Works matching DE "COMPLEMENTARY metal oxide semiconductors"

Results: 4552

Design Techniques for High-Speed and Low Power SAR ADC: A Review.

Published in:

Journal of Circuits, Systems & Computers, 2025, v. 34, n. 12, p. 1, doi. 10.1142/S0218126625300041

By:

Tiwari, Vikas;
Nagaria, Rajendra Kumar

Publication type:

Article

Memcapacitor Emulator Based on Voltage Differencing Buffered Amplifiers.

Published in:

IETE Journal of Research, 2025, v. 71, n. 4, p. 1411, doi. 10.1080/03772063.2025.2460668

By:

Konal, Mustafa;
Kacar, Firat

Publication type:

Article

Design and Analysis of High Speed Phase Frequency Detector with Zero Dead Zone in PLL.

Published in:

IETE Journal of Research, 2025, v. 71, n. 4, p. 1190, doi. 10.1080/03772063.2025.2450038

By:

Kumar, Peta Guruprakash;
Bhatt, Darshak

Publication type:

Article

基于视觉的任意反射面速度干涉仪自动准直系统.

Published in:

Science Technology & Engineering, 2025, v. 25, n. 16, p. 6797, doi. 10.12404/j.issn.1671-1815.2404502

By:

高炜;
闫亚东;
韦明智;
李奇;
庞放心

Publication type:

Article

In Situ Time-Based Sensor for Process Identification Using Amplified Back-End-of-Line Resistance and Capacitance.

Published in:

Sensors (14248220), 2025, v. 25, n. 11, p. 3255, doi. 10.3390/s25113255

By:

Hsueh, Jen-Chieh;
Kines, Mike;
Tantawy, Yousri Ahmed;
Smith, Dale Shane;
McCue, Jamin;
Dupaix, Brian;
Patel, Vipul J.;
Khalil, Waleed

Publication type:

Article

Analysis and Design of Class-D Outphasing Power Amplifier with Non-Isolating Balun Combiner.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 11, p. 2196, doi. 10.3390/electronics14112196

By:

Bae, Jiyun;
Jeong, Munsu;
Yoo, Sangjin;
Nam, Ilku;
Lee, Ockgoo

Publication type:

Article

Perovskite Quantum Dot-Based Memory Technologies: Insights from Emerging Trends.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 11, p. 873, doi. 10.3390/nano15110873

By:

Ullah, Fateh;
Fredj, Zina;
Sawan, Mohamad

Publication type:

Article

A Temperature Noise Correction Method for CMOS Spatial Camera Using LSTM With Attention Mechanism.

Published in:

IET Computers & Digital Techniques (Wiley-Blackwell), 2025, v. 2025, p. 1, doi. 10.1049/cdt2/6670185

By:

Cheng, Long;
Wang, Xueying;
Xu, Jing;
Wang, Chao

Publication type:

Article

A 10.7‐ μA 103‐dB DR Hybrid Delta‐Sigma Modulator for Sensing Applications.

Published in:

International Journal of Circuit Theory & Applications, 2025, v. 53, n. 6, p. 3555, doi. 10.1002/cta.4303

By:

Zhang, Huizhu;
Wu, Xinjie;
Tang, Zhong;
Tan, Nianxiong;
Yu, Xiaopeng;
Lu, Zhenghao

Publication type:

Article

Frequency Compensation of Three-Stage Amplifier with Self-Cascode Structure and DTMOS Transistor with Active LHP Zero Circuit.

Published in:

Journal of Circuits, Systems & Computers, 2025, v. 34, n. 10, p. 1, doi. 10.1142/S0218126625502263

By:

Gupta, Om Krishna;
Pandey, Neeta;
Gupta, Maneesha

Publication type:

Article

Buck Converter Scheme with High Transient Response.

Published in:

Journal of Circuits, Systems & Computers, 2025, v. 34, n. 10, p. 1, doi. 10.1142/S0218126625502251

By:

Chou, Hsiao-Hsing;
Lin, Jun-You;
Cho, Jia-Ruei;
Chen, Hsin-Liang

Publication type:

Article

Light‐Induced Radix Modulation and Optoelectronic Synaptic Properties in Ternary‐Logic Devices.

