Works matching DE "COMPOUND semiconductors"

Results: 279

New FeVTaO6 compound—synthesis, structure and selected properties.

Published in:

Journal of Materials Science, 2024, v. 59, n. 2, p. 382, doi. 10.1007/s10853-023-09168-x

By:

Filipek, Elżbieta;
Piz, Mateusz;
Dąbrowska, Grażyna;
Dulian, Piotr;
Karolus, Małgorzata;
Zubko, Maciej

Publication type:

Article

Phase decomposition in the Ni–InGaAs system at high annealing temperature.

Published in:

Journal of Materials Science, 2023, v. 58, n. 40, p. 15738, doi. 10.1007/s10853-023-09037-7

By:

Oueldna, N.;
Perrin-Pellegrino, C.;
Portavoce, A.;
Rodriguez, Ph.;
Bih, L.;
Bouayad, A.;
Hoummada, K.

Publication type:

Article

The August 2023 cover paper.

Published in:

Journal of Materials Science, 2023, v. 58, n. 29, p. 11857, doi. 10.1007/s10853-023-08761-4

By:

Carter, C. Barry

Publication type:

Article

Pressure-dependent mode Grüneisen parameters and their impact on thermal expansion coefficient of zinc-blende InN.

Published in:

Journal of Materials Science, 2023, v. 58, n. 20, p. 8379, doi. 10.1007/s10853-023-08477-5

By:

Talwar, Devki N.

Publication type:

Article

WANNIER FUNCTIONS AND CHEMICAL BONDING IN COMPOUNDS Be–IV–P2 (IV = C, Si, Ge, Sn) WITH CHALCOPYRITE STRUCTURE.

Published in:

Journal of Structural Chemistry, 2021, v. 62, n. 6, p. 817, doi. 10.1134/S0022476621060019

By:

Basalaev, Yu. M.;
Gordienko, A. B.

Publication type:

Article

Effect of Doping with Praseodymium on the Crystal Structure and Optical Absorption Edge of the TlGaS2 Compound.

Published in:

Inorganic Materials, 2024, v. 60, n. 11, p. 1293, doi. 10.1134/S0020168525700128

By:

Ismailova, P. G.;
Gasanov, N. Z.;
Gajieva, A. A.;
Guseinova, K. M.

Publication type:

Article

g-C3 N4 光催化材料改性研究进展.

Published in:

Applied Chemical Industry, 2022, v. 51, n. 5, p. 1423

By:

杨帅飞;
刘博;
刘志军;
黄爱玉;
冉良涛;
苏碧云

Publication type:

Article

Zinc oxide–tungsten‐based pyramids in construction of ultra‐broadband metamaterial absorber for solar energy harvesting.

Published in:

IET Optoelectronics (Wiley-Blackwell), 2017, v. 11, n. 3, p. 114, doi. 10.1049/iet-opt.2016.0138

By:

Ünal, Emin;
Bağmancı, Mehmet;
Karaaslan, Muharrem;
Akgol, Oguzhan;
Arat, Hüseyin Turan;
Sabah, Cumali

Publication type:

Article

Optimised THz photoconductive devices based on low‐temperature grown III–V compound semiconductors incorporating distributed Bragg reflectors.

Published in:

IET Optoelectronics (Wiley-Blackwell), 2017, v. 11, n. 2, p. 53, doi. 10.1049/iet-opt.2016.0055

By:

Wang, Yuekun;
Kostakis, Ioannis;
Saeedkia, Daryoosh;
Missous, Mohamed

Publication type:

Article

辉光放电质谱（GD-MS）法测定高纯砷中 16 种杂质元素.

Published in:

Chinese Journal of Inorganic Analytical Chemistry / Zhongguo Wuji Fenxi Huaxue, 2025, v. 15, n. 4, p. 576, doi. 10.20236/j.CJIAC.2025.04.015

By:

邹琳;
栾海光;
王凌燕;
徐萌琳

Publication type:

Article

The Development Trends and Prospects of India's Semiconductor Industry.

Published in:

China International Studies, 2024, n. 108, p. 116

By:

Lou Chunhao

Publication type:

Article

Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review.

Published in:

Nano Convergence, 2023, v. 10, n. 1, p. 1, doi. 10.1186/s40580-023-00368-4

By:

Ji, Jongho;
Kwak, Hoe-Min;
Yu, Jimyeong;
Park, Sangwoo;
Park, Jeong-Hwan;
Kim, Hyunsoo;
Kim, Seokgi;
Kim, Sungkyu;
Lee, Dong-Seon;
Kum, Hyun S.

