Works matching DE "CARBON nanotube field effect transistors"
Results: 145
SQTRNG: Spintronic Quaternary True Random Number Generator.
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- SPIN (2010-3247), 2025, v. 15, n. 1, p. 1, doi. 10.1142/S2010324724500243
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Tuning Electrostatic Gating of Semiconducting Carbon Nanotubes by Controlling Protein Orientation in Biosensing Devices.
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- Angewandte Chemie, 2021, v. 133, n. 37, p. 20346, doi. 10.1002/ange.202104044
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On localized modes of free vibrations of single-walled carbon nanotubes embedded in nonhomogeneous elastic medium.
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- ZAMM -- Journal of Applied Mathematics & Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik, 2014, v. 94, n. 1/2, p. 130, doi. 10.1002/zamm.201200140
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Non-covalent polymer wrapping of carbon nanotubes and the role of wrapped polymers as functional dispersants.
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- Science & Technology of Advanced Materials, 2015, v. 16, n. 2, p. 1, doi. 10.1088/1468-6996/16/2/024802
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An efficient structure for T-CNTFETs with intrinsic-n-doped impurity distribution pattern in drain region.
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- Turkish Journal of Electrical Engineering & Computer Sciences, 2018, v. 26, n. 5, p. 2335, doi. 10.3906/elk-1709-180
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A CNFET full adder cell design for high-speed arithmetic units.
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- Turkish Journal of Electrical Engineering & Computer Sciences, 2017, v. 25, n. 3, p. 2399, doi. 10.3906/elk-1512-8
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A Full Adder Design with CNFETs for Real Time, Fault Tolerant and Mission Critical Applications.
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- Electronics / Elektronika (1450-5843), 2020, v. 24, n. 2, p. 66, doi. 10.7251/ELS2024066S
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A Novel High-Speed and Low-PDP Approximate Full Adder Cell for Image Blending.
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- Mathematics (2227-7390), 2023, v. 11, n. 12, p. 2649, doi. 10.3390/math11122649
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Investigation of Carbon Nanotube FET with Coaxial Geometry.
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- Journal of Nano- & Electronic Physics, 2020, v. 12, n. 5, p. 05027-1, doi. 10.21272/jnep.12(5).05027
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Design and Analysis of Ternary D-Latch Using CNTFETs.
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- Journal of Nano- & Electronic Physics, 2019, v. 11, n. 4, p. 1, doi. 10.21272/jnep.11(4).04011
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Energy Efficient Design of Four-operand Multiplier Architecture using CNTFET Technology.
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- Journal of Nano- & Electronic Physics, 2018, v. 10, n. 2, p. 1, doi. 10.21272/jnep.10(2).02022
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Impact of SWCNT Band Gaps on the Performance of a Ballistic Carbon Nanotube Field Effect Transistors (CNTFETs).
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- Journal of Nano- & Electronic Physics, 2017, v. 9, n. 4, p. 04007-1, doi. 10.21272/jnep.9(4).04007
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Comparative Analysis of CNTFET and CMOS Logic based Arithmetic Logic Unit.
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- Journal of Nano- & Electronic Physics, 2017, v. 9, n. 4, p. 04018-1, doi. 10.21272/jnep.9(4).04018
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Toward the Commercialization of Carbon Nanotube Field Effect Transistor Biosensors.
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- Biosensors (2079-6374), 2023, v. 13, n. 3, p. 326, doi. 10.3390/bios13030326
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Current-Mode High-Precision Full-Wave Rectifier Based on Carbon Nanotube Field Effect Transistors.
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- Majlesi Journal of Electrical Engineering, 2015, v. 9, n. 3, p. 43
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Carbon Nanotube Field Effect Transistors Development and Perspectives: Part 1.
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- Journal of Active & Passive Electronic Devices, 2020, v. 15, n. 3/4, p. 175
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The Design and Simulation of an Efficient Quaternary Full-Adder Based on Carbon Nanotube Field Effect Transistor.
