Jiao, Shujie;
Jiang, Dongwei;
Li, Hongtao;
Zhao, Liancheng

Publication type:

Article

Dark current mechanisms in amorphous selenium-based photoconductive detectors: an overview and re-examination.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4659, doi. 10.1007/s10854-015-2675-2

By:

Kabir, M.

Publication type:

Article

Influence of two-tier structuring on the performance of black silicon-based MSM photodetectors.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 3, p. 1542, doi. 10.1007/s10854-014-1765-x

By:

Wang, Chao;
Jiang, Jing;
Zhang, Chengui;
Jiang, Yadong;
Li, Shibin;
Wu, Zhiming

Publication type:

Article

Research on the Structure Design of Silicon Avalanche Photodiode with Near-Ultraviolet High Responsivity.

Published in:

Photonics, 2024, v. 11, n. 1, p. 1, doi. 10.3390/photonics11010001

By:

Guo, Guangtong;
Chen, Weishuai;
Zheng, Kaifeng;
Lv, Jinguang;
Qin, Yuxin;
Zhao, Baixuan;
Zhao, Yingze;
Chen, Yupeng;
Gao, Dan;
Liang, Jingqiu;
Wang, Weibiao

Publication type:

Article

43.2: Invited Paper: Light Outcoupling for OLED: Double the Efficiency While Keeping the Dark Current Low.

Published in:

2013

By:

Lecamp, Guillaume

Publication type:

Other

Equivalent circuit model of Ge/Si separate absorption charge multiplication avalanche photodiode.

Published in:

Modern Physics Letters B, 2018, v. 32, n. 8, p. 1, doi. 10.1142/S0217984917503584

By:

Wei Wang;
Ting Chen;
Linshu Yan;
Xiaoyuan Bao;
Yuanyuan Xu;
Guang Wang;
Guanyu Wang;
Jun Yuan;
Junfeng Li

Publication type:

Article

Dark current behaviour of type-II superlattice longwave infrared photodetectors under proton irradiation.

Published in:

Opto-Electronics Review, 2023, v. 31, p. 1, doi. 10.24425/opelre.2023.144552

By:

Bataillon, Clara;
Perez, Jean-Phillipe;
Alchaar, Rodolphe;
Michez, Alain;
Gilard, Olivier;
Saint-Pé, Olivier;
Christol, Philippe

Publication type:

Article

Cryogenic solutions for IR detectors - a guideline for selection.

Published in:

Opto-Electronics Review, 2023, v. 31, p. 1, doi. 10.24425/opelre.2023.144566

By:

Griot, René;
Vasse, Christophe;
Arts, Roel;
Ivanov, Ruslan;
Höglund, Linda;
Costard, Eric

Publication type:

Article

Impact of residual doping on surface current of InGaAs/InP photodiode passivated with regrown InP.

Published in:

Opto-Electronics Review, 2023, v. 31, p. 1, doi. 10.24425/opelre.2023.144562

By:

Braga, Osvaldo M.;
Delfino, Cristian A.;
Kawabata, Rudy M. S.;
Pinto, Luciana D.;
Vieira, Gustavo S.;
Pires, Mauricio P.;
Souza, Patricia L.;
Marega, Euclydes;
Carlin, John A.;
Krishna, Sanjay

Publication type:

Article

Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays.

Published in:

Opto-Electronics Review, 2023, v. 31, p. 1, doi. 10.24425/opelre.2023.144570

By:

James, Jonathan Ch.;
Haran, Terence L.;
Lane, Sarah E.

Publication type:

Article

Design and performance of dual-band MWIR/LWIR focal plane arrays based on a type-II superlattice nBn structure.

Published in:

Opto-Electronics Review, 2023, v. 31, p. 1, doi. 10.24425/opelre.2023.144560

By:

Hyun-Jin Lee;
Jun Ho Eom;
Hyun Chul Jung;
Ko-Ku Kang;
Seong Min Ryu;
Ahreum Jang;
Jong Gi Kim;
Young Ho Kim;
Han Jung;
Sun Ho Kim;
Jong Hwa Choi

Publication type:

Article

Status of multi-wafer production MBE capabilities for extended SWIR III-V epi materials for IR detection.

