Works matching DE "CAPACITANCE-voltage characteristics"

Results: 227

Impact of pulsed electric field on cell disintegration and mass transfer in sugar beet.

Published in:

Food & Bioproducts Processing: Transactions of the Institution of Chemical Engineers Part C, 2012, v. 90, n. 3, p. 377, doi. 10.1016/j.fbp.2011.12.007

By:

Maskooki, Abdolmajid;
Eshtiaghi, Mohammad Naghi

Publication type:

Article

Processes of Coating Formation by Pulsed MOCVD in the ZrO2–HfO2 System.

Published in:

Journal of Structural Chemistry, 2024, v. 65, n. 11, p. 2135, doi. 10.1134/S0022476624110027

By:

Shutilov, R. A.;
Maksimovskii, E. A.;
Popovetskii, P. S.;
Korolkov, I. V.;
Gismatulin, A. A.;
Igumenov, I. K.

Publication type:

Article

Electrical Characteristics of p–i–n Mesa-Photodiodes Based on InGaAs/InP Heterostructures.

Published in:

Journal of Applied Spectroscopy, 2024, v. 91, n. 2, p. 378, doi. 10.1007/s10812-024-01730-y

By:

Gogorishvili, I.;
Tutunjyan, A.;
Sakharova, T.;
Melikyan, M.;
Khuchua, N.;
Kuparashvili, D.

Publication type:

Article

Effect of Ag2O nanosheets thickness on the performance of Al/GeO2/Ag2O/GeO2/C multifunctional electronic devices.

Published in:

Journal of the Arab American University, 2023, v. 9, n. 1, p. 1

By:

Qasrawi, Atef;
Khanfar, Hazem

Publication type:

Article

Capacitance Value Control for Metamaterial Reflectarray using Multi-layer Mushroom Structure with Parasitic Patches.

Published in:

Applied Computational Electromagnetics Society Journal, 2012, v. 27, n. 1, p. 28

By:

Maruyama, Tamami;
Furuno, Tatsuo;
Oda, Yasuhiro;
Shen, Jiyun;
Ohya, Tomoyuki

Publication type:

Article

Influence of Temperature and Illumination on the Electrical Characteristics of Nanocrystalline Cu2S Based Heterojunctions for Photodetector Application.

Published in:

Acta Physica Polonica: A, 2015, v. 127, n. 6, p. 1688, doi. 10.12693/APhysPolA.127.1688

By:

SOLIMAN, H. S.;
FARAG, A. A. M.;
SAADELDIN, M. M.;
SAWABY, K.

Publication type:

Article

Electrical and Interfacial Properties of p-Si/P3HT Organic-on-Inorganic Junction Barrier.

Published in:

Acta Physica Polonica: A, 2011, v. 120, n. 3, p. 558, doi. 10.12693/APhysPolA.120.558

By:

Yakuphanoglu, F.;
Shah, M.;
Aslam Farooq, W.

Publication type:

Article

Deep Levels in GaN p-n Junctions Studied by Deep Level Transient Spectroscopy and Laplace Transform Deep-Level Spectroscopy.

Published in:

Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 669, doi. 10.12693/APhysPolA.119.669

By:

Dyba, P.;
Placzek-Popko, E.;
Zielony, E.;
Gumienny, Z.;
Grzanka, S.;
Czernecki, R.;
Suski, T.

Publication type:

Article

Deep Levels Induced by CdTe/ZnTe Quantum Dots.

Published in:

Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 630, doi. 10.12693/APhysPolA.119.630

By:

Zielony, E.;
Placzek-Popko, E.;
Roznicka, A.;
Gumienny, Z.;
Szatkowski, J.;
Dyba, P.;
Pacuski, W.;
Kruse, C.;
Hommel, D.;
Guziewicz, M.

Publication type:

Article

Capacitance-Voltage Studies of Ti/p-ZnTe Schottky Barrier Structures Containing CdTe Quantum Dots.

Published in:

Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 621, doi. 10.12693/APhysPolA.119.621

By:

Placzek-Popko, E.;
Szatkowski, J.;
Zielony, E.;
Gumienny, Z.;
Dobaczewski, L.;
Karczewski, G.

Publication type:

Article

Capacitance-tunable microwave resonators with intersecting resonance regions.

Published in:

Journal of Communications Technology & Electronics, 2012, v. 57, n. 1, p. 101, doi. 10.1134/S1064226911090117

By:

Zakharov, A.

Publication type:

Article

Calculation of the mutual capacitance of nanoobjects.

Published in:

Journal of Communications Technology & Electronics, 2011, v. 56, n. 12, p. 1483, doi. 10.1134/S106422691111009X

By:

Gerasimov, Ya.;
Shorokhov, V.;
Maresov, A.;
Soldatov, E.;
Snigirev, O.

