Works matching DE "CAPACITANCE-voltage characteristics"
Results: 218
Origin of Hole‐Trapping States in Solution‐Processed Copper(I) Thiocyanate and Defect‐Healing by I<sub>2</sub> Doping.
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- Advanced Functional Materials, 2023, v. 33, n. 25, p. 1, doi. 10.1002/adfm.202209504
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The parameters evaluation and optimization of polycrystalline diamond micro-electrodischarge machining assisted by electrode tool vibration.
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- International Journal of Advanced Manufacturing Technology, 2012, v. 60, n. 9-12, p. 985, doi. 10.1007/s00170-011-3674-y
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Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications.
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- Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202000835
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A model to describe the humplike feature observed in the accumulation branch of capacitance-voltage characteristics of MOS capacitors with oxide-hosted silicon nanoparticles.
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- Technical Physics Letters, 2012, v. 38, n. 9, p. 845, doi. 10.1134/S106378501209026X
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Investigation of the Dielectric Properties of Polymer-Dispersive Liquid-Crystal Films Dopated with Silicon Dioxide Nanoparticles.
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- Technical Physics, 2024, v. 69, n. 5, p. 1157, doi. 10.1134/S106378422404008X
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Effects of gamma irradiation on electrical parameters of metal–insulator–semiconductor structure with silicon nitride interfacial insulator layer.
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- Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena, 2014, v. 169, n. 9, p. 791, doi. 10.1080/10420150.2014.950265
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Fully Integrated on-Chip Switched DC-DC Converter for Battery-Powered Mixed-Signal SoCs.
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- Symmetry (20738994), 2017, v. 9, n. 1, p. 18, doi. 10.3390/sym9010018
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Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots.
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- Journal of Nanotechnology, 2013, p. 1, doi. 10.1155/2013/302647
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A Study on Theoretical Performance of Graphene FET using Analytical Approach with Reference to High Cutoff Frequency.
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- International Journal of Nanoscience, 2016, v. 15, n. 3, p. 1, doi. 10.1142/S0219581X16400019
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Enhancing oxidation rate of 4H-SiC by oxygen ion implantation.
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- Journal of Materials Science, 2019, v. 54, n. 2, p. 1147, doi. 10.1007/s10853-018-2921-0
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Admittance of Pentacene- Based Mis-Structures with Two-Layer Insulator SiO<sub>2</sub>–Al<sub>2</sub>O<sub>3</sub>.
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- Russian Physics Journal, 2021, v. 64, n. 7, p. 1281, doi. 10.1007/s11182-021-02454-8
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Admittance of Barrier Structures Based on Mercury Cadmium Telluride.
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- Russian Physics Journal, 2020, v. 63, n. 3, p. 432, doi. 10.1007/s11182-020-02054-y
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Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al<sub>2</sub>O<sub>3</sub> Insulator.
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- Russian Physics Journal, 2018, v. 60, n. 11, p. 1853, doi. 10.1007/s11182-018-1294-9
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Electron Concentration in the Near-Surface Graded-Gap Layer of MBE n-HgCdTe ( x = 0.22-0.40) Determined from the Capacitance Measurements of MIS-Structures.
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- Russian Physics Journal, 2017, v. 60, n. 1, p. 128, doi. 10.1007/s11182-017-1051-5
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Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide.
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- Russian Physics Journal, 2016, v. 59, n. 6, p. 757, doi. 10.1007/s11182-016-0833-5
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Temperature and Field Dependences of Parameters of the Equivalent Circuit Elements of MIS Structures Based on MBE n-HgCdTe in the Strong Inversion Mode.
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- Russian Physics Journal, 2016, v. 59, n. 7, p. 920, doi. 10.1007/s11182-016-0855-z
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Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-HgCdTe Grown by Molecular Beam Epitaxy.
