Works matching DE "COMPUTER storage devices"

Results: 2568

The Archive of Empire: Knowledge, Conquest, and the Making of the Early Modern British World: by Asheesh Kapur Siddique, New Haven, Yale University Press, 2024, 238 pp., $45.00 (hbk), ISBN 9780300267716.

Published in:

2025

By:

Bronstein, Jamie

Publication type:

Book Review

Flat January sales follow months of rapid growth.

Published in:

Solid State Technology, 2000, v. 43, n. 5, p. 18

By:

Lunday, Christine

Publication type:

Article

What Computer Should You Buy?

Published in:

California English, 1993, v. 29, n. 5, p. 12

By:

Forman, Sid

Publication type:

Article

Reading research literature: identification and retrieval.

Published in:

Reading Research Quarterly (Wiley-Blackwell), 1968, v. 4, n. 1, p. 5, doi. 10.2307/747096

By:

Summers, Edward G.

Publication type:

Article

SHORT PAPER Development of a digital ambulatory recording system for electrodermal activity.

Published in:

Sleep & Biological Rhythms, 2004, v. 2, n. 1, p. 81, doi. 10.1111/j.1479-8425.2003.00074.x

By:

Shihara, Yasufumi;
Miyamoto, Masanori;
Kamitamari, Tokukazu;
Miyazawa, Tomio;
Sakai, Yasujiro;
Kodama, Masahisa

Publication type:

Article

Investigation of carbon void defects on hard disk surfaces.

Published in:

Surface Engineering, 2005, v. 21, n. 1, p. 41, doi. 10.1179/174329405X30066

By:

Zhong, Z. W.;
Gee, S. H.

Publication type:

Article

Scan protection to defeat card hackers.

Published in:: Electronics Systems & Software, 2005, v. 3, n. 6, p. 7
Publication type:: Article

PICO PROCESSORS.

Published in:

Computing & Control Engineering, 2003, v. 14, n. 5, p. 32, doi. 10.1049/cce:20030507

By:

Chapman, Ken

Publication type:

Article

Ternary Memory Behavior of Carbazole‐Based Donor–Acceptor Polymer and CdS NPs Composites.

Published in:

Macromolecular Chemistry & Physics, 2022, v. 223, n. 17, p. 1, doi. 10.1002/macp.202200104

By:

Dou, Feng;
Zhao, Xiaofeng;
Gao, Meng;
He, Zhaohua;
Wang, Shuao;
Liu, Hanzhou;
Wang, Shuhong;
Wang, Cheng

Publication type:

Article

Solvent‐Vapor Annealing of Amphiphile/Metal Interface for Orientated Molecular Stacking and Upgraded Resistive Memory Performance.

Published in:

Macromolecular Chemistry & Physics, 2019, v. 220, n. 22, p. N.PAG, doi. 10.1002/macp.201900334

By:

Zhang, Cheng;
Li, Hua;
Li, Zhuang;
Li, Yang;
Zhang, Qi‐jian;
Lu, Jian‐mei

Publication type:

Article

Programmable Polymer Memory Device Based on Hydrophilic Polythiophene and Poly(ionic liquid) Electrolyte.

Published in:

Macromolecular Chemistry & Physics, 2015, v. 216, n. 1, p. 113, doi. 10.1002/macp.201400432

By:

Li, Yueqin;
Song, Yang;
Zhang, Xiyu;
Wu, Xiangxiang;
Wang, Fang;
Wang, Zhuye

Publication type:

Article

Tuning Resistive Switching Memory Behavior from Non-volatile to Volatile by Phenoxy Linkages in Soluble Polyimides Containing Carbazole-Tethered Triazole Groups.

