Works matching DE "ANNEALING of semiconductors"
Results: 153
Effects of Thermal Annealing and Solvent Annealing on the Morphologies and Properties of Poly(3-hexylthiophene) Nanowires.
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- Macromolecular Chemistry & Physics, 2015, v. 216, n. 1, p. 59, doi. 10.1002/macp.201400315
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Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications.
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- Advanced Functional Materials, 2015, v. 25, n. 12, p. 1873, doi. 10.1002/adfm.201404375
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Impact of thermal annealing on internal device parameters of GaAs<sub>0.965</sub>Bi<sub>0.035</sub>/GaAs<sub>0.75</sub>P<sub>0.25</sub> quantum well lasers.
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- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 12, doi. 10.1049/iet-opt.2018.5031
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Interface Engineering of a Compatible PEDOT Derivative Bilayer for High-Performance Inverted Perovskite Solar Cells.
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- Advanced Materials Interfaces, 2017, v. 4, n. 6, p. n/a, doi. 10.1002/admi.201600948
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Investigation of the optimal annealing temperature for the enhanced thermoelectric properties of MOCVD-grown ZnO films.
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- Journal of Experimental & Theoretical Physics, 2017, v. 124, n. 4, p. 580, doi. 10.1134/S1063776117040045
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Thermodynamics of a phase transition of silicon nanoparticles at the annealing and carbonization of porous silicon.
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- Journal of Experimental & Theoretical Physics, 2015, v. 121, n. 6, p. 1042, doi. 10.1134/S1063776115130129
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Effect of Annealing Time on the Power Conversion Efficiency of Silicon Nanowire Based Solar Cell Prepared by Wet Diffusion Technique.
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- Journal of Nano- & Electronic Physics, 2017, v. 9, n. 6, p. 1, doi. 10.21272/jnep.9(6).06025
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Purification of the Cd(Mn)Te For X-ray Detector Crystals by Special Annealing.
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- Journal of Nano- & Electronic Physics, 2017, v. 9, n. 6, p. 1, doi. 10.21272/jnep.9(6).06004
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Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition.
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- Journal of Information Display, 2019, v. 20, n. 2, p. 73, doi. 10.1080/15980316.2018.1540365
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Characterisation of Mn<sub>0·7</sub>Zn<sub>0·3</sub>Fe<sub>2</sub>O<sub>4</sub> nanoparticles prepared by two stage annealing.
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- Materials Technology, 2013, v. 28, n. 6, p. 339, doi. 10.1179/1753555713Y.0000000066
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Effect of Annealing Temperature on CuInSe<sub>2</sub>/ZnS Thin-Film Solar Cells Fabricated by Using Electron Beam Evaporation.
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- International Journal of Photoenergy, 2013, p. 1, doi. 10.1155/2013/568904
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The Effect of Annealing Temperature and KCN Etching on the Photovoltaic Properties of Cu(In,Ga)(S,Se)<sub>2</sub> Solar Cells Using Nanoparticles.
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- International Journal of Photoenergy, 2013, p. 1, doi. 10.1155/2013/416245
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Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors.
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- International Journal of Photoenergy, 2013, p. 1, doi. 10.1155/2013/372869
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Optical and Thermal Properties of In<sub>2</sub>S<sub>3</sub>.
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- International Journal of Photoenergy, 2011, p. 1, doi. 10.1155/2011/734574
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- Article
EFFECT OF THERMAL ANNEALING ON THE THERMOLUMINESCENT PROPERTIES OF NANO-CALCIUM FLUORIDE AND ITS DOSE–RESPONSE CHARACTERISTICS.
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- Radiation Protection Dosimetry, 2015, v. 167, n. 4, p. 419, doi. 10.1093/rpd/ncu333
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Dark and illuminated J(V) characteristics of thin layered bulk heterojunction P3HT:PCBM sandwich solar cells after thermal treatment.
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- Optical & Quantum Electronics, 2020, v. 52, n. 9, p. N.PAG, doi. 10.1007/s11082-020-02516-0
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Double band gap gradients in sequentially processed photovoltaic absorbers from the Cu(In,Ga)Se<sub>2</sub>‐ZnSe pseudobinary system.
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- Progress in Photovoltaics, 2018, v. 26, n. 2, p. 135, doi. 10.1002/pip.2958
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Progress on large area n-type silicon solar cells with front laser doping and a rear emitter.
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- Progress in Photovoltaics, 2016, v. 24, n. 8, p. 1149, doi. 10.1002/pip.2767
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Conformation Locking on Fused‐Ring Electron Acceptor for High‐Performance Nonfullerene Organic Solar Cells.
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- Advanced Functional Materials, 2018, v. 28, n. 11, p. 1, doi. 10.1002/adfm.201705095
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- Article
Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices.
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- Advanced Functional Materials, 2016, v. 26, n. 17, p. 2820, doi. 10.1002/adfm.201505274
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E‐band InAs quantum dot laser on InGaAs metamorphic buffer layer with filter layer.
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- Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 14, p. 567, doi. 10.1049/ell2.12189
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Thermally Induced Shape Modification of Free-standing Nanostructures for Advanced Functionalities.
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- Scientific Reports, 2013, p. 1, doi. 10.1038/srep02429
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Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors.
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- Nanomaterials (2079-4991), 2018, v. 8, n. 4, p. 203, doi. 10.3390/nano8040203
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INFLUENCE OF ANNEALING ON STRUCTURAL AND OPTICAL PROPERTIES OF GERMANIUM QUANTUM DOTS.
