Works matching DE "CAPACITANCE-voltage characteristics"

Results: 226

Liquid crystal alignment properties on surface-reformed solution-derived lanthanum-doped zinc oxide films.

Published in:

Soft Materials, 2019, v. 17, n. 1, p. 32, doi. 10.1080/1539445X.2018.1545669

By:

Lee, Ju Hwan;
Won, Jonghoon;
Jeong, Hae-Chang;
Kim, Dong Hyun;
Lee, Dong Wook;
Oh, Byeong-Yun;
Han, Jeong-Min;
Kim, Tae Wan;
Seo, Dae-Shik

Publication type:

Article

p-Si/n-CrSe2 Heterojunctions Designed as High-Frequency Capacitors and Photosensors.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2591, doi. 10.1007/s11664-024-11004-0

By:

Algarni, Sabah E.;
Qasrawi, A. F.;
Khusayfan, Najla M.;
Alharbi, Seham R.;
Alfhaid, Latifah Hamad Khalid

Publication type:

Article

Effects of modulation doped n-AlGaN epilayers on the optoelectronic properties of 278-nm AlGaN-based flip-chip light-emitting devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 13, p. 12065, doi. 10.1007/s10854-019-01564-x

By:

Yang, Sipan;
Hu, Meiling;
Yin, Huan

Publication type:

Article

Study of gamma-ray radiation effects on the passivation properties of atomic layer deposited Al2O3 on silicon using deep-level transient spectroscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 2, p. 1148, doi. 10.1007/s10854-018-0383-4

By:

Chen, Zhe;
Dong, Peng;
Xie, Meng;
Li, Yun;
Yu, Xuegong;
Ma, Yao

Publication type:

Article

Physical and electrical characterization of yttrium-stabilized zirconia (YSZ) thin films deposited by sputtering and atomic-layer deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 18, p. 15349, doi. 10.1007/s10854-018-8909-3

By:

Molina-Reyes, Joel;
Tiznado, Hugo;
Soto, Gerardo;
Vargas-Bautista, Monica;
Dominguez, David;
Murillo, Eduardo;
Sweeney, Dan;
Read, John

Publication type:

Article

Effect of substrate temperature on electrical properties of (Al/p-CuSbS /Mo) Schottky diodes grown by vacuum thermal evaporation.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 12, p. 8733, doi. 10.1007/s10854-017-6598-y

By:

Nefzi, K.;
Rabhi, A.;
Kanzari, M.

Publication type:

Article

Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 12, p. 8844, doi. 10.1007/s10854-017-6613-3

By:

Tanrıkulu, E.;
Demirezen, S.;
Altındal, Ş.;
Uslu, İ.

Publication type:

Article

Frequency dependent electrical characteristics and origin of anomalous capacitance-voltage ( C-V) peak in Au/(graphene-doped PVA)/n-Si capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 11, p. 7819, doi. 10.1007/s10854-017-6478-5

By:

Yerişkin, S.;
Balbaşı, M.;
Orak, İ.

Publication type:

Article

Frequency dependent C-V and G/ω-V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 6, p. 4951, doi. 10.1007/s10854-016-6147-0

By:

Tan, S.;
Tecimer, H.;
Çiçek, O.;
Altındal, Ş

Publication type:

Article

Investigation of negative dielectric constant in Au/1 % graphene (GP) doped-CaPrCoO/n-Si structures at forward biases using impedance spectroscopy analysis.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 5, p. 3186, doi. 10.1007/s10854-015-2816-7

By:

Çetinkaya, H.;
Alialy, Sahar;
Altındal, Ş.;
Kaya, A.;
Uslu, İ.

Publication type:

Article

Photoelectrochemical studies on spray deposited copper selenide thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 7, p. 3096, doi. 10.1007/s10854-014-1989-9

By:

Yadav, Abhijit

Publication type:

Article

Preparation and dielectric properties of BaTiO-based X8R ceramics co-doped with BIT and CBS glass.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 1, p. 196, doi. 10.1007/s10854-012-0710-0

By:

Chen, Guo-hua;
Yang, Yun;
Kang, Xiao-ling;
Yuan, Chang-lai;
Zhou, Chang-rong

Publication type:

Article

Morphological, microstructural and electrical examinations on ZnO film on p-Si wafer.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 11, p. 1971, doi. 10.1007/s10854-012-0690-0

By:

Gokcen, M.;
Bal, S.;
Yildirim, G.;
Gulen, M.;
Varilci, A.