Published in:

Macromolecular Chemistry & Physics, 2014, v. 215, n. 23, p. 2374, doi. 10.1002/macp.201400441

By:

Shi, Lei;
Jia, Nanfang;
Kong, Lushi;
Qi, Shengli;
Wu, Dezhen

Publication type:

Article

Enhancing the Resistive Switching Behavior of WORM Memory Devices Using D−π−A Based Ester‐Flanked Quinolines**.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 8, p. 1, doi. 10.1002/chem.202202569

By:

Angela, Varghese M.;
Harshini, Deivendran;
Anjali, Anshika;
Imran, Predhanekar M.;
Bhuvanesh, Nattamai S. P.;
Nagarajan, Samuthira

Publication type:

Article

Macroscopic Polarization Change of Mononuclear Valence Tautomeric Cobalt Complexes Through the Use of Enantiopure Ligand.

Published in:

Chemistry - A European Journal, 2022, v. 28, n. 59, p. 1, doi. 10.1002/chem.202202161

By:

Cheng, Feng;
Wu, Shuqi;
Zheng, Wenwei;
Su, Shengqun;
Nakanishi, Takumi;
Xu, Wenhuang;
Sadhukhan, Pritam;
Sejima, Hibiki;
Ikenaga, Shimon;
Yamamoto, Kaoru;
Gao, Kaige;
Kanegawa, Shinji;
Sato, Osamu

Publication type:

Article

Preparation of Weavable, All-Carbon Fibers for Non-Volatile Memory Devices.

Published in:

Angewandte Chemie, 2013, v. 125, n. 50, p. 13593, doi. 10.1002/ange.201306770

By:

Sun, Gengzhi;
Liu, Juqing;
Zheng, Lianxi;
Huang, Wei;
Zhang, Hua

Publication type:

Article

Contents: (Adv. Funct. Mater. 43/2017).

Published in:: Advanced Functional Materials, 2017, v. 27, n. 43, p. n/a, doi. 10.1002/adfm.201770256
Publication type:: Article

Flexible Inorganic Ferroelectric Thin Films for Nonvolatile Memory Devices.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 21, p. n/a, doi. 10.1002/adfm.201700461

By:

Yu, Hyeonggeun;
Chung, Ching‐Chang;
Shewmon, Nate;
Ho, Szuheng;
Carpenter, Joshua H.;
Larrabee, Ryan;
Sun, Tianlei;
Jones, Jacob L.;
Ade, Harald;
O'Connor, Brendan T.;
So, Franky

Publication type:

Article

Textile Resistance Switching Memory for Fabric Electronics.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 15, p. n/a, doi. 10.1002/adfm.201605593

By:

Jo, Anjae;
Seo, Youngdae;
Ko, Museok;
Kim, Chaewon;
Kim, Heejoo;
Nam, Seungjin;
Choi, Hyunjoo;
Hwang, Cheol Seong;
Lee, Mi Jung

Publication type:

Article

Wearable Electronics: Textile Resistance Switching Memory for Fabric Electronics (Adv. Funct. Mater. 15/2017).

Published in:

Advanced Functional Materials, 2017, v. 27, n. 15, p. n/a, doi. 10.1002/adfm.201770094

By:

Jo, Anjae;
Seo, Youngdae;
Ko, Museok;
Kim, Chaewon;
Kim, Heejoo;
Nam, Seungjin;
Choi, Hyunjoo;
Hwang, Cheol Seong;
Lee, Mi Jung

Publication type:

Article

Memory Devices: One-Step All-Solution-Based Au-GO Core-Shell Nanosphere Active Layers in Nonvolatile ReRAM Devices (Adv. Funct. Mater. 10/2017).

