Works matching DE "CURRENT-voltage characteristics"

Results: 1229

Effect of Mechanical Load on Atomic-Scale Fabrication Based on Local Anodic Oxidation.

Published in:

Nanomanufacturing & Metrology, 2025, v. 8, n. 1, p. 1, doi. 10.1007/s41871-025-00258-9

By:

Huang, Ning;
Zhou, Ping;
Fang, Fengzhou

Publication type:

Article

Ultraviolet Photodetector Based on Nanostructured Copper Iodide Films Deposited by Automatic SILAR Method.

Published in:

Journal of Nano- & Electronic Physics, 2025, v. 17, n. 2, p. 1, doi. 10.21272/jnep.17(2).02025

By:

Fedonenko, D.;
Petrushenko, S. I.;
Adach, K.;
Fijalkowski, M.;
Sukhov, V. M.;
Dukarov, S. V.;
Khrypunova, A. L.;
Klochko, N. P.

Publication type:

Article

Avoiding Fill Factor Losses in Cu(In,Ga)Se2 as a Bottom Cell in a Tandem Structure.

Published in:

Progress in Photovoltaics, 2025, v. 33, n. 6, p. 669, doi. 10.1002/pip.3905

By:

Kanevce, Ana;
Paetel, Stefan;
Gutzler, Rico;
Bagrowski, Dominik;
Hariskos, Dimitrios;
Friedlmeier, Theresa Magorian

Publication type:

Article

Synthesis, Impedance, and Current–Voltage Characteristics of Strontium‐Manganese Titanate Hybrid Nanoparticles.

Published in:

Macromolecular Symposia, 2020, v. 392, n. 1, p. 1, doi. 10.1002/masy.202000002

By:

Suryavanshi, Anusha;
Adimule, Vinayak;
Nandi, Santosh S.

Publication type:

Article

Base Pair Stacking Modulates Solid‐State Charge Transport in DNA Hairpins.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 20, p. 1, doi. 10.1002/chem.202203540

By:

Wang, Huili;
Zhang, Yongkang;
Zhang, Ziang;
Huang, Bing;
Li, Bingling;
Guo, Cunlan

Publication type:

Article

Organic Field-Effect Transistors: A 3D Kinetic Monte Carlo Simulation of the Current Characteristics in Micrometer-Sized Devices.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 9, p. n/a, doi. 10.1002/adfm.201605715

By:

Li, Haoyuan;
Li, Yuan;
Li, Hong;
Brédas, Jean‐Luc

Publication type:

Article

Transition metal (Ni, Pd and Pt)-embedded graphitic carbon nitride (gCN) monolayer as an acetone sensor: a computational and experimental study.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 12, p. 1, doi. 10.1007/s10854-023-10385-y

By:

Nihal;
Sharma, Rahul;
Kaur, Navjot;
Sharma, Mamta;
Choudhary, B. C.;
Goswamy, J. K.

Publication type:

Article

Achieving phase stability in ZnSe thin films by thickness and annealing recipes for optical window applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 5, p. 1, doi. 10.1007/s10854-023-09846-1

By:

Dahiya, Aarti;
Chuhadiya, S.;
Himanshu;
Suthar, D.;
Nehra, S. P.;
Dhaka, M. S.

Publication type:

Article

Influence of Eu3+ on the structural, optical and electrical properties of PEO–PVA: dual bandgap materials for optoelectronic applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 5, p. 1, doi. 10.1007/s10854-023-09841-6

By:

Saber, S.;
El-Sayed, S.;
El Sayed, Adel M.

Publication type:

Article

Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral Schottky diodes with tin oxide interface layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 3, p. 1, doi. 10.1007/s10854-022-09659-8

By:

Tuğluoğlu, Nihat;
Eymur, Serkan;
Turan, Neslihan

Publication type:

Article

Bipolar resistive switching behavior in Pt/Zn1−xMgxO/pyrographite/Pt structure for memory application.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 31, p. 24030, doi. 10.1007/s10854-022-08921-3

By:

Patel, Vikas;
Patel, Basumati;
Dhruv, Dhananjay;
Dhamecha, Vishal;
Nowicki, Andrzej

Publication type:

Article

Investigation of optical and electrical properties of graphene oxide/silicon nanowires heterojunction.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 20, p. 16501, doi. 10.1007/s10854-022-08540-y

By:

Rai, Sadhna;
Bhujel, Rabina;
Mondal, Manas Kumar;
Biswas, Joydeep;
Swain, Bibhu P.

