Works matching DE "CAPACITANCE-voltage characteristics"

Results: 226

Cobalt selenide thin film: photovoltaic and impedance spectral studies by simple chemical grown technique.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 22, p. 26588, doi. 10.1007/s10854-021-07035-6

By:

Gaur, Muddsar L.;
Bhuse, Vijaykumar M.;
Sanadi, Kallappa R.;
Rathod, Kishan C.;
Barache, Umesh B.;
Gaikwad, Shashikant H.

Publication type:

Article

The response of high barrier Schottky diodes to light illumination.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 4, p. 4448, doi. 10.1007/s10854-020-05186-6

By:

Lapa, Havva Elif;
Kökce, Ali;
Aldemir, Durmuş Ali;
Özdemir, Ahmet Faruk

Publication type:

Article

Necessity of submonolayer LiF anode interlayers for improved device performance in blue phosphorescent OLEDs.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 1, p. 1161, doi. 10.1007/s10854-020-04889-0

By:

Lee, Seung Il;
Liang, Kunyu;
Hui, Lok Shu;
Arbi, Ramis;
Munir, Muhammad;
Lee, Seok Je;
Kim, Jin Wook;
Kim, Ki Ju;
Kim, Woo Young;
Turak, Ayse

Publication type:

Article

Development of highly reliable BiFeO3/HfO2/Silicon gate stacks for ferroelectric non-volatile memories in IoT applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 24, p. 22107, doi. 10.1007/s10854-020-04713-9

By:

Tripathi, Pramod Narayan;
Ojha, Sanjeev Kumar;
Nazarov, Alexey

Publication type:

Article

Effects of modulation doped n-AlGaN epilayers on the optoelectronic properties of 278-nm AlGaN-based flip-chip light-emitting devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 13, p. 12065, doi. 10.1007/s10854-019-01564-x

By:

Yang, Sipan;
Hu, Meiling;
Yin, Huan

Publication type:

Article

Study of gamma-ray radiation effects on the passivation properties of atomic layer deposited Al2O3 on silicon using deep-level transient spectroscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 2, p. 1148, doi. 10.1007/s10854-018-0383-4

By:

Chen, Zhe;
Dong, Peng;
Xie, Meng;
Li, Yun;
Yu, Xuegong;
Ma, Yao

Publication type:

Article

Physical and electrical characterization of yttrium-stabilized zirconia (YSZ) thin films deposited by sputtering and atomic-layer deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 18, p. 15349, doi. 10.1007/s10854-018-8909-3

By:

Molina-Reyes, Joel;
Tiznado, Hugo;
Soto, Gerardo;
Vargas-Bautista, Monica;
Dominguez, David;
Murillo, Eduardo;
Sweeney, Dan;
Read, John

Publication type:

Article

Effect of substrate temperature on electrical properties of (Al/p-CuSbS /Mo) Schottky diodes grown by vacuum thermal evaporation.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 12, p. 8733, doi. 10.1007/s10854-017-6598-y

By:

Nefzi, K.;
Rabhi, A.;
Kanzari, M.

Publication type:

Article

Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 12, p. 8844, doi. 10.1007/s10854-017-6613-3

By:

Tanrıkulu, E.;
Demirezen, S.;
Altındal, Ş.;
Uslu, İ.

Publication type:

Article

Frequency dependent electrical characteristics and origin of anomalous capacitance-voltage ( C-V) peak in Au/(graphene-doped PVA)/n-Si capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 11, p. 7819, doi. 10.1007/s10854-017-6478-5

By:

Yerişkin, S.;
Balbaşı, M.;
Orak, İ.

Publication type:

Article

Frequency dependent C-V and G/ω-V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 6, p. 4951, doi. 10.1007/s10854-016-6147-0

By:

Tan, S.;
Tecimer, H.;
Çiçek, O.;
Altındal, Ş

Publication type:

Article

Investigation of negative dielectric constant in Au/1 % graphene (GP) doped-CaPrCoO/n-Si structures at forward biases using impedance spectroscopy analysis.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 5, p. 3186, doi. 10.1007/s10854-015-2816-7

By:

Çetinkaya, H.;
Alialy, Sahar;
Altındal, Ş.;
Kaya, A.;
Uslu, İ.

