Works about AMORPHOUS semiconductors

Results: 550

High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N2O Plasma Treatment, Exhibiting Similar Drain Current to P‐Type Poly‐Si Device.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 11, p. 1, doi. 10.1002/pssa.202400857

By:

Sun, Jiwon;
Bae, Jinbaek;
Lim, Taebin;
Jeong, Myeonggi;
Nahar, Sabiqun;
Kim, Yuna;
Jang, Jin

Publication type:

Article

TEMPERATURE DEPENDENT COERCIVITY AND RELAXATION PHENOMENA IN AMORPHOUS Fe-(Mn)-Zr-B NANOPARTICLES.

Published in:

International Journal of Nanoscience, 2011, v. 10, n. 4/5, p. 605, doi. 10.1142/S0219581X11008435

By:

MISHRA, DEBABRATA;
PERUMAL, A.;
SRINIVASAN, A.

Publication type:

Article

CONTROLLED GROWTH OF HIGHLY ORIENTED ZnO NANOROD ARRAY ON AMORPHOUS GLASS SUBSTRATE AND THEIR OPTICAL AND ELECTRICAL PROPERTIES.

Published in:

International Journal of Nanoscience, 2011, v. 10, n. 4/5, p. 635, doi. 10.1142/S0219581X11009155

By:

KUSHWAHA, AJAY;
ASLAM, M.

Publication type:

Article

SOLID STATE AMORPHIZATION IN MECHANICALLY ALLOYED Al–Ti–Si NANOCOMPOSITES.

Published in:

International Journal of Nanoscience, 2005, v. 4, n. 5/6, p. 1025, doi. 10.1142/S0219581X05004017

By:

Manna, I.;
Nandi, P.;
Bandyopadhyay, B.;
Nambissan, P. M. G.;
Ghoshray, K.;
Ghoshray, A.

Publication type:

Article

Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 17, p. 2820, doi. 10.1002/adfm.201505274

By:

Pudasaini, Pushpa Raj;
Noh, Joo Hyon;
Wong, Anthony T.;
Ovchinnikova, Olga S.;
Haglund, Amanda V.;
Dai, Sheng;
Ward, Thomas Zac;
Mandrus, David;
Rack, Philip D.

Publication type:

Article

Structural transformations in amorphous As xSe1− x (0 ≤ x ≤ 0.20) films.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1095, doi. 10.1007/s10854-008-9833-8

By:

Mikla, V. I.;
Mikla, V. V.

Publication type:

Article

Trap level spectroscopy in amorphous selenium-based semiconductors.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1059, doi. 10.1007/s10854-009-9951-y

By:

Mikla, V. I.;
Mikla, V. V.

Publication type:

Article

A quantitative characterization of the optical absorption spectrum associated with hydrogenated amorphous silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 10, p. 1033, doi. 10.1007/s10854-008-9825-8

By:

Orapunt, Farida;
O'Leary, Stephen K.

Publication type:

Article

Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 23, doi. 10.1007/s10854-007-9424-0

By:

Bozsoki, Peter;
Hoyer, Walter;
Kira, Mackillo;
Varga, Imre;
Thomas, Peter;
Koch, Stephan W.;
Schomerus, Henning

Publication type:

Article

Low temperature crystallization of amorphous silicon carbide thin films for p–n junction devices fabrication.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 801, doi. 10.1007/s10854-007-9452-9

By:

Hossain, Maruf;
Minseong Yun;
Korampally, Venumadhav;
Gangopadhyay, Shubhra

Publication type:

Article

Comparison of reversible photodarkening in As2S3 and As2Se3 amorphous thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 251, doi. 10.1007/s10854-007-9206-8

By:

Munzar, M.;
Tichy, L.

Publication type:

Article

Crystallization of thin-film Si monitored in real time by in-situ spectroscopic techniques.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 309, doi. 10.1007/s10854-007-9222-8

By:

Stradins, P.;
Teplin, C. W.;
Young, D. L.;
Yan, Y.;
Branz, H. M.;
Wang, Q.

Publication type:

Article

Thermal quenching of the photoluminescence in amorphous silicon–carbon alloys doped with Er ions.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 243, doi. 10.1007/s10854-007-9193-9

By:

Kazitsyna-Baranovski, S.;
Weiser, G.

