Works matching DE "AVALANCHE photodiodes"

Results: 288

Ultralow Photon Flux OWC Links Using UV‐C Single‐Photon Detection.

Published in:

Laser & Photonics Reviews, 2025, v. 19, n. 13, p. 1, doi. 10.1002/lpor.202401804

By:

Liu, Feng;
Farmer, James;
Faulkner, Grahame;
McKendry, Jonathan J. D.;
Xie, Enyuan;
Zheng, Qianfang;
Wang, Zhaoming;
Wang, Jianming;
Hill, Jordan;
Herrnsdorf, Johannes;
Dawson, Martin D.;
O'Brien, Dominic

Publication type:

Article

Analysis of a Charge-Sensitive Preamplifier Circuit with an Improved Time Resolution.

Published in:

Instruments & Experimental Techniques, 2025, v. 68, n. 2, p. 253, doi. 10.1134/S0020441225700435

By:

Sibiryak, Yu. G.

Publication type:

Article

Performance parameters estimation of high speed Silicon/Germanium/InGaAsP avalanche photodiodes wide bandwidth capability in ultra high speed optical communication system.

Published in:

Journal of Optical Communications, 2025, v. 46, n. 3, p. 497, doi. 10.1515/joc-2024-0099

By:

Gopalan, Anitha;
Arulmozhi, Arumugam Krishnan;
Pandian, Manimaraboopathy Maruthu;
Mohanadoss, Priscilla;
Dorairajan, Nithya;
Balaji, Morasa;
Taher, Aziz Mahoumd

Publication type:

Article

Front-End Prototype ASIC with Low-Gain Avalanche Detector Sensors for the ATLAS High Granularity Timing Detector †.

Published in:

Particles (2571-712X), 2025, v. 8, n. 2, p. 50, doi. 10.3390/particles8020050

By:

Hammoud, Salah El Dine

Publication type:

Article

The High-Granularity Timing Detector for ATLAS at HL-LHC †.

Published in:

Particles (2571-712X), 2025, v. 8, n. 2, p. 36, doi. 10.3390/particles8020036

By:

Pinol, Joaquim

Publication type:

Article

Technical performance evaluation of a human brain PET/MRI system.

Published in:

European Radiology, 2012, v. 22, n. 8, p. 1776, doi. 10.1007/s00330-012-2415-4

By:

Kolb, Armin;
Wehrl, Hans;
Hofmann, Matthias;
Judenhofer, Martin;
Eriksson, Lars;
Ladebeck, Ralf;
Lichy, Matthias;
Byars, Larry;
Michel, Christian;
Schlemmer, Heinz-Peter;
Schmand, Matthias;
Claussen, Claus;
Sossi, Vesna;
Pichler, Bernd

Publication type:

Article

Measurement of the Efficiency of Detection by Single-Photon Counters Based on Avalanche Photodiodes by the Method of Spontaneous Parametric Down Conversion with Spectrally Asymmetric Channels.

Published in:

Measurement Techniques, 2019, v. 61, n. 12, p. 1166, doi. 10.1007/s11018-019-01565-6

By:

Gostev, P. P.;
Agapov, D. P.;
Demin, A. V.;
Levin, G. G.;
Mamonov, E. A.;
Magnitsky, S. A.

Publication type:

Article

Upgrade of the CMS Barrel Electromagnetic Calorimeter for the High Luminosity LHC.

Published in:

Instruments (2410-390X), 2022, v. 6, n. 3, p. N.PAG, doi. 10.3390/instruments6030029

By:

Cooke, Charlotte

Publication type:

Article

Advantages and Requirements in Time Resolving Tracking for Astroparticle Experiments in Space.

