P.20: Transfer Characteristic-Based Electro-Optical Technique for Characterization of Carrier Lifetimes with Associated Physical Mechanisms in Polymer-based Organic Thin-Film Transistors.
- Published in:
- 2013
- By:
- Publication type:
- Other
Works matching DE "CARRIER lifetime (Semiconductors)"
Results: 13
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Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells.
- Published in:
- Semiconductors, 2016, v. 50, n. 12, p. 1651, doi. 10.1134/S1063782616120174
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- Publication type:
- Article
3
Temperature dependence of the carrier lifetime in narrow-gap CdHgTe solid solutions: Radiative recombination.
- Published in:
- Semiconductors, 2015, v. 49, n. 9, p. 1170, doi. 10.1134/S1063782615090067
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- Publication type:
- Article
4
Temperature dependence of the carrier lifetime in CdHgTe narrow-gap solid solutions with consideration for Auger processes.
- Published in:
- Semiconductors, 2015, v. 49, n. 4, p. 432, doi. 10.1134/S1063782615040065
- By:
- Publication type:
- Article
5
Empirical Study of the Disparity in Radiation Tolerance of the Minority-Carrier Lifetime Between II-VI and III-V MWIR Detector Technologies for Space Applications.
- Published in:
- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5405, doi. 10.1007/s11664-017-5628-0
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- Publication type:
- Article
6
Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy.
- Published in:
- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5361, doi. 10.1007/s11664-017-5646-y
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- Publication type:
- Article
7
Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices.
- Published in:
- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3184, doi. 10.1007/s11664-014-3239-6
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- Publication type:
- Article
8
Modeling of Dark Current in HgCdTe Infrared Detectors.
- Published in:
- Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3303, doi. 10.1007/s11664-013-2733-6
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- Publication type:
- Article
9
Arsenic p-Doping of HgCdTe Grown by Molecular Beam Epitaxy (MBE): A Solved Problem?
- Published in:
- Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3331, doi. 10.1007/s11664-013-2739-0
- By:
- Publication type:
- Article
10
Characterization of Plasma Etching Process Damage in HgCdTe.
- Published in:
- Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3006, doi. 10.1007/s11664-013-2654-4
- By:
- Publication type:
- Article
11
Fundamental Carrier Lifetime Exceeding 1 µs in Cs<sub>2</sub>AgBiBr<sub>6</sub> Double Perovskite.
- Published in:
- Advanced Materials Interfaces, 2018, v. 5, n. 15, p. 1, doi. 10.1002/admi.201800464
- By:
- Publication type:
- Article
12
Optimal Parameters Estimation of Silicon Solar Cell Using Fuzzy Logic: Analytical Method.
- Published in:
- Journal of Qadisiyah Computer Science & Mathematics, 2021, v. 13, n. 1, p. 22, doi. 10.29304/jqcm.2021.13.1.741
- By:
- Publication type:
- Article
13
ALLOYS WITH NATIVE LATTICE PARAMETERS GROWN ON COMPOSITIONALLY GRADED BUFFERS: STRUCTURAL AND OPTICAL PROPERTIES.
- Published in:
- International Journal of High Speed Electronics & Systems, 2012, v. 21, n. 1, p. -1, doi. 10.1142/S0129156412500139
- By:
- Publication type:
- Article