Publication type:

Article

Photoelectrochemical studies on spray deposited copper selenide thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 7, p. 3096, doi. 10.1007/s10854-014-1989-9

By:

Yadav, Abhijit

Publication type:

Article

Preparation and dielectric properties of BaTiO-based X8R ceramics co-doped with BIT and CBS glass.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 1, p. 196, doi. 10.1007/s10854-012-0710-0

By:

Chen, Guo-hua;
Yang, Yun;
Kang, Xiao-ling;
Yuan, Chang-lai;
Zhou, Chang-rong

Publication type:

Article

Morphological, microstructural and electrical examinations on ZnO film on p-Si wafer.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 11, p. 1971, doi. 10.1007/s10854-012-0690-0

By:

Gokcen, M.;
Bal, S.;
Yildirim, G.;
Gulen, M.;
Varilci, A.

Publication type:

Article

Current-voltage and capacitance-voltage characteristics of the ITO/polyaniline doped boron trifloride/Al Schottky diode.

Published in:

Polymers for Advanced Technologies, 2008, v. 19, n. 12, p. 1882, doi. 10.1002/pat.1223

By:

Yakuphanoglu, Fahrettin;
Şenkal, B. Filiz

Publication type:

Article

On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts.

Published in:

Turkish Journal of Physics, 2020, v. 44, n. 4, p. 302, doi. 10.3906/fiz-2007-11

By:

TÜRÜT, Abdulmecit

Publication type:

Article

High sensitive NH3 sensor based on electrochemically etched porous silicon.

Published in:

Cogent Engineering, 2020, v. 7, n. 1, p. 1, doi. 10.1080/23311916.2020.1810880

By:

Khaniyev, B.A.;
Sagidolda, Y.;
Dikhanbayev, K.K.;
Tileu, A.O.;
Ibraimov, M.K.;
Rashad, Mohamed M.

Publication type:

Article

Photoelectric characteristics of quantum dots photodetector and fluorescence detection application.

Published in:

Integrated Ferroelectrics, 2017, v. 182, n. 1, p. 39, doi. 10.1080/10584587.2017.1352381

By:

Wang, M. J.;
Liang, K. K.;
Zhang, X. J.;
Feng, Y. P.

Publication type:

Article

Retention Analysis of a Non-Volatile Ferroelectric Memory Device.

Published in:

Integrated Ferroelectrics, 2013, v. 140, n. 1, p. 23, doi. 10.1080/10584587.2012.741383

By:

John, Caroline S.;
Macleod, Todd C.;
Evans, Joe;
HO, Fat D.

Publication type:

Article

Fermi-level pinning and effect of deposition bath pH on the flat-band potential of electrodeposited n-Cu2O in an aqueous electrolyte.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 10, p. 1965, doi. 10.1002/pssb.201600288

By:

Kafi, F. S. B.;
Jayathileka, K. M. D. C.;
Wijesundera, R. P.;
Siripala, W.

Publication type:

Article

On the behavior of silicon donor in conductive Al xGa1- xN (0.63 ≤ x ≤ 1).

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 6, p. 1306, doi. 10.1002/pssb.201451559

By:

Nilsson, D.;
Trinh, X. T.;
Janzén, E.;
Son, N. T.;
Kakanakova‐Georgieva, A.

Publication type:

Article

Influence of electron irradiation on p-n junctions in SiGe superlattices.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 1, p. 153, doi. 10.1002/pssb.201400196

By:

Siahlo, Andrei I.;
Poklonski, Nikolai A.;
Lastovski, Stanislav B.;
Presting, Hartmut;
Sobolev, Nikolai A.

Publication type:

Article

Introduction and annealing of primary defects in proton-bombarded n-GaN.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 1, p. 211, doi. 10.1002/pssb.201349191

By:

Schmidt, Matthias;
de Meyer, Hannes;
Johan Janse van Rensburg, Pieter;
Ernst Meyer, Walter;
Danie Auret, Francois

Publication type:

Article

Fully Integrated on-Chip Switched DC-DC Converter for Battery-Powered Mixed-Signal SoCs.

Published in:

Symmetry (20738994), 2017, v. 9, n. 1, p. 18, doi. 10.3390/sym9010018

By:

Heungjun Jeon;
Kyung Ki Kim;
Yong-Bin Kim

Publication type:

Article

ULTRA WIDEBAND WAVE-BASED LINEAR INVERSION IN LOSSLESS LADDER NETWORKS.

