Works about AMORPHOUS semiconductors

Results: 546

Fabrication and Optoelectronic Properties of Advanced Quinary Amorphous Oxide Semiconductor InGaZnSnO Thin Film.

Published in:

Materials (1996-1944), 2025, v. 18, n. 9, p. 2090, doi. 10.3390/ma18092090

By:

Wu, Hongyu;
Fang, Liang;
Li, Zhiyi;
Wu, Fang;
Zhang, Shufang;
Liu, Gaobin;
Zhang, Hong;
Li, Wanjun;
Feng, Wenlin

Publication type:

Article

Pentacene organic thin-film transistors and ICs.

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. 63

By:

Klauk, Hagen;
Jackson, Thomas N.;
Gundlach, David J.;
Nichols, Jonathan A.;
Sheraw, Chris D.;
Bonse, Mathias

Publication type:

Article

Report from DUMIC: Low-k still in development.

Published in:

Solid State Technology, 1999, v. 42, n. 5, p. 22

By:

Korczynski, Ed

Publication type:

Article

Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 17, p. 2820, doi. 10.1002/adfm.201505274

By:

Pudasaini, Pushpa Raj;
Noh, Joo Hyon;
Wong, Anthony T.;
Ovchinnikova, Olga S.;
Haglund, Amanda V.;
Dai, Sheng;
Ward, Thomas Zac;
Mandrus, David;
Rack, Philip D.

Publication type:

Article

Deposition time effects on optical gap, dark conductivity and X-ray photoresponse properties of thermal evaporated a-Se thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19256, doi. 10.1007/s10854-018-0052-7

By:

Li, Jitao;
Zhu, Xinghua;
Xie, Qingshuang;
Pu, Guolin;
Yang, Dingyu

Publication type:

Article

Spectroscopic studies on the influence of UV irradiation on linear and nonlinear optical properties of 8-hydroxy quinoline based azo dye.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 15, p. 12959, doi. 10.1007/s10854-018-9416-2

By:

Gaml, Eman A.

Publication type:

Article

Effects of adding elements M (M = C, B, Mn, Al and Al + Co) on stability of amorphous semiconducting Fe-Si films.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 12, p. 10550, doi. 10.1007/s10854-018-9119-8

By:

Li, X. N.;
Zheng, Y. H.;
Liu, Y. B.;
Wang, C. Y.;
Li, Z. M.;
Yu, Q. X.;
Dong, C.

Publication type:

Article

Fabrication of an ultra-thin low resistance and high stability Ru-Mo-C seedless barrier for advanced Cu dual-damascene interconnects.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 12, p. 10346, doi. 10.1007/s10854-018-9091-3

By:

Lin, Liwei;
Liu, Bo;
Zou, Jianxiong;
Jiao, Guohua;
Lu, Yuanfu;
Li, Qiran

Publication type:

Article

Carrier transport mechanisms and photovoltaic characteristics of Au/toluidine blue/n-Si/Al heterojunction solar cell.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 5, p. 3592, doi. 10.1007/s10854-017-8289-0

By:

Zeyada, H. M.;
Youssif, M. I.;
El-Ghamaz, N. A.;
Nasher, M. A.

Publication type:

Article

Band alignments of O-based and HO-based amorphous LaAlO films on silicon by atomic layer deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 803, doi. 10.1007/s10854-016-5593-z

By:

Zhao, Lu;
Liu, Hongxia;
Wang, Xing;
Feng, Xingyao;
Fei, Chenxi

Publication type:

Article

Effect of sulfur on dielectric properties of Cd-Se Glassy system.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2974, doi. 10.1007/s10854-015-4118-5

By:

Ganaie, Mohsin;
Alvi, M.;
Zulfequar, M.

Publication type:

Article

Photoluminescence of sol-gel synthesized transparent amorphous semiconducting La- and Sm-codoped organo-silicate hybrid material.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 12, p. 2293, doi. 10.1007/s10854-012-0823-5

By:

Abo-Naf, S.;
Marzouk, M.;
Elwan, R.

Publication type:

Article

Study on thermal stability of electroless deposited Ni-Co-P alloy thin film.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 9, p. 1495, doi. 10.1007/s10854-011-0336-7

By:

Kumar, Anuj;
Singh, Amanpal;
Kumar, Mukesh;
Kumar, Dinesh;
Barthwal, Sumit

Publication type:

Article

Structural transformations in amorphous As xSe1− x (0 ≤ x ≤ 0.20) films.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1095, doi. 10.1007/s10854-008-9833-8

By:

Mikla, V. I.;
Mikla, V. V.