Publication type:

Article

CRYSTAL STRUCTURE OF THE QUATERNARY SEMICONDUCTOR COMPOUND CuFeCrSe3.

Published in:

Periódico Tchê Química, 2019, v. 16, n. 32, p. 848, doi. 10.52571/ptq.v16.n32.2019.866_periodico32_pgs_848_853.pdf

By:

DELGADO, Gerzon E.;
DELGADO-NIÑO, Pilar;
GRIMA-GALLARDO, Pedro

Publication type:

Article

Performance Evaluation of GaN Based Thin Film Transistor using TCAD Simulation.

Published in:

International Journal of Electrical & Computer Engineering (2088-8708), 2017, v. 7, n. 1, p. 144, doi. 10.11591/ijece.v7i1.pp144-151

By:

Dargar, Shashi Kant;
Srivastava, J. K.;
Bharti, Santosh;
Nyati, Abha

Publication type:

Article

The Effect of the Substrate Doping on the Properties of Structure Ga2O3–ZnGeP2.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 22, n. 10, p. 1, doi. 10.1002/pssa.202400844

By:

Podzyvalov, Sergei;
Kalygina, Vera;
Yudin, Nikolay;
Slyunko, Elena;
Zinovev, Mikhail;
Kuznetsov, Vladimir;
Shaimerdenova, Leila;
Baalbaki, Houssain

Publication type:

Article

Compound Semiconductors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202400418

By:

Kyhm, Kwangseuk;
Kim, Jong Su;
Jeon, Heonsu;
Cho, Yong‐Hoon

Publication type:

Article

Compound Semiconductors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 8, p. 1, doi. 10.1002/pssa.202300223

By:

Xing, Grace;
Mi, Zetian;
Chowdhury, Srabanti

Publication type:

Article

Compound Semiconductors.

Published in:: Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 4, p. 1, doi. 10.1002/pssa.202200049
Publication type:: Article

High–Efficiency Light–Emitting Diodes and Laser Diodes and the Development of “The Alloy Road”.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 14, p. 1, doi. 10.1002/pssa.202100250

By:

Dupuis, Russell D.;
George Craford, M.

Publication type:

Article

Compound Semiconductors.

Published in:: Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 3, p. 1, doi. 10.1002/pssa.202100017
Publication type:: Article

Heterogeneous Compound Semiconductor Integration.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 3, p. 1, doi. 10.1002/pssa.202000394

By:

Cok, Ronald S.;
Gomez, David

Publication type:

Article

Compound Semiconductors.

Published in:: Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.202000022
Publication type:: Article

Simulation of the Growth Kinetics in Group IV Compound Semiconductors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 10, p. N.PAG, doi. 10.1002/pssa.201800597

By:

La Magna, Antonino;
Alberti, Alessandra;
Barbagiovanni, Erik;
Bongiorno, Corrado;
Cascio, Michele;
Deretzis, Ioannis;
La Via, Francesco;
Smecca, Emanuele

Publication type:

Article

Compound Semiconductors.

Published in:: Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 8, p. 1, doi. 10.1002/pssa.201800189
Publication type:: Article

Electrical characteristics of lead iodide crystal devices on flexible substrate under mechanical tensile strain.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 4, p. 823, doi. 10.1002/pssa.201330319

By:

Sun, Hui;
Zhu, Xinghua;
Yang, Dingyu;
Yang, Jun;
Gao, Xiuying;
Li, Xu

Publication type:

Article

Diffusion models of grown-in and implanted p-type dopant in III-V semiconductor compounds.

Published in:

European Physical Journal - Applied Physics, 2024, v. 99, p. 1, doi. 10.1051/epjap/2023230208

By:

Koumetz, Serge D.

Publication type:

Article

Indirect-to-direct bandgap transition in GaP semiconductors through quantum shell formation on ZnS nanocrystals.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-52535-8

By:

Shin, Hongjoo;
Hong, Doosun;
Cho, Hyunjin;
Jang, Hanhwi;
Kim, Geon Yeong;
Song, Kyeong Min;
Choi, Min-Jae;
Kim, Donghun;
Jung, Yeon Sik

Publication type:

Article

An inorganic-blended p-type semiconductor with robust electrical and mechanical properties.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-48628-z

By:

Meng, You;
Wang, Weijun;
Fan, Rong;
Lai, Zhengxun;
Wang, Wei;
Li, Dengji;
Li, Xiaocui;
Quan, Quan;
Xie, Pengshan;
Chen, Dong;
Shao, He;
Li, Bowen;
Wu, Zenghui;
Yang, Zhe;
Yip, SenPo;
Wong, Chun-Yuen;
Lu, Yang;
Ho, Johnny C.

