Works matching DE "BUFFER layers"

Results: 1185

Zn1−xMgxO film with adjustable properties fabricated by plasma-enhanced atomic layer deposition (PEALD).

Published in:

Applied Physics A: Materials Science & Processing, 2025, v. 131, n. 5, p. 1, doi. 10.1007/s00339-025-08499-7

By:

Chen, Xuyuan;
Zhao, Wenning;
Tan, Xiaohui;
Han, Xiuxun

Publication type:

Article

Avoiding Fill Factor Losses in Cu(In,Ga)Se2 as a Bottom Cell in a Tandem Structure.

Published in:

Progress in Photovoltaics, 2025, v. 33, n. 6, p. 669, doi. 10.1002/pip.3905

By:

Kanevce, Ana;
Paetel, Stefan;
Gutzler, Rico;
Bagrowski, Dominik;
Hariskos, Dimitrios;
Friedlmeier, Theresa Magorian

Publication type:

Article

Unusually High‐Density 2D Electron Gases in N‐Polar AlGaN/GaN Heterostructures with GaN/AlN Superlattice Back Barriers Grown on Sapphire Substrates.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 5, p. 1, doi. 10.1002/pssr.202400379

By:

Matys, Maciej;
Yamada, Atsushi;
Ohki, Toshihiro

Publication type:

Article

Effects of Pd- and Ta-buffer layer on magnetic and interfacial perpendicular properties of sputtered Co2FeSi/MgO heterostructures.

Published in:

Surface Engineering, 2021, v. 37, n. 4, p. 497, doi. 10.1080/02670844.2020.1789336

By:

Wang, Ke;
Tang, Yongming;
Xiao, Xiaopeng;
Liu, Jian

Publication type:

Article

Post annealing treatment of zinc sulphide thin film as a buffer layer for solar cell application.

Published in:

Surface Engineering, 2017, v. 33, n. 4, p. 299, doi. 10.1080/02670844.2016.1254978

By:

Vashistha, I. B.;
Sharma, M. C.;
Sharma, S. K.

Publication type:

Article

Fabrication of InN based photodetector using porous silicon buffer layer.

Published in:

Surface Engineering, 2013, v. 29, n. 10, p. 772, doi. 10.1179/1743294413Y.0000000189

By:

Amirhoseiny, M.;
Hassan, Z.;
Ng, S. S.

Publication type:

Article

Influence of chromium buffer layer on Cr/ta-C composite films.

Published in:

Surface Engineering, 2013, v. 29, n. 4, p. 276, doi. 10.1179/1743294412Y.0000000103

By:

Liu, Y;
Yu, X;
Ma, L;
Wang, C B;
Hua, M

Publication type:

Article

Graphene‐Molecule Hybridization at a Ferromagnetic Interface.

Published in:

Chemistry - A European Journal, 2024, v. 30, n. 55, p. 1, doi. 10.1002/chem.202400857

By:

Cojocariu, Iulia;
Perilli, Daniele;
Feyer, Vitaliy;
Jugovac, Matteo

Publication type:

Article

Amorphous TiO2 shells: an Essential Elastic Buffer Layer for High‐Performance Self‐Healing Eutectic GaSn Nano‐Droplet Room‐Temperature Liquid Metal Battery.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 64, p. 1, doi. 10.1002/chem.202301774

By:

Li, Lian;
Wang, Kaizhao;
Wang, Kaijun;
Chen, Tianyou;
Wang, Jing;
Deng, Zhongshan;
Chen, Qingming;
Zhang, Weijun;
Hu, Jin

Publication type:

Article

High-Performance, Air-Stable, Top-Gate, p-Channel WSe2 Field-Effect Transistor with Fluoropolymer Buffer Layer.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 46, p. 7208, doi. 10.1002/adfm.201502008

By:

Shokouh, Seyed Hossein Hosseini;
Jeon, Pyo Jin;
Pezeshki, Atiye;
Choi, Kyunghee;
Lee, Hee Sung;
Kim, Jin Sung;
Park, Eun Young;
Im, Seongil

Publication type:

Article

Boosting electron transport and reducing open-circuit voltage deficit of CIGS solar cells with Zn1−xMgxO buffer layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 35, p. 26434, doi. 10.1007/s10854-022-09323-1

By:

Liu, Yunfeng;
Yao, Yifeng;
Du, Qian;
Yang, Chunlei;
Li, Weimin;
Liu, YiMing;
Zhao, Chenchen;
Sun, Yun;
Liu, Wei

Publication type:

Article

Retraction Note to: Electrode buffer layers via networks of polythiophene/polyaniline bottlebrushes and carbon nanotubes in organic solar cells.

Published in:

2022

By:

Sorkhishams, Nafiseh;
Massoumi, Bakhshali;
Saraei, Mahnaz;
Agbolaghi, Samira

Publication type:

Correction Notice

Biaxially textured MgO buffer layer on flexible metal template for coated conductor.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 20, p. 16678, doi. 10.1007/s10854-022-08565-3

By:

Nie, Qiong;
Jiang, Jinghua;
Qu, Haizhou;
Cheng, Yue;
Wang, Shiyu;
Wang, Jintao;
Wang, Jing;
Yang, Bo;
Qing, Zhenjun;
Xue, Yan

Publication type:

Article

Strain engineering using La0.7Sr0.3MnO3 buffer layer for enhancing superconductivity in GdBa2Cu3O7−x films.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 18, p. 15272, doi. 10.1007/s10854-022-08453-w

By:

Oh, Jun-Yung;
Ko, Young-Jae;
Yang, Dong-Seok;
Jeong, Wanseop;
Kang, Byeongwon

Publication type:

Article

Synthesis of ZnS thin films using the spray pyrolysis technique.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 18, p. 15086, doi. 10.1007/s10854-022-08428-x

By:

Najim, Abdessamad;
Hartiti, Bouchaib;
Labrim, Hicham;
Fadili, Salah;
Ertuğrul, Mehmet;
Thevenin, Philippe

Publication type:

Article

Isopropanol solvent-treated MoS2 nanosheets from liquid phase exfoliation and their applications to solution-processed anode buffer layer of organic light-emitting diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 15, p. 12137, doi. 10.1007/s10854-022-08174-0

By:

Liu, Liming;
Li, Wanshu;
Zeng, Liya;
Wang, Yuehui;
Wang, Honghang;
Miao, Yu;
Wang, Lihui;
Lu, Zongliu;
Zhang, Xiaowen

Publication type:

Article

ZnS stacking order influence on the formation of Zn-poor and Zn-rich Cu2ZnSnS4 phase.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 15, p. 11989, doi. 10.1007/s10854-022-08160-6

By:

Zaki, Mohamed Yassine;
El Khouja, Outman;
Nouneh, Khalid;
Ebn Touhami, Mohamed;
Matei, Elena;
Azmi, Sara;
Rusu, Madalin Ion;
Grigorescu, Cristiana Eugenia Ana;
Briche, Samir;
Boutamart, Mustapha;
Badica, Petre;
Burdusel, Mihail;
Secu, Mihail;
Pintilie, Lucian;
Galca, Aurelian Catalin

Publication type:

Article

Structural, optical, and electrical characterization of spray-deposited Mg0.02Zn0.98Se thin film for buffer layer application.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 11, p. 8529, doi. 10.1007/s10854-021-06437-w

By:

Krishna, V. S. Ganesha;
Mahesha, M. G.

Publication type:

Article

(001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thickness.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 10, p. 7587, doi. 10.1007/s10854-022-07905-7

By:

Laifi, J.;
Bchetnia, A.