Publication type:

Article

Impact of pulsed electric field on cell disintegration and mass transfer in sugar beet.

Published in:

Food & Bioproducts Processing: Transactions of the Institution of Chemical Engineers Part C, 2012, v. 90, n. 3, p. 377, doi. 10.1016/j.fbp.2011.12.007

By:

Maskooki, Abdolmajid;
Eshtiaghi, Mohammad Naghi

Publication type:

Article

Preparation and investigation of nanostructured SnO2:Pd/ porous silicon/c-Si heterostructure solar cell.

Published in:

Journal of Solid State Electrochemistry, 2021, v. 25, n. 3, p. 1039, doi. 10.1007/s10008-020-04889-4

By:

Ismail, Raid A.;
Abdul Majeed, Aseel M.

Publication type:

Article

Integration of electrochemical capacitance–voltage characteristics: a new procedure for obtaining free charge carrier depth distribution profiles with high resolution.

Published in:

Journal of Solid State Electrochemistry, 2021, v. 25, n. 3, p. 797, doi. 10.1007/s10008-020-04855-0

By:

Yakovlev, George;
Zubkov, Vasily

Publication type:

Article

Impedance study of thiolated polyaniline.

Published in:

Journal of Solid State Electrochemistry, 2012, v. 16, n. 8, p. 2783, doi. 10.1007/s10008-012-1675-x

By:

Blomquist, Maija;
Bobacka, Johan;
Ivaska, Ari;
Levon, Kalle

Publication type:

Article

Automated system for measuring electrophysical parameters of semiconductor structures.

Published in:

Measurement Techniques, 2023, v. 66, n. 7, p. 508, doi. 10.1007/s11018-023-02252-3

By:

Pecherskaya, E. A.;
Karpanin, O. V.;
Tuzova, D. E.;
Nelyutskov, M. A.;
Antipenko, V. V.

Publication type:

Article

Effect of fluorine ion implantation on radiation-induced processes in the insulator layer of silicon-on-insulator structures.

Published in:

Inorganic Materials, 2012, v. 48, n. 3, p. 222, doi. 10.1134/S0020168512030053

By:

Gus'kova, O.;
Vorotyntsev, V.;
Abrosimova, N.;
Shobolov, E.;
Mineev, M.

Publication type:

Article

Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202000835

By:

Gupta, Prachi;
Kumar, Rudra;
Sharma, Satinder K.

Publication type:

Article

High sensitive NH3 sensor based on electrochemically etched porous silicon.

Published in:

Cogent Engineering, 2020, v. 7, n. 1, p. 1, doi. 10.1080/23311916.2020.1810880

By:

Khaniyev, B.A.;
Sagidolda, Y.;
Dikhanbayev, K.K.;
Tileu, A.O.;
Ibraimov, M.K.;
Rashad, Mohamed M.

Publication type:

Article

P.14: Distinguished Poster Paper: Separate Extraction Technique for Intrinsic Donor- and Acceptor-like Density-of-States over Full-Energy Range Sub-Bandgap in Amorphous Oxide Semiconductor Thin Film Transistors by Using One-Shot Monochromatic Photonic Capacitance-Voltage Characteristics

Published in:

2013

By:

Bae, Hagyoul;
Jun, Sungwoo;
Choi, Hyunjun;
Jo, Chunhyung;
Kim, Yun Hyeok;
Hwang, Jun Seok;
Ahn, Jaeyeop;
Choi, Sung-Jin;
Kim, Dae Hwan;
Kim, Dong Myong

Publication type:

Other

Interfacial and structural analysis of MeV heavy ion irradiated SiC.

Published in:

Applied Nanoscience, 2023, v. 13, n. 5, p. 3181, doi. 10.1007/s13204-021-01921-5

By:

Kumar, Vibhor;
Kumar, Sandeep;
Maan, A. S.;
Akhtar, Jamil

Publication type:

Article

Design and simulation of inorganic perovskite solar cell.

Published in:

Applied Nanoscience, 2022, v. 12, n. 5, p. 1507, doi. 10.1007/s13204-021-02268-7

By:

Jebakumar, J. Prince Allen;
Moni, D. Jackuline;
Gracia, D.;
Shallet, M. Daphny

Publication type:

Article

Unipolar superlattice structures based on MBE HgCdTe for infrared detection.