Publication type:

Article

Tailored TiO2 Protection Layer Enabled Efficient and Stable Microdome Structured p‐GaAs Photoelectrochemical Cathodes.

Published in:

Advanced Energy Materials, 2020, v. 10, n. 9, p. 1, doi. 10.1002/aenm.201902985

By:

Cao, Shiyao;
Kang, Zhuo;
Yu, Yanhao;
Du, Junli;
German, Lazarus;
Li, Jun;
Yan, Xiaoqin;
Wang, Xudong;
Zhang, Yue

Publication type:

Article

Band Edge Engineering of Oxide Photoanodes for Photoelectrochemical Water Splitting: Integration of Subsurface Dipoles with Atomic-Scale Control.

Published in:

Advanced Energy Materials, 2016, v. 6, n. 7, p. 1, doi. 10.1002/aenm.201502154

By:

Hikita, Yasuyuki;
Nishio, Kazunori;
Seitz, Linsey C.;
Chakthranont, Pongkarn;
Tachikawa, Takashi;
Jaramillo, Thomas F.;
Hwang, Harold Y.

Publication type:

Article

Correction: Investigation of thermal dependence of phonon frequencies, sound velocity, mechanical and optical characteristics of the β-GaN semiconductor compound.

Published in:

2023

By:

Abuali, Ahmed M;
Elkenany, Elkenany B

Publication type:

Correction Notice

Investigation of thermal dependence of phonon frequencies, sound velocity, mechanical and optical characteristics of the β-GaN semiconductor compound.

Published in:

Pramana: Journal of Physics, 2023, v. 97, n. 2, p. 1, doi. 10.1007/s12043-023-02528-x

By:

Abuali, Ahmed M;
Elkenany, Elkenany B

Publication type:

Article

Electronic, magneto-optic and thermoelectric properties of KCaN2 Heuslerenes: A DFT study.

Published in:

Pramana: Journal of Physics, 2022, v. 96, n. 4, p. 1, doi. 10.1007/s12043-022-02415-x

By:

Hashemzadeh, Sh;
Nedaee-Shakarab, B;
Elahi, S M;
Boochani, A;
Akbari, H

Publication type:

Article

Phase Equilibria in the Ag2S–Sb2S3–SnS2 System and the Novel Quaternary Chalcogenide Ag11Sb3SnS12.

Published in:

Journal of Phase Equilibria & Diffusion, 2024, v. 45, n. 3, p. 723, doi. 10.1007/s11669-024-01126-7

By:

Berezniuk, O. P.;
Kogut, Y. M.;
Gulay, L. D.;
Piskach, L. V.

Publication type:

Article

Cu-In intermetallic compound inks for CuInS solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 8, p. 1124, doi. 10.1007/s10854-010-0271-z

By:

Chen, Guanbi;
Lei Wang;
Sheng, Xia;
Deren Yang

Publication type:

Article

Electrical, structural and morphological characteristics of rapidly annealed Pd/n-InP (100) Schottky structure.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 7, p. 854, doi. 10.1007/s10854-010-0225-5

By:

Ashok Kumar, A.;
Janardhanam, V.;
Rajagopal Reddy, V.

Publication type:

Article

Electrical and optical properties of P-doped ZnO thin films by annealing temperatures in Nitrogen ambient.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 3, p. 248, doi. 10.1007/s10854-010-0123-x

By:

Seong Kang;
Yang Joung;
Jung Han;
Yung Yoon

Publication type:

Article

The recent advances of research on p-type ZnO thin film.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 727, doi. 10.1007/s10854-007-9398-y

By:

Dai, L. P.;
Deng, H.;
Mao, F. Y.;
Zang, J. D.

Publication type:

Article

Electrodeposition of indium antimonide (InSb) from dimethyl sulfoxide-based electrolytes.

Published in:

Journal of Solid State Electrochemistry, 2024, v. 28, n. 10, p. 3755, doi. 10.1007/s10008-024-05947-x

By:

Monnens, Wouter;
Billiet, Naomi;
Binnemans, Koen;
Fransaer, Jan

Publication type:

Article

El primer transistor europeo. Un éxito que pudo ser y no fue.

Published in:

Revista Española de Física, 2023, v. 37, n. 3, p. 7

By:

Mártil, Ignacio

Publication type:

Article

Recent Advances in III–V Compounds/Polymer Hybrid Solar Cells.