Publication type:

Article

Optical properties of amorphous/crystalline ZnO nano-powder prepared by solid state reaction.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 4, p. 381, doi. 10.1007/s10854-006-9057-8

By:

Haiming Zhang;
Guoxiang Chen;
Guangwu Yang;
Jiawei Zhang;
Xiaoyuan Lu

Publication type:

Article

X-ray, SEM and magnetic properties of amorphous Fe60Nb40 alloy.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 19, p. 1377, doi. 10.1023/A:1025703831718

By:

Roy, M.;
Agarwal, V. K.

Publication type:

Article

Deterioration of aluminum induced crystallization of sputtered silicon by film stress.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 15, p. 1079, doi. 10.1023/A:1024982723808

By:

Ching-Ming Hsu;
Ming-Chang Yu

Publication type:

Article

In situ crystallization of amorphous semiconductors observed by DTEM.

Published in:

2012

By:

Rosei, F.

Publication type:

Abstract

Effect of Amorphous Content on Dissolution Characteristics of Rifampicin.

Published in:

Drug Development & Industrial Pharmacy, 2008, v. 34, n. 6, p. 642, doi. 10.1080/03639040701842451

By:

Panchagnula, Ramesh;
Bhardwaj, Vivekanand

Publication type:

Article

Processing of X-Ray Diffraction Data in Structure Investigations of Amorphous Metal Oxides.

Published in:

Ferroelectrics, 2004, v. 307, n. 1, p. 191, doi. 10.1080/00150190490493087

By:

Bataronov, I. L.;
Posmet'yev, V. V.;
Barmin, Yu. V.

Publication type:

Article

Dielectric Response in Amorphous Materials Based on Polar Oxides: PbTiO3, PbFe1/2Nb1/2O3 and PbMg1/3Nb2/3O3.

Published in:

Ferroelectrics, 2004, v. 302, n. 1, p. 433, doi. 10.1080/00150190490453658

By:

Korotkov, L.;
Gridnev, S.;
Klimentova, T.;
Dvornikov, V.;
Barmin, Yu.;
Kozhukhar, S.;
Posmet'yev, V.;
Urasov, D.

Publication type:

Article

Dielectric Response in Amorphous and Crystalline PbMg 1/3 Nb 2/3 O 3.

Published in:

Ferroelectrics, 2004, v. 298, n. 1, p. 183, doi. 10.1080/00150190490423552

By:

Korotkov, L.;
Gridnev, S.;
Dvornikov, V.;
Kozhukhar, S.;
Posmet'yev, V.

Publication type:

Article

A Threshold Voltage Model for AOS TFTs Considering a Wide Range of Tail-State Density and Degeneration.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 19, p. 3137, doi. 10.3390/electronics11193137

By:

Cai, Minxi;
Xu, Piaorong;
Liu, Bei;
Peng, Ziqi;
Cai, Jianhua;
Cao, Jing

Publication type:

Article

Microwave-Assisted Annealing Method for Low-Temperature Fabrication of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 19, p. 3094, doi. 10.3390/electronics11193094

By:

Kim, Jong-Woo;
Park, Seong-Geon;
Yang, Min Kyu;
Ju, Byeong-Kwon

Publication type:

Article

Importance of Solvent Evaporation Temperature in Pre-Annealing Stage for Solution-Processed Zinc Tin Oxide Thin-Film Transistors.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 18, p. N.PAG, doi. 10.3390/electronics11182822

By:

Jeon, Sang-Hwa;
Wang, Ziyuan;
Seo, Kyeong-Ho;
Feng, Junhao;
Zhang, Xue;
Park, Jaehoon;
Bae, Jin-Hyuk

Publication type:

Article

Improved Performance and Bias Stability of Al 2 O 3 /IZO Thin-Film Transistors with Vertical Diffusion.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 14, p. N.PAG, doi. 10.3390/electronics11142263

By:

Lee, Se-Hyeong;
Bak, So-Young;
Yi, Moonsuk

Publication type:

Article

Inverse Pseudo Hall-Petch Relation in Polycrystalline Graphene.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep05991

By:

Sha, Z. D.;
Quek, S. S.;
Pei, Q. X.;
Liu, Z. S.;
Wang, T. J.;
Shenoy, V. B.;
Zhang, Y. W.