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- Russian Physics Journal, 2016, v. 59, n. 2, p. 284, doi. 10.1007/s11182-016-0769-9
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Determining the Equivalent Circuit Elements of Heterostructures with Multiple Quantum Wells.
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- Russian Physics Journal, 2016, v. 58, n. 11, p. 1619, doi. 10.1007/s11182-016-0692-0
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Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO/SIN.
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- Russian Physics Journal, 2015, v. 58, n. 4, p. 540, doi. 10.1007/s11182-015-0532-7
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Dynamical and passive characteristics of the Ag/TlGaSeS/Ag RF resonators.
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- Crystal Research & Technology, 2012, v. 47, n. 6, p. 615, doi. 10.1002/crat.201200057
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- Article
Study of Schottky Diodes Based on an Array of Silicon Wires Obtained by Cryogenic Dry Etching.
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- Technical Physics Letters, 2022, v. 48, n. 2, p. 23, doi. 10.1134/S106378502202002X
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- Article
Influence of the Proton Irradiation Temperature on the Characteristics of High-Power High-Voltage Silicon Carbide Schottky Diodes.
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- Technical Physics Letters, 2020, v. 46, n. 3, p. 287, doi. 10.1134/S1063785020030244
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- Article
Heterobarrier Varactors with Nonuniformly Doped Modulation Layers.
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- Technical Physics Letters, 2019, v. 45, n. 10, p. 1063, doi. 10.1134/S1063785019100250
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Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge.
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- Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 4, p. 220, doi. 10.1002/pssr.201510056
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Experimental evaluation of the forming process of virgin HfO<sub>2</sub> memory cells by capacitance-voltage measurements.
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- Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 7, p. 634, doi. 10.1002/pssr.201409153
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DIELECTRIC AND INTERFACE STABILITY OF FILMS.
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- Surface Review & Letters, 2012, v. 19, n. 6, p. -1, doi. 10.1142/S0218625X12500643
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- Article
OTRA-based Grounded-FDNR and Grounded-Inductance Simulators and Their Applications.
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- Circuits, Systems & Signal Processing, 2012, v. 31, n. 2, p. 489, doi. 10.1007/s00034-011-9345-2
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Capacitance Characteristic Optimization of Germanium MOSFETs with Aluminum Oxide by Using a Semiconductor-Device-Simulation-Based Multi-Objective Evolutionary Algorithm Method.
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- Materials & Manufacturing Processes, 2015, v. 30, n. 4, p. 520, doi. 10.1080/10426914.2014.984213
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- Article
Impact of Substrate Biasing During AlN Growth by PEALD on Al<sub>2</sub>O<sub>3</sub>/AlN/GaN MOS Capacitors.
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- Advanced Materials Interfaces, 2022, v. 9, n. 5, p. 1, doi. 10.1002/admi.202101731
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Automated instrumentation for nonequilibrium capacitance-voltage measurements at a semiconductor-electrolyte interface.
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- Instruments & Experimental Techniques, 2017, v. 60, n. 1, p. 119, doi. 10.1134/S0020441216060014
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- Article
Operational Stability Analysis of Blue Thermally Activated Delayed Fluorescence Organic Light-Emitting Diodes Using the Capacitance-Voltage Method.
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- Applied Sciences (2076-3417), 2022, v. 12, n. 24, p. 13045, doi. 10.3390/app122413045
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Interfacial and structural analysis of MeV heavy ion irradiated SiC.
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- Applied Nanoscience, 2023, v. 13, n. 5, p. 3181, doi. 10.1007/s13204-021-01921-5
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Design and simulation of inorganic perovskite solar cell.
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- Applied Nanoscience, 2022, v. 12, n. 5, p. 1507, doi. 10.1007/s13204-021-02268-7
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- Article
Unipolar superlattice structures based on MBE HgCdTe for infrared detection.
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- Applied Nanoscience, 2020, v. 10, n. 12, p. 4571, doi. 10.1007/s13204-020-01297-y
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Electrical properties of n-HgCdTe MIS structures with HgTe single quantum wells.