Publication type:

Article

Capacitance-Voltage Characteristics of Nanowire Trigate MOSFET Considering Wave Function Penetration.

Published in:

International Journal of Electrical & Computer Engineering (2088-8708), 2012, v. 2, n. 6, p. 785, doi. 10.11591/ijece.v2i6.1785

By:

Hossain, Md. Alamgir;
Mahmud, Arif;
Chowdhury, Mahfuzul Haque;
Rahman, Md. Mijanur

Publication type:

Article

Multichannel AlGaN/GaN Schottky Barrier Diode with Low Turn‐On Voltage and On‐Resistance.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 13, p. 1, doi. 10.1002/pssa.202200194

By:

Li, Ang;
Wang, Chong;
Zheng, Xuefeng;
Ma, Xiaohua;
He, Yunlong;
Liu, Kai;
Zhao, Yaopeng;
Hao, Yue

Publication type:

Article

Electrical Properties of Selectively Deposited Graphene‐Like Film on Silicon Oxide/Silicon Structures Preirradiated with Low Energy Electrons.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 3, p. 1, doi. 10.1002/pssa.202100208

By:

Knyazev, Maxim;
Sedlovets, Daria;
Soltanovich, Oleg;
Khodos, Igor;
Koveshnikov, Sergei

Publication type:

Article

Evaluating extrinsic origin of frequency dispersion of measured capacitance in high- k mixed stacks.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 10, p. n/a, doi. 10.1002/pssa.201700215

By:

Stojanovska‐Georgievska, Lihnida

Publication type:

Article

Interface passivation of liquid-phase crystallized silicon on glass studied with high-frequency capacitance-voltage measurements.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 7, p. 1697, doi. 10.1002/pssa.201532957

By:

Preissler, Natalie;
Töfflinger, Jan Amaru;
Shutsko, Ivan;
Gabriel, Onno;
Calnan, Sonya;
Stannowski, Bernd;
Rech, Bernd;
Schlatmann, Rutger

Publication type:

Article

Effect of alloying temperature on the capacitance-voltage and current-voltage characteristics of low-pressure chemical vapor deposition SiN x/n-GaN MIS structures.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 12, p. 2928, doi. 10.1002/pssa.201532395

By:

Ma, Xiaohua;
Liu, Ying;
Wang, Xinhua;
Huang, Sen;
Gao, Zhu;
Bao, Qilong;
Liu, Xinyu

Publication type:

Article

Using vertical capacitance-voltage measurements for fast on-wafer characterization of epitaxial GaN-on-Si material.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 12, p. 2897, doi. 10.1002/pssa.201532341

By:

Schuster, M.;
Wachowiak, A.;
Groh, L.;
Szabó, N.;
Merkel, U.;
Jahn, A.;
Mikolajick, T.

Publication type:

Article

Transport behaviour of boron delta-doped diamond.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 10, p. 2028, doi. 10.1002/pssa.201300093

By:

Scharpf, J.;
Denisenko, A.;
Pakes, C. I.;
Rubanov, S.;
Bergmaier, A.;
Dollinger, G.;
Pietzka, C.;
Kohn, E.

Publication type:

Article

Simulation and modeling of the influence of temperature on CdS/CdTe thin film solar cell.

Published in:

European Physical Journal - Applied Physics, 2019, v. 87, n. 3, p. 1, doi. 10.1051/epjap/2019190037

By:

Mekky, Abdel-baset H.

Publication type:

Article

Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts.

Published in:

European Physical Journal - Applied Physics, 2019, v. 85, n. 1, p. N.PAG, doi. 10.1051/epjap/2018180282

By:

Zhang, Teng;
Raynaud, Christophe;
Planson, Dominique

Publication type:

Article

Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode.

Published in:

European Physical Journal - Applied Physics, 2015, v. 72, n. 1, p. 10102-p1, doi. 10.1051/epjap/2015150140

By:

Rabehi, Abdelaziz;
Amrani, Mohamed;
Benamara, Zineb;
Akkal, Boudali;
Hatem-Kacha, Arslane;
Robert-Goumet, Christine;
Monier, Guillaume;
Gruzza, Bernard

Publication type:

Article

Development of a physically-based planar inductors VHDL-AMS model for integrated power converter design.

Published in:

European Physical Journal - Applied Physics, 2014, v. 66, n. 2, p. 00, doi. 10.1051/epjap/2014130430

By:

Ammouri, Aymen;
Ben Salah, Walid;
Khachroumi, Sofiane;
Ben Salah, Tarek;
Kourda, Ferid;
Morel, Hervé

Publication type:

Article

Measurement and numerical analysis of C-V characteristics for normally-on SiCED-JFET.