Published in:

Instruments (2410-390X), 2021, v. 5, n. 2, p. 1, doi. 10.3390/instruments5020020

By:

Duranti, Matteo;
Vagelli, Valerio;
Ambrosi, Giovanni;
Barbanera, Mattia;
Bertucci, Bruna;
Catanzani, Enrico;
Donnini, Federico;
Faldi, Francesco;
Formato, Valerio;
Graziani, Maura;
Ionica, Maria;
Moriconi, Lucio;
Oliva, Alberto;
Serpolla, Andrea;
Silvestre, Gianluigi;
Tost, Luca

Publication type:

Article

Evaluation of the Long-Term Reliability of Open-Tube Diffused Planar InGaAs/InP Avalanche Photodiodes under a Hybrid of Thermal and Electrical Stresses.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 5, p. 802, doi. 10.3390/electronics11050802

By:

Choi, Hyejeong;
Park, Chan-Yong;
Baek, Soo-Hyun;
Moon, Gap Yeal;
Yun, Ilgu

Publication type:

Article

Bit Error Performance of APD and SPAD Receivers in Optical Wireless Communication.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 22, p. 2731, doi. 10.3390/electronics10222731

By:

Mahmoudi, Hiwa;
Zimmermann, Horst

Publication type:

Article

Enhanced performance of T2SLs LWIR avalanche photodiodes with a separate AlxGa1-xSb multiplication layer.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-024-84730-4

By:

Liu, Chen;
Ye, Haifeng;
Zhao, Weilin;
Bai, Rong;
Shi, Yanli

Publication type:

Article

Development of AlGaN‐Based Deep‐Ultraviolet Avalanche Photodetectors—Toward Their Intrinsic Characteristics.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 8, p. 1, doi. 10.1002/pssa.202400538

By:

Jeong, Hoon;
Cho, Minkyu;
Xu, Zhiyu;
Mehnke, Frank;
Shen, Shyh‐Chiang;
Detchprohm, Theeradetch;
Dupuis, Russell D.;
Otte, Adam Nepomuk

Publication type:

Article

High Efficiency O‐band Preamplified Receiver Integrated with Semiconductor Optical Amplifier and Uni‐travelling Carrier Photodiode for Passive Optical Network.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202300648

By:

Gnanamani, Risab;
Bertin, Hervé;
Besancon, Claire;
Mekhazni, Karim;
Caillaud, Christophe;
Deng, Marina;
Mukherjee, Chhandak;
Maneux, Cristell

Publication type:

Article

The Effect of Nanopipes and an Inserted n‐AlGaN Interlayer on GaN Avalanche Photodiodes Performance.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 3, p. 1, doi. 10.1002/pssa.202300490

By:

Sun, Zhaolan;
Yang, Jing;
Zhao, Degang;
Liu, Bing;
Yang, Qian;
Liu, Zongshun;
Duan, Lihong;
Liang, Feng;
Zheng, Fu;
Liu, Xuefeng

Publication type:

Article

Formation of Micro‐Patterned Ga<sub>2</sub>O<sub>3</sub>/Se Heterojunction and its Application to Highly Sensitive Avalanche Photodiode.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 5, p. 1, doi. 10.1002/pssa.202200636

By:

Adachi, Yusuke;
Kobayashi, Taizo

Publication type:

Article

Investigation of HgCdTe avalanche photodiodes for HOT condition.

Published in:

Bulletin of the Polish Academy of Sciences: Technical Sciences, 2024, v. 72, n. 3, p. 1, doi. 10.24425/bpasts.2024.149173

By:

MANYK, Tetiana;
SOBIESKI, Jan;
MATUSZELAŃSKI, Kacper;
RUTKOWSKI, Jarosław;
MARTYNIUK, Piotr

Publication type:

Article

Dithered Depth Imaging for Single-Photon Lidar at Kilometer Distances.

Published in:

Remote Sensing, 2022, v. 14, n. 21, p. 5304, doi. 10.3390/rs14215304

By:

Chang, Jiying;
Li, Jining;
Chen, Kai;
Liu, Shuai;
Wang, Yuye;
Zhong, Kai;
Xu, Degang;
Yao, Jianquan

Publication type:

Article

RECENT DEVELOPMENT OF SB-BASED PHOTOTRANSISTORS IN THE 0.9- TO 2.2-μM WAVELENGTH RANGE FOR APPLICATIONS TO LASER REMOTE SENSING.