Publication type:

Article

Laser annealing of Au/HfO2 bi-layers to fabricate Au nanoparticles without altering the phase of HfO2 for applications in SERS and memory devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 9, p. 6657, doi. 10.1007/s10854-022-07840-7

By:

Kumar, K. Vinod;
Goud, J. Pundareekam;
Kumar, Kanaka Ravi;
Raju, K. C. James;
Rao, S. V. S. Nageswara

Publication type:

Article

Current transfer processes in a hydrated layer localized in a two-layer porous structure of nanosized ZrO2.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 5, p. 2753, doi. 10.1007/s10854-021-07481-2

By:

Bacherikov, Yuriy Yu.;
Lytvyn, Petro M.;
Mamykin, Sergii V.;
Okhrimenko, Olga B.;
Ponomarenko, Valentyna V.;
Malyuta, Serhiy V.;
Doroshkevich, Aleksandr S.;
Danilenko, Igor A.;
Gorban, Oksana A.;
Gilchuk, Andrii;
Baiova, Yana;
Lyubchyk, Andriy

Publication type:

Article

The current–voltage characteristics of V2O5/n-Si Schottky diodes formed with different metals.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 15, p. 20284, doi. 10.1007/s10854-021-06534-w

By:

Kaya, Meltem Donmez;
Sertel, Buse Comert;
Sonmez, Nihan Akin;
Cakmak, Mehmet;
Ozcelik, Suleyman

Publication type:

Article

The temperature dependence of current–voltage characteristics of V2O5/p-Si heterojunction diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 14, p. 18886, doi. 10.1007/s10854-021-06406-3

By:

Deniz, Ali Rıza

Publication type:

Article

Investigation of Schottky emission and space charge limited current (SCLC) in Au/SnO2/n-Si Schottky diode with gamma-ray irradiation.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 12, p. 15857, doi. 10.1007/s10854-021-06138-4

By:

Akgül, Fatime Duygu;
Eymur, Serkan;
Akın, Ümmühan;
Yüksel, Ömer Faruk;
Karadeniz, Hande;
Tuğluoğlu, Nihat

Publication type:

Article

The effect of thermal annealing on Ti/p-Si Schottky diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 11, p. 15343, doi. 10.1007/s10854-021-06084-1

By:

Asıl Uğurlu, H.;
Çınar Demir, K.;
Coşkun, C.

Publication type:

Article

Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co–Al layered double hydroxide films.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 7, p. 8304, doi. 10.1007/s10854-021-05365-z

By:

Sun, Yanmei;
Li, Li;
Shi, Keying

Publication type:

Article

Effect of ZnS and PbS shell on mem-behavior of CdS quantum dots.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 6, p. 7049, doi. 10.1007/s10854-021-05415-6

By:

Das, Hirendra;
Xu, Qiang;
Datta, Pranayee

Publication type:

Article

Solution-based spin cast-processed O-shaped memory devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 2, p. 2258, doi. 10.1007/s10854-020-04990-4

By:

Ramana, CH. V. V.;
Jagadeesh Chandra, S. V.;
Dubey, R. S.;
Eswara Rao, B.

Publication type:

Article

Solvothermal growth of ultrathin nonporous nickel oxide nanosheets for ethanol sensing.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 1, p. 818, doi. 10.1007/s10854-020-04860-z

By:

Kumar, Vijay;
Raj, Dev;
Chakarvarti, S. K.;
Choubey, Ravi Kant;
Kumar, Sunil

Publication type:

Article

Properties of a facile growth of spray pyrolysis-based rGO films and device performance for Au/rGO/n-InP Schottky diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 1, p. 611, doi. 10.1007/s10854-020-04843-0

By:

CİMİLLİ ÇATIR, Fulya Esra

Publication type:

Article

Effect of SnO2 structure morphology on their electrical properties.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 24, p. 21934, doi. 10.1007/s10854-020-04697-6

By:

Nahirniak, S.;
Dontsova, T.;
Dusheiko, M.;
Smertenko, P.;
Kwapinski, W.

