Works matching DE "COMPOUND semiconductors"
Results: 260
Recent Developments in Transmission Electron Microscopy for Crystallographic Characterization of Strained Semiconductor Heterostructures.
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- Crystals (2073-4352), 2025, v. 15, n. 2, p. 192, doi. 10.3390/cryst15020192
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- Article
Optical Measurement of the Stoichiometry of Thin-Film Compounds Synthetized From Multilayers: Example of Cu(In,Ga)Se<sub>2</sub>.
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- Microscopy & Microanalysis, 2023, v. 29, n. 6, p. 1847, doi. 10.1093/micmic/ozad105
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- Article
WANNIER FUNCTIONS AND CHEMICAL BONDING IN COMPOUNDS Be–IV–P2 (IV = C, Si, Ge, Sn) WITH CHALCOPYRITE STRUCTURE.
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- Journal of Structural Chemistry, 2021, v. 62, n. 6, p. 817, doi. 10.1134/S0022476621060019
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- Article
Wide bandgap Cu(In,Ga)Se<sub>2</sub> solar cells with improved energy conversion efficiency.
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- Progress in Photovoltaics, 2012, v. 20, n. 7, p. 843, doi. 10.1002/pip.2244
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- Article
The complex material properties of chalcopyrite and kesterite thin-film solar cell absorbers tackled by synchrotron-based analytics.
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- Progress in Photovoltaics, 2012, v. 20, n. 5, p. 557, doi. 10.1002/pip.1256
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- Article
Low Temperature Growth of Crystalline Semiconductors on Nonepitaxial Substrates.
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- Advanced Materials Interfaces, 2020, v. 7, n. 14, p. 1, doi. 10.1002/admi.201902191
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- Article
Semiconductor–Metal Transition in Magnetic Semiconductor Compounds at High Pressure.
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- Journal of Experimental & Theoretical Physics, 2020, v. 130, n. 1, p. 94, doi. 10.1134/S106377611912001X
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- Article
一种 Ka 频段高密度高集成瓦式 T 组件的设计.
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- Telecommunication Engineering, 2021, v. 61, n. 3, p. 373, doi. 10.3969/j.issn.1001-893x.2021.03.018
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- Article
Electrically induced insulator-to-metal transition in InP-based ion-gated transistor.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-81685-4
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- Article
In–situ strain control in epitaxial silicon carbide compound semiconductor.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-80810-7
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- Article
Synthesis and investigation of optical properties and enhancement photocatalytic activity of TiO<sub>2</sub>–SnO<sub>2</sub> semiconductor for degradation of organic compounds.
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- Scientific Reports, 2024, v. 12, n. 1, p. 1, doi. 10.1038/s41598-024-78755-y
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- Article
CRYSTAL STRUCTURE OF THE QUATERNARY SEMICONDUCTOR COMPOUND CuFeCrSe<sub>3</sub>.
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- Periódico Tchê Química, 2019, v. 16, n. 32, p. 848, doi. 10.52571/ptq.v16.n32.2019.866_periodico32_pgs_848_853.pdf
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- Article
First Principle Study and Optimal Doping for High Thermoelectric Performance of TaXSn Materials (X = Co, Ir and Rh).
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- Journal of Nano- & Electronic Physics, 2021, v. 13, n. 1, p. 01011-1, doi. 10.21272/jnep.13(1).01011
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- Article
Chalcopyrite Al(Ga, Mn)As<sub>2</sub> and AlGa(As, P) Quaternary Semiconductor: A First-principle Study.
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- Journal of Nano- & Electronic Physics, 2019, v. 11, n. 2, p. 1, doi. 10.21272/jnep.11(2).02006
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- Article
Preparation and characterization of electrodeposited in-doped CdTe semiconductor films.
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- Electrical Engineering in Japan, 2008, v. 164, n. 3, p. 12, doi. 10.1002/eej.20673
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Nanostructural Formation of Pd-Co Bimetallic Complex on HOPG Surfaces: XPS and AFM Studies.
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- Journal of Nanotechnology, 2009, p. 1, doi. 10.1155/2009/971423
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- Article
Site-Specific Surface Chemistry of GaAs (001).
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- Surface Review & Letters, 2000, v. 7, n. 5/6, p. 625, doi. 10.1016/S0218-625X(00)00078-6
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- Article
IEDM 2023.
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- 2023
- Publication type:
- Proceeding
TRAINING CALENDAR.
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- 2022
- Publication type:
- Calendar
VK-X3000 3D SURFACE PROFILER.
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- Electronic Device Failure Analysis, 2021, v. 23, n. 3, p. 48
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- Article
IEDM 2018.
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- 2018
- Publication type:
- Proceeding
Space Fence Radar Leverages Power of GaN.
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- Microwave Journal, 2016, v. 59, p. 6
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- Article
Commercial Market.
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- Microwave Journal, 2015, v. 58, n. 9, p. 49
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Heterogeneous Integration for Revolutionary Microwave Circuits at DARPA.
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- Microwave Journal, 2015, v. 58, n. 6, p. 22
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- Article
Microelectronic Revenues Continue Strong Growth.
