Works matching DE "BIPOLAR transistors"

Results: 551

Nondestructive and accurate prediction of IGBT junction temperature in wind power converters: based on IDMOA-ELM prediction method.

Published in:

Nondestructive Testing & Evaluation, 2025, v. 40, n. 6, p. 2369, doi. 10.1080/10589759.2024.2378908

By:

Jiaqi, Liu;
Li, Lingling;
Liu, Yuwei

Publication type:

Article

基于退化相似性的变应力工况下 IGBT 寿命预测方法.

Published in:

Electric Machines & Control / Dianji Yu Kongzhi Xuebao, 2025, v. 29, n. 2, p. 105, doi. 10.15938/j.emc.2025.02.011

By:

仇志杰;
郑丹;
范涛;
温旭辉

Publication type:

Article

A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part II: Approaches Based on Intersection Points.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 9, p. 1743, doi. 10.3390/electronics14091743

By:

d'Alessandro, Vincenzo;
Catalano, Antonio Pio;
Scognamillo, Ciro

Publication type:

Article

A Novel Darlington Structure Power Switch Using a Vacuum Field Emission Transistor.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 9, p. 1737, doi. 10.3390/electronics14091737

By:

Ding, Yulong;
Ke, Yanlin;
She, Juncong;
Zhang, Yu;
Deng, Shaozhi

Publication type:

Article

Ccd-controlled in situ interferometry for dry etch process monitoring.

Published in:

Solid State Technology, 2001, v. 44, n. 6, p. 117

By:

John, Wilfred;
Weixelbaum, Leonhard;
Witrich, Harald;
Wurfl, Joachim

Publication type:

Article

Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 10, p. n/a, doi. 10.1002/adfm.201604811

By:

Pan, Chengbin;
Ji, Yanfeng;
Xiao, Na;
Hui, Fei;
Tang, Kechao;
Guo, Yuzheng;
Xie, Xiaoming;
Puglisi, Francesco M.;
Larcher, Luca;
Miranda, Enrique;
Jiang, Lanlan;
Shi, Yuanyuan;
Valov, Ilia;
McIntyre, Paul C.;
Waser, Rainer;
Lanza, Mario

Publication type:

Article

Multifunctional WSe2/SnSe2/WSe2 van der Waals heterostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 15, p. 11841, doi. 10.1007/s10854-022-08147-3

By:

Abderrahmane, Abdelkader;
Woo, Changlim;
Ko, Pil Ju

Publication type:

Article

Effect of silicidation on silicon-based thin film resistors in SiGe integrated circuits.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 4, p. 354, doi. 10.1007/s10854-008-9733-y

By:

Sang-Heung Lee;
Seung-Yun Lee;
Chan Woo Park;
Dongwoo Suh

Publication type:

Article

Double-polysilicon self-aligned lateral bipolar transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 183, doi. 10.1007/s10854-007-9300-y

By:

Pengpad, P.;
Bagnall, D. M.

Publication type:

Article

Cost-optimized switched reluctance motor drive with bipolar currents.

Published in:

Electrical Engineering, 2007, v. 89, n. 3, p. 183, doi. 10.1007/s00202-005-0336-9

By:

Zeljko Grbo;
Slobodan Vukosavic

Publication type:

Article

A STUDY ON TRANSIT TIME FLUCTUATION, AND CORRELATION BETWEEN LOW FREQUENCY PHASE AND CURRENT OR AMPLITUDE NOISES IN A TRANSISTOR.

Published in:

Fluctuation & Noise Letters, 2007, v. 7, n. 4, p. C69, doi. 10.1142/S0219477507004136

By:

Takagi, K.

Publication type:

Article

分布式IGBT 整流器在汽车涂装电泳生产线中的应用.

Published in:

Electroplating & Finishing, 2022, v. 41, n. 14, p. 1014, doi. 10.19289/j.1004-227x.2022.14.010

By:

陈水平;
李飞;
卜洪涛;
付长宇;
刘洪涛;
刘斌;
刘杰

Publication type:

Article

Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors.

Published in:

Active & Passive Electronic Components, 2011, p. 1, doi. 10.1155/2011/895247

By:

Nagy, Agnes;
Polanco, Alicia;
Alvarez, Manuel

Publication type:

Article

A current-mode logarithmic function circuit.

Published in:

Active & Passive Electronic Components, 2004, v. 27, n. 3, p. 183, doi. 10.1080/08827510310001648988

By:

Muhammad Taher Abuelma'Atti;
Osama Oglah Faris

Publication type:

Article

Junction parameter extraction for electronic device characterization.