Publication type:

Article

Trap level spectroscopy in amorphous selenium-based semiconductors.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1059, doi. 10.1007/s10854-009-9951-y

By:

Mikla, V. I.;
Mikla, V. V.

Publication type:

Article

A quantitative characterization of the optical absorption spectrum associated with hydrogenated amorphous silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 10, p. 1033, doi. 10.1007/s10854-008-9825-8

By:

Orapunt, Farida;
O'Leary, Stephen K.

Publication type:

Article

Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 23, doi. 10.1007/s10854-007-9424-0

By:

Bozsoki, Peter;
Hoyer, Walter;
Kira, Mackillo;
Varga, Imre;
Thomas, Peter;
Koch, Stephan W.;
Schomerus, Henning

Publication type:

Article

Low temperature crystallization of amorphous silicon carbide thin films for p–n junction devices fabrication.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 801, doi. 10.1007/s10854-007-9452-9

By:

Hossain, Maruf;
Minseong Yun;
Korampally, Venumadhav;
Gangopadhyay, Shubhra

Publication type:

Article

Comparison of reversible photodarkening in As2S3 and As2Se3 amorphous thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 251, doi. 10.1007/s10854-007-9206-8

By:

Munzar, M.;
Tichy, L.

Publication type:

Article

Crystallization of thin-film Si monitored in real time by in-situ spectroscopic techniques.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 309, doi. 10.1007/s10854-007-9222-8

By:

Stradins, P.;
Teplin, C. W.;
Young, D. L.;
Yan, Y.;
Branz, H. M.;
Wang, Q.

Publication type:

Article

Thermal quenching of the photoluminescence in amorphous silicon–carbon alloys doped with Er ions.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 243, doi. 10.1007/s10854-007-9193-9

By:

Kazitsyna-Baranovski, S.;
Weiser, G.

Publication type:

Article

Optical properties of amorphous/crystalline ZnO nano-powder prepared by solid state reaction.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 4, p. 381, doi. 10.1007/s10854-006-9057-8

By:

Haiming Zhang;
Guoxiang Chen;
Guangwu Yang;
Jiawei Zhang;
Xiaoyuan Lu

Publication type:

Article

DIFFUSION AND HIGH-FREQUENCY NOISE OF ELECTRONS IN AMORPHOUS SEMICONDUCTORS AT LOW ELECTRIC FIELDS.

Published in:

Fluctuation & Noise Letters, 2012, v. 11, n. 3, p. -1, doi. 10.1142/S0219477512420047

By:

BUSCEMI, FABRIZIO;
PICCININI, ENRICO;
RUDAN, MASSIMO;
BRUNETTI, ROSSELLA;
JACOBONI, CARLO

Publication type:

Article

Strategy to utilize amorphous phase of semiconductor toward excellent and reliable photochemical water splitting performance: Roles of interface dipole moment and reaction parallelization.

Published in:

International Journal of Energy Research, 2022, v. 46, n. 3, p. 3674, doi. 10.1002/er.7333

By:

Choi, Heechae;
Han, HyukSu;
Moon, Seong‐I;
Je, Minyeong;
Lee, Seungwoo;
Kwon, Jiseok;
Kim, Seungchul;
Lee, Kwang‐Ryeol;
Ali, Ghulam;
Mathur, Sanjay;
Paik, Ungyu;
Qiao, Shi‐Zhang;
Song, Taeseup

Publication type:

Article

Composition dependent of dielectric properties in Se100-xPbx glassy alloys.

Published in:

Turkish Journal of Physics, 2009, v. 33, n. 4, p. 193, doi. 10.3906/fiz-0809-5

By:

SHARMA, Jyoti;
KUMAR, Santosh

Publication type:

Article

Transient Photoconductivity in Amorphous Se-Ge-Ag System.

Published in:

Turkish Journal of Physics, 2006, v. 30, n. 1, p. 47

By:

Sharma, R. S.;
Kumar, D.;
Kumar, A.

Publication type:

Article

Modulation Frequency-Dependence of Photocurrent in Amorphous Si:H p-i-n and Chalcogenides.