Published in:

International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 2, p. 567, doi. 10.1142/S0129156406003850

By:

Abedin, M. Nurul;
Refaat, Tamer F.;
Sulima, Oleg V.;
Singh, Upendra N.

Publication type:

Article

Micro-Optoelectromechanical Tilt Sensor.

Published in:

Journal of Sensors, 2008, p. 1, doi. 10.1155/2008/782764

By:

Constandinou, Timothy G.;
Georgiou, Julius

Publication type:

Article

Avalanche Gain Modeling Revisited in HgCdTe APDs.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 10, p. 5829, doi. 10.1007/s11664-024-11200-y

By:

Rothman, Johan;
Abergel, Julie;
Coquiard, Antoine;
Gout, Sylvain;
Lonjon, Maxime;
Montel, Anaëlle;
Lechevallier, Loïc;
Ferron, Alexandre;
Mavel, Amaury;
Bustillos-Vasco, Samantha;
Renet, Sebastien;
Berger, Frederic;
Vandeneynde, Aurelie;
Brunet-Manquat, Sandy

Publication type:

Article

Avalanche Multiplication and Time in Thin 4H-SiC Avalanche Photodiodes.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 9, p. 5259, doi. 10.1007/s11664-021-09044-x

By:

Cheang, Pei Ling;
Wong, Eng Kiong;
Teo, Lay Lian

Publication type:

Article

High-Gain and Low-Dark Current GaN p-i-n Ultraviolet Avalanche Photodiodes Grown by MOCVD Fabricated Using Ion-Implantation Isolation.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 8, p. 4462, doi. 10.1007/s11664-021-08981-x

By:

Bakhtiary-Noodeh, Marzieh;
Cho, Minkyu;
Jeong, Hoon;
Xu, Zhiyu;
Tsou, Chuan-Wei;
Cao, Can;
Shen, Shyh-Chiang;
Detchprohm, Theeradetch;
Dupuis, Russell D.

Publication type:

Article

Surface passivation of random alloy AlGaAsSb avalanche photodiode.

Published in:

Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 18, p. 1, doi. 10.1049/ell2.12956

By:

Cao, Peng;
Peng, Hongling;
Wang, Tiancai;
Srivastava, Vibha;
Kesaria, Manoj;
You, Minghui;
Zhuang, Qiandong;
Zheng, Wanhua

Publication type:

Article

in brief.

Published in:: Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 17, p. 854, doi. 10.1049/el.2020.2184
Publication type:: Article

Hot pixel classification of single-photon avalanche diode detector arrays using a log-normal statistical distribution.

Published in:

Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 18, p. 1004, doi. 10.1049/el.2019.1427

By:

Connolly, P. W. R.;
Ren, X.;
Henderson, R. K.;
Buller, G. S.

Publication type:

Article

300 GHz quadrature phase shift keying and QAM16 56 Gbps wireless data links using silicon photonics photodiodes.

Published in:

Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 14, p. 808, doi. 10.1049/el.2019.1242

By:

Belem-Goncalves, C.;
Lacombe, E.;
Gidel, V.;
Durand, C.;
Gianesello, F.;
Gloria, D.;
Luxey, C.;
Ducournau, G.

Publication type:

Article

Comparing a radiation damage model for avalanche photodiodes through in-situ observation of CubeSat based devices.

Published in:

Communications Physics, 2025, v. 8, n. 1, p. 1, doi. 10.1038/s42005-025-02042-z

By:

Lenart, Arpad;
Islam, Tanvirul;
Sivasankaran, Srihari;
Neilson, Peter;
Hidding, Bernhard;
Oi, Daniel K. L.;
Ling, Alexander

Publication type:

Article

Fabrication and characterization of Si-PIN photodiodes.