Published in:

Active & Passive Electronic Components, 2004, v. 27, n. 2, p. 61, doi. 10.1080/1042015031000073805

By:

S. Dib;
Salame, C.;
Toufik, N.;
Khoury, A.;
Péelanchon, F.;
Mialhe, P.

Publication type:

Article

Simulation of a novel bipolar-FET Type-S, negative resistance circuit.

Published in:

Active & Passive Electronic Components, 2003, v. 26, n. 3, p. 129, doi. 10.1080/08827510310001603393

By:

Kumar, Umesh

Publication type:

Article

MOCVD-GROWN InGaP/GaAs EMITTER DELTA DOPING HETEROJUNCTION BIPOLAR TRANSISTORS.

Published in:

Active & Passive Electronic Components, 2002, v. 25, n. 3, p. 239, doi. 10.1080/08827510213499

By:

Yarn, K.F.

Publication type:

Article

Remaining useful life estimation for thermally aged power insulated gate bipolar transistors based on a modified maximum likelihood estimator.

Published in:

International Transactions on Electrical Energy Systems, 2020, v. 30, n. 6, p. 1, doi. 10.1002/2050-7038.12358

By:

Ismail, Adla;
Saidi, Lotfi;
Sayadi, Mounir;
Benbouzid, Mohamed

Publication type:

Article

A fundamental approach to applying an insulated-gate bipolar transistor to current interruption in a low-voltage direct current delivery system.

Published in:

International Transactions on Electrical Energy Systems, 2014, v. 24, n. 12, p. 1805, doi. 10.1002/etep.1830

By:

Yokomizu, Yasunobu;
Hayase, Tetsuo;
Meguro, Yoshikazu;
Matsumura, Toshiro

Publication type:

Article

A 2.41 ppm/°C bandgap voltage reference with second‐order curvature compensation.

Published in:

International Journal of Circuit Theory & Applications, 2024, v. 52, n. 11, p. 5539, doi. 10.1002/cta.4021

By:

Jia, Shichao;
Ye, Tianchun;
Xiao, Shimao

Publication type:

Article

A bipolar junction transistor EMC modeling method based on physical characteristic measurement and simplex optimization.

Published in:

International Journal of Circuit Theory & Applications, 2024, v. 52, n. 2, p. 551, doi. 10.1002/cta.3797

By:

Pan, Zeyu;
Zhang, Yu;
Ren, Dan;
Yang, Jinsheng;
Nie, Bao‐Lin;
Du, Pingan

Publication type:

Article

Novel resonator providing class‐F oscillation with better performance compared with available alternatives.

Published in:: International Journal of Circuit Theory & Applications, 2021, v. 49, n. 10, p. 3466, doi. 10.1002/cta.3120
Publication type:: Article

Suppressing derivatives of selected variables in Verilog‐A.

Published in:

International Journal of Circuit Theory & Applications, 2019, v. 47, n. 5, p. 805, doi. 10.1002/cta.2625

By:

Huszka, Zoltan;
Molnar, Kund

Publication type:

Article

Series‐type charger with output voltage automatically regulated and hot swap.

Published in:

International Journal of Circuit Theory & Applications, 2019, v. 47, n. 4, p. 633, doi. 10.1002/cta.2597

By:

Hwu, Kuo‐Ing;
Liu, Hsiu‐Pang

Publication type:

Article

Editorial.

Published in:

2024

By:

Male, Sally A.

Publication type:

Editorial

Development of the Bipolar Junction Transistor Diagnostic Test (BJTDT) to explore the second-year undergraduate Myanmar electronic and Thai electrical engineering students' understanding of BJT working principles and applications.

Published in:

Australasian Journal of Engineering Education, 2024, v. 29, n. 1, p. 66, doi. 10.1080/22054952.2024.2347792

By:

Khin, Myat Noe;
Nopparatjamjomras, Suchai;
Chittaree, Ratchapak;
Nopparatjamjomras, Thasaneeya Ratanaroutai

Publication type:

Article

Preface.

Published in:: International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S012915641602002X
Publication type:: Article

High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors.

Published in:

International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S0129156416400115

By:

Coquillat, D.;
Nodjiadjim, V.;
Blin, S.;
Konczykowska, A.;
Dyakonova, N.;
Consejo, C.;
Nouvel, P.;
Pènarier, A.;
Torres, J.;
But, D.;
Ruffenach, S.;
Teppe, F.;
Riet, M.;
Muraviev, A.;
Gutin, A.;
Shur, M.;
Knap, W.

Publication type:

Article

A NEW APPROACH TO CHARACTERIZE AND PREDICT LIFETIME OF DEEP-SUBMICRON NMOS DEVICES.

