Works matching DE "COMPOUND semiconductors"

Results: 275

Comprehensive Study of BaAlO3 Using FP-LMTO and PBE-GGA: Structural, Electronic, and Optical Properties.

Published in:

Semiconductors, 2025, v. 59, n. 5, p. 495, doi. 10.1134/S1063782625600329

By:

Kumar, Sandeep;
Tiwari, Subhash Chandra;
Gupta, Anubha;
Verma, Ankur;
Kumar, Aman

Publication type:

Article

Open Sn Framework Structure Hosting Bi Guest atoms–Synthesis, Crystal and Electronic Structure of Na13Sn26Bi.

Published in:

Chemistry - A European Journal, 2025, v. 31, n. 5, p. 1, doi. 10.1002/chem.202403592

By:

Zeitz, S.;
Boyko, M.;
Ponou, S.;
Hlukhyy, V.;
Fässler, T. F.

Publication type:

Article

Optical investigations of Cu2BaSnS4 quaternary nanostructure absorbers deposited by dip-coating technique.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 32, p. 24477, doi. 10.1007/s10854-022-09160-2

By:

Ziti, Ahmed;
Hartiti, Bouchaib;
Smairi, Salma;
Labrim, Hicham;
Nouri, Youssef;
Nkuissi, Hervé Joël Tchognia;
Belafhaili, Amine;
Fadili, Salah;
Tahri, Mounia;
Thevenin, Philippe

Publication type:

Article

Improving the physical properties of polycrystalline-deficient Pr0.8Sr0.2−x□xMnO3 (0 ≤ x ≤ 0.2) compounds for electronic devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 23, p. 18632, doi. 10.1007/s10854-022-08714-8

By:

Kharrat, A. Ben Jazia;
Khirouni, K.;
Boujelben, W.

Publication type:

Article

Third order optical nonlinearities in CdS nanostructured thin films: a comprehensive review.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 19, p. 24176, doi. 10.1007/s10854-021-06885-4

By:

Khan, Z. R.;
Shkir, Mohd

Publication type:

Article

Recovery process for trimethyl-indium (TMIn) precursor used in compound semiconductors such as InGaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 21, p. 19444, doi. 10.1007/s10854-019-02307-8

By:

Yang, Jaeyeol;
Lim, Jaewon;
Yoon, Jaesik

Publication type:

Article

Cu-In intermetallic compound inks for CuInS solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 8, p. 1124, doi. 10.1007/s10854-010-0271-z

By:

Chen, Guanbi;
Lei Wang;
Sheng, Xia;
Deren Yang

Publication type:

Article

Electrical, structural and morphological characteristics of rapidly annealed Pd/n-InP (100) Schottky structure.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 7, p. 854, doi. 10.1007/s10854-010-0225-5

By:

Ashok Kumar, A.;
Janardhanam, V.;
Rajagopal Reddy, V.

Publication type:

Article

Electrical and optical properties of P-doped ZnO thin films by annealing temperatures in Nitrogen ambient.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 3, p. 248, doi. 10.1007/s10854-010-0123-x

By:

Seong Kang;
Yang Joung;
Jung Han;
Yung Yoon

Publication type:

Article

The recent advances of research on p-type ZnO thin film.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 727, doi. 10.1007/s10854-007-9398-y

By:

Dai, L. P.;
Deng, H.;
Mao, F. Y.;
Zang, J. D.

Publication type:

Article

PV chart management innovation based on production balance ratio: a case study of Company S's GaAs process improvement for compound semiconductors.

Published in:

International Journal of Advanced Manufacturing Technology, 2025, v. 136, n. 5, p. 2769, doi. 10.1007/s00170-024-14963-0

By:

Tang, Shih-Ming;
Pei, Wen;
Chuang, Ming-Hsi

Publication type:

Article

Exploring fundamental properties of Mg0.915A0.085H2 (A = Ti, Fe) for potential hydrogen storage application: First‐principles study.

Published in:

International Journal of Energy Research, 2021, v. 45, n. 10, p. 14971, doi. 10.1002/er.6770

By:

Irfan, Muhammad;
Azam, Sikander;
Vu, Tuan V.;
Goumri‐Said, Souraya

Publication type:

Article

Structural, electronic and optoelectronic properties of AB5C8 (A = Cu/Ag; B = In and C = S, Se and Te) compounds.