Publication type:

Article

Synthesis and Characterization of ZnO Thin Film for Modeling the Effect of Its Defects on ZnO/Cu2O Solar Cell EQE.

Published in:

Journal of Nano- & Electronic Physics, 2021, v. 13, n. 1, p. 01009-1, doi. 10.21272/jnep.13(1).01009

By:

Chala, S.;
Boumaraf, R.;
Bouhdjar, A. F.;
Bdirina, M.;
Labed, M.;
Taouririt, T. E.;
Elbar, M.;
Sengouga, N.;
Yakuphanoğlu, F.;
Rahmane, S.;
Naoui, Y.;
Benbouzid, Y.

Publication type:

Article

Defect Pool Numerical Model in Amorphous Semiconductor Device Modeling Program.

Published in:

Journal of Nano- & Electronic Physics, 2019, v. 11, n. 2, p. 1, doi. 10.21272/jnep.11(2).02008

By:

Rahmouni, M.;
Belarbi, S.

Publication type:

Article

States Density Distribution for Determination of a-Si:H Photoconductivity.

Published in:

Journal of Nano- & Electronic Physics, 2017, v. 9, n. 5, p. 1, doi. 10.21272/jnep.9(5).05044

By:

Babychenko, O. Yu.;
Pashchenko, A. G.

Publication type:

Article

First Order Phase Transformation in Amorphous Ge25Se75 - xSbx Glasses.

Published in:

Journal of Nano- & Electronic Physics, 2013, v. 5, n. 2, p. 02021-1

By:

Al-Agel, F. A.;
Al-Marzouki, F. M.;
Al-Ghamdi, A. A.;
Khan, Shamshad A.;
Al-Arfaj, E. A.;
Husain, M.

Publication type:

Article

Aspects of rapid crack propagation in silicon.

Published in:

Fatigue & Fracture of Engineering Materials & Structures, 2007, v. 30, n. 1, p. 32, doi. 10.1111/j.1460-2695.2006.01054.x

By:

SHERMAN, D.

Publication type:

Article

Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation.

Published in:

European Physical Journal B: Condensed Matter, 2011, v. 81, n. 3, p. 283, doi. 10.1140/epjb/e2011-10958-7

By:

Krzeminski, C.;
Lampin, E.

Publication type:

Article

Solar Cells: Transfer Printed Flexible and Stretchable Thin Film Solar Cells Using a Water-Soluble Sacrificial Layer (Adv. Energy Mater. 21/2016).

Published in:

Advanced Energy Materials, 2016, v. 6, n. 21, p. n/a, doi. 10.1002/aenm.201670122

By:

Nam, Jiyoon;
Lee, Youngjoo;
Choi, Wonjung;
Kim, Chang Su;
Kim, Hogyoung;
Kim, Jongbok;
Kim, Dong‐Ho;
Jo, Sungjin

Publication type:

Article

Global Gene Expression Analysis of Bacterial Stress Response to Elevated Concentrations of Toxic Metalloids—Selenium and Arsenic.

Published in:

Geomicrobiology Journal, 2014, v. 31, n. 6, p. 480, doi. 10.1080/01490451.2013.822613

By:

Dhanjal, Soniya;
Singh, Anil Kumar;
Cameotra, Swaranjit Singh

Publication type:

Article

Transmittance oscillation in amorphous semiconductors: Revisited.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2024, v. 38, n. 7, p. 1, doi. 10.1142/S0217979224501066

By:

Tanaka, Keiji

Publication type:

Article

Metal Induced Crystallization of Amorphous Silicon.

Published in:

International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 13, doi. 10.1142/S0129156400000052

By:

Jang, Jin;
Yoon, Soo Young

Publication type:

Article

Laser welding of Ni-based metallic glass foil.

Published in:

Welding International, 2011, v. 25, n. 7, p. 491, doi. 10.1080/09507111003655366

By:

Tsumura, Takuya;
Nakata, Kazuhiro

Publication type:

Article

Medium-Range Order and Optoelectronic Properties of a Tetrahedrally Coordinated Hydrogenated Amorphous Semiconductor.