Published in:

Turkish Journal of Physics, 2019, v. 43, n. 6, p. 556, doi. 10.3906/fiz-1905-16

By:

DOĞANCI, Emre;
KAYA, Şenol;
AKTAĞ, Aliekber;
DUMAN, Elif SARIGÜL;
TURAN, Raşit;
KARAÇALI, Hüseyin;
YILMAZ, Ercan

Publication type:

Article

Simulation study of front-illuminated GaN avalanche photodiodes with hole-initiated multiplication.

Published in:

Cogent Engineering, 2020, v. 7, n. 1, p. 1, doi. 10.1080/23311916.2020.1764171

By:

Wang, Yangqian;
Zhang, Yuliang;
Yang, Yang A.;
Lu, Xing;
Zou, Xinbo;
Konofaos, Nikos

Publication type:

Article

Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes.

Published in:

Technical Physics Letters, 2023, v. 49, p. S215, doi. 10.1134/S1063785023900819

By:

Maleev, N. A.;
Kuzmenkov, A. G.;
Kulagina, M. M.;
Vasyl'ev, A. P.;
Blokhin, S. A.;
Troshkov, S. I.;
Nashchekin, A. V.;
Bobrov, M. A.;
Blokhin, A. A.;
Voropaev, K. O.;
Bugrov, V. E.;
Ustinov, V. M.

Publication type:

Article

High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines.

Published in:

Technical Physics Letters, 2019, v. 45, n. 7, p. 739, doi. 10.1134/S1063785019070204

By:

Chizh, A. L.;
Mikitchuk, K. B.;
Zhuravlev, K. S.;
Dmitriev, D. V.;
Toropov, A. I.;
Valisheva, N. A.;
Aksenov, M. S.;
Gilinsky, A. M.;
Chistokhin, I. B.

Publication type:

Article

Design and Analysis of Quantum Dot Based Avalanche Photodiode with Intersubband Multiplication.

Published in:

Majlesi Journal of Telecommunication Devices, 2014, v. 3, n. 2, p. 77

By:

Yousefli, Amir;
Zavvari, Mahdi;
Abedi, Kambiz

Publication type:

Article

Repeated γ irradiation and thermal annealing via built-in thermo-electric coolers of Si avalanche photodiodes.

Published in:

Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-72535-4

By:

Wu, Shuin Jian;
Chowdhury, Arya;
Soe, Moe Thar;
Ling, Alexander

Publication type:

Article

Non-linearities and data analysis: towards a quantitative investigation of delayed luminescence.

Published in:

Human & Experimental Toxicology, 2006, v. 25, n. 3, p. 141, doi. 10.1191/0960327106ht588oa

By:

Ciardi, A.;
Milani, M.

Publication type:

Article

Temperature Rise Characteristics of Silicon Avalanche Photodiodes in Different External Capacitance Circuits Irradiated by Infrared Millisecond Pulse Laser.

Published in:

Crystals (2073-4352), 2021, v. 11, n. 8, p. 866, doi. 10.3390/cryst11080866

By:

Chen, Liang;
Wei, Zhi;
Wang, Di;
Liu, Hong-Xu;
Jin, Guang-Yong

Publication type:

Article

Valence band engineering of GaAsBi for low noise avalanche photodiodes.

Published in:

Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-24966-0

By:

Liu, Yuchen;
Yi, Xin;
Bailey, Nicholas J.;
Zhou, Zhize;
Rockett, Thomas B. O.;
Lim, Leh W.;
Tan, Chee H.;
Richards, Robert D.;
David, John P. R.

Publication type:

Article

Analysis of Active Semiconductor Components Effective Numerical Models of the in the Optical Communication Systems.

Published in:

Indian Journal of Public Health Research & Development, 2018, v. 9, n. 3, p. 485, doi. 10.5958/0976-5506.2018.00332.7

By:

Rajesh, K.

Publication type:

Article

Remote Colorimetric and Structural Diagnosis by RGB-ITR Color Laser Scanner Prototype.

Published in:

Advances in Optical Technologies, 2012, p. 1, doi. 10.1155/2012/512902

By:

Guarneri, Massimiliano;
de Collibus, Mario Ferri;
Fornetti, Giorgio;
Francucci, Massimo;
Nuvoli, Marcello;
Ricci, Roberto

Publication type:

Article

Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes.