Published in:

Advanced Functional Materials, 2017, v. 27, n. 10, p. n/a, doi. 10.1002/adfm.201770063

By:

Rani, Adila;
Velusamy, Dhinesh Babu;
Marques Mota, Filipe;
Jang, Yoon Hee;
Kim, Richard Hahnkee;
Park, Cheolmin;
Kim, Dong Ha

Publication type:

Article

Rational Design of Small Molecules to Implement Organic Quaternary Memory Devices.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 1, p. 146, doi. 10.1002/adfm.201503493

By:

Zhang, Qijian;
He, Jinghui;
Zhuang, Hao;
Li, Hua;
Li, Najun;
Xu, Qingfeng;
Chen, Dongyun;
Lu, Jianmei

Publication type:

Article

Controlling Crystallite Orientation of Diketopyrrolopyrrole-Based Small Molecules in Thin Films for Highly Reproducible Multilevel Memory Device: Role of Furan Substitution.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 27, p. 4246, doi. 10.1002/adfm.201501271

By:

Li, Yang;
Li, Hua;
Chen, Hongfei;
Wan, Yu;
Li, Najun;
Xu, Qingfeng;
He, Jinghui;
Chen, Dongyun;
Wang, Lihua;
Lu, Jianmei

Publication type:

Article

Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 25, p. 3825, doi. 10.1002/adfm.201501389

By:

Wang, Hong;
Du, Yuanmin;
Li, Yingtao;
Zhu, Bowen;
Leow, Wan Ru;
Li, Yuangang;
Pan, Jisheng;
Wu, Tao;
Chen, Xiaodong

Publication type:

Article

Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 15, p. 2171, doi. 10.1002/adfm.201303274

By:

Shang, Jie;
Liu, Gang;
Yang, Huali;
Zhu, Xiaojian;
Chen, Xinxin;
Tan, Hongwei;
Hu, Benlin;
Pan, Liang;
Xue, Wuhong;
Li, Run‐Wei

Publication type:

Article

Flexible Nonvolatile Transistor Memory Devices Based on One-Dimensional Electrospun P3HT:Au Hybrid Nanofibers.

Published in:

Advanced Functional Materials, 2014, v. 23, n. 39, p. 4960, doi. 10.1002/adfm.201300283

By:

Chang, Hsuan‐Chun;
Liu, Cheng‐Liang;
Chen, Wen‐Chang

Publication type:

Article

Cation-Anion Interaction-Directed Molecular Design Strategy for Mechanochromic Luminescence.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 6, p. 747, doi. 10.1002/adfm.201302086

By:

Li, Gaocan;
Song, Feijie;
Wu, Di;
Lan, Jingbo;
Liu, Xingyan;
Wu, Jie;
Yang, Shuaijun;
Xiao, Dan;
You, Jingsong

Publication type:

Article

Contact size-dependent switching instabilities in HfO2 RRAM.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 28, p. 22230, doi. 10.1007/s10854-022-09002-1

By:

Baikov, Pavel;
Ranganathan, Kamalakannan;
Goldfarb, Ilan;
Ruzin, Arie

Publication type:

Article

Room temperature magento-electric coupling in Pb–Zn substituted Co2Y-hexaferrite.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 21, p. 16874, doi. 10.1007/s10854-022-08561-7

By:

Deepika;
Paras, Neha;
Arya, Anil;
Kumar, Rajesh;
Sharma, Shashi;
Lal, Sohan;
Kumar, V.;
Gaur, Anurag

Publication type:

Article

Resistive organic memory devices based on nitrogen-doped CNTs/PSS composites.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 18, p. 14910, doi. 10.1007/s10854-022-08408-1

By:

Sánchez-Vásquez, J. D.;
Portillo-Rodríguez, B.;
Tovar-Martínez, E.;
Reyes-Reyes, M.;
López-Sandoval, R.

Publication type:

Article

The novel behavior of real and imaginary part of impedance, modulus, and AC conductivity of Au/PPy–MWCNTs/TiO2/Al2O3/n-Si/Al.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 14, p. 11194, doi. 10.1007/s10854-022-08095-y

By:

Ashery, Adel;
Gaballah, A. E. H.