Publication type:

Article

Fabrication and characterization of Pb(Zr0.5Ti0.5)O3 nanofibers for nanogenerator applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 18, p. 15859, doi. 10.1007/s10854-020-04148-2

By:

Hayat, Khizar;
Shah, Syed Shaheen;
Ali, Shahid;
Shah, Said Karim;
Iqbal, Yaseen;
Aziz, Md. Abdul

Publication type:

Article

Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 16, p. 13487, doi. 10.1007/s10854-020-03903-9

By:

Saadi, M.;
Gonon, P.;
Vallée, C.;
Jomni, F.;
Jalaguier, E.;
Bsiesy, A.

Publication type:

Article

Thermal neutron irradiation effects on structural and electrical properties of n-type 4H‒SiC.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 11, p. 8496, doi. 10.1007/s10854-020-03385-9

By:

Vali, Indudhar Panduranga;
Shetty, Pramoda Kumara;
Mahesha, M. G.;
Rao, Mala N.;
Kesari, Swayam

Publication type:

Article

Tuning series resistance in Au/Alq3/n-Si diodes with high-energy e-Beam irradiation.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 5, p. 4287, doi. 10.1007/s10854-020-02982-y

By:

Aydemir, U.;
Durmuş, M.

Publication type:

Article

Electron bistability and switching effects in Mo/p-CdTe/Mo structure.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 5, p. 3855, doi. 10.1007/s10854-020-02926-6

By:

Khrypunov, G. S.;
Nikitin, V. O.;
Rezinkin, O. L.;
Drozdov, A. N.;
Meriuts, A. V.;
Pirohov, O. V.;
Khrypunov, M. G.;
Kirichenko, M. V.;
Danyliuk, A. R.

Publication type:

Article

Improvement of UV photodetector properties of reactively sputtered TiO2−x films through vacuum annealing.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 23, p. 20687, doi. 10.1007/s10854-019-02434-2

By:

Reddy, Y. Ashok Kumar;
Ajitha, B.;
Reddeppa, Maddaka;
Sreedhar, Adem

Publication type:

Article

Analysis of forward and reverse biased current–voltage characteristics of Al/Al2O3/n-Si Schottky diode with atomic layer deposited Al2O3 thin film interlayer.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 21, p. 19383, doi. 10.1007/s10854-019-02300-1

By:

Gullu, H. H.;
Yildiz, D. E.

Publication type:

Article

Morphological and electrical characterizations of dip coated porous TiO2 thin films with different concentrations of thiourea additives for resistive switching applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 17, p. 15928, doi. 10.1007/s10854-019-01944-3

By:

Roy, S.;
Tripathy, N.;
Sahu, P. K.;
Kar, J. P.

Publication type:

Article

Perovskite solar cells: short lifetime and hysteresis behaviour of current–voltage characteristics.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 14, p. 12851, doi. 10.1007/s10854-019-01759-2

By:

Dharmadasa, I. M.;
Rahaq, Y.;
Alam, A. E.

Publication type:

Article

High-performance nanostructured p-Cu2S/n-Si photodetector prepared by chemical bath deposition technique.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 12, p. 11807, doi. 10.1007/s10854-019-01554-z

By:

Ismail, Raid A.;
Al‑Samarai, Abdul-Majeed E.;
Muhammed, Ali M.

Publication type:

Article

Excellent dielectric performance and nonlinear electrical behaviors of Zr-doped CaCu3Ti4O12 thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 6, p. 5116, doi. 10.1007/s10854-017-8475-0

By:

Zhang, Bin;
Yue, Xianning;
Jiao, Lei;
Song, Juan;
Zhu, Yajun;
Xu, Dong;
Zhong, Sujuan;
Ma, Jia;
Bao, Li;
Zhang, Lei

Publication type:

Article

Comparative study between sensing properties of single layer (NiO) and heterojunction (NiO/p-Si) gas sensors based on nanostructured NiO films by spray pyrolysis.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 21, p. 16086, doi. 10.1007/s10854-017-7509-y

By:

Abbas, Tariq;
Kakil, Shaida;
Slewa, Lary

Publication type:

Article

Resistive switching properties of HfZrO thin films for flexible memory applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 14, p. 10625, doi. 10.1007/s10854-017-6837-2

By:

Wu, Zhipeng;
Zhu, Jun;
Liu, Xingpeng

Publication type:

Article

Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 12, p. 8844, doi. 10.1007/s10854-017-6613-3

By:

Tanrıkulu, E.;
Demirezen, S.;
Altındal, Ş.;
Uslu, İ.