Published in:

International Journal of Energy Research, 2021, v. 45, n. 3, p. 4014, doi. 10.1002/er.6057

By:

Begum, Yasmeen;
Khan, Shamim;
Reshak, Ali H.;
Laref, Amel;
Amir, Zoobia;
Murtaza, Ghulam;
Bila, Jiri;
Johan, Mohd R.;
Al‐Noor, Taghreed H.

Publication type:

Article

Simulation studies on photovoltaic response of ultrathin CuSb(S/Se)2 ternary compound semiconductors absorber‐based single junction solar cells.

Published in:

International Journal of Energy Research, 2020, v. 44, n. 5, p. 3724, doi. 10.1002/er.5158

By:

Gupta, Goutam Kumar;
Dixit, Ambesh

Publication type:

Article

State-of-the-Art Materials Used in MEMS Micromirror Arrays for Photonic Applications.

Published in:

Photonics, 2024, v. 11, n. 3, p. 253, doi. 10.3390/photonics11030253

By:

Liu, Shujie;
Kästner, Philipp;
Donatiello, Roland;
Shrivastava, Anup;
Smolarczyk, Marek;
Iskhandar, Mustaqim Siddi Que;
Hasan, Md Kamrul;
Caruso, Giuseppe;
Chen, Jiahao;
Elsaka, Basma;
Baby, Shilby;
Löber, Dennis;
Kusserow, Thomas;
Adam, Jost;
Hillmer, Hartmut

Publication type:

Article

Performance and applications of ZnO/pyrolusite composite particle electrode.

Published in:

Environmental Technology, 2024, v. 45, n. 23, p. 4914, doi. 10.1080/09593330.2023.2283408

By:

Yang, Youli;
Liang, Hong;
Li, Lingli;
Zheng, Qiang;
He, Ran

Publication type:

Article

Material conversion of GaAs nanowires.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 2, p. n/a, doi. 10.1002/pssb.201600522

By:

Nishioka, Kohei;
Suzuki, Hidetoshi;
Sakai, Kentaro;
Ishikawa, Fumitaro

Publication type:

Article

Contents.

Published in:: Physica Status Solidi (B), 2017, v. 254, n. 2, p. n/a, doi. 10.1002/pssb.201770211
Publication type:: Article

Structural characterization of the high-temperature modification of the Cu2ZnGeTe4 quaternary semiconductor compound.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 6, p. 1195, doi. 10.1002/pssb.201552782

By:

Nieves, L.;
Delgado, G. E.;
Marcano, G.;
Power, Ch.;
López‐Rivera, S. A.;
Rincón, C.

Publication type:

Article

Review of solution growth techniques for 4H-SiC single crystal.

Published in:

China Foundry, 2023, v. 20, n. 2, p. 159, doi. 10.1007/s41230-023-2103-9

By:

Gang-qiang Liang;
Hao Qian;
Yi-lin Su;
Lin Shi;
Qiang Li;
Yuan Liu

Publication type:

Article

Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-40157-5

By:

Benter, Sandra;
Jönsson, Adam;
Johansson, Jonas;
Zhu, Lin;
Golias, Evangelos;
Wernersson, Lars-Erik;
Mikkelsen, Anders

Publication type:

Article

First-principles study of the ground state stability of III-V bismuth compounds.

Published in:

Philosophical Magazine Letters, 2009, v. 89, n. 12, p. 807, doi. 10.1080/09500830903304125

By:

Zaoui, A.;
Madouri, D.;
Ferhat, M.

Publication type:

Article

Optimizing TCAD Model and Temperature-Dependent Analysis of Pt/AlN Schottky Barrier Diodes for High-Power and High-Temperature Applications.

Published in:

International Journal of High Speed Electronics & Systems, 2024, v. 33, n. 2/3, p. 1, doi. 10.1142/S0129156424400652

By:

Hossain, Md Maruf;
Singha, Showmik;
Titirsha, Twisha;
Eliza, Sazia A.;
Islam, Syed Kamrul

Publication type:

Article

RELIABILITY AND RADIATION HARDNESS OF COMPOUND SEMICONDUCTORS.

Published in:

International Journal of High Speed Electronics & Systems, 2003, v. 13, n. 1, p. 327, doi. 10.1142/S0129156403001636

By:

Kayali, Sammy A.;
Johnston, Allan H.