Published in:

Turkish Journal of Physics, 2002, v. 26, n. 5, p. 355

By:

Kaplan, Bengu;
Kaplan, Ruhi

Publication type:

Article

MULTI-BIT STORAGE BASED ON CHALCOGENIDE THIN FILM TRANSISTOR FOR HIGH DENSITY NONVOLATILE MEMORY APPLICATION.

Published in:

Integrated Ferroelectrics, 2009, v. 110, n. 1, p. 34, doi. 10.1080/10584580903435323

By:

YANFEI CAI;
PENG ZHOU;
TINGAO TANG;
CHARLES GAO;
YINYIN LIN

Publication type:

Article

Sol-Gel Processed Strontium Titanate Ceramics.

Published in:

Ferroelectrics Letters Section, 2004, v. 31, n. 3/4, p. 73, doi. 10.1080/07315170490480911

By:

DEVI, A.DHANESHWARI;
SHARMA, H.B.;
SARMA, H.N. K.

Publication type:

Article

Optical, Dielectric, and Conduction Properties of New Phosphorus-Modified Polysulfones.

Published in:

Journal of Macromolecular Science: Physics, 2011, v. 50, n. 8, p. 1571, doi. 10.1080/00222348.2010.541848

By:

Ioan, Silvia;
Buruiana, Luminita-Ioana;
Avram, Ecaterina;
Petreus, Oana;
Musteata, ValentinaElena

Publication type:

Article

Atomic and electronic structures of a-ZnSnO3/a-SiO2 interface by ab initio molecular dynamics simulations.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 9, p. 1765, doi. 10.1002/pssb.201600104

By:

Park, Jaehong;
Lee, Joohwi;
Hwang, Cheol Seong;
Choi, Jung‐Hae

Publication type:

Article

Amorphous and Nanostructured Chalcogenides.

Published in:: Physica Status Solidi (B), 2016, v. 253, n. 6, p. 1032, doi. 10.1002/pssb.201670541
Publication type:: Article

A theoretical approach to conductivity.

Published in:

International Journal of Geometric Methods in Modern Physics, 2020, v. 17, n. 1, p. N.PAG, doi. 10.1142/S0219887820500048

By:

Saglam, Ugur;
Ulutas, Kemal;
Parim, Yagmur;
Yakut, Sahin;
Deger, Deniz

Publication type:

Article

Characterization of high-purity germanium detectors with amorphous germanium contacts in cryogenic liquids.

Published in:

European Physical Journal C -- Particles & Fields, 2020, v. 80, n. 7, p. N.PAG, doi. 10.1140/epjc/s10052-020-8235-9

By:

Panth, R.;
Liu, J.;
Abt, I.;
Liu, X.;
Schulz, O.;
Wei, W.-Z.;
Mei, H.;
Mei, D.-M.;
Wang, G.-J.

Publication type:

Article

All-solid-state rechargeable lithium batteries using SnX-P2X5 (X = S and O) amorphous negative electrodes.

Published in:

Research on Chemical Intermediates, 2006, v. 32, n. 5/6, p. 497, doi. 10.1163/156856706777973835

By:

Hayashi, Akitoshi;
Konishi, Takanori;
Tadanaga, Kiyoharu;
Minami, Tsutomu;
Tatsumisago, Masahiro

Publication type:

Article

Induced dipole moments in amorphous ZnCdS catalysts facilitate photocatalytic H2 evolution.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-47022-z

By:

Wang, Xin;
Liu, Boyan;
Ma, Siqing;
Zhang, Yingjuan;
Wang, Lianzhou;
Zhu, Gangqiang;
Huang, Wei;
Wang, Songcan

Publication type:

Article

Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-43323-x

By:

Liu, Fengjing;
Zhuang, Xinming;
Wang, Mingxu;
Qi, Dongqing;
Dong, Shengpan;
Yip, SenPo;
Yin, Yanxue;
Zhang, Jie;
Sa, Zixu;
Song, Kepeng;
He, Longbing;
Tan, Yang;
Meng, You;
Ho, Johnny C.;
Liao, Lei;
Chen, Feng;
Yang, Zai-xing

Publication type:

Article

Berry curvature contributions of kagome-lattice fragments in amorphous Fe–Sn thin films.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-39112-1

By:

Fujiwara, Kohei;
Kato, Yasuyuki;
Abe, Hitoshi;
Noguchi, Shun;
Shiogai, Junichi;
Niwa, Yasuhiro;
Kumigashira, Hiroshi;
Motome, Yukitoshi;
Tsukazaki, Atsushi

Publication type:

Article

Tailoring of interfaces in amorphous silicon–germanium multilayers on the atomic scale by ultra-high gravity.

