Works matching DE "BIPOLAR integrated circuits"

Results: 92

One-Step All-Solution-Based Au-GO Core-Shell Nanosphere Active Layers in Nonvolatile ReRAM Devices.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 10, p. n/a, doi. 10.1002/adfm.201604604

By:

Rani, Adila;
Velusamy, Dhinesh Babu;
Marques Mota, Filipe;
Jang, Yoon Hee;
Kim, Richard Hahnkee;
Park, Cheolmin;
Kim, Dong Ha

Publication type:

Article

Optical code division multiple access secure communications systems with rapid reconfigurable polarization shift key user code.

Published in:

Optical Engineering, 2015, v. 54, n. 9, p. 1, doi. 10.1117/1.OE.54.9.096101

By:

Kaiqiang Gao;
Chongqing Wu;
Xinzhi Sheng;
Chao Shang;
Lanlan Liu;
Jian Wang

Publication type:

Article

Analysis of a balanced analog multiplier for an arbitrary number of signed inputs.

Published in:

International Journal of Circuit Theory & Applications, 2017, v. 45, n. 4, p. 483, doi. 10.1002/cta.2243

By:

Hong, Brian;
Hajimiri, Ali

Publication type:

Article

From soft constraints to bipolar preferences: modelling framework and solving issues.

Published in:

Journal of Experimental & Theoretical Artificial Intelligence, 2010, v. 22, n. 2, p. 135, doi. 10.1080/09528130903010212

By:

Bistarelli, Stefano;
Pini, Maria Silvia;
Rossi, Francesca;
Venable, K. Brent

Publication type:

Article

Reversing the polarity of bipolar stimulation in deep brain stimulation for essential tremor: A theoretical explanation for a useful clinical intervention.

Published in:

Neurocase (Taylor & Francis Ltd), 2014, v. 20, n. 1/2, p. 10, doi. 10.1080/13554794.2012.713495

By:

Yousif, Nada;
Pavese, Nicola;
Naushahi, Mohammad J.;
Nandi, Dipankar;
Bain, Peter G.

Publication type:

Article

GRADED-GaAs1-XPX BASES IN HETEROJUNCTION BIPOLAR TRANSISTORS WITH InGaP EMITTERS.

Published in:

Microwave & Optical Technology Letters, 1996, v. 11, n. 3, p. 150, doi. 10.1002/(SICI)1098-2760(19960220)11:3<150::AID-MOP11>3.0.CO;2-F

By:

Ohkubo, Michio;
Ikeda, Nariaki;
Ninomiya, Takao

Publication type:

Article

POWER-GAIN AND fmax EQUATIONS BASED ON THE T EQUIVALENT CIRCUIT OF HIGH-FREQUENCY BIPOLAR TRANSISTORS.

Published in:

Microwave & Optical Technology Letters, 1994, v. 7, n. 16, p. 767, doi. 10.1002/mop.4650071614

By:

Youngseok Seo;
Kim, Bumman

Publication type:

Article

Spectral sensitivity of a differential photodiode in a bipolar integrated circuit.

Published in:

Journal of Applied Spectroscopy, 2013, v. 80, n. 3, p. 473, doi. 10.1007/s10812-013-9790-8

By:

Blynski, V.;
Holub, E.;
Lemeshevskaya, A.

Publication type:

Article

Effect of preliminary annealing of silicon substrates on the spectral sensitivity of photodetectors in bipolar integrated circuits.

Published in:

Journal of Applied Spectroscopy, 2010, v. 77, n. 3, p. 445, doi. 10.1007/s10812-010-9353-1

By:

Blynskii, V. I.;
Bozhatkin, O. A.;
Golub, E. S.;
Lemeshevskaya, A. M.;
Shvedov, S. V.

Publication type:

Article

Spectral sensitivity of IR photodetectors in monolithic bipolar integrated circuits.

Published in:

Journal of Applied Spectroscopy, 2008, v. 75, n. 4, p. 608, doi. 10.1007/s10812-008-9089-3

By:

Blynskii, V. I.;
Emel'yanov, V. A.;
Golub, E. S.;
Lemeshevskaya, A. M.;
Shvedov, S. V.

Publication type:

Article

Bipolar-CMOS-DMOS Process-Based a Robust and High-Accuracy Low Drop-Out Regulator.

Published in:

Telkomnika, 2014, v. 12, n. 2, p. 283, doi. 10.12928/telkomnika.v12i2.52

By:

Pan Luwei;
Zhou Li;
Sun Tao

Publication type:

Article

Light Emitting Devices in Si CMOS and RF Bipolar Integrated Circuits.

