Works matching DE "ALUMINUM nitride films"

Results: 98

Microstructure and Electrical Properties of Scandium-Doped Aluminum Nitride Thin Film.

Published in:

Coatings (2079-6412), 2025, v. 15, n. 5, p. 549, doi. 10.3390/coatings15050549

By:

Chen, Jiaqiang;
Zhang, Junxi;
Fan, Zhiyang;
Yu, Ping

Publication type:

Article

Synthesis of c-axis oriented AlN thin films at room temperature.

Published in:

Surface Engineering, 2017, v. 33, n. 4, p. 249, doi. 10.1080/02670844.2016.1235522

By:

Tavsanoglu, T.

Publication type:

Article

Oxidation rates of aluminium nitride thin films: effect of composition of the atmosphere.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 18, p. 13937, doi. 10.1007/s10854-017-7243-5

By:

Korbutowicz, Ryszard;
Zakrzewski, Adrian;
Rac-Rumijowska, Olga;
Stafiniak, Andrzej;
Vincze, Andrej

Publication type:

Article

Preparation of ScAlN films as a function of sputtering atmosphere.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 5, p. 4788, doi. 10.1007/s10854-016-4359-y

By:

Tang, JiaLin;
Niu, Dongwei;
Yang, Yixi;
Zhou, Dong;
Yang, Chengtao

Publication type:

Article

Effects of AlN buffer on the physical properties of GaN films grown on 6H-SiC substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 2, p. 1738, doi. 10.1007/s10854-015-3948-5

By:

Huang, Zhen;
Zhang, Yuantao;
Zhao, Baijun;
Yang, Fan;
Jiang, Junyan;
Deng, Gaoqiang;
Li, Baozhu;
Liang, Hongwei;
Chang, Yuchun;
Song, Junfeng

Publication type:

Article

Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 2, p. 2004, doi. 10.1007/s10854-015-3984-1

By:

Dai, Yiquan;
Li, Shuiming;
Gao, Hongwei;
Wang, Weihui;
Sun, Qian;
Peng, Qing;
Gui, Chengqun;
Qian, Zhengfang;
Liu, Sheng

Publication type:

Article

Aluminum nitride filled flexible silicone rubber composites for microwave substrate applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 2, p. 891, doi. 10.1007/s10854-014-2479-9

By:

Namitha, L.;
Ananthakumar, S.;
Sebastian, M.

Publication type:

Article

Investigation, characterization and effect of substrate position on thick AlN layers grown by high temperature chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 2, p. 1239, doi. 10.1007/s10854-014-2532-8

By:

Zhang, Dian;
Liu, Fa-Min;
Cai, Lu-Gang

Publication type:

Article

Effects of sputtering atmosphere on the properties of c-plane ScAlN thin films prepared on sapphire substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 1, p. 472, doi. 10.1007/s10854-014-2423-z

By:

Zhang, Yao;
Zhu, Weixin;
Zhou, Dong;
Yang, Yixi;
Yang, Chengtao

Publication type:

Article

A model for longitudinal piezoelectric coefficient measurement of the aluminum nitride thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 6, p. 2435, doi. 10.1007/s10854-014-1885-3

By:

Bi, Xiaomeng;
Wu, Yihui;
Wu, Junfeng;
Li, Haiwen;
Zhou, Lianqun

Publication type:

Article

Growth of aluminum nitride films by plasma-enhanced atomic layer deposition.

Published in:

Inorganic Materials, 2015, v. 51, n. 7, p. 728, doi. 10.1134/S0020168515070158

By:

Tarala, V.;
Altakhov, A.;
Shevchenko, M.;
Valyukhov, D.;
Lisitsyn, S.;
Martens, V.

Publication type:

Article

ANNEALING EFFECT ON VIBRATION MODES OF ALUMINUM NITRIDE THIN FILMS.

Published in:

Momento: Revista de Física, 2014, n. 48, p. 64

By:

Bernal-Correa, Roberto;
Rodríguez-García, Mario E.;
Pulzara-Mora, Álvaro

Publication type:

Article

Effect of substrate temperature and nitrogen concentration during sputtering on corrosion behaviour of AlN coatings.

Published in:

Transactions of the Institute of Metal Finishing, 2016, v. 94, n. 5, p. 250, doi. 10.1080/00202967.2016.1208384

By:

Choudhary, R. K.;
Mishra, P.;
Roychowdhury, S.;
Kain, V.

Publication type:

Article

Cost evaluation on performance of a PVD coated cutting tool during end-milling of Inconel 718 under MQL conditions.