Publication type:

Article

PRESENT AND FUTURE OF HIGH-SPEED COMPOUND SEMICONDUCTOR IC's.

Published in:

International Journal of High Speed Electronics & Systems, 2003, v. 13, n. 1, p. 1, doi. 10.1142/S0129156403001508

By:

Otsuji, Taiichi

Publication type:

Article

Electron Drift Velocity of the Two-Dimensional Electron Gas in Compound Semiconductors.

Published in:

International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 103, doi. 10.1142/S0129156400000131

By:

Dmitriev, Alexander;
Kachorovski, Valentin;
S. Shur, Michael;
Stroscio, Michael

Publication type:

Article

Simulation and experimental study of InN nanoparticles synthesized by ion implantation technology.

Published in:

Journal of Molecular Modeling, 2024, v. 30, n. 7, p. 1, doi. 10.1007/s00894-024-06036-6

By:

Radouane, Graine;
Rafik, Chemam

Publication type:

Article

Electronic, non-linear optical, optoelectronic, and thermodynamic properties of undoped and doped bis (ethylenedithio) tetraselenafulvalene (BETS) (C10H8S4Se4) molecule: first study using ab initio investigation

Published in:

Journal of Molecular Modeling, 2022, v. 28, n. 9, p. 1, doi. 10.1007/s00894-022-05250-4

By:

Ntieche, Zounedou;
Abe, Martin Thierry Ottou;
freidy, Olinga Mbala Gaspard;
Ejuh, Geh Wilson;
Ndjaka, Jean Marie Bienvenu

Publication type:

Article

Microwave performance and reliability evaluation of MOCVD-grown AlInAs/GaInAs/InP-based HEMTs.

Published in:

Microwave & Optical Technology Letters, 1999, v. 20, n. 6, p. 357, doi. 10.1002/(SICI)1098-2760(19990320)20:6<357::AID-MOP2>3.0.CO;2-H

By:

Nawaz, M.;
Strupinski, W.;
Stenarson, J.;
Persson, S. H. M.;
Zirath, H.

Publication type:

Article

HARMONIC GENERATION IN II--VI COMPOUND SEMICONDUCTORS UNDER HOT ELECTRON CONDITION.

Published in:

Microwave & Optical Technology Letters, 1990, v. 3, n. 11, p. 386, doi. 10.1002/mop.4650031105

By:

Dutta, A.;
Mukhopadhyay, D.

Publication type:

Article

A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications.

Published in:

Crystal Research & Technology, 2024, v. 59, n. 7, p. 1, doi. 10.1002/crat.202300347

By:

Ghosh, Kaustab;
Mani, V. N.

Publication type:

Article

Biaxial and Uniaxial Tensile Strains Effects on Electronic, Optical, and Thermoelectric Properties of ScBiTe3 Compound.

Published in:

Crystal Research & Technology, 2023, v. 58, n. 11, p. 1, doi. 10.1002/crat.202300069

By:

Benyoussef, Safae;
Jabar, Abderrahim;
Bahmad, Lahoucine

Publication type:

Article

Influence of Si Doping on Dislocations and Mechanical Properties of GaAs Crystals Grown by Modified Vertical Bridgman Method.

Published in:

Crystal Research & Technology, 2022, v. 57, n. 7, p. 1, doi. 10.1002/crat.202100247

By:

Zhang, Hongli;
Jin, Min;
Shen, Hui;
Xu, Jiayue

Publication type:

Article

MOVPE of Group‐III Heterostructures for Optoelectronic Applications.

Published in:

Crystal Research & Technology, 2020, v. 55, n. 2, p. N.PAG, doi. 10.1002/crat.201900027

By:

Scholz, Ferdinand

Publication type:

Article

The Study of ZnO-NRs and Ge-chips Bandgaps for the Elimination of Elemental Semiconductors and Compound Semiconductors Applications.

Published in:

International Journal of Biological, Physical & Chemical Studies, 2023, v. 5, n. 1, p. 18, doi. 10.32996/ijbpcs.2023.5.1.3

By:

Hewadmal, Mohammad Mohsen;
Mahboob, Mujibullah;
Mosamem, Sayed Abdul Saboor

Publication type:

Article

Effect of Doping with Praseodymium on the Crystal Structure and Optical Absorption Edge of the TlGaS2 Compound.