Published in:

Leukos, 2016, v. 12, n. 4, p. 203, doi. 10.1080/15502724.2015.1134333

By:

Xu, Kaikai;
Ogudo, Kingsley A.;
Polleux, Jean-Luc;
Viana, Carlos;
Ma, Zhengfei;
Li, Zebin;
Yu, Qi;
Li, Guannpyng;
Snyman, Lukas W.

Publication type:

Article

Electric field with bipolar structure during magnetic reconnection without a guide field.

Published in:

Astrophysics & Space Science, 2014, v. 351, n. 1, p. 159, doi. 10.1007/s10509-014-1813-2

By:

Guo, Jun

Publication type:

Article

Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2005, v. 15, n. 2, p. 203, doi. 10.1002/mmce.20069

By:

Taher, H.;
Schreurs, D.;
Nauwelaers, B.

Publication type:

Article

A low-loss snubber for reducing motor terminal surge voltage.

Published in:

Electrical Engineering in Japan, 2005, v. 150, n. 4, p. 64, doi. 10.1002/eej.10378

By:

Kon, Hironobu

Publication type:

Article

DYNAMIC PULSE INTEGRATING CIRCUIT FOR INFRARED RECEIVERS.

Published in:

Journal of Circuits, Systems & Computers, 2013, v. 22, n. 7, p. -1, doi. 10.1142/S0218126613500552

By:

SHI, LING-FENG;
ZENG, AI-QIN;
LI, QIN-QIN;
CHENG, LI-YE;
LAI, XIN-QUAN

Publication type:

Article

DESIGN OF AN INTEGRATED SCANNING MICROMIRROR DRIVER IN BCD TECHNOLOGY.

Published in:

Journal of Circuits, Systems & Computers, 2011, v. 20, n. 4, p. 781, doi. 10.1142/S0218126611007608

By:

SAPONARA, SERGIO;
BALDETTI, TOMMASO;
FANUCCI, LUCA;
VOLPI, EMILIO;
D'ASCOLI, FRANCESCO

Publication type:

Article

AN EFFICIENT SPICE-BASED TECHNIQUE FOR PERFORMANCE CHARACTERIZATION OF BJT MIXERS.

Published in:

Journal of Circuits, Systems & Computers, 2010, v. 19, n. 6, p. 1333, doi. 10.1142/S0218126610006700

By:

RAUT, RABIN;
DEVABHAKTUNI, VIJAY;
ROY, NILADRI

Publication type:

Article

SELECTIVE HARMONIC ELIMINATION NON-SYMMETRICAL BIPOLAR PULSE WIDTH MODULATION TECHNIQUE:: ANALYSIS AND EXPERIMENTAL VERIFICATION.

Published in:

Journal of Circuits, Systems & Computers, 2010, v. 19, n. 3, p. 719, doi. 10.1142/S0218126610006396

By:

DAHIDAH, MOHAMED S. A.

Publication type:

Article

LOGARITHMICAL CURVATURE-CORRECTED VOLTAGE REFERENCES WITH IMPROVED TEMPERATURE BEHAVIOR.

Published in:

Journal of Circuits, Systems & Computers, 2009, v. 18, n. 3, p. 519, doi. 10.1142/S0218126609005253

By:

POPA, COSMIN

Publication type:

Article

MULTI-GHzSiGe BiCMOS FPGAs WITH NEW ARCHITECTURE AND NOVEL POWER MANAGEMENT TECHNIQUES.

Published in:

Journal of Circuits, Systems & Computers, 2005, v. 14, n. 2, p. 179, doi. 10.1142/S0218126605002234

By:

Zhou, K.;
Guo, J.-R.;
You, C.;
Mayega, J.;
Kraft, R. P.;
Zhang, T.;
McDonald, J. F.;
Goda, B. S.

Publication type:

Article

Voltage-Controlled Current-Mode Multifunction Filter Employing CFTAs and PCAs.

Published in:

Journal of Active & Passive Electronic Devices, 2012, v. 7, n. 1/2, p. 61

By:

Herencsar, Norbert;
Koton, Jaroslav;
Vrba, Kamil;
Lattenberg, Ivo

Publication type:

Article

Programmable High-Value Positive/Negative Floating Resistor.

Published in:

Journal of Active & Passive Electronic Devices, 2011, v. 6, n. 3/4, p. 239

By:

KUMNGERN, MONTREE;
DEJHAN, KOBCHAI

Publication type:

Article

Review of materials and processing methods used in the production of bipolar plates for fuel cells.