Publication type:

Article

Laser annealing of Au/HfO2 bi-layers to fabricate Au nanoparticles without altering the phase of HfO2 for applications in SERS and memory devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 9, p. 6657, doi. 10.1007/s10854-022-07840-7

By:

Kumar, K. Vinod;
Goud, J. Pundareekam;
Kumar, Kanaka Ravi;
Raju, K. C. James;
Rao, S. V. S. Nageswara

Publication type:

Article

Hot-pressed (1-x)[0.9(0.3CoFe2O4-0.7BiFeO3)-0.1Pb(Zr0.52,Ti0.48)O3]-x poly(vinylidene difluoride) multiferroic composites with magnetically driven polarization.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 8, p. 4806, doi. 10.1007/s10854-021-07670-z

By:

Sufyan, Muhammad;
Lu, Zhenya;
Chen, Zhiwu;
Wang, Xin;
Gao, Junning;
Atiq, Shahid

Publication type:

Article

A review of interconnect materials used in emerging memory device packaging: first- and second-level interconnect materials.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 23, p. 27133, doi. 10.1007/s10854-021-07105-9

By:

Zou, Yong Sheng;
Gan, Chong Leong;
Chung, Min-Hua;
Takiar, Hem

Publication type:

Article

On the magnetic and magnetoelectric coupling properties of lead-free (1 − x) Bi0.9La0.1FeO3/xLa0.7Sr0.3MnO3 (x = 0, 0.1, 0.2) composites at room temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 22, p. 27073, doi. 10.1007/s10854-021-07078-9

By:

Devi, M. Manjula;
Anand, Anitha;
Veena, R. K.;
Veena, V. S.;
Nandakumar, K.;
Sagar, S.

Publication type:

Article

A high-k composite of TiO2–ZrO2 for charge trapping memory device with a large memory window under a low voltage.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 19, p. 24429, doi. 10.1007/s10854-021-06918-y

By:

Zhu, Jun;
Li, Kang;
Zhang, Yu

Publication type:

Article

Dielectric relaxation in amorphous and crystalline Sb2Te3 thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 10, p. 14072, doi. 10.1007/s10854-021-05986-4

By:

Kononov, A. A.;
Castro, R. A.;
Saito, Y.;
Fons, P.;
Bordovsky, G. A.;
Anisimova, N. I.;
Kolobov, A. V.

Publication type:

Article

Research on the ability of over current in Ti/NbOx/Pt-based selector.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 10, p. 12822, doi. 10.1007/s10854-020-03670-7

By:

Liu, Chunlei;
Ma, Guokun;
Chen, Ao;
Zhao, Xiaohu;
Zhou, Chujie;
Wang, Hao

Publication type:

Article

Forming-free and multilevel resistive switching properties of hydrothermally synthesized hexagonal molybdenum oxide microrods.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 9, p. 12490, doi. 10.1007/s10854-021-05883-w

By:

Patil, Swapnil R.;
Mullani, Navaj B.;
Kamble, Bhagyashri B.;
Tayade, Shivaji N.;
Kamat, Rajanish K.;
Park, Tae Joo;
Kim, Deok-kee;
Dongale, Tukaram D.

Publication type:

Article

Enhanced room temperature multiferroic behaviour of Ni-doped Na0.5Bi0.5TiO3 ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 8, p. 10255, doi. 10.1007/s10854-021-05681-4

By:

Goel, Rahul;
Syal, Rajat;
Sharma, Nandini;
Dhiman, Shobhna;
Singh, Arun Kumar;
Garg, Ashish;
Kumar, Sanjeev

Publication type:

Article

Effect of Mg35Sb65 interlayer on the thermal stability and scaling of Ge2Sb2Te5 phase change thin film.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 5, p. 6408, doi. 10.1007/s10854-021-05358-y

By:

Sun, Song;
Hu, Yifeng;
Lai, Tianshu;
Zhu, Xiaoqin

Publication type:

Article

Charge trapping characteristics of sputter-AlOx/ALD Al2O3/Epitaxial-GaAs-based non-volatile memory.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 4, p. 4157, doi. 10.1007/s10854-020-05157-x

