Works matching DE "AMORPHOUS semiconductors"

Results: 547

Spectroscopic Ellipsometry and Optimized B-Spline Coefficients of Non-hydrogenated Amorphous Silicon for Amorphous Silicon-Based Semiconductors.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5630, doi. 10.1007/s11664-024-11676-8

By:

Ebdah, M. A.;
Kordesch, M. E.;
Jadwisienczak, W. M.;
Ibdah, A.

Publication type:

Article

Pentacene organic thin-film transistors and ICs.

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. 63

By:

Klauk, Hagen;
Jackson, Thomas N.;
Gundlach, David J.;
Nichols, Jonathan A.;
Sheraw, Chris D.;
Bonse, Mathias

Publication type:

Article

Report from DUMIC: Low-k still in development.

Published in:

Solid State Technology, 1999, v. 42, n. 5, p. 22

By:

Korczynski, Ed

Publication type:

Article

Photochemistry in the Low‐Temperature Processing of Metal Oxide Thin Films by Solution Methods.

Published in:

Chemistry - A European Journal, 2020, v. 26, n. 42, p. 9277, doi. 10.1002/chem.202000244

By:

Bretos, Iñigo;
Jiménez, Ricardo;
Ricote, Jesús;
Calzada, M. Lourdes

Publication type:

Article

Deposition time effects on optical gap, dark conductivity and X-ray photoresponse properties of thermal evaporated a-Se thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19256, doi. 10.1007/s10854-018-0052-7

By:

Li, Jitao;
Zhu, Xinghua;
Xie, Qingshuang;
Pu, Guolin;
Yang, Dingyu

Publication type:

Article

Spectroscopic studies on the influence of UV irradiation on linear and nonlinear optical properties of 8-hydroxy quinoline based azo dye.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 15, p. 12959, doi. 10.1007/s10854-018-9416-2

By:

Gaml, Eman A.

Publication type:

Article

Effects of adding elements M (M = C, B, Mn, Al and Al + Co) on stability of amorphous semiconducting Fe-Si films.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 12, p. 10550, doi. 10.1007/s10854-018-9119-8

By:

Li, X. N.;
Zheng, Y. H.;
Liu, Y. B.;
Wang, C. Y.;
Li, Z. M.;
Yu, Q. X.;
Dong, C.

Publication type:

Article

Fabrication of an ultra-thin low resistance and high stability Ru-Mo-C seedless barrier for advanced Cu dual-damascene interconnects.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 12, p. 10346, doi. 10.1007/s10854-018-9091-3

By:

Lin, Liwei;
Liu, Bo;
Zou, Jianxiong;
Jiao, Guohua;
Lu, Yuanfu;
Li, Qiran

Publication type:

Article

Carrier transport mechanisms and photovoltaic characteristics of Au/toluidine blue/n-Si/Al heterojunction solar cell.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 5, p. 3592, doi. 10.1007/s10854-017-8289-0

By:

Zeyada, H. M.;
Youssif, M. I.;
El-Ghamaz, N. A.;
Nasher, M. A.

Publication type:

Article

Band alignments of O-based and HO-based amorphous LaAlO films on silicon by atomic layer deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 803, doi. 10.1007/s10854-016-5593-z

By:

Zhao, Lu;
Liu, Hongxia;
Wang, Xing;
Feng, Xingyao;
Fei, Chenxi

Publication type:

Article

Effect of sulfur on dielectric properties of Cd-Se Glassy system.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2974, doi. 10.1007/s10854-015-4118-5

By:

Ganaie, Mohsin;
Alvi, M.;
Zulfequar, M.

Publication type:

Article

Photoluminescence of sol-gel synthesized transparent amorphous semiconducting La- and Sm-codoped organo-silicate hybrid material.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 12, p. 2293, doi. 10.1007/s10854-012-0823-5

By:

Abo-Naf, S.;
Marzouk, M.;
Elwan, R.