Publication type:

Article

Tuning of electronic properties of edge oxidized armchair graphene nanoribbon by the variation of oxygen amounts and positions.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 12, p. 9039, doi. 10.1007/s10854-017-6636-9

By:

Maity, I.;
Ghosh, K.;
Rahaman, H.;
Bhattacharyya, P.

Publication type:

Article

Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 9, p. 6413, doi. 10.1007/s10854-016-6326-z

By:

Ersöz, Gülçin;
Yücedağ, İbrahim;
Bayrakdar, Sümeyye;
Altındal, Şemsettin;
Gümüş, Ahmet

Publication type:

Article

Nonlinear current-voltage behavior in La-doped CaCuTiO thin films derived from sol-gel method.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 9, p. 9483, doi. 10.1007/s10854-016-4997-0

By:

Xiao, Mi;
Sheng, Peng

Publication type:

Article

Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 8, p. 8340, doi. 10.1007/s10854-016-4843-4

By:

Tan, S.;
Uslu Tecimer, H.;
Çiçek, O.;
Tecimer, H.;
Orak, İ.;
Altındal, Ş.

Publication type:

Article

Influence of substrate temperature on the growth and properties of reactively sputtered In-rich InAlN films.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 5, p. 4281, doi. 10.1007/s10854-016-4294-y

By:

Afzal, Naveed;
Devarajan, Mutharasu;
Ibrahim, Kamarulazizi

Publication type:

Article

High-κ NdTaO dielectrics deposited on polycrystalline silicon substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 4, p. 3693, doi. 10.1007/s10854-015-4209-3

By:

Kao, Chyuan;
Lin, Min;
He, Yun;
Lin, Yung-Sen;
Lin, Chia;
Chen, Hsiang;
Syu, Jhih

Publication type:

Article

Unipolar resistive switching behaviour of copper doped polyvinyl alcohol/lead sulphide quantum dot device.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 4, p. 3785, doi. 10.1007/s10854-015-4223-5

By:

Sarma, S.;
Mothudi, B.;
Dhlamini, M.

Publication type:

Article

Effects of deposition temperature on structural, optical and electrical properties of TEA complexed nanocrystalline films of PbS prepared from lead acetate with reduced concentration.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 4, p. 3911, doi. 10.1007/s10854-015-4242-2

By:

Baruah, B.;
Bora, M.;
Saikia, L.;
Saikia, D.;
Phukan, P.;
Sarma, K.

Publication type:

Article

Electrical transport mechanism in CdSeZn chalcogenide thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 1, p. 77, doi. 10.1007/s10854-015-3720-x

By:

Ganaie, Mohsin;
Ahmad, Shabir;
Zulfequar, M.

Publication type:

Article

Structural, optical and electrical properties of ion beam irradiated cadmium selenate nanowires.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 12, p. 5630, doi. 10.1007/s10854-014-2352-x

By:

Rana, Pallavi;
Chauhan, R.

Publication type:

Article

Single Gaussian distribution of barrier height in Al/PS-ZnPc/p-Si type Schottky barrier diode in temperature range of 120-320 K.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 10, p. 4391, doi. 10.1007/s10854-014-2178-6

By:

Sarıyıldız, Asım;
Vural, Özkan;
Evecen, Meryem;
Altındal, Şemsettin

Publication type:

Article

Nonlinear current-voltage behavior of CaCuTiO thin films derived from sol-gel method.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 6, p. 2710, doi. 10.1007/s10854-014-1933-z

By:

Xiao, Mi;
Wang, Kaiyi;
Chenyang, Xiuqi;
Xie, Sheng

Publication type:

Article