Published in:

Opto-Electronics Review, 2023, v. 31, p. 1, doi. 10.24425/opelre.2023.144571

By:

Fraser, Everett D.;
Jiayi Shao;
Frensley, Paul W.;
Barnes, Beau D.;
Clark, Kevin P.;
Yung-Chung Kao;
Pinsukanjana, Paul R.

Publication type:

Article

Advances in type-II superlattice research at Fraunhofer IAF.

Published in:

Opto-Electronics Review, 2023, v. 31, p. 1, doi. 10.24425/opelre.2023.144553

By:

Müller, Raphael;
Daumer, Volker;
Hugger, Tsvetelina;
Kirste, Lutz;
Luppold, Wolfgang;
Niemasz, Jasmin;
Rehm, Robert;
Stadelmann, Tim;
Wobrock, Mark;
Quankui Yang

Publication type:

Article

SRH suppression mechanism in a non-equilibrium MWIR HgCdTe photodiode.

Published in:

Opto-Electronics Review, 2023, v. 31, p. 1, doi. 10.24425/opelre.2023.144548

By:

Kopytko, Małgorzata

Publication type:

Article

The determination of the carriers recombination parameters based on the HOT HgCdTe current-voltage characteristics.

Published in:

Opto-Electronics Review, 2022, v. 30, n. 2, p. 1, doi. 10.24425/opelre.2022.141596

By:

Manyk, Tetiana;
Rutkowski, Jarosław;
Madejczyk, Paweł;
Gawron, Waldemar;
Martyniuk, Piotr

Publication type:

Article

Effects of nonuniform distribution of quantum well and quantum wire base on infrared photodetectors under dark conditions.

Published in:

Optical & Quantum Electronics, 2017, v. 49, n. 4, p. 1, doi. 10.1007/s11082-017-0992-9

By:

El_Tokhy, Mohamed;
Mahmoud, Imbaby

Publication type:

Article

The I-V zero-drift mechanism of quantum effect photodetector.

Published in:

Optical & Quantum Electronics, 2017, v. 49, n. 2, p. 1, doi. 10.1007/s11082-016-0869-3

By:

Zhang, B.;
Lu, H.;
Guo, F.

Publication type:

Article

Theoretical utmost performance of (100) mid-wave HgCdTe photodetectors.

Published in:

Optical & Quantum Electronics, 2017, v. 49, n. 1, p. 1, doi. 10.1007/s11082-016-0829-y

By:

Martyniuk, P.;
Gawron, W.;
Madejczyk, P.;
Kopytko, M.;
Grodecki, K.;
Gomułka, E.

Publication type:

Article

Charging solid microparticles in the chamber of the injector of an electrostatic accelerator.

Published in:

Instruments & Experimental Techniques, 2017, v. 60, n. 1, p. 149, doi. 10.1134/S0020441216060075

By:

Semkin, N.;
Piyakov, A.;
Vidmanov, A.;
Telegin, A.

Publication type:

Article

Development and optimization of the production technology of large-size position-sensitive detectors.

Published in:

Instruments & Experimental Techniques, 2014, v. 57, n. 5, p. 564, doi. 10.1134/S0020441214040083

By:

Muminov, R.;
Radzhapov, S.;
Toshmuradov, Yo.;
Risalieva, Sh.;
Bekbaev, S.;
Kurmantaev, A.

Publication type:

Article

Dark currents of a tandem accelerator with vacuum insulation.

Published in:

Instruments & Experimental Techniques, 2013, v. 56, n. 5, p. 497, doi. 10.1134/S002044121304012X

By:

Aleinik, V.;
Ivanov, A.;
Kuznetsov, A.;
Sorokin, I.;
Taskaev, S.

Publication type:

Article

Ionic Components of Electric Current at Rat Corneal Wounds.

Published in:

PLoS ONE, 2011, v. 6, n. 2, p. 1, doi. 10.1371/journal.pone.0017411

By:

Vieira, Ana Carolina;
Reid, Brian;
Lin Cao;
Mannis, Mark J.;
Schwab, Ivan R.;
Min Zhao

Publication type:

Article

Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1564, doi. 10.1134/S1063782618120205

By:

Samartsev, I. V.;
Nekorkin, S. M.;
Zvonkov, B. N.;
Aleshkin, V. Ya.;
Dubinov, A. A.;
Pashenkin, I. J.;
Dikareva, N. V.;
Chigineva, A. B.