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- Microwave Journal, 2011, v. 54, n. 7, p. 67
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- Article
COMMERCIAL MARKET.
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- Microwave Journal, 2008, v. 51, n. 2, p. 53
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- Article
Intellectual Property and Product Portfolio Expansion Drive Investments.
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- Microwave Journal, 2007, v. 50, n. 11, p. 46
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- Article
Formation, faceting, and interaction behaviors of antiphase boundaries in GaAs thin films.
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- Journal of Materials Science, 2001, v. 36, n. 17, p. 4209, doi. 10.1023/A:1017981324721
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- Article
High level illumination effect on MS'S solar cell characteristics with a new material Ga2Se3, as an intermediate layer.
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- Journal of Materials Science, 1998, v. 33, n. 8, p. 2179, doi. 10.1023/A:1004387607149
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- Article
Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors.
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- Nature, 2010, v. 468, n. 7321, p. 286, doi. 10.1038/nature09541
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- Article
GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies.
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- Nature, 2010, v. 465, n. 7296, p. 329, doi. 10.1038/nature09054
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- Article
Pressure induced phase transitions in Ga 1 - x In x P *.
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- Phase Transitions, 2004, v. 77, n. 4, p. 397, doi. 10.1080/01411590410001669084
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- Article
Performance and applications of ZnO/pyrolusite composite particle electrode.
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- Environmental Technology, 2024, v. 45, n. 23, p. 4914, doi. 10.1080/09593330.2023.2283408
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- Article
Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review.
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- Nano Convergence, 2023, v. 10, n. 1, p. 1, doi. 10.1186/s40580-023-00368-4
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- Article
Variability of temperature on the electrical properties of heterostructured CIS/Cds through SCAPS simulation for photovoltaic applications.
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- Materials for Renewable & Sustainable Energy, 2023, v. 12, n. 3, p. 235, doi. 10.1007/s40243-023-00244-5
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- Article
New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V.
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- Journal of Nano- & Electronic Physics, 2023, v. 15, n. 6, p. 1, doi. 10.21272/jnep.15(6).06024
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- Article
Chemical Deposition of Multilayer HgS Films.
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- Journal of Nano- & Electronic Physics, 2023, v. 15, n. 6, p. 1, doi. 10.21272/jnep.15(6).06010
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- Article
Basic Characteristics of Gallium Indium Arsenide Antimonide (Ga<sub>x</sub>In<sub>1 – x</sub>AsySb<sub>1 – y</sub>) Semiconductors Using MATLAB.
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- Journal of Nano- & Electronic Physics, 2022, v. 14, n. 4, p. 1, doi. 10.21272/jnep.14(4).04027
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- Article
Indirect-to-direct bandgap transition in GaP semiconductors through quantum shell formation on ZnS nanocrystals.
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- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-52535-8
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- Article
In Situ Real-Time TEM Reveals Growth, Transformation and Function in One-Dimensional Nanoscale Materials: From a Nanotechnology Perspective.
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- ISRN Nanotechnology, 2013, p. 1, doi. 10.1155/2013/893060
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- Article
First-principles study of the ground state stability of III-V bismuth compounds.
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- Philosophical Magazine Letters, 2009, v. 89, n. 12, p. 807, doi. 10.1080/09500830903304125
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- Article
FABS and LABS.
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- Microwave Journal, 2024, v. 67, p. 82
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- Article
Chips and Pommes Frites: A French Semiconductor Success Story: A review of the microwave and wireless industry in France.
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- Microwave Journal, 2024, v. 67, n. 8, p. 22
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- Article
ACHIEVEMENTS.
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- Microwave Journal, 2021, v. 64, n. 12, p. 46
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- Article
FABS and LABS: Compound Semiconductor Applications Catapult.
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- Microwave Journal, 2019, v. 62, n. 10, p. 138
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- Article
A REVIVAL OF COMPOUND SEMICONDUCTOR MATERIAL INNOVATION: STRATEGIC TECHNOLOGY SPILLOVERS IN JAPAN'S NONFERROUS METAL INDUSTRY IN THE 2000s.
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- Journal of Services Research, 2010, v. 10, n. 2, p. 9
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- Article
Nanostructured Al<sub>x</sub>In<sub>1−x</sub>P<sub>y</sub>Sb<sub>z</sub>As<sub>1−y–z</sub> semiconductor alloy as a competent material for optoelectronic and solar cell applications.
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- Optical & Quantum Electronics, 2024, v. 56, n. 12, p. 1, doi. 10.1007/s11082-024-07773-x
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- Article
Theoretical investigations on electronic and optical properties of half heusler alloy,FeNbSb for opto-electronic applications.
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- Optical & Quantum Electronics, 2022, v. 54, n. 11, p. 1, doi. 10.1007/s11082-022-03919-x
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Computational study of Ga<sub>n</sub>As<sub>m</sub> (m + n = 2–9) clusters using DFT calculations.
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- Journal of Nanoparticle Research, 2019, v. 21, n. 11, p. N.PAG, doi. 10.1007/s11051-019-4664-5
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The recent advances of research on p-type ZnO thin film.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 727, doi. 10.1007/s10854-007-9398-y
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- Article