Works matching DE "ARSENIDES"

Results: 182

THERMAL CHARACTERIZATION OF GaAsN THIN FILMS BY PULSED PHOTOTHERMAL REFLECTANCE TECHNIQUE.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 6, p. 781, doi. 10.1142/S0219581X0400267X

By:

Zhao, Yimin;
Chen, George;
Wang, Shanzhong;
Yoon, Soon Fatt

Publication type:

Article

Typomorphic features of platinum group minerals in the Kundus Placer gold (Kaakhem Ophiolite Belt, Tuva).

Published in:

Lithology & Mineral Resources, 2012, v. 47, n. 5, p. 437, doi. 10.1134/S002449021203008X

By:

Oidup, Ch.;
Mongush, A.;
Khuragan, Ch.

Publication type:

Article

Superconductivity in Ca10(Ir4As8)(Fe2As2)5 with Square-Planar Coordination of Iridium.

Published in:

Scientific Reports, 2013, p. 1, doi. 10.1038/srep03101

By:

Kazutaka Kudo;
Daisuke Mitsuoka;
Masaya Takasuga;
Yuki Sugiyama;
Kento Sugawara;
Naoyuki Katayama;
Hiroshi Sawa;
Hiroaki S. Kubo;
Kenta Takamori;
Masanori Ichioka;
Tatsuo Fujii;
Takashi Mizokawa;
Minoru Nohara

Publication type:

Article

Shear Acoustic Phonons in Multilayer Arsenide Semiconductor Nanostructures.

Published in:

Journal of Nano- & Electronic Physics, 2019, v. 11, n. 1, p. 1, doi. 10.21272/jnep.11(1).01019

By:

Boyko, I. V.;
Petryk, M. R.

Publication type:

Article

Theory of Interband Optical Absorption in Quantum Wells Based on Bulk Materials with Anisotropic Nonparabolic Bands.

Published in:

Journal of Nano- & Electronic Physics, 2017, v. 9, n. 5, p. 1, doi. 10.21272/jnep.9(5).05012

By:

Ivchenko, V. V.;
Shcherbiuk, V. S.

Publication type:

Article

Growth and Сharacterization of Cd3As2 + MnAs Сomposite.

Published in:

Journal of Nano- & Electronic Physics, 2015, v. 7, n. 4, p. 04079-1

By:

Kochura, A. V.;
Marenkin, S. F.;
Ril, A. I.;
Zheludkevich, A. L.;
Abakumov, P. V.;
Knjazev, A. F.;
Dobromyslov, M. B.

Publication type:

Article

Long-wavelength, confined optical phonons in InAs nanowires probed by Raman spectroscopy.

Published in:

European Physical Journal B: Condensed Matter, 2011, v. 79, n. 4, p. 423, doi. 10.1140/epjb/e2011-10705-2

By:

Cantoro, M.;
Klekachev, A. V.;
Nourbakhsh, A.;
Sorée, B.;
Heyns, M. M.;
De Gendt, S.

Publication type:

Article

Calculating electron transport properties scattered by inhomogeneous distributed Aluminium Galium Arsenide material in cylindrical nanowire.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2024, v. 38, n. 10, p. 1, doi. 10.1142/S021797922450139X

By:

Alqarni, Manal M.;
Jammal, Nada H.;
Aldawsari, Sarah M.;
Raffah, Bahaaudin M.

Publication type:

Article

Platinum-Group Element Distribution in Some Ore Deposits: Results of EPMA and Micro-PIXE Analyses.

Published in:

Microchimica Acta, 2004, v. 147, n. 3, p. 167, doi. 10.1007/s00604-004-0187-5

By:

Gervilla, Fernando;
Cabri, Louis J.;
Kojonen, Kari;
Oberthür, Thomas;
Weiser, Thorolf W.;
Johanson, Bo;
Sie, Soey H.;
Campbell, J. L.;
Teesdale, Williams J.;
Laflamme, J. H. Gilles

Publication type:

Article

Position of the Fermi level on an indium arsenide surface treated in sulfur vapor.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1301, doi. 10.1134/1.1187912

By:

Bezryadin, N. N.;
Tatokhin, E. A.;
Budanov, A. V.;
Linnik, A. V.;
Arsent’ev, I. N.