Published in:

Applied Nanoscience, 2020, v. 10, n. 12, p. 4571, doi. 10.1007/s13204-020-01297-y

By:

Izhnin, I. I.;
Kurbanov, K. R.;
Voitsekhovskii, A. V.;
Nesmelov, S. N.;
Dzyadukh, S. M.;
Dvoretsky, S. A.;
Mikhailov, N. N.;
Sidorov, G. Y.

Publication type:

Article

Electrical properties of n-HgCdTe MIS structures with HgTe single quantum wells.

Published in:

Applied Nanoscience, 2020, v. 10, n. 8, p. 2489, doi. 10.1007/s13204-019-01081-7

By:

Izhnin, I. I.;
Syvorotka, I. I.;
Voitsekhovskii, A. V.;
Nesmelov, S. N.;
Dzyadukh, S. M.;
Dvoretsky, S. A.;
Mikhailov, N. N.

Publication type:

Article

Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge.

Published in:

Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 4, p. 220, doi. 10.1002/pssr.201510056

By:

AllEN, Thomas G.;
Cuevas, Andres

Publication type:

Article

Experimental evaluation of the forming process of virgin HfO2 memory cells by capacitance-voltage measurements.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 7, p. 634, doi. 10.1002/pssr.201409153

By:

Khaldi, O.;
Jomni, F.;
Gonon, P.;
Vallée, C.;
Mannequin, C.;
Yangui, B.

Publication type:

Article

Analysis of Lightning Surge Transference through Three-Phase Step-Up Transformers.

Published in:

International Review of Automatic Control, 2012, v. 5, n. 5, p. 575

By:

Sarajčev, Petar;
Vasilj, Josip;
Goić, Ranko

Publication type:

Article

Voltage control scheme for a single-phase voltage source inverter using field programmable gate array.

Published in:

Australian Journal of Electrical & Electronic Engineering, 2012, v. 9, n. 2, p. 197, doi. 10.1080/1448837X.2012.11464324

By:

Amirtharaj, J. Naizath;
Siddharth, K.;
Moorthi, S.;
Kumaresan, N.

Publication type:

Article

Monitoring of ground-fault of auxiliary DC power supply in power systems based on a variable structure measuring circuit.

Published in:

Australian Journal of Electrical & Electronic Engineering, 2012, v. 9, n. 2, p. 137, doi. 10.1080/1448837X.2012.11464317

By:

Fei, W.;
Cui, X.;
Zhang, Y.

Publication type:

Article

Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots.

Published in:

Journal of Nanotechnology, 2013, p. 1, doi. 10.1155/2013/302647

By:

Nowozin, T.;
Wiengarten, A.;
Bonato, L.;
Bimberg, D.;
Lin, Wei-Hsun;
Shih-Yen Lin;
Ajour, M. N.;
Daqrouq, K.;
Balamesh, A. S.

Publication type:

Article

Analysis of current–voltage and capacitance–voltage characteristics of Zr/p-Si Schottky diode with high series resistance.

Published in:

Modern Physics Letters B, 2020, v. 34, n. 10, p. N.PAG, doi. 10.1142/S0217984920500955

By:

Aldemir, Durmuş Ali

Publication type:

Article

The analysis of the capacitance of p-InAlAs/i-InGaAs/n-InAlAs infrared photodetector.

Published in:

Optical & Quantum Electronics, 2021, v. 53, n. 5, p. 1, doi. 10.1007/s11082-021-02919-7

By:

Yang, Bokuan;
Chen, Jun

Publication type:

Article

A COMPREHENSIVE DETERMINING OF CAPACITANCE-VOLTAGE PARAMETERS OF ELECTRONIC DEVICES WITH METAL AND p-Si JUNCTION.

Published in:

Eskişehir Technical University Journal of Science & Technology B - Theoretical Sciences, 2020, v. 8, n. 2, p. 247, doi. 10.20290/estubtdb.633238

By:

COŞKUN, Fatih Mehmet

Publication type:

Article

Compact Capacitance Model of L-Shape Tunnel Field-Effect Transistors for Circuit Simulation.

Published in:

Journal of Information & Communication Convergence Engineering, 2021, v. 19, n. 4, p. 263, doi. 10.6109/jicce.2021.19.4.263

By:

Yun Seop Yu;
Najam, Faraz

Publication type:

Article

Capacitance Value Control for Metamaterial Reflectarray using Multi-layer Mushroom Structure with Parasitic Patches.