By:

Mahata, Chandreswar;
Ghosh, Siddhartha;
Chakraborty, Sandipan;
Patro, Laxmi Narayana;
Tripathi, Anjana;
Thapa, Ranjit;
Ramakrishna, Seeram;
Kim, Sungjun;
Dalapati, Goutam Kumar

Publication type:

Article

Effects of swift heavy ion irradiation on the performance of HfO2-based resistive random access memory devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 3, p. 2973, doi. 10.1007/s10854-020-05049-0

By:

Arun, N.;
Sangani, L. D. Varma;
Vinod Kumar, K.;
Mangababu, A.;
Krishna, M. Ghanashyam;
Pathak, A. P.;
Nageswara Rao, S. V. S.

Publication type:

Article

Solution-based spin cast-processed O-shaped memory devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 2, p. 2258, doi. 10.1007/s10854-020-04990-4

By:

Ramana, CH. V. V.;
Jagadeesh Chandra, S. V.;
Dubey, R. S.;
Eswara Rao, B.

Publication type:

Article

YBCO-based non-volatile ReRAM tested in Low Earth Orbit.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 19, p. 16389, doi. 10.1007/s10854-020-04190-0

By:

Acha, C.;
Barella, M.;
Sanca, G. A.;
Gomez Marlasca, F.;
Huhtinen, H.;
Paturi, P.;
Levy, P.;
Golmar, F.

Publication type:

Article

Gold nanoparticles functionalized with 4,4'-dithiobiphenyl blended with CuS in PMMA for switching memory devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 15, p. 12083, doi. 10.1007/s10854-020-03753-5

By:

Cerra, Sara;
Pica, Paride;
Congiu, Mirko;
Boratto, M. H.;
Graeff, C. F.O.;
Fratoddi, Ilaria

Publication type:

Article

Photo-induced resistive switching in CdS-sensitized TiO2 nanorod array memristive device.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 13, p. 10919, doi. 10.1007/s10854-020-03643-w

By:

Bhat, Tejasvinee S.;
Revadekar, Chetan C.;
Patil, Satyajeet S.;
Dongale, Tukaram D.;
Kim, Deok-kee;
Patil, Pramod S.

Publication type:

Article

Structure, electrical transport, and magnetoresistance of manganite films on sapphire.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 13, p. 10702, doi. 10.1007/s10854-020-03619-w

By:

Zhang, H.;
Wang, H. O.;
Su, K. P.;
Huang, S.;
Ge, J. Y.;
Huo, D. X.

Publication type:

Article

Bipolar-resistive switching and memristive properties of solution-processable cobalt oxide nanoparticles.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 12, p. 9695, doi. 10.1007/s10854-020-03515-3

By:

Patil, Akshay A.;
Khot, Sagar S.;
Amate, Rutuja U.;
Kamble, Pravin N.;
Patil, Prashant B.;
Bulakhe, Ravindra N.;
In, Insik;
Dongale, Tukaram D.;
Kim, Deok-kee

Publication type:

Article

Rewritable bistable memory device in polymethyl methacrylate carbon nanotube composite films.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 4, p. 3642, doi. 10.1007/s10854-020-02921-x

By:

Zhao, Enming;
Liu, Xiaodan;
Liu, Guangyu;
Zhou, Bao;
Xing, Chuanxi

Publication type:

Article

Improved room-temperature multiferroicity in Co-doped Aurivillius Sr0.5Bi5.5Fe1.5Ti3.5O18 ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 2, p. 1034, doi. 10.1007/s10854-019-02614-0

By:

Lu, Yuxi;
Sun, Hui;
Wang, Zhifeng;
Xie, Xi;
Yao, Tiaoshu;
Wang, Jianlin;
Qi, Yajun;
Chen, Xiaobing;
Lu, Yalin

Publication type:

Article