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- Applied Nanoscience, 2020, v. 10, n. 8, p. 2489, doi. 10.1007/s13204-019-01081-7
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- Article
Comparative Study on the Separate Extraction of Interface and Bulk Trap Densities in Indium Gallium Zinc Oxide Thin-Film Transistors Using Capacitance–Voltage and Current–Voltage Characteristics.
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- Coatings (2079-6412), 2021, v. 11, n. 9, p. 1135, doi. 10.3390/coatings11091135
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- Article
Influence of Pulsed Fiber Laser Radiation on Surface Morphology and Electrical Properties of Si/SiO<sub>2</sub> Structure.
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- Journal of Laser Micro / Nanoengineering, 2015, v. 10, n. 3, p. 269, doi. 10.2961/jlmn.2015.03.0006
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- Article
Formation of a Fast Charge Transfer Channel in Quasi-2D Perovskite Solar Cells through External Electric Field Modulation.
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- Energies (19961073), 2021, v. 14, n. 21, p. 7402, doi. 10.3390/en14217402
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- Article
Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs).
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- Energies (19961073), 2020, v. 13, n. 1, p. 187, doi. 10.3390/en13010187
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- Article
Classical electrical and hydraulic Windkessel models validate physiological calculations of Windkessel (reservoir) pressure.
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- Canadian Journal of Physiology & Pharmacology, 2012, v. 90, n. 5, p. 579, doi. 10.1139/y2012-027
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- Article
p-Si/n-CrSe2 Heterojunctions Designed as High-Frequency Capacitors and Photosensors.
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- Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2591, doi. 10.1007/s11664-024-11004-0
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Design and Characterization of (Yb, Al, Cu, Au)/GeO<sub>2</sub>/C As MOS Field Effect Transistors, Negative Capacitance Effect Devices and Band Pass/Reject Filters Suitable for 4G Technologies.
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- Journal of Electronic Materials, 2022, v. 51, n. 5, p. 2510, doi. 10.1007/s11664-022-09514-w
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Encapsulant-Dependent Effects of Long-Term Low-Temperature Annealing on Interstitial Defects in Mg-Ion-Implanted GaN.
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- Journal of Electronic Materials, 2022, v. 51, n. 4, p. 1731, doi. 10.1007/s11664-022-09431-y
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- Article
Electrical Properties of 6 nm to 19 nm Thick Polyethylene Oxide Capacitors for Ion/Electron Functional Devices.
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- Journal of Electronic Materials, 2021, v. 50, n. 6, p. 2956, doi. 10.1007/s11664-020-08716-4
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- Article
Effect of Channel Engineering on Quasi-Static Capacitance-Voltage Characteristics of Double-Gate MOSFET.
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- Journal of Electronic Materials, 2020, v. 49, n. 10, p. 5816, doi. 10.1007/s11664-020-08307-3
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Dopant in Near-Surface Semiconductor Layers of Metal-Insulator-Semiconductor Structures Based on Graded-Gap p-HgCdTe Grown by Molecular-Beam Epitaxy.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 881, doi. 10.1007/s11664-015-4239-x
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Si and InGaAs Spatial Wavefunction-Switched (SWS) FETs with II-VI Gate Insulators: An Approach to the Design and Integration of Two-Bit SRAMs and Binary CMOS Logic.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3108, doi. 10.1007/s11664-015-3827-0
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- Article
Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles.
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- Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2835, doi. 10.1007/s11664-015-3692-x
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Investigation of Properties of AsSe Thin Films for Direct Conversion.
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- Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2725, doi. 10.1007/s11664-015-3758-9
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- Article
Photoinduced p-Type Conductivity in n-Type ZnO.
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- Journal of Electronic Materials, 2015, v. 44, n. 3, p. 1003, doi. 10.1007/s11664-014-3608-1
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