Published in:

Applied Computational Electromagnetics Society Journal, 2012, v. 27, n. 1, p. 28

By:

Maruyama, Tamami;
Furuno, Tatsuo;
Oda, Yasuhiro;
Shen, Jiyun;
Ohya, Tomoyuki

Publication type:

Article

Automated instrumentation for nonequilibrium capacitance-voltage measurements at a semiconductor-electrolyte interface.

Published in:

Instruments & Experimental Techniques, 2017, v. 60, n. 1, p. 119, doi. 10.1134/S0020441216060014

By:

Frolov, D.;
Zubkov, V.

Publication type:

Article

On the permittivity of titanium dioxide.

Published in:

Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-92021-5

By:

Bonkerud, Julie;
Zimmermann, Christian;
Weiser, Philip Michael;
Vines, Lasse;
Monakhov, Eduard V.

Publication type:

Article

On the Role of Capacitance Determination Accuracy for the Electrical Characterization of Pulsed Driven Dielectric Barrier Discharges.

Published in:

Contributions to Plasma Physics, 2013, v. 53, n. 6, p. 469, doi. 10.1002/ctpp.201200126

By:

Pipa, A. V.;
Hoder, T.;
Brandenburg, R.

Publication type:

Article

MO-CCCCTA-Based Floating Positive and Negative Inductors and Their Applications.

Published in:

Journal of Electrical & Computer Engineering, 2011, p. 1, doi. 10.1155/2011/150354

By:

Pandey, Neeta;
Bazaz, Rishik;
Manocha, Rahul

Publication type:

Article

Analysis and Measurement of Capacitance Characteristics of a Novel Light-Controlled Dual-Directional Gate Silicon-Controlled Rectifier.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 262, doi. 10.1134/S1063782621020214

By:

Yan, F.;
Wang, Y.;
Jin, X. L.;
Peng, Y.;
Luo, J.;
Yang, J.

Publication type:

Article

Comparison of the Efficiency of Promising Heterostructure Frequency-Multiplier Diodes of the THz-Frequency Range.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1360, doi. 10.1134/S1063782620100073

By:

Dyukov, D. I.;
Fefelov, A. G.;
Korotkov, A. V.;
Pavelyev, D. G.;
Kozlov, V. A.;
Obolenskaya, E. S.;
Ivanov, A. S.;
Obolensky, S. V.

Publication type:

Article

Influence of Hydrogen on the Impedance of Pd/Oxide/InP Structures.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 658, doi. 10.1134/S1063782620060160

By:

Shutaev, V. A.;
Grebenshchikova, E. A.;
Sidorov, V. G.;
Kompan, M. E.;
Yakovlev, Yu. P.

Publication type:

Article

Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1393, doi. 10.1134/S1063782619100208

By:

Sobolev, M. M.;
Yavsin, D. A.;
Gurevich, S. A.

Publication type:

Article

Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 465, doi. 10.1134/S1063782619040109

By:

Goldman, E. I.;
Levashov, S. A.;
Chucheva, G. V.

Publication type:

Article

Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 42, doi. 10.1134/S1063782619010081

By:

Goldman, E. I.;
Kuharskaya, N. F.;
Levashov, S. A.;
Chucheva, G. V.

Publication type:

Article

Specific Features of the Electrochemical Capacitance-Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions.

Published in:

Semiconductors, 2018, v. 52, n. 8, p. 1004, doi. 10.1134/S1063782618080250

By:

Yakovlev, G. E.;
Dorokhin, M. V.;
Zubkov, V. I.;
Dudin, A. L.;
Zdoroveyshchev, A. V.;
Malysheva, E. I.;
Danilov, Yu. A.;
Zvonkov, B. N.;
Kudrin, A. V.

Publication type:

Article

Study of Deep Levels in a HIT Solar Cell.

Published in:

Semiconductors, 2018, v. 52, n. 7, p. 926, doi. 10.1134/S1063782618070254

By:

Vikhrov, S. P.;
Vishnyakov, N. V.;
Gudzev, V. V.;
Ermachikhin, A. V.;
Shilina, D. V.;
Litvinov, V. G.;
Maslov, A. D.;
Mishustin, V. G.;
Terukov, E. I.;
Titov, A. S.

Publication type:

Article

Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p- i- n Structures on the Relaxation time of Nonequilibrium Carriers.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 165, doi. 10.1134/S1063782618020173

By:

Sobolev, M.;
Soldatenkov, F.

Publication type:

Article