Published in:

Progress in Electromagnetics Research, 2012, v. 125, p. 97, doi. 10.2528/pier12010804

By:

Shlivinski, A.

Publication type:

Article

OTRA-based Grounded-FDNR and Grounded-Inductance Simulators and Their Applications.

Published in:

Circuits, Systems & Signal Processing, 2012, v. 31, n. 2, p. 489, doi. 10.1007/s00034-011-9345-2

By:

Gupta, Ashish;
Senani, Raj;
Bhaskar, D.;
Singh, A.

Publication type:

Article

Preparation and investigation of nanostructured SnO2:Pd/ porous silicon/c-Si heterostructure solar cell.

Published in:

Journal of Solid State Electrochemistry, 2021, v. 25, n. 3, p. 1039, doi. 10.1007/s10008-020-04889-4

By:

Ismail, Raid A.;
Abdul Majeed, Aseel M.

Publication type:

Article

Integration of electrochemical capacitance–voltage characteristics: a new procedure for obtaining free charge carrier depth distribution profiles with high resolution.

Published in:

Journal of Solid State Electrochemistry, 2021, v. 25, n. 3, p. 797, doi. 10.1007/s10008-020-04855-0

By:

Yakovlev, George;
Zubkov, Vasily

Publication type:

Article

Impedance study of thiolated polyaniline.

Published in:

Journal of Solid State Electrochemistry, 2012, v. 16, n. 8, p. 2783, doi. 10.1007/s10008-012-1675-x

By:

Blomquist, Maija;
Bobacka, Johan;
Ivaska, Ari;
Levon, Kalle

Publication type:

Article

Electrical Characteristics of p–i–n Mesa-Photodiodes Based on InGaAs/InP Heterostructures.

Published in:

Journal of Applied Spectroscopy, 2024, v. 91, n. 2, p. 378, doi. 10.1007/s10812-024-01730-y

By:

Gogorishvili, I.;
Tutunjyan, A.;
Sakharova, T.;
Melikyan, M.;
Khuchua, N.;
Kuparashvili, D.

Publication type:

Article

Parallel soft switching converter with fewer switch counts.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 9, p. 589, doi. 10.1049/el.2018.0571

By:

Lin, B. R.

Publication type:

Article

Electronic properties and potential applications of the heterojunction between silicon and multi-nanolayer amorphous selenium.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 18, p. 1270, doi. 10.1049/el.2017.1413

By:

John, J. D.;
Saito, I.;
Toyama, R.;
Ochiai, J.;
Yamada, T.;
Masuzawa, T.;
Chua, D. H. C.;
Okano, K.

Publication type:

Article

Effect on the Electrical Characterizations of Temperature and Frequency Depending on Series Resistance and Interface States in MS Structure.

Published in:

Journal of Polytechnic, 2017, v. 20, n. 2, p. 313, doi. 10.2339/2017.20.2.313-318

By:

KINACI, Barış

Publication type:

Article

The Potential Barrier and Thermal Stability Dependence on PI Thickness of Al/PI/c-Si Schottky Diode.

Published in:

Iraqi Journal of Science, 2020, v. 61, n. 12, p. 3235, doi. 10.24996/ijs.2020.61.12.12

By:

Rasheed, Hussein Kh.;
Kareem, Aseel A.

Publication type:

Article

Compact Capacitance Model of L-Shape Tunnel Field-Effect Transistors for Circuit Simulation.

Published in:

Journal of Information & Communication Convergence Engineering, 2021, v. 19, n. 4, p. 263, doi. 10.6109/jicce.2021.19.4.263

By:

Yun Seop Yu;
Najam, Faraz

Publication type:

Article

On the permittivity of titanium dioxide.

Published in:

Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-92021-5

By:

Bonkerud, Julie;
Zimmermann, Christian;
Weiser, Philip Michael;
Vines, Lasse;
Monakhov, Eduard V.

Publication type:

Article

Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory.