Published in:

International Materials Reviews, 2007, v. 52, n. 1, p. 1, doi. 10.1179/174328006X102556

By:

Cunningham, B. D.;
Huang, J.;
Baird, D. G.

Publication type:

Article

The resolving power of a dual-collector lateral bipolar magnetotransistor.

Published in:

Measurement Techniques, 2007, v. 50, n. 7, p. 763, doi. 10.1007/s11018-007-0146-8

By:

R. Tikhonov

Publication type:

Article

Discordancy Test for the Bipolar Watson Distribution Defined on the Hypersphere.

Published in:

Communications in Statistics: Simulation & Computation, 2005, v. 34, n. 1, p. 145, doi. 10.1081/SAC-200047092

By:

FIGUEIREDO, ADELAIDE;
GOMES, PAULO

Publication type:

Article

Low-Power Integrated Circuit Design Optimization Approach.

Published in:

Technical Journal of University of Engineering & Technology Taxila, 2016, v. 21, n. 1, p. 32

By:

Durrani, Y. A.

Publication type:

Article

P-12: A-Si:H TFT Gate Driver with Shared Dual Pull-Down Units for Large-Sized TFT-LCD Applications.

Published in:

SID Symposium Digest of Technical Papers, 2014, v. 45, n. 1, p. 986, doi. 10.1002/j.2168-0159.2014.tb00256.x

By:

Hu, Zhijin;
Liao, Congwei;
Li, Junmei;
Li, Wenjie;
Zhang, Shengdong;
Zeng, Limei;
Lee, Chang‐Yeh;
Lai, Tzu‐Chieh;
Lo, Chang‐Cheng;
Lien, A.

Publication type:

Article

COST-REDUCTION AND SIMPLIFICATION: 1000A high-current RDSon static parameter DC testing vs. pulse testing at 300μs.

Published in:

EE: Evaluation Engineering, 2019, v. 58, n. 5, p. 18

By:

Degenhart, Christian

Publication type:

Article

UNIPOLARIZATION OF BIPOLAR CIRCUIT.

Published in:: 1980
Publication type:: Abstract

Suppression of a Demand Pacemaker in the Presence of Redundant Transvenous Right Ventricular Leads.

Published in:

Pacing & Clinical Electrophysiology, 1980, v. 3, n. 1, p. 84, doi. 10.1111/j.1540-8159.1980.tb04306.x

By:

Frank, G.;
Tyers, O.;
Larrieu, Alberto J.;
Nishimura, Akira;
Williams, Edward H.;
Kurusz, Mark;
Brownlee, Robert R.

Publication type:

Article

Physically based 2D compact model for power bipolar devices.

Published in:

International Journal of Numerical Modelling, 2004, v. 17, n. 4, p. 397, doi. 10.1002/jnm.535

By:

Igic, P. M.;
Towers, M. S.;
Mawby, P. A.

Publication type:

Article

Monte Carlo modelling of abrupt InP/InGaAs HBTs.

Published in:

International Journal of Numerical Modelling, 2003, v. 16, n. 4, p. 319, doi. 10.1002/jnm.501

By:

Garcias-Salvà, Pau;
Lóopez-Gonzáalez, Juan M.;
Prat, Lluis

Publication type:

Article

A termination structure of 2.5kV IGBT with field plate and semi-resistive (SIPOS) layer.

Published in:

International Journal of Numerical Modelling, 2003, v. 16, n. 4, p. 345, doi. 10.1002/jnm.503

By:

Hyoung-Woo Kim;
Jin-Woo Moon;
Sang-Koo Chung

Publication type:

Article

An efficient algorithm for optimizing the electrical performance of HBTs.

Published in:

International Journal of Numerical Modelling, 2003, v. 16, n. 4, p. 353, doi. 10.1002/jnm.504

By:

Hyungkeun Ahn;
El-Nokali, M.;
Deuk-Young Han

Publication type:

Article

Dielectric and work function engineered TFET for ambipolar suppression and RF performance enhancement.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 9, p. 770, doi. 10.1049/el.2015.4348

By:

Raad, B.;
Nigam, K.;
Sharma, D.;
Kondekar, P.

Publication type:

Article

Symmetric bipolar charge-plasma transistor with extruded base for enhanced performance.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 13, p. 1027, doi. 10.1049/el.2015.0115

By:

Bramhane, L. K.;
Upadhyay, N.;
Veluru, J. R.;
Singh, J.