Publication type:

Article

Study on thermal stability of electroless deposited Ni-Co-P alloy thin film.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 9, p. 1495, doi. 10.1007/s10854-011-0336-7

By:

Kumar, Anuj;
Singh, Amanpal;
Kumar, Mukesh;
Kumar, Dinesh;
Barthwal, Sumit

Publication type:

Article

Structural transformations in amorphous As xSe1− x (0 ≤ x ≤ 0.20) films.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1095, doi. 10.1007/s10854-008-9833-8

By:

Mikla, V. I.;
Mikla, V. V.

Publication type:

Article

Trap level spectroscopy in amorphous selenium-based semiconductors.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1059, doi. 10.1007/s10854-009-9951-y

By:

Mikla, V. I.;
Mikla, V. V.

Publication type:

Article

A quantitative characterization of the optical absorption spectrum associated with hydrogenated amorphous silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 10, p. 1033, doi. 10.1007/s10854-008-9825-8

By:

Orapunt, Farida;
O'Leary, Stephen K.

Publication type:

Article

Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 23, doi. 10.1007/s10854-007-9424-0

By:

Bozsoki, Peter;
Hoyer, Walter;
Kira, Mackillo;
Varga, Imre;
Thomas, Peter;
Koch, Stephan W.;
Schomerus, Henning

Publication type:

Article

Low temperature crystallization of amorphous silicon carbide thin films for p–n junction devices fabrication.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 801, doi. 10.1007/s10854-007-9452-9

By:

Hossain, Maruf;
Minseong Yun;
Korampally, Venumadhav;
Gangopadhyay, Shubhra

Publication type:

Article

Thermal quenching of the photoluminescence in amorphous silicon–carbon alloys doped with Er ions.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 243, doi. 10.1007/s10854-007-9193-9

By:

Kazitsyna-Baranovski, S.;
Weiser, G.

Publication type:

Article

Comparison of reversible photodarkening in As2S3 and As2Se3 amorphous thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 251, doi. 10.1007/s10854-007-9206-8

By:

Munzar, M.;
Tichy, L.

Publication type:

Article

Crystallization of thin-film Si monitored in real time by in-situ spectroscopic techniques.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 309, doi. 10.1007/s10854-007-9222-8

By:

Stradins, P.;
Teplin, C. W.;
Young, D. L.;
Yan, Y.;
Branz, H. M.;
Wang, Q.

Publication type:

Article

Optical properties of amorphous/crystalline ZnO nano-powder prepared by solid state reaction.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 4, p. 381, doi. 10.1007/s10854-006-9057-8

By:

Haiming Zhang;
Guoxiang Chen;
Guangwu Yang;
Jiawei Zhang;
Xiaoyuan Lu

Publication type:

Article

X-ray, SEM and magnetic properties of amorphous Fe60Nb40 alloy.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 19, p. 1377, doi. 10.1023/A:1025703831718

By:

Roy, M.;
Agarwal, V. K.

Publication type:

Article

Deterioration of aluminum induced crystallization of sputtered silicon by film stress.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 15, p. 1079, doi. 10.1023/A:1024982723808

By:

Ching-Ming Hsu;
Ming-Chang Yu

Publication type:

Article

About Some Boundary Value Problems for Fractional PDE and their Numerical Solution.

Published in:

PAMM: Proceedings in Applied Mathematics & Mechanics, 2013, v. 13, n. 1, p. 445, doi. 10.1002/pamm.201310216

By:

Jovanović, Boško;
Delić, Aleksandra;
Vulkov, Lubin

Publication type:

Article

Effect of Bi doping on the structure and conduction mechanism of amorphous GeSe films.

Published in:

Inorganic Materials, 2013, v. 49, n. 7, p. 647, doi. 10.1134/S0020168513060095

By:

Romanyuk, R.

Publication type:

Article

Mechanochemical synthesis of amorphous and crystalline magnesium diboride.

Published in:

Inorganic Materials, 2010, v. 46, n. 1, p. 22, doi. 10.1134/S0020168510010061

By:

Lomovsky, O. I.;
Golubkova, G. V.;
Dovlitova, L. S.;
Zaikovskii, V. I.;
Maly, V. I.

Publication type:

Article

Structural, electrical, and magnetic properties of R-Fe-Ge (R = Y, La, Sc) films.