Published in:

Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-66339-5

By:

Heo, Kwan-Jun;
Kim, Han-Sang;
Lee, Jae-Yun;
Kim, Sung-Jin

Publication type:

Article

Multichannel AlGaN/GaN Schottky Barrier Diode with Low Turn‐On Voltage and On‐Resistance.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 13, p. 1, doi. 10.1002/pssa.202200194

By:

Li, Ang;
Wang, Chong;
Zheng, Xuefeng;
Ma, Xiaohua;
He, Yunlong;
Liu, Kai;
Zhao, Yaopeng;
Hao, Yue

Publication type:

Article

Electrical Properties of Selectively Deposited Graphene‐Like Film on Silicon Oxide/Silicon Structures Preirradiated with Low Energy Electrons.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 3, p. 1, doi. 10.1002/pssa.202100208

By:

Knyazev, Maxim;
Sedlovets, Daria;
Soltanovich, Oleg;
Khodos, Igor;
Koveshnikov, Sergei

Publication type:

Article

Precise prediction of optical responses of all types of liquid crystal displays by behavioral models.

Published in:

Journal of the Society for Information Display, 2013, v. 21, n. 1, p. 2, doi. 10.1002/jsid.143

By:

Kim, Jong‐Man;
Cho, Youngmin;
Kim, Jongbin;
Lee, Seung‐Hyuck;
Kim, Kwangjoon;
Lee, Seung‐Woo

Publication type:

Article

Modeling of current-voltage characteristics for double-gate a-IGZO TFTs and its application to AMLCDs.

Published in:

2012

By:

Baek, Gwanghyeon;
Kanicki, Jerzy

Publication type:

Other

Defects with Deep Levels in High-Voltage Gradual p–i–n Heterojunctions AlGaAsSb/GaAs.

Published in:

Semiconductors, 2024, v. 58, n. 4, p. 354, doi. 10.1134/S1063782624040146

By:

Sobolev, M. M.;
Soldatenkov, F. Yu.

Publication type:

Article

Methods of Determining the Concentration and Mobility in Layers of Space-Charge Regions.

Published in:

Semiconductors, 2023, v. 57, n. 1, p. 81, doi. 10.1134/S1063782623010050

By:

Karamyshev, V. P.

Publication type:

Article

Analysis and Measurement of Capacitance Characteristics of a Novel Light-Controlled Dual-Directional Gate Silicon-Controlled Rectifier.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 262, doi. 10.1134/S1063782621020214

By:

Yan, F.;
Wang, Y.;
Jin, X. L.;
Peng, Y.;
Luo, J.;
Yang, J.

Publication type:

Article

Comparison of the Efficiency of Promising Heterostructure Frequency-Multiplier Diodes of the THz-Frequency Range.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1360, doi. 10.1134/S1063782620100073

By:

Dyukov, D. I.;
Fefelov, A. G.;
Korotkov, A. V.;
Pavelyev, D. G.;
Kozlov, V. A.;
Obolenskaya, E. S.;
Ivanov, A. S.;
Obolensky, S. V.

Publication type:

Article

Influence of Hydrogen on the Impedance of Pd/Oxide/InP Structures.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 658, doi. 10.1134/S1063782620060160

By:

Shutaev, V. A.;
Grebenshchikova, E. A.;
Sidorov, V. G.;
Kompan, M. E.;
Yakovlev, Yu. P.

Publication type:

Article

Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1393, doi. 10.1134/S1063782619100208

By:

Sobolev, M. M.;
Yavsin, D. A.;
Gurevich, S. A.

Publication type:

Article

Yb/InSe/Sb2Te3/Au BROKEN GAP HETEROJUNCTION DEVICES DESIGNED AS CURRENT RECTIFIERS, TUNABLE MOS CAPACITORS AND GIGAHERTZ MICROWAVE CAVITIES.

Published in:

Chalcogenide Letters, 2021, v. 18, n. 3, p. 113, doi. 10.15251/cl.2021.183.113

By:

ALFHAID, L. H. K.;
QASRAWI, A. F.;
ALGARNI, S. E.

Publication type:

Article

Electrical characteristics of metal-insulator-semiconductor and metal-insulator-semiconductor-insulator-metal capacitors under different high- k gate dielectrics investigated in the semi-classical and quantum mechanical models.

Published in:

Bulletin of Materials Science, 2017, v. 40, n. 1, p. 67, doi. 10.1007/s12034-016-1341-5

By:

HLALI, SLAH;
HIZEM, NEILA;
KALBOUSSI, ADEL

Publication type:

Article