Active Metamaterial Transmission Line with Gain in SiGe BiCMOS Technology.
- Published in:
- Applied Computational Electromagnetics Society Journal, 2016, v. 31, n. 5, p. 551
- By:
- Publication type:
- Article
Works matching DE "BICMOS analog integrated circuits"
Results: 3
1
2
200 μm APD OEIC in 0.35 μm BiCMOS.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 2, p. 128, doi. 10.1049/el.2015.3540
- By:
- Publication type:
- Article
3
SILICON-GERMANIUM HBT TECHNOLOGY AND APPLICATIONS: A REVIEW.
- Published in:
- i-Manager's Journal on Electronics Engineering, 2017, v. 8, n. 1, p. 35, doi. 10.26634/jele.8.1.13837
- By:
- Publication type:
- Article