Publication type:

Article

Negative differential resistivity of a nonideal Schottky barrier based on indium arsenide.

Published in:

Semiconductors, 1997, v. 31, n. 3, p. 308, doi. 10.1134/1.1187134

By:

Kalameıtsev, A. V.;
Romanov, D. A.;
Kovchavtsev, A. P.;
Kuryshev, G. L.;
Postnikov, K. O.;
Subbotin, I. M.

Publication type:

Article

Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 15, doi. 10.1134/1.1187044

By:

Zhukov, A. E.;
Egorov, A. Yu.;
Ustinov, V. M.;
Tsatsul’nikov, A. F.;
Maksimov,, M. V.;
Faleev, N. N.;
Kop’ev, P. S.

Publication type:

Article

Structural elucidation of AgAsS2 glass by the analysis of clusters formed during laser desorption ionisation applying quadrupole ion trap time-of-flight mass spectrometry.

Published in:

Rapid Communications in Mass Spectrometry: RCM, 2016, v. 30, n. 5, p. 594, doi. 10.1002/rcm.7479

By:

Mawale, Ravi Madhukar;
Alberti, Milan;
Zhang, Bo;
Fraenkl, Max;
Wagner, Tomas;
Havel, Josef

Publication type:

Article

Laser ablation synthesis of new gold arsenides using nano-gold and arsenic as precursors. Laser desorption ionisation time-of-flight mass spectrometry and spectrophotometry.

Published in:

Rapid Communications in Mass Spectrometry: RCM, 2014, v. 28, n. 6, p. 577, doi. 10.1002/rcm.6815

By:

Prokeš, Lubomír;
Peña‐Méndez, Eladia María;
Conde, José Elias;
Panyala, Nagender Reddy;
Alberti, Milan;
Havel, Josef

Publication type:

Article

High Thermal Conductivity in Boron Arsenide: From Prediction to Reality.

Published in:

Angewandte Chemie, 2019, v. 131, n. 18, p. 5882, doi. 10.1002/ange.201812112

By:

Tian, Fei;
Ren, Zhifeng

Publication type:

Article

The influence of oxygen deficiency on structural and electronic properties of layered superconductor (FeAs)(SrVO).

Published in:

Journal of Materials Science, 2012, v. 47, n. 8, p. 3663, doi. 10.1007/s10853-011-6214-0

By:

Suetin, D.;
Shein, I.;
Ivanovskii, A.

Publication type:

Article

Direct detection of electron spins and doping effects in spin-polarized electron transport in gallium arsenide.

Published in:

Journal of Materials Science, 2010, v. 45, n. 1, p. 124, doi. 10.1007/s10853-009-3901-1

By:

Miah, M. Idrish

Publication type:

Article

Evolution of the electronic structure and properties of neutral and charged arsenic clusters.

Published in:

Journal of Materials Science, 2007, v. 42, n. 22, p. 9154, doi. 10.1007/s10853-007-1928-8

By:

Ling Guo

Publication type:

Article

Properties of GaAs films deposited by pulse periodic technique.

Published in:

Journal of Materials Science, 2007, v. 42, n. 4, p. 1321, doi. 10.1007/s10853-006-1192-3

By:

Murali, K.

Publication type:

Article

METAL-GaAs INTERACTION AND CONTACT DEGRADATION IN MICROWAVE MESFETs.

Published in:

Quality & Reliability Engineering International, 1990, v. 6, n. 1, p. 29, doi. 10.1002/qre.4680060108

By:

Zanoni, Enrico;
Callegari, Alessandro;
Canali, Claudio;
Fantini, Fausto;
Hartnagel, Hans L.;
Magistrali, Fabrizio;
Paccagnella, Alessandro;
Vanzi, Massimo

Publication type:

Article

(π, π) electronic order in iron arsenide superconductors.