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- International Journal of Industrial Electronics Control & Optimization, 2024, v. 7, n. 2, p. 153
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Asymmetric lightly doped Schottky barrier CNTFET.
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- Micro & Nano Letters (Wiley-Blackwell), 2016, v. 11, n. 3, p. 169, doi. 10.1049/mnl.2015.0434
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Temperature dependence of carrier transport and electrical characteristics of Schottky-barrier carbon nanotube field effect transistors.
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- Micro & Nano Letters (Wiley-Blackwell), 2016, v. 11, n. 2, p. 114, doi. 10.1049/mnl.2015.0448
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Low power area efficient self-gated flip flop: Design, implementation and analysis in emerging devices.
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- Engineering & Applied Science Research, 2022, v. 49, n. 6, p. 744, doi. 10.14456/easr.2022.72
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TEMPERATURE VARIATION EFFECTS ON CARBON NANOTUBE FIELD EFFECT TRANSISTOR (CNTFET) BASED ON SIMULATION STUDY.
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- Bayero Journal of Pure & Applied Sciences, 2022, p. 204, doi. 10.4314/bajopas.v13i1.33S
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A PROCEDURE TO ANALYZE DIGITAL CIRCUITS IN CNTFET AND CMOS TECHNOLOGY BY ADS.
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- i-Manager's Journal on Electronics Engineering, 2023, v. 13, n. 4, p. 1, doi. 10.26634/jele.13.4.20048
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DESIGN AND ANALYSIS OF TERNARY DELAY FLIP-FLOP IMPLEMENTED WITH CARBON NANOTUBE FIELD EFFECT TRANSISTOR.
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- i-Manager's Journal on Electronics Engineering, 2023, v. 13, n. 3, p. 1
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ANALYSIS OF CARBON NANOTUBE FOR LOW POWER NANO ELECTRONICS APPLICATIONS.
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- i-Manager's Journal on Electronics Engineering, 2023, v. 13, n. 2, p. 46, doi. 10.26634/jele.13.2.19383
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A COMPARISON OF CNTFET MODELS THROUGH A SIMULATION STUDY OF DIGITAL CIRCUITS.
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- i-Manager's Journal on Electronics Engineering, 2018, v. 9, n. 2, p. 1
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Development of Quantum Simulator for Emerging Nanoelectronics Devices.
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- ISRN Nanotechnology, 2012, p. 1, doi. 10.5402/2012/617214
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Microscopic investigation of single-wall carbon nanotube uptake by Daphnia magna.
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- Nanotoxicology, 2014, v. 8, p. 2, doi. 10.3109/17435390.2013.847504
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- Article
Optimization of CNFET Parameters for High Performance Digital Circuits.
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- Advances in Materials Science & Engineering, 2016, p. 1, doi. 10.1155/2016/6303725
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Efficient Design Approaches to Model Ternary D-Flip-Flop and Shift Registers in CNT Technology.
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- Circuits, Systems & Signal Processing, 2024, v. 43, n. 12, p. 7989, doi. 10.1007/s00034-024-02840-w
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- Article
Energy Efficient Ternary Multi-trit Multiplier Design Using Novel Adders.
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- Circuits, Systems & Signal Processing, 2024, v. 43, n. 7, p. 4050, doi. 10.1007/s00034-024-02659-5
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Carbon Nanotubes-Based Digitally Programmable Current Follower.
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- VLSI Design, 2018, p. 1, doi. 10.1155/2018/1080817
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High-Efficient Circuits for Ternary Addition.
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- VLSI Design, 2014, p. 1, doi. 10.1155/2014/534587
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Fabrication of Carbon Nanotube Field-Effect Transistor Using Shadow Mask Technique.
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- International Journal of Nanoelectronics & Materials, 2022, v. 15, n. 3, p. 189
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A Simplified Surface Potential Based Current Model for Gate-AllAround Carbon Nanotube Field Effect Transistor (GAA-CNFET).