Published in:

International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 1, p. 315, doi. 10.1142/S0129156406003667

By:

CUI, ZHI;
LIOU, JUIN J.;
YUE, YUN;
WONG, HEI

Publication type:

Article

40 Gb/s TDM SYSTEM TRANSCEIVER PROTOTYPE IN InP HBT TECHNOLOGY.

Published in:

International Journal of High Speed Electronics & Systems, 2005, v. 15, n. 3, p. 643, doi. 10.1142/S0129156405003375

By:

KRISHNAMURTHY, KARTHIKEYAN;
XU, JIAN;
SHOU, XIAOQIANG;
VETURY, RAMAKRISHNA;
JAGANATHAN, SHRINIVASAN;
LIU, YET-ZEN;
PULLELA, RAJA;
YU, RUAI;
RODWELL, MARK J. W.

Publication type:

Article

RECENT PROGRESS IN 40- TO 100-GBIT/S-CLASS OPTICAL COMMUNICATIONS ICS USING INP-BASED HBT TECHNOLOGIES.

Published in:

International Journal of High Speed Electronics & Systems, 2005, v. 15, n. 3, p. 615, doi. 10.1142/S0129156405003363

By:

ISHII, Kiyoshi;
NOSAKA, Hideyuki;
SANO, Kimikazu;
IDA, Minoru;
KURISHIMA, Kenji;
SHIBATA, Tsugumichi;
ENOKI, Takatomo

Publication type:

Article

ANALYSIS OF GaN HBT STRUCTURES FOR HIGH POWER, HIGH EFFICIENCY MICROWAVE AMPLIFIERS.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 207, doi. 10.1142/S0129156404002910

By:

Keogh, D. M.;
J. C. Li;
Conway, A. M.;
Qiao, D.;
Raychaudhuri, S.;
Asbeck, P. M.;
Dupuis, R. D.;
Feng, M.

Publication type:

Article

TEMPERATURE DEPENDENT I-V CHARACTERISTICS OF AlGaN/GaN HBTS AND GaN BJTS.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 195, doi. 10.1142/S0129156404002892

By:

Xing, Huili G.;
Mishra, Umesh K.

Publication type:

Article

TUNNEL DIODE/TRANSISTOR DIFFERENTIAL COMPARATOR.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 16, doi. 10.1142/S0129156404002600

By:

Liu, Qingmin;
Sutar, Surajit;
Seabaugh, Alan

Publication type:

Article

VERTICAL SCALING OF TYPE I InP HBT WITH FT > 500 GHZ.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 1

By:

Lal, J.W.;
Hafez, W.;
Feng, M.

Publication type:

Article

TOTAL-DOSE AND SINGLE-EVENT EFFECTS IN SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 2, p. 489, doi. 10.1142/S0129156404002478

By:

Cressler, John D.

Publication type:

Article

GAIN DEGRADATION AND ENHANCED LOW-DOSE-RATE SENSITIVITY IN BIPOLAR JUNCTION TRANSISTORS.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 2, p. 503, doi. 10.1142/S012915640400248X

By:

Schrimpf, R. D.

Publication type:

Article

n-AlGaAs/p-GaAs/n-GaN HETEROJUNCTION BIPOLAR TRANSISTOR:: THE FIRST TRANSISTOR FORMED VIA WAFER FUSION.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 265, doi. 10.1142/S0129156404002338

By:

Estrada, Sarah;
Hu, Evelyn;
Mishra, Umesh

Publication type:

Article

A SiGe HBT CHIPSET for 40-Gb/s OPTICAL TRANSMISSION SYSTEMS.

Published in:

International Journal of High Speed Electronics & Systems, 2003, v. 13, n. 1, p. 239, doi. 10.1142/S0129156403001594

By:

Masuda, T.;
Shiramizu, N.;
Ohue, E.;
Oda, K.;
Hayami, R.;
Kondo, M.;
Onai, T.;
Washio, K.;
Ohhata, K.;
Arakawa, F.;
Tanabe, M.;
Shimamoto, H.;
Harada, T.

Publication type:

Article

HIGH-SPEED, LOW-POWER DIGITAL AND ANALOG CIRCUITS IMPLEMENTED IN IBM SiGe BiCMOS TECHNOLOGY.

Published in:

International Journal of High Speed Electronics & Systems, 2003, v. 13, n. 1, p. 221, doi. 10.1142/S0129156403001582

By:

Fritz, Karl E.;
Randall, Barbara A.;
Fokken, Gregg J.;
Degerstrom, Michael J.;
Lorsung, Michael J.;
Prairie, Jason F.;
Amundsen, Eric L.H.;
Schreiber, Shaun M.;
Gilbert, Barry K.;
Greenberg, David R.;
Joseph, Alvin

Publication type:

Article

INTEGRATED SiGe AND Si DEVICE CAPABILITIES AND TRENDS FOR MULTI-GIGAHERTZ APPLICATIONS.