Publication type:

Article

Investigation of TiO2 as the buffer layer in wide bandgap chalcopyrite solar cells using SCAPS.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 9, p. 6253, doi. 10.1007/s10854-022-07799-5

By:

Liu, Xuhui;
Hu, Yong

Publication type:

Article

Design of hierarchical buffer structure for silicon/carbon composite as a high-performance Li-ion batteries anode.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 6, p. 3002, doi. 10.1007/s10854-021-07500-2

By:

Liu, Zetao;
Du, Juntao;
Jia, Huina;
Wang, Wenchao;
Zhang, Minxin;
Ma, Jiangkai;
Nie, Yi;
Liu, Tianqing;
Song, Kedong

Publication type:

Article

Synthesis of CdZnS buffer layer and its impact on Cu2ZnSn(S, Se)4 thin film solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 5, p. 2399, doi. 10.1007/s10854-021-07446-5

By:

Zhang, Xuqiang;
Chen, Jiangtao;
Chen, Jianbiao;
Ge, Lin;
Li, Yan;
Zhao, Yun;
Wang, Chengwei

Publication type:

Article

High-performance a-IGZO-based flexible TTFT with stacked dielectric layers via ultrathin high-κ SrTiO3 buffer layer grown on HfO2.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 3, p. 1511, doi. 10.1007/s10854-021-07662-z

By:

Ozer, Caglar;
Ebeoglugil, M. Faruk;
Yildirim, Serdar;
Nil, Metin

Publication type:

Article

Analysis of different vacuum annealing levels for ZnSe thin films as potential buffer layer for solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 1, p. 139, doi. 10.1007/s10854-021-07280-9

By:

Chasta, Gaurav;
Himanshu;
Patel, S. L.;
Chander, S.;
Kannan, M. D.;
Dhaka, M. S.

Publication type:

Article

Investigation of BiFeO3/HfO2 gate stack for ferroelectric field effect transistors in IOT applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 17, p. 22517, doi. 10.1007/s10854-021-06737-1

By:

Tripathi, Pramod Narayan;
Ojha, Sanjeev Kumar;
Jha, Rajesh Kumar;
Nazarov, Alexey

Publication type:

Article

Growth of continuous GaN films on ZnO buffer layer by chemical vapor deposition for ultraviolet photodetector.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 16, p. 21012, doi. 10.1007/s10854-021-06577-z

By:

Liu, Rui;
Si, Jiawei;
Lv, Qipu;
Xiao, Cancheng;
Di, Ziye;
Zhao, Lei;
Wang, Liancheng;
Zhang, Lei

Publication type:

Article

Facile synthesis and comprehensive characterization of Ni-decorated amine groups-immobilized Fe3O4@SiO2 magnetic nanoparticles having enhanced solar cell efficiency.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 13, p. 18192, doi. 10.1007/s10854-021-06361-z

By:

Ece, Mehmet Şakir;
Ekinci, Arzu;
Kutluay, Sinan;
Şahin, Ömer;
Horoz, Sabit

Publication type:

Article

Studying the role of ZnO nanostructure photoanodes for improving the photovoltaic performance of CdSe QDSSCs.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 13, p. 17837, doi. 10.1007/s10854-021-06319-1

By:

Ramya, M.;
Nideep, T. K.;
Nampoori, V. P. N.;
Kailasnath, M.

Publication type:

Article

Polypyrrole-coated Mn–Fe bimetallic oxides as high stability anode for lithium-ion batteries.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 11, p. 15190, doi. 10.1007/s10854-021-06071-6

By:

Fang, Yuan;
Li, Tengfei;
Wang, Fen;
Zhu, Jianfeng

Publication type:

Article

Effect of employing chromium as a buffer layer on the crystallinity of hexagonal boron nitride films grown by LPCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 10, p. 13961, doi. 10.1007/s10854-021-05972-w

By:

Chen, Xi;
Luan, Kairan;
Zhang, Wenbo;
Liu, Xiuhuan;
Zhao, Jihong;
Hou, Lixin;
Gao, Yanjun;
Song, Junfeng;
Chen, Zhanguo

Publication type:

Article

Enhanced ferroelectric and dielectric behaviors of PZT/BFO heterostructure via compositional development.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 7, p. 8185, doi. 10.1007/s10854-020-05024-9

By:

Yan, Chao;
Liu, Xiaofang;
Sun, Huajun;
Sui, Huiting;
Wang, Ye

Publication type:

Article

Thin oxide buffer layers for avoiding leaks in CIGS solar cells; a theoretical analysis.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 6, p. 7598, doi. 10.1007/s10854-021-05476-7

By:

Ghamsari-Yazdel, Fatemeh;
Gharibshahian, Iman;
Sharbati, Samaneh

Publication type:

Article

Strengthened magnetoelectric coupling in Pb(Zr0.52Ti0.48)O3/Ni composite through interface modification with LaNiO3 buffer layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 5, p. 5920, doi. 10.1007/s10854-021-05312-y

By:

Wang, Ao-pei;
Song, Guangxin;
Zhou, Fang-ping;
Zhao, Li-Na;
Jin, Ming;
Liu, Mei;
Zhang, Yong;
Hu, Ling-long;
Qi, Ji;
Xu, Hang;
Feng, Ming

Publication type:

Article

Ferroelectric and dielectric properties of BF-PT/LNO thin films on different substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 3, p. 3334, doi. 10.1007/s10854-020-05081-0

By:

Wang, Hao;
Zhai, Jian;
Lu, Wenhui;
Chen, Jianguo;
Cheng, Jinrong

Publication type:

Article

Improved resistive switching performance of graphene oxide-based flexible ReRAM with HfOx buffer layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 3, p. 2936, doi. 10.1007/s10854-020-05045-4

By:

Maji, S.;
Paul, A. D.;
Das, P.;
Chatterjee, S.;
Chatterjee, P.;
Dhanak, V. R.;
Chakraborty, A. K.;
Mahapatra, R.

Publication type:

Article

Improvement of CIGS solar cell efficiency with graded bandgap absorber layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 2, p. 2041, doi. 10.1007/s10854-020-04971-7

By:

Panahi, Seyed Reza Fatemi Shariat;
Abbasi, Abdollah;
Ghods, Vahid;
Amirahmadi, Meysam

Publication type:

Article

Improved electrical properties of sputtering Pb1.10(Zr0.52,Ti0.48)O3/Pb1.25(Zr0.52,Ti0.48)O3 multilayer thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 23, p. 21661, doi. 10.1007/s10854-020-04679-8

By:

Li, Biao;
Wang, Xing;
Li, Kehong;
Wan, Yingze;
Zhang, Shuai;
Yang, Zhifeng;
Meng, Lingfeng;
Zou, Helin

Publication type:

Article

Integrated flexible piezoresistive pressure sensor based on CB/CNTs/SR composite with SR buffer layer for wide sensing range.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 23, p. 21557, doi. 10.1007/s10854-020-04669-w

By:

Wang, Yue;
Zhang, Jishan;
Wang, Yun;
Guo, Xiaohui;
Liang, Yuefang

Publication type:

Article

Influence of Al pre-deposition time on AlGaN/GaN heterostructures grown on sapphire substrate by metal organic chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 17, p. 14737, doi. 10.1007/s10854-020-04037-8

By:

Liu, Chuanyang;
Wang, Jia;
Shen, Yiming;
Du, Lin;
Zhang, Yachao;
Xu, Shengrui;
Jiang, Li;
Zhang, Jincheng;
Hao, Yue

Publication type:

Article

Effect of Ba(Mg1/3Nb2/3)O3 buffer layer on electrical properties of PZT-based films.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 12, p. 9928, doi. 10.1007/s10854-020-03538-w

By:

Shao, Yajie;
Zhou, Jing;
Chen, Wen;
Shen, Jie;
Wang, Zhiqing

Publication type:

Article

Comparative studies of CdS thin films by chemical bath deposition techniques as a buffer layer for solar cell applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 10, p. 7499, doi. 10.1007/s10854-020-03024-3

By:

Ashok, A.;
Regmi, G.;
Romero-Núñez, A.;
Solis-López, M.;
Velumani, S.;
Castaneda, H.