Published in:

Nanoscale Research Letters, 2019, v. 14, n. 1, p. 1, doi. 10.1186/s11671-018-2827-4

By:

Cao, Siyu;
Zhao, Yue;
Feng, Shuai;
Zuo, Yuhua;
Zhang, Lichun;
Cheng, Buwen;
Li, Chuanbo

Publication type:

Article

Coding to Enhance Performance of Amplified Optical Communication Systems in the Presence of Noise Components of Optical Devices and Channel Interference.

Published in:

Journal of Active & Passive Electronic Devices, 2012, v. 7, n. 4, p. 285

By:

ABU-GAZLEH, SULAIMAN M.

Publication type:

Article

Meso-photonic Detection with HgCdTe APDs at High Count Rates.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 11, p. 6881, doi. 10.1007/s11664-020-08461-8

By:

Rothman, Johan;
Pes, Salvatore;
Bleuet, Pierre;
Abergel, Julie;
Gout, Sylvain;
Nicolas, Jean-Alain;
Rostaing, Jean-Pierre;
Renet, Sebastien;
Mathieu, Lydie;
Le Perchec, Jérôme

Publication type:

Article

High-Gain Ultraviolet Avalanche Photodiodes Using a ZnSe-Based Organic–Inorganic Hybrid Structure.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 8, p. 4589, doi. 10.1007/s11664-020-07970-w

By:

Ichikawa, Yuki;
Tanaka, Keita;
Nakagawa, Kazuki;
Fujii, Yuta;
Yoshida, Kentaro;
Nakamura, Kaiki;
Miyazaki, Ryuichi;
Abe, Tomoki;
Kasada, Hirofumi;
Ichino, Kunio;
Akaiwa, Kazuaki

Publication type:

Article

Separate Absorption and Multiplication AlGaN Solar-Blind Avalanche Photodiodes With High-low-Doped and Heterostructured Charge Layer.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 4, p. 2343, doi. 10.1007/s11664-020-07950-0

By:

Zhang, Zhenhua;
Sun, Lijie;
Chen, Meng;
Qiu, Xinjia;
Li, Bin;
Jiang, Hao

Publication type:

Article

InGaAs/GaAsSb Type-II Superlattices for Short-Wavelength Infrared Detection.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 10, p. 6025, doi. 10.1007/s11664-019-07441-x

By:

Easley, Justin;
Martin, Christopher R.;
Ettenberg, Martin H.;
Phillips, Jamie

Publication type:

Article

Physics and Limitations of HgCdTe APDs: A Review.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 10, p. 5657, doi. 10.1007/s11664-018-6475-3

By:

Rothman, Johan

Publication type:

Article

Short-Wave Infrared HgCdTe Electron Avalanche Photodiodes for Gated Viewing.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 10, p. 5705, doi. 10.1007/s11664-018-6425-0

By:

Sieck, A.;
Benecke, M.;
Eich, D.;
Oelmaier, R.;
Wendler, J.;
Figgemeier, H.

Publication type:

Article

Development of Fuses for Protection of Geiger-Mode Avalanche Photodiode Arrays.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 11, p. 4187, doi. 10.1007/s11664-015-3975-2

By:

Grzesik, Michael;
Bailey, Robert;
Mahan, Joe;
Ampe, Jim

Publication type:

Article

A Highly Sensitive Multi-element HgCdTe e-APD Detector for IPDA Lidar Applications.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2970, doi. 10.1007/s11664-014-3164-8

By:

Beck, Jeff;
Welch, Terry;
Mitra, Pradip;
Reiff, Kirk;
Sun, Xiaoli;
Abshire, James

Publication type:

Article

Response Time Measurements in Short-Wave Infrared HgCdTe e-APDs.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2947, doi. 10.1007/s11664-014-3155-9

By:

Rothman, Johan;
Foubert, Kevin;
Lasfargues, Gilles;
Largeron, Christophe

Publication type:

Article