Published in:

Inorganic Materials, 2009, v. 45, n. 4, p. 386, doi. 10.1134/S0020168509040104

By:

Yatsyshyn, B. P.;
Mikolaichuk, A. G.;
Freik, D. M.;
Baitsar, A. S.;
Gorelenko, Yu. K.

Publication type:

Article

Structural transformations in thin Ge2Sb2Te5 films.

Published in:

Inorganic Materials, 2009, v. 45, n. 4, p. 361, doi. 10.1134/S0020168509040050

By:

Kozyukhin, S. A.;
Sherchenkov, A. A.;
Gorshkova, E. V.;
Kudoyarova, V. Kh.;
Vargunin, A. I.

Publication type:

Article

Effect of preparation conditions on the optical and photoluminescent properties of glassy As2S3.

Published in:

Inorganic Materials, 2008, v. 44, n. 11, p. 1187, doi. 10.1134/S0020168508110071

By:

Babaev, A. A.;
Muradov, R. A.;
Sultanov, S. B.;
Askhabov, A. M.

Publication type:

Article

Retrieval of some parameters of an amorphous chalcogenide semiconductor from the temperature and field dependences of its conductivity.

Published in:

Inorganic Materials, 2008, v. 44, n. 11, p. 1190, doi. 10.1134/S0020168508110083

By:

Kozyukhin, S. A.;
Voronkov, E. N.

Publication type:

Article

Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density.

Published in:

Electronic Materials, 2025, v. 6, n. 1, p. 2, doi. 10.3390/electronicmat6010002

By:

Liu, Jiaxin;
Huang, Shan;
Xiao, Zhenyuan;
Li, Ning;
Kim, Jaekyun;
Jin, Jidong;
Zhang, Jiawei

Publication type:

Article

非晶氧化物薄膜晶体管的制备及电学性能综合性教学实验设计与实践.

Published in:

Experimental Technology & Management, 2022, v. 39, n. 8, p. 181, doi. 10.16791/j.cnki.sjg.2022.08.033

By:

许磊;
胡梦真;
宋增才;
张新楠

Publication type:

Article

Strategy to utilize amorphous phase of semiconductor toward excellent and reliable photochemical water splitting performance: Roles of interface dipole moment and reaction parallelization.

Published in:

International Journal of Energy Research, 2022, v. 46, n. 3, p. 3674, doi. 10.1002/er.7333

By:

Choi, Heechae;
Han, HyukSu;
Moon, Seong‐I;
Je, Minyeong;
Lee, Seungwoo;
Kwon, Jiseok;
Kim, Seungchul;
Lee, Kwang‐Ryeol;
Ali, Ghulam;
Mathur, Sanjay;
Paik, Ungyu;
Qiao, Shi‐Zhang;
Song, Taeseup

Publication type:

Article

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200807

By:

Wang, Pengfei;
Yang, Huan;
Li, Jiye;
Zhang, Xiaohui;
Wang, Lei;
Xiao, Juncheng;
Zhao, Bin;
Zhang, Shengdong;
Lu, Lei

Publication type:

Article

Phase‐Controlled Artificial SiZnSnO/P(VDF‐TrFE) Synaptic Devices with a High Dynamic Range for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200810

By:

Lee, Byeong Hyeon;
Lee, Ji Ye;
Kumar, Akash;
Lee, Sang Yeol

Publication type:

Article

Flexible Active Crossbar Arrays Using Amorphous Oxide Semiconductor Technology toward Artificial Neural Networks Hardware.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200642

By:

Pereira, Maria Elias;
Deuermeier, Jonas;
Figueiredo, Cátia;
Santos, Ângelo;
Carvalho, Guilherme;
Tavares, Vítor Grade;
Martins, Rodrigo;
Fortunato, Elvira;
Barquinha, Pedro;
Kiazadeh, Asal

Publication type:

Article

Self‐Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200280

By:

Zhou, Jitong;
Pan, Wengao;
Zheng, Dawei;
Liu, Fayang;
Li, Guijun;
Zhou, Xianda;
Wang, Kai;
Zhang, Shengdong;
Lu, Lei

Publication type:

Article

The Effect of the Charge Transfer Transition of the Tetravalent Terbium on the Photostability of Oxide Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200187