Published in:

Solar RRL, 2023, v. 7, n. 19, p. 1, doi. 10.1002/solr.202300435

By:

Chen, Jiaying;
Mo, Youtian;
Guo, Chaoying;
Guo, Jiansen;
Xu, Bingshe;
Deng, Xi;
Xue, Quan;
Li, Guoqiang

Publication type:

Article

Effect of Self‐Seed Inducing on the Growth Mechanism and Photovoltaic Performance of Cu2ZnSnSe4 Thin Films.

Published in:

Solar RRL, 2022, v. 6, n. 4, p. 1, doi. 10.1002/solr.202101047

By:

Liang, Yunfeng;
Zeng, Chunhong;
Zeng, Longlong;
Yan, Genghua;
Yuan, Ye;
Lin, Xianzhong;
Zhu, Hai;
Mai, Yaohua;
Hong, Ruijiang

Publication type:

Article

Exploring fundamental properties of Mg0.915A0.085H2 (A = Ti, Fe) for potential hydrogen storage application: First‐principles study.

Published in:

International Journal of Energy Research, 2021, v. 45, n. 10, p. 14971, doi. 10.1002/er.6770

By:

Irfan, Muhammad;
Azam, Sikander;
Vu, Tuan V.;
Goumri‐Said, Souraya

Publication type:

Article

Structural, electronic and optoelectronic properties of AB5C8 (A = Cu/Ag; B = In and C = S, Se and Te) compounds.

Published in:

International Journal of Energy Research, 2021, v. 45, n. 3, p. 4014, doi. 10.1002/er.6057

By:

Begum, Yasmeen;
Khan, Shamim;
Reshak, Ali H.;
Laref, Amel;
Amir, Zoobia;
Murtaza, Ghulam;
Bila, Jiri;
Johan, Mohd R.;
Al‐Noor, Taghreed H.

Publication type:

Article

Simulation studies on photovoltaic response of ultrathin CuSb(S/Se)2 ternary compound semiconductors absorber‐based single junction solar cells.

Published in:

International Journal of Energy Research, 2020, v. 44, n. 5, p. 3724, doi. 10.1002/er.5158

By:

Gupta, Goutam Kumar;
Dixit, Ambesh

Publication type:

Article

Anomalous hall effect in Mn δ-doped GaAs/In0.17Ga0.83As/GaAs quantum wells with high hole mobility.

Published in:

JETP Letters, 2007, v. 85, n. 1, p. 27, doi. 10.1134/S0021364007010067

By:

Aronzon, B. A.;
Kul'bachinskiĭ, V. A.;
Gurin, P. V.;
Davydov, A. B.;
Ryl'kov, V. V.;
Granovskiĭ, A. B.;
Vikhrova, O. V.;
Danilov, Yu. A.;
Zvonkov, B. N.;
Horikoshi, Y.;
Onomitsu, K.

Publication type:

Article

Spin dynamics in the regime of hopping conductivity.

Published in:

JETP Letters, 2007, v. 85, n. 1, p. 55, doi. 10.1134/S0021364007010110

By:

Lyubinskiy, I. S.;
Dmitriev, A. P.;
Kachorovskii, V. Yu.

Publication type:

Article

State-of-the-Art Materials Used in MEMS Micromirror Arrays for Photonic Applications.

Published in:

Photonics, 2024, v. 11, n. 3, p. 253, doi. 10.3390/photonics11030253

By:

Liu, Shujie;
Kästner, Philipp;
Donatiello, Roland;
Shrivastava, Anup;
Smolarczyk, Marek;
Iskhandar, Mustaqim Siddi Que;
Hasan, Md Kamrul;
Caruso, Giuseppe;
Chen, Jiahao;
Elsaka, Basma;
Baby, Shilby;
Löber, Dennis;
Kusserow, Thomas;
Adam, Jost;
Hillmer, Hartmut

Publication type:

Article

一种 Ka 频段高密度高集成瓦式 T 组件的设计.

Published in:

Telecommunication Engineering, 2021, v. 61, n. 3, p. 373, doi. 10.3969/j.issn.1001-893x.2021.03.018

By:

罗鑫

Publication type:

Article

Pushing the boundaries: an interview with Dae-Hyun Kim on terahertz devices.

Published in:

National Science Review, 2024, v. 11, n. 3, p. 1, doi. 10.1093/nsr/nwae013

By:

Wang, Defu

Publication type:

Article