Published in:

Small Structures, 2025, v. 6, n. 6, p. 1, doi. 10.1002/sstr.202400530

By:

Park, Chohyeon;
Lim, Jung Wook

Publication type:

Article

Amorphous Gallium‐Oxide‐Based Non‐Filamentary Memristive Device with Highly Repeatable Multiple Resistance States.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400765

By:

Toprak, Onur;
Maudet, Florian;
Wollgarten, Markus;
Van Dijck, Charlotte;
Thewes, Roland;
Deshpande, Veeresh;
Dubourdieu, Catherine

Publication type:

Article

A 57–64 GHz Receiver Front End in 40 nm CMOS.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 2091, doi. 10.3390/electronics14102091

By:

Psycharis, Ioannis-Dimitrios;
Tsourtis, Vasileios;
Kalivas, Grigorios

Publication type:

Article

Bulk-Driven CMOS Differential Stages for Ultra-Low-Voltage Ultra-Low-Power Operational Transconductance Amplifiers: A Comparative Analysis.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 2085, doi. 10.3390/electronics14102085

By:

Shah, Muhammad Omer;
Ballo, Andrea;
Pennisi, Salvatore

Publication type:

Article

A High-Speed 8-Bit Single-Channel SAR ADC with Tailored Bit Intervals and Split Capacitors †.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 2032, doi. 10.3390/electronics14102032

By:

Li, Xinyu;
Wang, Ruida;
He, Liulu;
Yoshioka, Kentaro

Publication type:

Article

A 0.6 V 68.2 dB 0.42 µW SAR-ΣΔ ADC for ASIC Chip in 0.18 µm CMOS.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 2030, doi. 10.3390/electronics14102030

By:

Li, Xinyu;
Yoshioka, Kentaro;
Wang, Zhongfeng;
Lin, Jun;
Zhu, Congyi

Publication type:

Article

Hash-Based Message Authentication Code with a Reverse Fuzzy Extractor for a CMOS Image Sensor †.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 1971, doi. 10.3390/electronics14101971

By:

Rogi, Yuki;
Hagizaki, Manami;
Oyama, Tatsuya;
Ogawa, Hiroaki;
Yoshida, Kota;
Fujino, Takeshi;
Okura, Shunsuke

Publication type:

Article

A 50 Gb/s 0.42 pJ/b Non-Return-to-Zero Transmitter for Extra-Short-Reach SerDes.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 1955, doi. 10.3390/electronics14101955

By:

Sun, Lili;
Jin, Zhongxu;
Liu, Yanchao;
Yu, Xiaohua;
Ni, Ronghua

Publication type:

Article

An Ultra-Wideband Low-Noise Amplifier with a New Cross-Coupling Noise-Canceling Technique for 28 nm CMOS Technology.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 1904, doi. 10.3390/electronics14101904

By:

Cui, Yuanping;
Ma, Kaixue;
Hu, Kejie

Publication type:

Article

A 0.3 V Current Differencing Buffered Amplifier and Its Application in Current-Mode Third-Order Low-Pass Filters.

Published in:

Applied Sciences (2076-3417), 2025, v. 15, n. 10, p. 5740, doi. 10.3390/app15105740

By:

Khateb, Fabian;
Kumngern, Montree;
Kulej, Tomasz

Publication type:

Article

A Low-Power and Low-Noise 4-12 GHz Buck CMOS Low-Noise Amplifier with Current-Reused Technique.

Published in:

Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials, 2025, v. 55, n. 1, p. 65, doi. 10.33180/InfMIDEM2025.106

By:

Jian Liu;
Li Li

Publication type:

Article

CMOS Low-Power, Fully-Programmable Gaussian/Trapezoidal Fuzzy Membership Function Generator.

Published in:

Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials, 2025, v. 55, n. 1, p. 25, doi. 10.33180/InfMIDEM2025.102

By:

Azizian, Sarkis;
Fathi, Amir;
Azizian, Sarhad;
Mashoufi, Behbood;
Dilmaghani, Mehdi Sefidgar

Publication type:

Article

Developments at IMEC.

Published in:: Solid State Technology, 2001, v. 44, n. 10, p. 32
Publication type:: Article

Epitaxial wafer market.

Published in:

Solid State Technology, 2001, v. 44, n. 6, p. 60

By:

Royalty, Robert

Publication type:

Article

Is IBM 130nm-process leader?

Published in:: Solid State Technology, 2001, v. 44, n. 2, p. 42
Publication type:: Article

Ultrashallow junctions or ultrathin SOI?

Published in:

Solid State Technology, 2000, v. 43, n. 9, p. 66

By:

Current, M.I.;
Bedell, S.W.;
Malik, I.J.;
Feng, L.M.;
Henley, F.J.

Publication type:

Article

Chromeless phase-shift masks used for sub-100nm SOI CMOS transistors.