Published in:

International Journal of High Speed Electronics & Systems, 2003, v. 13, n. 1, p. 175, doi. 10.1142/S0129156403001570

By:

Freeman, G.G.;
Jagannathan, B.;
Zamdmer, N.;
Groves, R.;
Singh, R.;
Tretiakov, Y.;
Kumar, M.;
Johnson, J.B.;
Plouchart, J.O.;
Greenberg, D.R.;
Koester, S.J.;
Schaub, J.D.

Publication type:

Article

PRESENT AND FUTURE OF HIGH-SPEED COMPOUND SEMICONDUCTOR IC's.

Published in:

International Journal of High Speed Electronics & Systems, 2003, v. 13, n. 1, p. 1, doi. 10.1142/S0129156403001508

By:

Otsuji, Taiichi

Publication type:

Article

High-Performance Si and SiGe Bipolar Technologies and Circuits.

Published in:

International Journal of High Speed Electronics & Systems, 2001, v. 11, n. 1, p. 35, doi. 10.1142/S0129156401000782

By:

Wurzer, Martin;
Meister, Thomas F.;
Böck, Josef;
Schäfer, Herbert;
Aufinger, Klaus;
Boguth, Sabine;
Knapp, Herbert;
Rest, Mirjana;
Schreiter, Renate;
Treitinger, Ludwig

Publication type:

Article

Self-Aligned Si BJT/SiGe HBT Technology and its Application to High-Speed Circuits.

Published in:

International Journal of High Speed Electronics & Systems, 2001, v. 11, n. 1, p. 77, doi. 10.1142/S0129156401000794

By:

Washio, Katsuyoshi

Publication type:

Article

Small-Scale InGaP/GaAs Heterojunction Bipolar Transistors for High-Speed and Low-Power Integrated-Circuit Applications.

Published in:

International Journal of High Speed Electronics & Systems, 2001, v. 11, n. 1, p. 115, doi. 10.1142/S0129156401000800

By:

Oka, Tohru;
Hirata, Koji;
Suzuki, Hideyuki;
Ouchi, Kiyoshi;
Uchiyama, Hiroyuki;
Taniguchi, Takafumi;
Mochizuki, Kazuhiro;
Nakamura, Tohru

Publication type:

Article

Scaling of InGaAs/InAl As HBTs for High Speed Mixed-Signal and mm-Wave ICs.

Published in:

International Journal of High Speed Electronics & Systems, 2001, v. 11, n. 1, p. 159, doi. 10.1142/S0129156401000824

By:

Rodwell, M. J. W.;
Urteaga, M.;
Betser, Y.;
Mathew, T.;
Krishnan, P.;
Scott, D.;
Jaganathan, S.;
Mensa, D.;
Guthrie, J.;
Pullela, R.;
Lee, Q.;
Agarwal, B.;
Bhattacharya, U.;
Long, S.;
Martin, S. C.;
Smith, R. P.

Publication type:

Article

Progress Toward 100 GHz Logic in InP HBT IC Technology.

Published in:

International Journal of High Speed Electronics & Systems, 2001, v. 11, n. 1, p. 217, doi. 10.1142/S0129156401000836

By:

Fields, C. H.;
Sokolich, M.;
Thomas, S.;
Elliot, K.;
Jensen, J.

Publication type:

Article

Cantilevered Base InP DHBT for High Speed Digital Applications.

Published in:

International Journal of High Speed Electronics & Systems, 2001, v. 11, n. 1, p. 245, doi. 10.1142/S0129156401000848

By:

Gutierrez-Aitken, Augusto L.;
Kaneshiro, Eric N.;
Matsui, James H.;
Sawdai, Donald J.;
Notthoff, Johannes K.;
Chin, Patrick T.;
Oki, Aaron K.

Publication type:

Article

LOCAL DOPING AND OPTIMAL ANNEALING OF A MESH MULTILAYER STRUCTURE TO DECREASE THE SPATIAL DIMENSIONS OF INTEGRATED p–n-JUNCTIONS.

Published in:

NANO (1793-2920), 2009, v. 4, n. 5, p. 303, doi. 10.1142/S179329200900185X

By:

PANKRATOV, E. L.

Publication type:

Article

Modeling of Manufacturing Processes in EPIC Technology.

Published in:

Electronics & Electrical Engineering, 2008, n. 87, p. 49

By:

Kašauskas, V.;
Anilionis, R.;
Eidukas, D.

Publication type:

Article