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- Journal of Ovonic Research, 2012, v. 8, n. 2, p. 21
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Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.
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- PLoS ONE, 2016, v. 11, n. 8, p. 1, doi. 10.1371/journal.pone.0161736
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The Optical Properties of Aluminum-Doped Zinc Oxide Thin Films (AZO): New Methods for Estimating Gap States.
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- Journal of Superconductivity & Novel Magnetism, 2019, v. 32, n. 5, p. 1319, doi. 10.1007/s10948-018-4828-z
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Annealing Effects on Microstructure and Magnetic Properties of (NdPr)<sub>9.5</sub>(FeNbCoCu)<sub>79.5</sub>(BC)<sub>11</sub> Nanocomposite Magnets.
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- Journal of Superconductivity & Novel Magnetism, 2019, v. 32, n. 3, p. 493, doi. 10.1007/s10948-018-4744-2
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The Effect of Ar Ambient Pressure and Annealing Duration on the Microstructure, Superconducting Properties and Activation Energies of MgB Superconductors.
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- Journal of Superconductivity & Novel Magnetism, 2017, v. 30, n. 5, p. 1161, doi. 10.1007/s10948-016-3877-4
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The Effect of High Magnetic Field on Electromagnetic Response and Microwave Absorption of Cobalt Particles During Annealing Process.
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- Journal of Superconductivity & Novel Magnetism, 2017, v. 30, n. 2, p. 463, doi. 10.1007/s10948-016-3686-9
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Effect of Annealing Temperature and Boron Addition on Magnetic Properties of Hexaferrites Synthesized by Standard Ceramic Method.
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- Journal of Superconductivity & Novel Magnetism, 2015, v. 28, n. 4, p. 1395, doi. 10.1007/s10948-014-2865-9
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Annealing Effect on the Structural, Magnetic and Magnetocaloric Properties of LaCaKMnO Synthesized by SolGel Method.
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- Journal of Superconductivity & Novel Magnetism, 2015, v. 28, n. 4, p. 1379, doi. 10.1007/s10948-014-2866-8
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Exchange Spring Effect in RF-Annealed Amorphous CoFeBSi Ribbons.
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- Journal of Superconductivity & Novel Magnetism, 2013, v. 26, n. 5, p. 1687, doi. 10.1007/s10948-012-2032-0
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Photoelectric Characteristics and Surface Morphology of Cadmium Sulfide Modified by Iron Arachinate.
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- Semiconductors, 2024, v. 58, n. 5, p. 409, doi. 10.1134/S1063782624050063
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Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures.
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- Semiconductors, 2018, v. 52, n. 15, p. 1969, doi. 10.1134/S1063782618150046
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- Article
Ion Synthesis: Si-Ge Quantum Dots.
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- Semiconductors, 2018, v. 52, n. 5, p. 625, doi. 10.1134/S1063782618050081
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- Article
Raman scattering in InP doped by Be-ion implantation.
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- Semiconductors, 2017, v. 51, n. 2, p. 168, doi. 10.1134/S106378261702004X
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Study of silicon doped with zinc ions and annealed in oxygen.
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- Semiconductors, 2017, v. 51, n. 2, p. 178, doi. 10.1134/S1063782617020154
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Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma.
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- Semiconductors, 2016, v. 50, n. 8, p. 1010, doi. 10.1134/S1063782616080029
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Conduction in titanium dioxide films and metal-TiO-Si structures.
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- Semiconductors, 2016, v. 50, n. 8, p. 1015, doi. 10.1134/S1063782616080133
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Optical and structural properties of CuZnSnS thin films obtained by pulsed laser deposition in a HS atmosphere with subsequent annealing in a N atmosphere.
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- Semiconductors, 2016, v. 50, n. 4, p. 549, doi. 10.1134/S1063782616040229
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Deep centers in TiO-Si structures.
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- Semiconductors, 2015, v. 49, n. 8, p. 1012, doi. 10.1134/S1063782615080102
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Formation and annealing of metastable (interstitial oxygen)-(interstitial carbon) complexes in n- and p-type silicon.
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- Semiconductors, 2014, v. 48, n. 11, p. 1456, doi. 10.1134/S1063782614110141
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Determination of the structural and optical characteristics of CuZnSnS semiconductor thin films.
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- Semiconductors, 2014, v. 48, n. 10, p. 1296, doi. 10.1134/S1063782614100273
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Effect of thermal annealing and exposure to oxygen plasma on the properties of TiO-Si structures.
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- Semiconductors, 2014, v. 48, n. 7, p. 961, doi. 10.1134/S1063782614070100
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Composite materials based on nanostructured zinc oxide.
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- Semiconductors, 2014, v. 48, n. 4, p. 471, doi. 10.1134/S1063782614040022
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Effect of annealing on the electrical properties of PbMnTe single crystals with excess tellurium.
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- Semiconductors, 2014, v. 48, n. 2, p. 139, doi. 10.1134/S1063782614020031
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Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy.
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- Semiconductors, 2013, v. 47, n. 10, p. 1333, doi. 10.1134/S1063782613100035
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Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier.
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- Semiconductors, 2013, v. 47, n. 9, p. 1185, doi. 10.1134/S1063782613090170
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Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm.
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- Semiconductors, 2013, v. 47, n. 4, p. 501, doi. 10.1134/S1063782613040167
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Isochronous annealing of n-Si samples irradiated with 25-MeV protons.
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- Semiconductors, 2012, v. 46, n. 10, p. 1251, doi. 10.1134/S1063782612100107
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- Article