Published in:

Transactions of the Institute of Metal Finishing, 2016, v. 94, n. 4, p. 175, doi. 10.1080/00202967.2016.1179472

By:

Kasim, M. S.;
Che Haron, C. H.;
Ghani, J. A.;
Hadi, M. A.;
Izamshah, R.;
Anand, T. J. S.;
Mohamed, S. B.

Publication type:

Article

A multi-step deposited AlN films in a DC pulsed sputtering and film characteristics classification with principal component analysis of OES data.

Published in:

International Journal of Advanced Manufacturing Technology, 2023, v. 127, n. 5/6, p. 2955, doi. 10.1007/s00170-023-11694-6

By:

Chen, Wei-Lun;
Zhou, Wei-Yu;
Yuan, Ning-Hsiu;
Yang, Shang-Shian;
Wang, Peter J.;
Lo, Hsiao-Han;
Li, Tomi T.;
Fuh, Yiin-kuen

Publication type:

Article

Residual stress classification of pulsed DC reactive sputtered aluminum nitride film via large-scale data analysis of optical emission spectroscopy.

Published in:

International Journal of Advanced Manufacturing Technology, 2022, v. 119, n. 11/12, p. 7449, doi. 10.1007/s00170-022-08714-2

By:

Lo, Hsiao-Han;
Chen, Wei-Lun;
Wang, Peter J.;
Lai, Walter;
Fuh, Yiin-Kuen;
Li, Tomi T.

Publication type:

Article

Ultrasonic response of a piezoelectric aluminum nitride film deposited on silicon.

Published in:

Instrumentation Science & Technology, 2017, v. 45, n. 2, p. 137, doi. 10.1080/10739149.2016.1206927

By:

Lemlikchi, S.;
Asmani, M.;
Djelouah, H.;
Schaaf, P.;
Hopfeld, M.;
Aouimeur, W.

Publication type:

Article

Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films.

Published in:

Optics & Spectroscopy, 2019, v. 127, n. 1, p. 36, doi. 10.1134/S0030400X19070208

By:

Novikova, N. N.;
Yakovlev, V. A.;
Klimin, S. A.;
Malin, T. V.;
Gilinsky, A. M.;
Zhuravlev, K. S.

Publication type:

Article

Structural Features of Aluminum Nitride Films Obtained by Magnetron Sputtering.

Published in:

High Energy Chemistry, 2024, v. 58, p. S429, doi. 10.1134/S0018143924701297

By:

Strunin, V. I.;
Baisova, B. T.;
Baranova, L. V.

Publication type:

Article

Phase Composition and Surface Morphology of Thin AlN Films Obtained trough Magnetron Sputtering.

Published in:

High Energy Chemistry, 2023, v. 57, p. S7, doi. 10.1134/S0018143923070056

By:

Baranova, L. V.;
Strunin, V. I.;
Baysova, B. T.;
Chirikov, N. A.

Publication type:

Article

Aluminum nitride nanophotonics for beyond-octave soliton microcomb generation and self-referencing.

Published in:

Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-25751-9

By:

Liu, Xianwen;
Gong, Zheng;
Bruch, Alexander W.;
Surya, Joshua B.;
Lu, Juanjuan;
Tang, Hong X.

Publication type:

Article

Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites.

Published in:

PLoS ONE, 2015, v. 10, n. 7, p. 1, doi. 10.1371/journal.pone.0133479

By:

Ramadan, Khaled Sayed Elbadawi;
Evoy, Stephane

Publication type:

Article

Synthesis and characterization of UV‐curable nanocellulose/ZnO/AlN acrylic flexible films: Thermal, dynamic mechanical and piezoelectric response.

Published in:

Journal of Applied Polymer Science, 2021, v. 138, n. 4, p. 1, doi. 10.1002/app.49731

By:

Signore, Maria Assunta;
De Pascali, Chiara;
Duraccio, Donatella;
Malucelli, Giulio;
Fioravanti, Ambra;
Melissano, Enrico;
Martucci, Maria Concetta;
Masieri, Maurizio;
Siciliano, Pietro;
Francioso, Luca

Publication type:

Article

Structural, Thermal and Luminescence Properties of AlN:Tm Thin Films Deposited on Silicon Substrate and Optical Fiber.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2039, doi. 10.1134/S1063782618160182

By:

Muhammad Maqbool;
Alruwaili, Amani;
Milinovic, Dunja;
Khan, Tahirzeb;
Ali, Ghafar;
Ahmad, Iftikhar

Publication type:

Article

Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 184, doi. 10.1134/S1063782618020070

By:

Lubyanskiy, Ya.;
Bondarev, A.;
Soshnikov, I.;
Bert, N.;
Zolotarev, V.;
Kirilenko, D.;
Kotlyar, K.;
Pikhtin, N.;
Tarasov, I.

Publication type:

Article

Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates.