Published in:

Solid State Technology, 2000, v. 43, n. 7, p. 116

By:

Fritze, Michael;
Astolfi, David K.;
Yost, Donna-Ruth W.;
Wyatt, Peter W.;
Liu, Hua-Yu

Publication type:

Article

Motorola's SiGe:C process targets wireless.

Published in:

Solid State Technology, 2000, v. 43, n. 6, p. 40

By:

Burggraaf, Pieter

Publication type:

Article

semiconductor manufacturing techniques for ferroelectric liquid crystal microdisplays.

Published in:

Solid State Technology, 2000, v. 43, n. 5, p. 151

By:

Handschy, Mark

Publication type:

Article

Tech Briefs.

Published in:: Solid State Technology, 2000, v. 43, n. 4, p. 26
Publication type:: Article

Roadmap-caliber BiCMOS from TI.

Published in:

Solid State Technology, 2000, v. 43, n. 4, p. 24

By:

Lunday, Christine

Publication type:

Article

CMOS: How far can it go?

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. S14

By:

Deleonibus, Simon;
Caillat, Christian;
Gautier, Jacques;
Guegan, Georges;
Heitzmann, Michel;
Martin, Francois;
Tedesco, Serge

Publication type:

Article

IEDM 1999 focused on CMOS solutions.

Published in:

Solid State Technology, 2000, v. 43, n. 2, p. 30

By:

Burggraaf, Pieter "Pete"

Publication type:

Article

IMEC developments.

Published in:: Solid State Technology, 1999, v. 42, n. 10, p. 36
Publication type:: Article

Salicides and alternative technologies for future ICs: Part 2.

Published in:

Solid State Technology, 1999, v. 42, n. 8, p. 55

By:

Kitti, Jorge A.;
Shiau, Wei-Tsun

Publication type:

Article

Salicides and alternative technologies for future ICs: Part 1.

Published in:

Solid State Technology, 1999, v. 42, n. 6, p. 81

By:

Kittl, Jorge A.;
Shiau, Wei-Tsun;
Miles, Donald;
Violette, Katherine E.;
Hu, Jerry C.;
Hong, Qi-Zhong

Publication type:

Article

Tech briefs.

Published in:: Solid State Technology, 1999, v. 42, n. 2, p. 18
Publication type:: Article

1999 looks like a very busy year.

Published in:

Solid State Technology, 1998, v. 41, n. 11, p. 12

By:

Haavind, Robert

Publication type:

Article

Philips invests in dicrete technologies.

Published in:: Solid State Technology, 1998, v. 41, n. 10, p. 48
Publication type:: Article

CMOS `down in the mouth.'

Published in:

Solid State Technology, 1998, v. 41, n. 7, p. 60

By:

Burggraaf, Pieter

Publication type:

Article

Jet vapor deposition reduces gate leakage.

Published in:

Solid State Technology, 1998, v. 41, n. 4, p. 36

By:

L.S.

Publication type:

Article

Single-wafer processing of in situ-doped polycrystalline Si and Si1-xGex.

Published in:

Solid State Technology, 1998, v. 41, n. 3, p. S5

By:

Bensahel, D.;
Campidelli, Y.;
Hernandez, C.;
Martin, F.;
Sagnes, I.;
Meyer, D.J.

Publication type:

Article

The RACE to find what's next.

Published in:

Electronics Systems & Software, 2005, v. 3, n. 6, p. 42, doi. 10.1049/ess:20050607

By:

Collins, Luke

Publication type:

Article

NEC and Toshiba pool resources on 45nm.

Published in:: Electronics Systems & Software, 2005, v. 3, n. 6, p. 5
Publication type:: Article

Car designs push voltages up in advanced processes.

Published in:: Electronics Systems & Software, 2005, v. 3, n. 6, p. 4
Publication type:: Article

Freescale joins Euro chip technology programme.

Published in:: Electronics Systems & Software, 2005, v. 3, n. 4, p. 3
Publication type:: Article

Water cooling goes down the die.

Published in:: Electronics Systems & Software, 2005, v. 3, n. 3, p. 10
Publication type:: Article

Process shrinks set to level out.

Published in:: Electronics Systems & Software, 2005, v. 3, n. 3, p. 4
Publication type:: Article

Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 5, p. 4339, doi. 10.1007/s10854-019-00747-w

By:

Seixas, Luís Eduardo;
Gonçalez, Odair Lellis;
Vaz, Rafael Galhardo;
da Costa Telles, Antonio Carlos;
Finco, Saulo;
Gimenez, Salvador Pinillos

Publication type:

Article