Published in:

Inorganic Materials, 2024, v. 60, n. 11, p. 1293, doi. 10.1134/S0020168525700128

By:

Ismailova, P. G.;
Gasanov, N. Z.;
Gajieva, A. A.;
Guseinova, K. M.

Publication type:

Article

Physics-informed Bayesian optimization suitable for extrapolation of materials growth.

Published in:

NPJ Computational Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1038/s41524-025-01522-8

By:

Kobayashi, Wataru;
Otsuka, Takuma;
Wakabayashi, Yuki K.;
Tei, Gensai

Publication type:

Article

Anomalous hall effect in Mn δ-doped GaAs/In0.17Ga0.83As/GaAs quantum wells with high hole mobility.

Published in:

JETP Letters, 2007, v. 85, n. 1, p. 27, doi. 10.1134/S0021364007010067

By:

Aronzon, B. A.;
Kul'bachinskiĭ, V. A.;
Gurin, P. V.;
Davydov, A. B.;
Ryl'kov, V. V.;
Granovskiĭ, A. B.;
Vikhrova, O. V.;
Danilov, Yu. A.;
Zvonkov, B. N.;
Horikoshi, Y.;
Onomitsu, K.

Publication type:

Article

Spin dynamics in the regime of hopping conductivity.

Published in:

JETP Letters, 2007, v. 85, n. 1, p. 55, doi. 10.1134/S0021364007010110

By:

Lyubinskiy, I. S.;
Dmitriev, A. P.;
Kachorovskii, V. Yu.

Publication type:

Article

Energy bandgap variation in semiconductor compound nanomaterials.

Published in:

High Temperatures - High Pressures, 2021, v. 50, n. 1, p. 17, doi. 10.32908/hthp.v50.861

By:

CHATURVEDI, POOJA;
GOYAL, MONIKA

Publication type:

Article

Compound Semiconductors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202400418

By:

Kyhm, Kwangseuk;
Kim, Jong Su;
Jeon, Heonsu;
Cho, Yong‐Hoon

Publication type:

Article

Compound Semiconductors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 8, p. 1, doi. 10.1002/pssa.202300223

By:

Xing, Grace;
Mi, Zetian;
Chowdhury, Srabanti

Publication type:

Article

Compound Semiconductors.

Published in:: Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 4, p. 1, doi. 10.1002/pssa.202200049
Publication type:: Article

High–Efficiency Light–Emitting Diodes and Laser Diodes and the Development of “The Alloy Road”.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 14, p. 1, doi. 10.1002/pssa.202100250

By:

Dupuis, Russell D.;
George Craford, M.

Publication type:

Article

Compound Semiconductors.

Published in:: Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 3, p. 1, doi. 10.1002/pssa.202100017
Publication type:: Article

Heterogeneous Compound Semiconductor Integration.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 3, p. 1, doi. 10.1002/pssa.202000394

By:

Cok, Ronald S.;
Gomez, David

Publication type:

Article

Compound Semiconductors.

Published in:: Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.202000022
Publication type:: Article

Simulation of the Growth Kinetics in Group IV Compound Semiconductors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 10, p. N.PAG, doi. 10.1002/pssa.201800597

By:

La Magna, Antonino;
Alberti, Alessandra;
Barbagiovanni, Erik;
Bongiorno, Corrado;
Cascio, Michele;
Deretzis, Ioannis;
La Via, Francesco;
Smecca, Emanuele

Publication type:

Article

Small Signal Parameters Extraction and RF Performance of GaN-Based Dual-Metal Cylindrical Surrounding Gate Junctionless Accumulation-Mode (DM-CSG-JAM) MOSFET.

Published in:

IETE Journal of Research, 2024, v. 70, n. 10, p. 7969, doi. 10.1080/03772063.2024.2358148

By:

Gupta, Sumedha;
Pandey, Neeta;
Gupta, R.S.

Publication type:

Article

Influence of Doping of TlInS2 Crystals with Cr and Au Transition Metals on Their Optical Absorption Edge.

Published in:

Semiconductors, 2025, v. 59, n. 2, p. 162, doi. 10.1134/S1063782624602826

By:

Ismayilova, P. H.;
Gasanov, N. Z.;
Hajiyeva, A. A.

Publication type:

Article