Published in:

Semiconductors, 2016, v. 50, n. 9, p. 1261, doi. 10.1134/S1063782616090219

By:

Seredina, P.;
Goloshchapov, D.;
Lenshin, A.;
Lukin, A.;
Fedyukin, A.;
Arsentyev, I.;
Bondarev, A.;
Lubyanskiy, Y.;
Tarasov, I.

Publication type:

Article

Properties of AlN films deposited by reactive ion-plasma sputtering.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1383, doi. 10.1134/S1063782615100036

By:

Bert, N.;
Bondarev, A.;
Zolotarev, V.;
Kirilenko, D.;
Lubyanskiy, Ya.;
Lyutetskiy, A.;
Slipchenko, S.;
Petrunov, A.;
Pikhtin, N.;
Ayusheva, K.;
Arsentyev, I.;
Tarasov, I.

Publication type:

Article

Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2313, doi. 10.1007/s11664-021-08768-0

By:

Abd Rahman, Mohd Nazri;
Shuhaimi, Ahmad;
Abdul Khudus, Muhammad I. M.;
Anuar, Afiq;
Zainorin, Mohamed Zulhakim;
Talik, Noor Azrina;
Chanlek, Narong;
Abd Majid, Wan Haliza

Publication type:

Article

Fabrication and Characterization of Reactively Sputtered AlInGaN Films with a Cermet Target Containing 5% Al and 7.5% In.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 4, p. 1948, doi. 10.1007/s11664-016-5157-2

By:

Lin, Kaifan;
Kuo, Dong-Hau

Publication type:

Article

Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications.

Published in:

BMC Chemistry, 2019, v. 13, n. 1, p. N.PAG, doi. 10.1186/s13065-019-0550-6

By:

Lin, H. K.;
Huang, Y. J.;
Shih, W. C.;
Chen, Y. C.;
Chang, W. T.

Publication type:

Article

Shear-horizontal piezoelectric waves in an aluminum nitride film on a silicon substrate.

Published in:

Mechanics of Advanced Materials & Structures, 2016, v. 23, n. 7, p. 764, doi. 10.1080/15376494.2015.1029165

By:

Chen, Hui;
Wang, Ji;
Du, Jianke;
Yang, Jiashi

Publication type:

Article

AlN thin films prepared by ArF plasma assisted PLD. Role of process conditions on electronic and chemical-morphological properties.

Published in:

Applied Physics A: Materials Science & Processing, 2014, v. 114, n. 2, p. 611, doi. 10.1007/s00339-013-7632-4

By:

Cappelli, E.;
Trucchi, D.;
Orlando, S.;
Valentini, V.;
Mezzi, A.;
Kaciulis, S.

Publication type:

Article

Nitride memristors.

Published in:

Applied Physics A: Materials Science & Processing, 2012, v. 109, n. 1, p. 1, doi. 10.1007/s00339-012-7052-x

By:

Choi, Byung;
Yang, J.;
Zhang, M.-X.;
Norris, Kate;
Ohlberg, Douglas;
Kobayashi, Nobuhiko;
Medeiros-Ribeiro, Gilberto;
Williams, R.

Publication type:

Article

Thermal transient analysis of LED using carbon doped AlN film deposited on metal substrate as heat sink.

Published in:

Optical & Quantum Electronics, 2015, v. 47, n. 5, p. 1245, doi. 10.1007/s11082-014-9985-0

By:

Shanmugan, S.;
Norazlina, M.;
Mutharasu, D.

Publication type:

Article

Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution.

Published in:

Nanomaterials (2079-4991), 2023, v. 13, n. 2, p. 274, doi. 10.3390/nano13020274

By:

Shifat, A. S. M. Zadid;
Stricklin, Isaac;
Chityala, Ravi Kiran;
Aryal, Arjun;
Esteves, Giovanni;
Siddiqui, Aleem;
Busani, Tito

Publication type:

Article

Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition.

Published in:

Crystals (2073-4352), 2024, v. 14, n. 4, p. 371, doi. 10.3390/cryst14040371

By:

Hisyam, Muhammad Iznul;
Shuhaimi, Ahmad;
Norhaniza, Rizuan;
Mansor, Marwan;
Williams, Adam;
Mat Hussin, Mohd Rofei

Publication type:

Article

Design of Bulk Acoustic Wave Filters for Beidou Receiver.

Published in:

Journal of Circuits, Systems & Computers, 2015, v. 24, n. 2, p. -1, doi. 10.1142/S0218126615500188

By:

Lu, Tingting;
Wang, Shuai;
Zhang, Hao;
Xu, Lingwei;
Gulliver, T. Aaron

Publication type:

Article

Guided modes: Silicon alternative.