Publication type:

Article

Polymer-assisted chemical solution deposition of high-quality La2Zr2O7 buffer layer applied to low-cost YBCO-coated conductors.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 7, p. 5617, doi. 10.1007/s10854-020-03128-w

By:

Li, Heng;
Zhang, Xin;
Xia, Yudong;
Pan, Xifeng;
Peng, Jinfang;
Cheng, C. H.;
Zhao, Yong

Publication type:

Article

Towards an ink-based method for the deposition of ZnxCd1-xS buffer layers in CZTS solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 3, p. 2575, doi. 10.1007/s10854-019-02796-7

By:

Congiu, Mirko;
Bonomo, Matteo;
di Girolamo, Diego;
Graeff, Carlos F. O.;
Malerba, Claudia;
Valentini, Matteo;
Mittiga, Alberto;
Dini, Danilo

Publication type:

Article

Effect of low-valence vanadium buffer layer on the properties of vanadium oxide film.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 2, p. 1715, doi. 10.1007/s10854-019-02689-9

By:

Xiang, Zihao;
Wu, Zhiming;
Zhang, Fan;
Ji, Chunhui;
Shi, Yuanlin;
Dai, Jinhong;
Huang, Zhangying;
Xu, Wen;
Dong, Xiang;
Jiang, Yadong

Publication type:

Article

Effects of the buffer layer on piezoelectric and ferroelectric properties of PMN-PT film-on-Ni foil composites.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 1, p. 677, doi. 10.1007/s10854-019-02574-5

By:

Wang, Jing;
Shen, Bowen;
Zhu, Kongjun;
Qiu, Jinhao

Publication type:

Article

Remarkably improved uniform bipolar-resistive switching performance with a NiO buffer layer in Bi2SiO5 thin-film memory devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 24, p. 21477, doi. 10.1007/s10854-019-02530-3

By:

Chen, Ruqi;
Hu, Wei;
Hao, Aize;
Bao, Dinghua

Publication type:

Article

Electrode buffer layers via networks of polythiophene/polyaniline bottlebrushes and carbon nanotubes in organic solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 24, p. 21117, doi. 10.1007/s10854-019-02482-8

By:

Sorkhishams, Nafiseh;
Massoumi, Bakhshali;
Saraei, Mahnaz;
Agbolaghi, Samira

Publication type:

Article

Electrical, optical and structural properties of silver-based multilayer films deposited by magnetron sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 20, p. 18519, doi. 10.1007/s10854-019-02205-z

By:

Gumrukcu, Ali Emre;
Kaplan, Hakki;
Akin Sonmez, Nihan;
Ozcelik, Suleyman

Publication type:

Article

Structure and properties of Ta/Al/Ta and Ti/Al/Ti/Au multilayer metal stacks formed as ohmic contacts on n-GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 19, p. 18144, doi. 10.1007/s10854-019-02167-2

By:

Boturchuk, Ievgen;
Walter, Thomas;
Julsgaard, Brian;
Khatibi, Golta;
Schwarz, Sabine;
Stöger-Pollach, Michael;
Pedersen, Kjeld;
Popok, Vladimir N.

Publication type:

Article

Effect of metal buffer layer on the thermal interface performance of liquid metal alloy on copper plate.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 16, p. 15766, doi. 10.1007/s10854-019-01962-1

By:

Yan, Huilong;
Ji, Yulong;
Yan, Jinliang

Publication type:

Article