Publication type:

Article

Improvement of the efficiency of silicon solar cells.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1664, doi. 10.1134/S1063782614120070

By:

Fuks, B.

Publication type:

Article

Injection photodiode based on a p-Si- n-CdS- n-CdS structure.

Published in:

Semiconductors, 2014, v. 48, n. 10, p. 1363, doi. 10.1134/S1063782614100212

By:

Mirsagatov, Sh.;
Sapayev, I.

Publication type:

Article

High-speed photodiodes for the mid-infrared spectral region 1.2-2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2-5 GHz.

Published in:

Semiconductors, 2013, v. 47, n. 8, p. 1103, doi. 10.1134/S1063782613080046

By:

Andreev, I.;
Serebrennikova, O.;
Sokolovskii, G.;
Dudelev, V.;
Ilynskaya, N.;
Konovalov, G.;
Kunitsyna, E.;
Yakovlev, Yu.

Publication type:

Article

Dark-current relaxation in MnGaSe single crystals.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 593, doi. 10.1134/S1063782613050205

By:

Tagiev, O.;
Asadullayeva, S.;
Bachtiyarly, I.;
Tagiev, K.

Publication type:

Article

Refined model for the current-voltage characteristics of quantum-well infrared photodetectors.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1158, doi. 10.1134/S106378261209014X

By:

Kulikov, V.

Publication type:

Article

Evaluation of the conversion efficiency of thin-film single-junction ( a-Si:H) and tandem (μ c-Si:H + a-Si:H) solar cells by analysis of the experimental dark and load current-voltage ( I-V) characteristics.

Published in:

Semiconductors, 2012, v. 46, n. 7, p. 929, doi. 10.1134/S1063782612070044

By:

Andreev, A.;
Andreev, V.;
Kalinovsky, V.;
Pokrovsky, P.;
Terukov, E.

Publication type:

Article

Demonstration of InAlSb MWIR Detector for High Operation Temperature Application.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 5, p. 2986, doi. 10.1007/s11664-019-07060-6

By:

Li, Mo;
Lyu, Yanqiu;
He, Yingjie;
Zhu, Xubo;
Cao, Xiancun

Publication type:

Article

Shockley-Read-Hall Lifetime Study and Implication in HgCdTe Photodiodes for IR Detection.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 10, p. 5680, doi. 10.1007/s11664-018-6557-2

By:

Gravrand, O.;
Rothman, J.;
Delacourt, B.;
Boulard, F.;
Lobre, C.;
Ballet, Ph.;
Santailler, J. L.;
Cervera, C.;
Brellier, D.;
Péré-Laperne, N.;
Destefanis, V.;
Kerlain, A.

Publication type:

Article

Type II Superlattice Infrared Detector Technology at SCD.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 10, p. 5725, doi. 10.1007/s11664-018-6527-8

By:

Klipstein, P. C.;
Avnon, E.;
Benny, Y.;
Cohen, Y.;
Fraenkel, R.;
Gliksman, S.;
Glozman, A.;
Hojman, E.;
Klin, O.;
Krasovitsky, L.;
Langof, L.;
Lukomsky, I.;
Marderfeld, I.;
Yaron, N.;
Nitzani, M.;
Rappaport, N.;
Shtrichman, I.;
Snapi, N.;
Weiss, E.

Publication type:

Article

Physics and Limitations of HgCdTe APDs: A Review.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 10, p. 5657, doi. 10.1007/s11664-018-6475-3

By:

Rothman, Johan

Publication type:

Article

Performance Simulation of Unipolar InAs/InAs<sub>1−x</sub>Sb<sub>x</sub> Type-II Superlattice Photodetector.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4653, doi. 10.1007/s11664-018-6342-2

By:

Singh, Anand;
Pal, Ravinder

Publication type:

Article

Temperature and Injection Dependence of Photoluminescence Decay in Midwave Infrared HgCdTe.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 12, p. 6817, doi. 10.1007/s11664-017-5728-x

By:

Delacourt, B.;
Ballet, P.;
Boulard, F.;
Ferron, A.;
Bonnefond, L.;
Pellerin, T.;
Kerlain, A.;
Destefanis, V.;
Rothman, J.

