Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy.
- Published in:
- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 918, doi. 10.1002/pssb.201552617
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- Publication type:
- Article
Works matching DE "CHEMICAL beam epitaxy"
Results: 6
1
2
Crystalline Quality and Structure of MBE-Grown Ferromagnetic Semiconductor ZnSnAs<sub>2</sub>:Mn Thin Films Revealed by High-Resolution X-ray Diffraction Measurements.
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- Zeitschrift für Physikalische Chemie, 2016, v. 230, n. 4, p. 499, doi. 10.1515/zpch-2015-0649
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- Publication type:
- Article
3
Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography.
- Published in:
- Materials (1996-1944), 2016, v. 9, n. 7, p. 511, doi. 10.3390/ma9070511
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- Publication type:
- Article
4
Nanoindentation studies of gallium arsenide heteroepitaxial layers.
- Published in:
- Crystal Research & Technology, 2014, v. 49, n. 8, p. 575, doi. 10.1002/crat.201300405
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- Publication type:
- Article
5
Step-flow growth of GaN(0001) on 4H-SiC(0001) by plasma-assisted molecular beam epitaxy.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 9, p. 2498, doi. 10.1002/pssa.201533001
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- Publication type:
- Article
6
Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method.
- Published in:
- Semiconductors, 2016, v. 50, n. 11, p. 1511, doi. 10.1134/S1063782616110166
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- Publication type:
- Article