Published in:

European Physical Journal - Applied Physics, 2014, v. 66, n. 2, p. 00, doi. 10.1051/epjap/2014130533

By:

Ghedira, Sami;
Buttay, Cyril;
Morel, Hervé;
Besbes, Kamel

Publication type:

Article

Electrical and optical properties of annealed plasma-modified porous silicon.

Published in:

European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011100508

By:

Benyahia, Be.;
Gabouze, N.;
Tahi, H.;
Mahmoudi, Br.

Publication type:

Article

Effect of Firing Rates on Electrode Morphology and Electrical Properties of Multilayer Ceramic Capacitors.

Published in:

Journal of the American Ceramic Society, 2012, v. 95, n. 3, p. 992, doi. 10.1111/j.1551-2916.2011.04880.x

By:

Samantaray, M. M.;
Kaneda, K.;
Qu, W.;
Dickey, E. C.;
Randall, C. A.;
Davies, P. K.

Publication type:

Article

Effects of modulation doped n-AlGaN epilayers on the optoelectronic properties of 278-nm AlGaN-based flip-chip light-emitting devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 13, p. 12065, doi. 10.1007/s10854-019-01564-x

By:

Yang, Sipan;
Hu, Meiling;
Yin, Huan

Publication type:

Article

Study of gamma-ray radiation effects on the passivation properties of atomic layer deposited Al2O3 on silicon using deep-level transient spectroscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 2, p. 1148, doi. 10.1007/s10854-018-0383-4

By:

Chen, Zhe;
Dong, Peng;
Xie, Meng;
Li, Yun;
Yu, Xuegong;
Ma, Yao

Publication type:

Article

Physical and electrical characterization of yttrium-stabilized zirconia (YSZ) thin films deposited by sputtering and atomic-layer deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 18, p. 15349, doi. 10.1007/s10854-018-8909-3

By:

Molina-Reyes, Joel;
Tiznado, Hugo;
Soto, Gerardo;
Vargas-Bautista, Monica;
Dominguez, David;
Murillo, Eduardo;
Sweeney, Dan;
Read, John

Publication type:

Article

Effect of substrate temperature on electrical properties of (Al/p-CuSbS /Mo) Schottky diodes grown by vacuum thermal evaporation.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 12, p. 8733, doi. 10.1007/s10854-017-6598-y

By:

Nefzi, K.;
Rabhi, A.;
Kanzari, M.

Publication type:

Article

Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 12, p. 8844, doi. 10.1007/s10854-017-6613-3

By:

Tanrıkulu, E.;
Demirezen, S.;
Altındal, Ş.;
Uslu, İ.

Publication type:

Article

Frequency dependent electrical characteristics and origin of anomalous capacitance-voltage ( C-V) peak in Au/(graphene-doped PVA)/n-Si capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 11, p. 7819, doi. 10.1007/s10854-017-6478-5

By:

Yerişkin, S.;
Balbaşı, M.;
Orak, İ.

Publication type:

Article

Frequency dependent C-V and G/ω-V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 6, p. 4951, doi. 10.1007/s10854-016-6147-0

By:

Tan, S.;
Tecimer, H.;
Çiçek, O.;
Altındal, Ş

Publication type:

Article

Investigation of negative dielectric constant in Au/1 % graphene (GP) doped-CaPrCoO/n-Si structures at forward biases using impedance spectroscopy analysis.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 5, p. 3186, doi. 10.1007/s10854-015-2816-7

By:

Çetinkaya, H.;
Alialy, Sahar;
Altındal, Ş.;
Kaya, A.;
Uslu, İ.

Publication type:

Article

Photoelectrochemical studies on spray deposited copper selenide thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 7, p. 3096, doi. 10.1007/s10854-014-1989-9

By:

Yadav, Abhijit

Publication type:

Article

Preparation and dielectric properties of BaTiO-based X8R ceramics co-doped with BIT and CBS glass.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 1, p. 196, doi. 10.1007/s10854-012-0710-0

By:

Chen, Guo-hua;
Yang, Yun;
Kang, Xiao-ling;
Yuan, Chang-lai;
Zhou, Chang-rong

Publication type:

Article

Morphological, microstructural and electrical examinations on ZnO film on p-Si wafer.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 11, p. 1971, doi. 10.1007/s10854-012-0690-0

By:

Gokcen, M.;
Bal, S.;
Yildirim, G.;
Gulen, M.;
Varilci, A.

Publication type:

Article

Preparation and investigation of nanostructured SnO2:Pd/ porous silicon/c-Si heterostructure solar cell.

Published in:

Journal of Solid State Electrochemistry, 2021, v. 25, n. 3, p. 1039, doi. 10.1007/s10008-020-04889-4

By:

Ismail, Raid A.;
Abdul Majeed, Aseel M.

Publication type:

Article

Integration of electrochemical capacitance–voltage characteristics: a new procedure for obtaining free charge carrier depth distribution profiles with high resolution.

