Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs.Published in:Sensors (14248220), 2009, v. 9, n. 4, p. 2746, doi. 10.3390/s90402746By:Jia-Hong Zhang;Qing-An Huang;Hong Yu;Shuang-Ying LeiPublication type:Article