Published in:

Nature, 2009, v. 457, n. 7229, p. 569, doi. 10.1038/nature07714

By:

Zabolotnyy, V. B.;
Inosov, D. S.;
Evtushinsky, D. V.;
Koitzsch, A.;
Kordyuk, A. A.;
Sun, G. L.;
Park, J. T.;
Haug, D.;
Hinkov, V.;
Boris, A. V.;
Lin, C. T.;
Knupfer, M.;
Yaresko, A. N.;
Büchner, B.;
Varykhalov, A.;
Follath, R.;
Borisenko, S. V.

Publication type:

Article

Nearly isotropic superconductivity in (Ba,K)Fe2As2.

Published in:

Nature, 2009, v. 457, n. 7229, p. 565, doi. 10.1038/nature07676

By:

Yuan, H. Q.;
Singleton, J.;
Balakirev, F. F.;
Baily, S. A.;
Chen, G. F.;
Luo, J. L.;
Wang, N. L.

Publication type:

Article

Unconventional superconductivity in Ba0.6K0.4Fe2As2 from inelastic neutron scattering.

Published in:

2008

By:

Christianson, A. D.;
Goremychkin, E. A.;
Osborn, R.;
Rosenkranz, S.;
Lumsden, M. D.;
Malliakas, C. D.;
Todorov, I. S.;
Claus, H.;
Chung, D. Y.;
Kanatzidis, M. G.;
Bewley, R. I.;
Guidi, T.

Publication type:

Letter

Growth Retardation and Histopathology of Common Carp (Cyprinus carpio) Exposed to Gallium.

Published in:

Bulletin of Environmental Contamination & Toxicology, 2003, v. 71, n. 2, p. 0240, doi. 10.1007/s00128-003-0156-4

By:

Yang, J.-L.;
Chen, H.-C.

Publication type:

Article

Completing the Ba–As Compositional Space: Synthesis and Characterization of Three New Binary Zintl Arsenides, Ba 3 As 4 , Ba 5 As 4 , and Ba 16 As 11.

Published in:

Crystals (2073-4352), 2024, v. 14, n. 6, p. 570, doi. 10.3390/cryst14060570

By:

Watts, Spencer R.;
Wingate, Lindsey M.;
Bobev, Svilen;
Baranets, Sviatoslav

Publication type:

Article

First-Principles Assessment of the Structure and Stability of 15 Intrinsic Point Defects in Zinc-Blende Indium Arsenide.

Published in:

Crystals (2073-4352), 2019, v. 9, n. 1, p. 48, doi. 10.3390/cryst9010048

By:

Peng, Qing;
Chen, Nanjun;
Huang, Danhong;
Heller, Eric R.;
Cardimona, David A.;
Gao, Fei

Publication type:

Article

Synthesis, Crystal and Electronic Structures of the Pnictides AE3TrPn3 (AE = Sr, Ba; Tr = Al, Ga; Pn = P, As).

Published in:

Crystals (2073-4352), 2015, v. 5, n. 4, p. 433, doi. 10.3390/cryst5040433

By:

Stoyko, Stanislav S.;
Voss, Leonard H.;
Hua He;
Bobev, Svilen

Publication type:

Article

Optical microscope with SNOM option for micro- and nanoanalytical investigations at low temperatures.

Published in:

Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 6, p. 889, doi. 10.1007/s00339-002-1970-y

By:

Danzebrink, H.-U.;
Kazantsev, D.V.;
Dal Savio, C.;
Pierz, K.;
Güttler, B.

Publication type:

Article

Klippel-Trenaunay Sendromu ile İlişkili Oral Piyojenik Granloma.