Published in:

Nature Photonics, 2014, v. 8, n. 5, p. 351, doi. 10.1038/nphoton.2014.102

By:

Pile, David

Publication type:

Article

Controlled Growth of Conductive AlN Thin Films by Plasma-Assisted Reactive Evaporation.

Published in:

Metallurgical & Materials Transactions. Part A, 2017, v. 48, n. 7, p. 3461, doi. 10.1007/s11661-017-4103-0

By:

Alizadeh, M.;
Goh, B.;
Rahman, S.

Publication type:

Article

Formation of Silicon (Si) Grains in AlN Thin Layer Grown on an Si(1 1 1) Substrate: Effect of Deposition Sequence<sup>#</sup>.

Published in:

Bulletin of the Korean Chemical Society, 2015, v. 36, n. 3, p. 1008, doi. 10.1002/bkcs.10190

By:

Kim, Young Heon;
Ahn, Sang Jung;
Lee, Sang Tae;
Kim, Moondeock;
Oh, Jae Eung

Publication type:

Article

Smoothing of Polycrystalline AlN Thin Films with Argon Cluster Ions.

Published in:

Technical Physics Letters, 2021, v. 47, n. 4, p. 301, doi. 10.1134/S1063785021030275

By:

Nikolaev, I. V.;
Korobeishchikov, N. G.;
Roenko, M. A.;
Geydt, P. V.;
Strunin, V. I.

Publication type:

Article

Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition.

Published in:

Technical Physics Letters, 2017, v. 43, n. 1, p. 74, doi. 10.1134/S1063785017010138

By:

Tarala, V.;
Altakhov, A.;
Ambartsumov, M.;
Martens, V.

Publication type:

Article

Modeling and Electrical Characterization of a Bilayer Pt/AlN/Sapphire One Port Resonator for Sensor Applications.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 4, p. 370, doi. 10.3390/electronics10040370

By:

Jean Claude, Asseko Ondo;
Eloi Jean Jacques, Blampain;
Gaston, N'tchayi Mbourou;
Adoum, Traore Ndama;
Elysée, Obame Ndong;
Omar, Elmazria;
Marinova, Iliana

Publication type:

Article

Optimizing the Structural, Electrical and Thermoelectric Properties of Antimony Telluride Thin Films Deposited on Aluminum Nitride-coated Stainless Steel Foil.

Published in:

Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-63954-0

By:

Ahmed, Aziz;
Han, Seungwoo

Publication type:

Article

Effects of Al and N<sub>2</sub> Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE.

Published in:

Crystals (2073-4352), 2017, v. 7, n. 5, p. 123, doi. 10.3390/cryst7050123

By:

Katsuhiro Kishimoto;
Mitsuru Funato;
Yoichi Kawakami

Publication type:

Article

Comparative Spectroscopic Study of Aluminum Nitride Grown by MOCVD in H 2 and N 2 Reaction Environment.

Published in:

Coatings (2079-6412), 2022, v. 12, n. 7, p. N.PAG, doi. 10.3390/coatings12070924

By:

Hasan, Samiul;
Jewel, Mohi Uddin;
Karakalos, Stavros G.;
Gaevski, Mikhail;
Ahmad, Iftikhar

Publication type:

Article

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer.

Published in:

Coatings (2079-6412), 2021, v. 11, n. 9, p. 1063, doi. 10.3390/coatings11091063

By:

Riah, Badis;
Camus, Julien;
Ayad, Abdelhak;
Rammal, Mohammad;
Zernadji, Raouia;
Rouag, Nadjet;
Djouadi, Mohamed Abdou

Publication type:

Article

Current Research in Pulsed Laser Deposition.

Published in:

2021

By:

Duta, Liviu;
Popescu, Andrei C.

Publication type:

Editorial

Pulsed Laser Deposition of Aluminum Nitride Films: Correlation between Mechanical, Optical, and Structural Properties.

Published in:

Coatings (2079-6412), 2019, v. 9, n. 3, p. 195, doi. 10.3390/coatings9030195

By:

Kolaklieva, Lilyana;
Chitanov, Vasiliy;
Szekeres, Anna;
Antonova, Krassimira;
Terziyska, Penka;
Fogarassy, Zsolt;
Petrik, Peter;
Mihailescu, Ion N.;
Duta, Liviu

Publication type:

Article

Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach.

Published in:

Coatings (2079-6412), 2017, v. 7, n. 9, p. 136, doi. 10.3390/coatings7090136

By:

Boichot, Raphaël;
Danying Chen;
Mercier, Frédéric;
Baillet, Francis;
Giusti, Gaël;
Coughlan, Thomas;
Chubarov, Mikhail;
Pons, Michel

Publication type:

Article