Publication type:

Article

Latest Developments in Long-Wavelength and Very-Long-Wavelength Infrared Detection with p-on- n HgCdTe.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3144, doi. 10.1007/s11664-015-3851-0

By:

Baier, N.;
Cervera, C.;
Gravrand, O.;
Mollard, L.;
Lobre, C.;
Destefanis, G.;
Bourgeois, G.;
Zanatta, J.P.;
Boulade, O.;
Moreau, V.

Publication type:

Article

Modulation Transfer Function Consequences of Planar Dense Array Geometries in Infrared Focal Plane Arrays.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 2981, doi. 10.1007/s11664-015-3701-0

By:

Pinkie, Benjamin;
Wichman, Adam;
Bellotti, Enrico

Publication type:

Article

Modeling of Dark Current in HgCdTe Infrared Detectors.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3303, doi. 10.1007/s11664-013-2733-6

By:

Ferron, A.;
Rothman, J.;
Gravrand, O.

Publication type:

Article

Low-Frequency Noise Characteristics of HgCdTe Infrared Photodiodes Operating at High Temperatures.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3288, doi. 10.1007/s11664-013-2728-3

By:

Hassis, W.;
Gravrand, O.;
Rothman, J.;
Benahmed, S.

Publication type:

Article

Performance of 12- μm- to 15- μm-Pitch MWIR and LWIR HgCdTe FPAs at Elevated Temperatures.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3103, doi. 10.1007/s11664-013-2658-0

By:

Strong, Roger;
Kinch, Michael;
Armstrong, John

Publication type:

Article

1/ f Noise in HgCdTe Focal-Plane Arrays.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3243, doi. 10.1007/s11664-013-2636-6

By:

Kinch, M.A.;
Strong, R.L.;
Schaake, C.A.

Publication type:

Article

Theoretical Modeling of HOT HgCdTe Barrier Detectors for the Mid-Wave Infrared Range.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3309, doi. 10.1007/s11664-013-2737-2

By:

Martyniuk, P.;
Gawron, W.;
Rogalski, A.

Publication type:

Article

Study of barrier height inhomogeneity at zinc oxide/polymer:fullerene interface in polymer solar cells.

Published in:

Polymers for Advanced Technologies, 2018, v. 29, n. 8, p. 2230, doi. 10.1002/pat.4332

By:

Agrawal, Nikhil;
Ansari, Mohd Zubair;
Khare, Neeraj;
Majumdar, Amitava

Publication type:

Article

Dark current-voltage characteristic of triple-junction solar cells: Their relation with the efficiency and the influence of passivating treatments.

Published in:

Technical Physics, 2014, v. 59, n. 6, p. 879, doi. 10.1134/S1063784214060152

By:

Lebedeva, N.;
Usikova, A.;
Evstropov, V.;
Lebedev, M.;
Ulin, V.;
Lantratov, V.;
Andreev, V.

Publication type:

Article

Design and Analysis of Quantum Dot Based Avalanche Photodiode with Intersubband Multiplication.

Published in:

Majlesi Journal of Telecommunication Devices, 2014, v. 3, n. 2, p. 77

By:

Yousefli, Amir;
Zavvari, Mahdi;
Abedi, Kambiz

Publication type:

Article

High-performance and flexible photodetectors based on P3HT/CdS/CdS:SnS superlattice nanowires hybrid films.

Published in:

Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 12, p. 1, doi. 10.1007/s00339-017-1344-0

By:

Gou, Guangyang;
Dai, Guozhang;
Wang, Xiaowu;
Chen, Yang;
Qian, Chuan;
Kong, Lingan;
Sun, Jia;
Yang, Junliang

Publication type:

Article

Analytical Model for Voltage-Dependent Photo nd Dark Currents in Bulk Heterojunction Organic Solar Cells.

Published in:

Energies (19961073), 2016, v. 9, n. 6, p. 412, doi. 10.3390/en9060412

By:

Saleheen, Mesbahus;
Arnab, Salman M.;
Kabir, M. Z.

Publication type:

Article

Prolonged electrolysis injures the neural development of zebrafish (Danio rerio).

Published in:

Environmental Science & Pollution Research, 2023, v. 30, n. 10, p. 25863, doi. 10.1007/s11356-022-23864-2

By:

Zheng, Chaoqun;
Gao, Yan;
Zhu, Jinling;
Gan, Lin;
Wang, Mengmeng;
Zhang, Wen;
Yang, Shunqing;
Yang, Liuyan

Publication type:

Article