Published in:

Turkiye Klinikleri Journal of Dental Sciences, 2013, v. 19, n. 2, p. 151

By:

Güney YILMAZ, Hasan;
BAYINDIR, Hakan;
TÜMER, Hayriye;
UYANIK, Lokman Onur

Publication type:

Article

Estimate of ionicity of zeolite NaA using the frequency shift values of physisorbed molecular hydrogen.

Published in:

Molecular Physics, 1996, v. 88, n. 5, p. 1399, doi. 10.1080/00268979609484519

By:

Larin, Alexander V.;
Lara, Evelyne Cohen De

Publication type:

Article

The optical and electrical effects of high concentrations of defects in irradiated crystalline gallium arsenide.

Published in:

Advances in Physics, 1975, v. 24, n. 5, p. 593, doi. 10.1080/00018737500101471

By:

Coates, R.;
Mitchell, E.W.J.

Publication type:

Article

Structural Distortion Stabilizing the Antiferromagnetic and Semiconducting Ground State of BaMn2As2.

Published in:

Symmetry (20738994), 2016, v. 8, n. 10, p. 99, doi. 10.3390/sym8100099

By:

Krüger, Ekkehard

Publication type:

Article

Krutovit a sprievodné minerály z lokality Dobšiná-Teliatko (Slovenská republika).

Published in:

Bulletin Mineralogicko-Petrologickeho Oddeleni Narodniho Muzea v Praze, 2013, v. 21, n. 1, p. 1

By:

ŠTEVKO, MARTIN;
SEJKORA, JIŘÍ;
LITOCHLEB, JIŘÍ;
MACEK, IVO;
BAČÍK, PETER

Publication type:

Article

Structural phase transition of BeTe: an ab initio molecular dynamics study.

Published in:

Journal of Molecular Modeling, 2017, v. 23, n. 9, p. 1, doi. 10.1007/s00894-017-3422-9

By:

Alptekin, Sebahaddin

Publication type:

Article

Application of low-cost Gallium Arsenide light-emitting-diodes as kerma dosemeter and fluence monitor for high-energy neutrons.

Published in:

Radiation Protection Dosimetry, 2007, v. 126, n. 1-4, p. 256, doi. 10.1093/rpd/ncm053

By:

Mukherjee, B.;
Simrock, S.;
Khachan, J.;
Rybka, D.;
Romaniuk, R.

Publication type:

Article

Ab Initio Investigation of Vibrational, Optical and Thermodynamics Properties of Yttrium Arsenide.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 10, p. 5670, doi. 10.1007/s11664-017-5623-5

By:

Kansara, Shivam;
Singh, Deobrat;
Gupta, Sanjeev;
Sonvane, Yogesh

Publication type:

Article

Optical Distinctions Between Weyl Semimetal TaAs and Dirac Semimetal NaBi: An Ab Initio Investigation.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 11, p. 5867, doi. 10.1007/s11664-016-4766-0

By:

Dadsetani, Mehrdad;
Ebrahimian, Ali

Publication type:

Article

New Ternary Arsenides for High-Temperature Thermoelectric Applications.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1030, doi. 10.1007/s11664-008-0623-0

By:

Hong Xu;
Holgate, Tim;
Jian He;
Zhe Su;
Tritt, Terry M.;
Kleinke, Holger

Publication type:

Article

Electro-Thermal Resistance of GaAs Interconnects.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 3, p. 294, doi. 10.1007/s11664-005-0216-0

By:

Wartenberg, Scott A.;
Gang Zhao;
Liu, Qing H.

Publication type:

Article

Surface effect of n-GaAs cap on the THz emission in LT-GaAs.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 14, p. 12436, doi. 10.1007/s10854-018-9360-1

By:

Balgos, Maria Herminia;
Jaculbia, Rafael;
Prieto, Elizabeth Ann;
Mag-usara, Valynn Katrine;
Tani, Masahiko;
Salvador, Arnel;
Estacio, Elmer;
Somintac, Armando

Publication type:

Article

Modeling of on-chip inductors and transformers for GaAs mmics.