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- International Journal of Nanoelectronics & Materials, 2021, v. 14, n. 2, p. 159
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Two Low Power and High Efficient Full Adder Cells Based on CNTFET Technology.
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- International Journal of Nanoelectronics & Materials, 2018, v. 11, n. 3, p. 321
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Energy-Efficient Exact and Approximate CNTFET-Based Ternary Full Adders.
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- Circuits, Systems & Signal Processing, 2024, v. 43, n. 5, p. 2982, doi. 10.1007/s00034-023-02589-8
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Read Improved and Low Leakage Power CNTFET Based Hybrid 10t SRAM Cell for Low Power Applications.
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- Circuits, Systems & Signal Processing, 2024, v. 43, n. 3, p. 1627, doi. 10.1007/s00034-023-02529-6
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Low-Cost and Variation-Aware Spintronic Ternary Random Number Generator.
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- Circuits, Systems & Signal Processing, 2024, v. 43, n. 2, p. 1175, doi. 10.1007/s00034-023-02509-w
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Energy-Efficient and PVT-Tolerant CNFET-Based Ternary Full Adder Cell.
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- Circuits, Systems & Signal Processing, 2021, v. 40, n. 7, p. 3523, doi. 10.1007/s00034-020-01638-w
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High-Efficient, Ultra-Low-Power and High-Speed 4:2 Compressor with a New Full Adder Cell for Bioelectronics Applications.
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- Circuits, Systems & Signal Processing, 2020, v. 39, n. 12, p. 6247, doi. 10.1007/s00034-020-01459-x
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Multi-digit Binary-to-Quaternary and Quaternary-to-Binary Converters and Their Applications in Nanoelectronics.
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- Circuits, Systems & Signal Processing, 2020, v. 39, n. 4, p. 1920, doi. 10.1007/s00034-019-01235-6
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CNTFET-Based Design of Ternary Arithmetic Modules.
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- Circuits, Systems & Signal Processing, 2019, v. 38, n. 10, p. 4640, doi. 10.1007/s00034-019-01070-9
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A Novel Energy-Efficient Ternary Successor and Predecessor Using CNTFET.
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- Circuits, Systems & Signal Processing, 2016, v. 35, n. 3, p. 875, doi. 10.1007/s00034-015-0084-7
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A Symmetric, Multi-Threshold, High-Speed and Efficient-Energy 1-Bit Full Adder Cell Design Using CNFET Technology.
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- Circuits, Systems & Signal Processing, 2015, v. 34, n. 3, p. 739, doi. 10.1007/s00034-014-9887-1
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Erratum to: A Symmetric, Multi-Threshold, High-Speed and Efficient-Energy 1-Bit Full Adder Cell Design Using CNFET Technology.
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- 2015
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- Erratum
A Novel CNTFET-based Ternary Full Adder.
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- Circuits, Systems & Signal Processing, 2014, v. 33, n. 3, p. 665, doi. 10.1007/s00034-013-9672-6
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Superhydrophobic carbon nanotube/ polydimethylsiloxane composite coatings.
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- Materials Science & Technology, 2015, v. 31, n. 14, p. 1745, doi. 10.1179/1743284714Y.0000000752
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A high‐capacity and nonvolatile spintronic associative memory hardware accelerator.
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- IET Circuits, Devices & Systems (Wiley-Blackwell), 2023, v. 17, n. 4, p. 205, doi. 10.1049/cds2.12160
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Comprehensive survey of ternary full adders: Statistics, corrections, and assessments.
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- IET Circuits, Devices & Systems (Wiley-Blackwell), 2023, v. 17, n. 3, p. 111, doi. 10.1049/cds2.12152
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An energy‐efficient dynamic comparator in Carbon Nanotube Field Effect Transistor technology for successive approximation register ADC applications.
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- IET Circuits, Devices & Systems (Wiley-Blackwell), 2022, v. 16, n. 4, p. 360, doi. 10.1049/cds2.12112
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