Published in:

Journal of Solid State Electrochemistry, 2021, v. 25, n. 3, p. 797, doi. 10.1007/s10008-020-04855-0

By:

Yakovlev, George;
Zubkov, Vasily

Publication type:

Article

Structure, Optical and Electrical Properties of Nb(Zn) Doped Sol–Gel ITO Films: Effect of Substrates and Dopants.

Published in:

Molecules, 2024, v. 29, n. 22, p. 5480, doi. 10.3390/molecules29225480

By:

Gartner, Mariuca;
Szekeres, Anna;
Simeonov, Simeon;
Covei, Maria;
Anastasescu, Mihai;
Preda, Silviu;
Calderon-Moreno, Jose Maria;
Predoana, Luminita;
Stroescu, Hermine;
Mitrea, Daiana;
Nicolescu, Madalina

Publication type:

Article

Understanding Performance Limitations of Cu(In,Ga)Se2 Solar Cells due to Metastable Defects—A Route toward Higher Efficiencies.

Published in:

Solar RRL, 2021, v. 5, n. 7, p. 1, doi. 10.1002/solr.202100063

By:

Weiss, Thomas Paul;
Ehre, Florian;
Serrano-Escalante, Valentina;
Wang, Taowen;
Siebentritt, Susanne

Publication type:

Article

The Potential Barrier and Thermal Stability Dependence on PI Thickness of Al/PI/c-Si Schottky Diode.

Published in:

Iraqi Journal of Science, 2020, v. 61, n. 12, p. 3235, doi. 10.24996/ijs.2020.61.12.12

By:

Rasheed, Hussein Kh.;
Kareem, Aseel A.

Publication type:

Article

Physical and Electrical Properties of Silicon Nitride Thin Films with Different Nitrogen–Oxygen Ratios.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 13, p. 958, doi. 10.3390/nano15130958

By:

Chen, Wen-Jie;
Liu, Yang-Chao;
Wang, Zhen-Yu;
Gu, Lin;
Shen, Yi;
Ma, Hong-Ping

Publication type:

Article

Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 20, p. 3626, doi. 10.3390/nano12203626

By:

Koveshnikov, Sergei;
Kononenko, Oleg;
Soltanovich, Oleg;
Kapitanova, Olesya;
Knyazev, Maxim;
Volkov, Vladimir;
Yakimov, Eugene

Publication type:

Article

Green Synthesis of Lead Sulphide Nanoparticles for High-Efficiency Perovskite Solar Cell Applications.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 11, p. 1933, doi. 10.3390/nano12111933

By:

Islam, Mohammad Aminul;
Sarkar, Dilip Kumar;
Shahinuzzaman, Md.;
Wahab, Yasmin Abdul;
Khandaker, Mayeen Uddin;
Tamam, Nissren;
Sulieman, Abdelmoneim;
Amin, Nowshad;
Akhtaruzzaman, Md.

Publication type:

Article

Memory Properties of Zr-Doped ZrO 2 MOS-like Capacitor.

Published in:

Coatings (2079-6412), 2022, v. 12, n. 9, p. N.PAG, doi. 10.3390/coatings12091369

By:

Palade, Catalin;
Slav, Adrian;
Stavarache, Ionel;
Maraloiu, Valentin Adrian;
Negrila, Catalin;
Ciurea, Magdalena Lidia

Publication type:

Article

Comparative Study on the Separate Extraction of Interface and Bulk Trap Densities in Indium Gallium Zinc Oxide Thin-Film Transistors Using Capacitance–Voltage and Current–Voltage Characteristics.

Published in:

Coatings (2079-6412), 2021, v. 11, n. 9, p. 1135, doi. 10.3390/coatings11091135

By:

Lee, Dong-Ho;
Kim, Dae-Hwan;
Jeong, Hwan-Seok;
Hwang, Seong-Hyun;
Lee, Sunhee;
Kim, Myeong-Ho;
Lim, Jun Hyung;
Kwon, Hyuck-In

Publication type:

Article

On the Role of Capacitance Determination Accuracy for the Electrical Characterization of Pulsed Driven Dielectric Barrier Discharges.

Published in:

Contributions to Plasma Physics, 2013, v. 53, n. 6, p. 469, doi. 10.1002/ctpp.201200126

By:

Pipa, A. V.;
Hoder, T.;
Brandenburg, R.

Publication type:

Article

Formation of a Fast Charge Transfer Channel in Quasi-2D Perovskite Solar Cells through External Electric Field Modulation.

Published in:

Energies (19961073), 2021, v. 14, n. 21, p. 7402, doi. 10.3390/en14217402

By:

Zhu, Xixiang;
Peng, Liping;
Li, Jinpeng;
Yu, Haomiao;
Xie, Yulin

Publication type:

Article