Published in:

Microwave & Optical Technology Letters, 2005, v. 47, n. 3, p. 270, doi. 10.1002/mop.21144

By:

Mohan, Akhilesh;
Boeck, Georg;
Biswas, Animesh

Publication type:

Article

Autoclave Leaching of Arsenic from Copper Concentrate and Matte.

Published in:

Metallurgist, 2015, v. 59, n. 1/2, p. 177, doi. 10.1007/s11015-015-0080-y

By:

Neustroev, V.;
Karimov, K.;
Naboichenko, S.;
Kovyazin, A.

Publication type:

Article

The quaternary arsenide oxides Ce9Au5- xAs8O6 and Pr9Au5- xAs8O6.

Published in:

Zeitschrift für Naturforschung B: A Journal of Chemical Sciences, 2016, v. 71, n. 12, p. 1245, doi. 10.1515/znb-2016-0160

By:

Bartsch, Timo;
Hoffmann, Rolf-Dieter;
Pöttgen, Rainer

Publication type:

Article

NaGe6As6: Insertion of sodium into the layered semiconductor germanium arsenide GeAs.

Published in:

Zeitschrift für Naturforschung B: A Journal of Chemical Sciences, 2016, v. 71, n. 5, p. 375, doi. 10.1515/znb-2015-0203

By:

Khatun, Mansura;
Mar, Arthur

Publication type:

Article

Synthesis and structure determinantion of the first lead arsenide phosphide Pb2As xP14- x ( x ~ 3.7).

Published in:

Zeitschrift für Naturforschung B: A Journal of Chemical Sciences, 2016, v. 71, n. 5, p. 603, doi. 10.1515/znb-2016-0048

By:

Schäfer, Konrad;
Köhler, Korbinian;
Baumer, Franziska;
Pöttgen, Rainer;
Nilges, Tom

Publication type:

Article

Nonstoichiometric defects in silicon-doped GaAs epilayers grown on (111)A-and (111)B-oriented substrates.

Published in:

Doklady Physics, 2008, v. 53, n. 4, p. 187, doi. 10.1134/S1028335808040034

By:

Yaremenko, N.;
Galiev, G.;
Karachevtseva, M.;
Mokerov, V.;
Strakhov, V.

Publication type:

Article

Specific features of the formation of dislocation structure in gallium arsenide single crystals obtained by the Czochralski method.

Published in:

Crystallography Reports, 2017, v. 62, n. 2, p. 275, doi. 10.1134/S1063774517020201

By:

Parfenteva, I.;
Pugachev, B.;
Pavlov, V.;
Kozlova, Yu.;
Knyazev, C.;
Yugova, T.

Publication type:

Article

Structure of hydrides based on V-Cr alloys.

Published in:

Crystallography Reports, 2014, v. 59, n. 6, p. 892, doi. 10.1134/S1063774514060194

By:

Lushnikov, S.;
Verbetskii, V.;
Somenkov, V.;
Glazkov, V.

Publication type:

Article

Structural and electrical properties of quantum wells with nanoscale InAs inserts in InAlAs/InGaAs heterostructures on InP substrates.

Published in:

Crystallography Reports, 2011, v. 56, n. 2, p. 298, doi. 10.1134/S1063774511020180

By:

Vasil'ev, A.;
Vasil'evskii, I.;
Galiev, G.;
Imamov, R.;
Klimov, E.;
Kovalchuk, M.;
Ponomarev, D.;
Roddatis, V.;
Subbotin, I.

Publication type:

Article

Electrochemically modified semiconductor gallium arsenide electrodes for the argentometric titration of chlorides with silver nitrate in natural samples.

Published in:

Journal of Analytical Chemistry, 2014, v. 69, n. 11, p. 1079, doi. 10.1134/S1061934814110033

By:

Burakhta, V.;
Sataeva, S.

Publication type:

Article