Published in:

Semiconductors, 2001, v. 35, n. 11, p. 1314, doi. 10.1134/1.1418078

By:

Golikova, O. A.

Publication type:

Article

X-ray Spectroscopic Study of Electronic Structure of Amorphous Silicon and Silicyne.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 956, doi. 10.1134/1.1393035

By:

Mashin, A. I.;
Khokhlov, A. F.;
Domashevskaya, É. P.;
Terekhov, V. A.;
Mashin, N. I.

Publication type:

Article

Levels of Structural Modification of Noncrystalline Semiconductors and Limits of Their Applicability.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 637, doi. 10.1134/1.1379393

By:

Popov, A. I.;
Vorontsov, V. A.;
Popov, I. A.

Publication type:

Article

Electrical and Photoelectric Properties of a-Si:H Layered Films: The Influence of Thermal Annealing.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 353, doi. 10.1134/1.1356161

By:

Kurova, I. A.;
Ormont, N. N.;
Terukov, E. I.;
Trapeznikova, I. N.;
Afanas’ev, V. P.;
Gudovskikh, A. S.

Publication type:

Article

Optical Properties of Amorphous Carbon Films Deposited by Magnetron Sputtering of Graphite.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 220, doi. 10.1134/1.1349936

By:

Ivanov-Omskiı, V. I.;
Tolmatchev, A. V.;
Yastrebov, S. G.

Publication type:

Article

Vibration Modes of Carbon in Hydrogenated Amorphous Carbon Modified with Copper.

Published in:

Semiconductors, 2000, v. 34, n. 12, p. 1391, doi. 10.1134/1.1331797

By:

Ivanov-Omskiı, V. I.;
Zvonareva, T. K.;
Frolova, G. S.

Publication type:

Article

Polarization Photosensitivity of a-Si:H/c-Si Heterojunctions.

Published in:

Semiconductors, 2000, v. 34, n. 7, p. 790, doi. 10.1134/1.1188074

By:

Nikolaev, Yu. A.;
Rud’, V. Yu.;
Rud’, Yu. V.;
Terukov, E. I.

Publication type:

Article

Photoelectric Phenomena in a-Si:H/p-CuInSe[sub 2] Heterostructures.

Published in:

Semiconductors, 2000, v. 34, n. 6, p. 658, doi. 10.1134/1.1188049

By:

Nikolaev, Yu. A.;
Rud’, V. Yu.;
Rud’, Yu. V.;
Terukov, E. I.

Publication type:

Article

The Influence of Erbium on Electrical and Photoelectric Properties of Amorphous Silicon Produced by Radio-Frequency Silane Decomposition.

Published in:

Semiconductors, 2000, v. 34, n. 7, p. 829, doi. 10.1134/1.1188083

By:

Terukov, E. I.;
Kazanin, M. M.;
Kon’kov, O. I.;
Kudoyarova, V. Kh.;
Kougiya, K. V.;
Nikulin, Yu. A.;
Kazanskiı, A. G.

Publication type:

Article

Photosensitivity of a-Si:H/n-InSe Heterocontacts.

Published in:

Semiconductors, 2000, v. 34, n. 6, p. 677, doi. 10.1134/1.1188054

By:

Nikolaev, Yu. A.;
Rud’, V. Yu.;
Rud’, Yu. V.;
Terukov, E. I.

Publication type:

Article

Kinetics of Light-Induced Degradation in a-Si:H Films Investigated by Computer Simulation.

Published in:

Semiconductors, 2000, v. 34, n. 6, p. 717, doi. 10.1134/1.1188060

By:

Meytin, M. N.;
Zeman, M.;
Budaguan, B. G.;
Metselaar, J. W.

Publication type:

Article

The Staebler–Wronski Effect and Temperature Dependences of Photoconductivity in p-type a-Si:H.

Published in:

Semiconductors, 2000, v. 34, n. 6, p. 723, doi. 10.1134/1.1188061

By:

Kuznetsov, S. V.

Publication type:

Article

Effect of Nanocrystalline Inclusions on the Photosensitivity of Amorphous Hydrogenated Silicon Films.

Published in:

Semiconductors, 2000, v. 34, n. 6, p. 737, doi. 10.1134/1.1188064

By:

Golikova, O. A.;
Kazanin, M. M.

Publication type:

Article