Publication type:

Article

4H-SiC work-function-dependent bipolar transistor with ultra-high current gain.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 24, p. 1805, doi. 10.1049/el.2014.2432

By:

Lei Yuan;
Yuming Zhang;
Qingwen Song;
Xiaoyan Tang;
Yimen Zhang

Publication type:

Article

Design and performance projection of symmetric bipolar charge-plasma transistor on SOI.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 20, p. 1461, doi. 10.1049/el.2014.2407

By:

Sahu, C.;
Ganguly, A.;
Singh, J.

Publication type:

Article

In situ integrated tuner approach for load-pull measurement of Si/SiGe:C HBT at 200 GHz.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 15, p. 1070, doi. 10.1049/el.2014.0186

By:

Hasnaoui, I.;
Pottrain, A.;
Lacave, T.;
Chevalier, P.;
Gloria, D.;
Gaquiere, C.

Publication type:

Article

BiCMOS-integrated photodiode exploiting drift enhancement.

Published in:

Optical Engineering, 2014, v. 53, n. 8, p. 1, doi. 10.1117/1.OE.53.8.087103

By:

Swoboda, Robert;
Schneider-Hornstein, Kerstin;
Wille, Holger;
Langguth, Gernot;
Zimmermann, Horst

Publication type:

Article

Unified switching mechanism for reversible change between unipolar and bipolar switching modes of oxide resistive switching memory devices.

Published in:

Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 5, p. 1, doi. 10.1007/s00339-017-0936-z

By:

Choi, Sang-Jun;
Kim, Ki-Hong;
Yang, Woo-Young;
Kim, Sohyeon;
Oh, Semi;
Kim, Kyoung-Kook;
Kim, Yunkyung;
Hong, Minki;
Nam, Kiyoung;
Cho, Soohaeng

Publication type:

Article

Nonvolatile bipolar resistance switching effects in multiferroic BiFeO thin films on LaNiO-electrodized Si substrates.

Published in:

Applied Physics A: Materials Science & Processing, 2010, v. 100, n. 4, p. 987, doi. 10.1007/s00339-010-5910-y

By:

Xinman Chen;
Guangheng Wu;
Hailei Zhang;
Ni Qin;
Tao Wang;
Feifei Wang;
Wangzhou Shi;
Dinghua Bao

Publication type:

Article

Handling bipolar knowledge with imprecise probabilities.

Published in:

International Journal of Intelligent Systems, 2011, v. 26, n. 5, p. 426, doi. 10.1002/int.20475

By:

Destercke, Sebastien

Publication type:

Article

Bipolar version space learning.

Published in:

International Journal of Intelligent Systems, 2008, v. 23, n. 10, p. 1135, doi. 10.1002/int.20310

By:

Prade, Henri;
Serrurier, Mathieu

Publication type:

Article

Unipolar Recording and Pacing Using a Conductive Introducer Sheath as the Indifferent Electrode.

Published in:

Pacing & Clinical Electrophysiology, 1996, v. 19, n. 11, p. 2014, doi. 10.1111/j.1540-8159.1996.tb03272.x

By:

Goldman, Daniel S.;
Buck, Jerrick C.;
Larnard, Donald J.

Publication type:

Article

A Unique Pulse Generator Safety Feature for Bipolar Lead Fracture.

Published in:

Pacing & Clinical Electrophysiology, 1993, v. 16, n. 7, p. 1368, doi. 10.1111/j.1540-8159.1993.tb01730.x

By:

Mauser, Jonathan F.;
Huang, Shoei K. Stephen;
Risser, Thomas;
Bonavita, Gregory J.;
Wagshal, Alan B.;
Mittleman, Robert S.;
Cuello, Carlos

Publication type:

Article

Use of Bipolar Recordings from Patch-Patch and Rate Sensing Leads to Distinguish Ventricular Tachycardia from Supraventricular Rhythms in Patients with Implantable Cardioverter Defibrillators.

Published in:

Pacing & Clinical Electrophysiology, 1991, v. 14, n. 11, p. 1917, doi. 10.1111/j.1540-8159.1991.tb02790.x

By:

Callans, David J.;
Hook, Bruce G.;
Marchlinski, Francis G.

Publication type:

Article

A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction.

Published in:

Sensors (14248220), 2009, v. 9, n. 10, p. 8336, doi. 10.3390/s91008336

By:

Sheng-Ren Chang;
Hsin Chen

Publication type:

Article

Bipolar technology for transurethral prostatectomy.

Published in:

Expert Review of Medical Devices, 2011, v. 8, n. 2, p. 149, doi. 10.1586/erd.10.90

By:

Ubee, Sarvpreet S.;
Philip, Joe;
Nair, Manu

Publication type:

Article