By:

Lan, Linfeng;
Li, Xiao;
Ding, Chunchun;
Chen, Siting;
Su, Huimin;
Huang, Bo;
Chen, Baozhong;
Zhou, Hongkun;
Peng, Junbiao

Publication type:

Article

A Fully Integrated Ferroelectric Thin‐Film‐Transistor – Influence of Device Scaling on Threshold Voltage Compensation in Displays.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100082

By:

Lehninger, David;
Ellinger, Martin;
Ali, Tarek;
Li, Songrui;
Mertens, Konstantin;
Lederer, Maximilian;
Olivio, Ricardo;
Kämpfe, Thomas;
Hanisch, Norbert;
Biedermann, Kati;
Rudolph, Matthias;
Brackmann, Varvara;
Sanctis, Shawn;
Jank, Michael P. M.;
Seidel, Konrad

Publication type:

Article

Compositional Engineering of Hf‐Doped InZnSnO Films for High‐Performance and Stability Amorphous Oxide Semiconductor Thin Film Transistors.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001216

By:

Park, Jin‐Hyeok;
Seok, Hae‐Jun;
Kim, Chan‐Hwi;
Jung, Sung Hyeon;
Cho, Hyung Koun;
Kim, Han‐Ki

Publication type:

Article

All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202000883

By:

Reinhardt, Anna;
Wenckstern, Holger;
Grundmann, Marius

Publication type:

Article

All‐Oxide Transparent Thin‐Film Transistors Based on Amorphous Zinc Tin Oxide Fabricated at Room Temperature: Approaching the Thermodynamic Limit of the Subthreshold Swing.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 10, p. 1, doi. 10.1002/aelm.202000423

By:

Lahr, Oliver;
Bar, Michael S.;
Wenckstern, Holger;
Grundmann, Marius

Publication type:

Article

Noble‐Metal‐Free Memristive Devices Based on IGZO for Neuromorphic Applications.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 10, p. 1, doi. 10.1002/aelm.202000242

By:

Pereira, Maria;
Deuermeier, Jonas;
Nogueira, Ricardo;
Carvalho, Patrícia Almeida;
Martins, Rodrigo;
Fortunato, Elvira;
Kiazadeh, Asal

Publication type:

Article

High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000195

By:

Allemang, Christopher R.;
Cho, Tae H.;
Trejo, Orlando;
Ravan, Shantam;
Rodríguez, Robin E.;
Dasgupta, Neil P.;
Peterson, Rebecca L.

Publication type:

Article

Interlayers for Improved Hole Injection in Organic Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901352

By:

Zhang, Ke;
Kotadiya, Naresh B.;
Wang, Xiao‐Ye;
Wetzelaer, Gert‐Jan A. H.;
Marszalek, Tomasz;
Pisula, Wojciech;
Blom, Paul W. M.

Publication type:

Article

Metal–Semiconductor Field‐Effect Transistors Based on the Amorphous Multi‐Anion Compound ZnON.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901066

By:

Reinhardt, Anna;
Wenckstern, Holger;
Grundmann, Marius

Publication type:

Article

2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900958

By:

Casa Branca, Nuno;
Deuermeier, Jonas;
Martins, Jorge;
Carlos, Emanuel;
Pereira, Maria;
Martins, Rodrigo;
Fortunato, Elvira;
Kiazadeh, Asal

Publication type:

Article

High‐Mobility and Air‐Stable Amorphous Semiconductor Composed of Earth‐Abundant Elements: Amorphous Zinc Oxysulfide.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 1, p. N.PAG, doi. 10.1002/aelm.201900602

By:

Zhu, Yuting;
Yamazaki, Takanori;
Chen, Zhen;
Hirose, Yasushi;
Nakao, Shoichiro;
Harayama, Isao;
Sekiba, Daiichiro;
Hasegawa, Tetsuya

Publication type:

Article

Recent Advances in Understanding the Structure and Properties of Amorphous Oxide Semiconductors.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 9, p. n/a, doi. 10.1002/aelm.201700082

By:

Medvedeva, Julia E.;
Buchholz, D. Bruce;
Chang, Robert P. H.

Publication type:

Article