Published in:

Philosophical Magazine Letters, 2013, v. 93, n. 12, p. 697, doi. 10.1080/09500839.2013.850545

By:

Iguchi, Yusuke;
Erdélyi, Zoltán;
Langer, Gábor A.;
Magome, Eisuke;
Sumitani, Kazushi;
Csik, Attila;
Beke, Dezső L.;
Mashimo, Tsutomu

Publication type:

Article

Effect of Sn addition on the photoconductivity of narrow-gap Sb2Se3 films.

Published in:

Philosophical Magazine Letters, 2009, v. 89, n. 4, p. 241, doi. 10.1080/09500830902763115

By:

Kumar, P.;
Thangaraj, R.

Publication type:

Article

Effects of irradiation with electrons of different energies on the dark conductivity and the network of hydrogenated amorphous silicon films.

Published in:

Philosophical Magazine Letters, 2008, v. 88, n. 12, p. 871, doi. 10.1080/09500830802468211

By:

Liao, N.M.;
Li, W.;
Liu, Z.;
Jiang, Y.D.;
Ma, N.;
Li, Y.;
Wu, Z.M.;
Li, S.B.

Publication type:

Article

Critical length scales for the deformation of amorphous metals containing nanocrystals.

Published in:

Philosophical Magazine Letters, 2007, v. 87, n. 8, p. 603, doi. 10.1080/09500830701422186

By:

Lund, A. C.;
Schuh, C. A.

Publication type:

Article

Determination of energy of defect centres in a-Se78Ge22 thin films.

Published in:

Philosophical Magazine Letters, 2006, v. 86, n. 11, p. 691, doi. 10.1080/09500830600967091

By:

Kushwaha, N.;
Kushwaha, V. S.;
Shukla, R. K.;
Kumar, A.

Publication type:

Article

Energy and equation-of-state relations for amorphous matter.

Published in:

Philosophical Magazine Letters, 2001, v. 81, n. 6, p. 441, doi. 10.1080/09500830110039993

By:

Liboff, Richard L.

Publication type:

Article

Charge carrier thermalization by hopping in band tails at zero temperature.

Published in:

Philosophical Magazine Letters, 2000, v. 80, n. 12, p. 777, doi. 10.1080/09500830010005685

By:

Marshall, J. M.

Publication type:

Article

Deformation-induced amorphization in ball-milled silicon.

Published in:

Philosophical Magazine Letters, 1999, v. 79, n. 6, p. 305, doi. 10.1080/095008399177147

By:

Huang, J. Y.;
Yasuda, H.;
Mori, H.

Publication type:

Article

Kinetics of photoinduced defect creation in amorphous semiconductors: analogy to a logistic equation in a biological system.

Published in:

Philosophical Magazine Letters, 1999, v. 79, n. 6, p. 375, doi. 10.1080/095008399177228

By:

Senda, M.;
Yoshida, N.;
Shimakawa, K.

Publication type:

Article

Electrical Properties of Na[sub 2]O–CdO–P[sub 2]O[sub 5] Glasses.

Published in:

Modern Physics Letters B, 2000, v. 14, n. 9, p. 319, doi. 10.1142/S0217984900000434

By:

Chaudhry, M. A.;
Altaf, M.

Publication type:

Article

COMPACT CAPACITANCE MODEL FOR PRINTED THIN FILM TRANSISTORS WITH NON-IDEAL CONTACTS.

Published in:

International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 4, p. 801, doi. 10.1142/S0129156411007069

By:

BHALERAO, SHANTANU;
KOUDYMOV, ALEXEY;
SHUR, MICHAEL;
YTTERDAL, TROND;
JACKSON, WARREN;
TAUSSIG, CARL

Publication type:

Article

ELECTRON SCATTERING IN BURIED InGaAs/HIGH-K MOS CHANNELS.

Published in:

International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 1, p. 95, doi. 10.1142/S012915641100643X

By:

OKTYABRSKY, S.;
NAGAIAH, P.;
TOKRANOV, V.;
YAKIMOV, M.;
KAMBHAMPATI, R.;
KOVESHNIKOV, S.;
VEKSLER, D.;
GOEL, N.;
BERSUKER, G.

Publication type:

Article