Works matching DE "ALUMINUM gallium nitride"

Results: 303

Simulation and modeling of gallium nitride high-electron mobility transistors for non-alloyed ohmic contacts.

Published in:

International Journal of Nanoelectronics & Materials, 2025, v. 18, n. 2, p. 222, doi. 10.58915/ijneam.v18i2.2066

By:

Tung Kok Siong;
Packeer Mohamed, Mohamed Fauzi;
Abd Rahman, Siti Fatimah;
Syamsul, Mohd;
Abu Bakar, Ahmad Shuhaimi;
Abd Rahim, Alhan Farhanah

Publication type:

Article

Aluminium and Gallium Silylimides as Nitride Sources**.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 66, p. 1, doi. 10.1002/chem.202302512

By:

Heilmann, Andreas;
Saddington, Artemis M.;
Goicoechea, Jose M.;
Aldridge, Simon

Publication type:

Article

Phosphorus implantation of Mg-doped (Al)GaN heterostructures: structural examination and depth profiling.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 20, p. 17892, doi. 10.1007/s10854-020-04342-2

By:

Piętak, Karolina;
Złotnik, Sebastian;
Rozbiegała, Ewelina;
Michałowski, Paweł P.;
Wójcik, Marek;
Gaca, Jarosław;
Rudziński, Mariusz

Publication type:

Article

Simulation and fabrication of N-polar GaN-based blue-green light-emitting diodes with p-type AlGaN electron blocking layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 11, p. 9321, doi. 10.1007/s10854-018-8962-y

By:

Deng, Gaoqiang;
Zhang, Yuantao;
Yu, Ye;
Yan, Long;
Li, Pengchong;
Han, Xu;
Chen, Liang;
Zhao, Degang;
Du, Guotong

Publication type:

Article

Growth of AlGaN-based multiple quantum wells on SiC substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 9, p. 7756, doi. 10.1007/s10854-018-8772-2

By:

Han, Xu;
Zhang, Yuantao;
Li, Pengchong;
Yan, Long;
Deng, Gaoqiang;
Chen, Liang;
Yu, Ye;
Zhao, Degang;
Yin, Jingzhi

Publication type:

Article

Interfacial and electrical characteristics of tetragonal HfO2/Al2O3 multilayer grown on AlGaN/GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 9, p. 7644, doi. 10.1007/s10854-018-8757-1

By:

Cao, Duo;
Liu, Feng;
Shi, Xi;
Shi, Hui;
Zheng, Li;
Shen, Lingyan;
Cheng, Xinhong;
Yu, Yuehui;
Li, Xiaolong;
Shi, Wangzhou

Publication type:

Article

Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 4, p. 3200, doi. 10.1007/s10854-016-5909-z

By:

Arslan, Engin;
Öztürk, Mustafa;
Tıraş, Engin;
Tıraş, Tülay;
Özçelik, Süleyman;
Özbay, Ekmel

Publication type:

Article

Cesium, oxygen coadsorption on AlGaN(0001) surface: experimental research and ab initio calculations.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 4, p. 2181, doi. 10.1007/s10854-015-2665-4

By:

Yang, Mingzhu;
Chang, Benkang;
Wang, Meishan

Publication type:

Article

2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current.

Published in:

NPJ 2D Materials & Applications, 2019, v. 3, n. 1, p. N.PAG, doi. 10.1038/s41699-019-0106-6

By:

Qian, Qingkai;
Lei, Jiacheng;
Wei, Jin;
Zhang, Zhaofu;
Tang, Gaofei;
Zhong, Kailun;
Zheng, Zheyang;
Chen, Kevin J.

Publication type:

Article

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs.

Published in:

Active & Passive Electronic Components, 2012, p. 1, doi. 10.1155/2012/806253

By:

Danqiong Hou;
Bilbro, Griff L.;
Trew, Robert J.

Publication type:

Article

A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current.

Published in:

Active & Passive Electronic Components, 2012, p. 1, doi. 10.1155/2012/493239

By:

Christiansen, Bradley D.;
Heller, Eric R.;
Coutu Jr., Ronald A.;
Vetury, Ramakrishna;
Shealy, Jeffrey B.

Publication type:

Article

Enhancing Carriers' Confinement by Introducing BAlGaN Quantum Barriers for the Better Optoelectronic Performance of Deep UV LEDs.

Published in:

Photonics, 2025, v. 12, n. 1, p. 49, doi. 10.3390/photonics12010049

By:

Bashir, Jamshad;
Usman, Muhammad;
Arteev, Dmitri Sergeevich;
Noor, Zoya;
Ali, Ahmed

Publication type:

Article

Tunable Radiation Patterns on Temperature-Dependent Materials.

Published in:

Photonics, 2024, v. 11, n. 7, p. 646, doi. 10.3390/photonics11070646

By:

Cheng, Lin;
Wu, Fan;
Huang, Kun

Publication type:

Article

The influence of the quantum-confined Stark effect on InGaN/AlGaN quantum dots.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 5, p. n/a, doi. 10.1002/pssb.201600325

By:

Zakizade, E.;
Figge, S.;
Laurus, C.;
Mehrtens, T.;
Rosenauer, A.;
Hommel, D.;
Gutowski, J.;
Sebald, K.

Publication type:

Article

The influence of the quantum-confined Stark effect on InGaN/AlGaN quantum dots (Phys. Status Solidi B 5/2017).

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 5, p. n/a, doi. 10.1002/pssb.201770227

By:

Zakizade, E.;
Figge, S.;
Laurus, C.;
Mehrtens, T.;
Rosenauer, A.;
Hommel, D.;
Gutowski, J.;
Sebald, K.

Publication type:

Article

Pseudomorphic ZnO-based heterostructures: From polar through all semipolar to nonpolar orientations.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 2, p. 351, doi. 10.1002/pssb.201552535

By:

Grundmann, Marius;
Zúñiga‐Pérez, Jesús

Publication type:

Article

MATLAB simulation based study on poliovirus sensing through one-dimensional photonic crystal with defect.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-35595-6

By:

Aly, Arafa H.;
Mohamed, B. A.;
Awasthi, S. K.;
Abdallah, Suhad Ali Osman;
Amin, A. F.

Publication type:

Article

Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures.

Published in:

Philosophical Magazine Letters, 2015, v. 95, n. 6, p. 333, doi. 10.1080/09500839.2015.1062154

By:

Nakano, Yoshitaka;
Irokawa, Yoshihiro;
Sumiya, Masatomo

Publication type:

Article

Electron Velocity Enhancement in Polarization-doped AlGaN.

Published in:

Materials Science / Medziagotyra, 2013, v. 19, n. 2, p. 129, doi. 10.5755/j01.ms.19.2.1797

By:

ARDARAVIČIUS, Linas;
KIPRIJANOVIČ, Oleg;
LIBERIS, Juozapas

Publication type:

Article

High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment.

Published in:

Advances in Condensed Matter Physics, 2015, v. 2015, p. 1, doi. 10.1155/2015/267680

By:

Yang, Chao;
Xiong, Jiayun;
Wei, Jie;
Wu, Junfeng;
Zhang, Bo;
Luo, Xiaorong

Publication type:

Article

High Conductivity of Mg-Doped Al0.3Ga0.7N with Al0.4Ga0.6N/A1N Superlattice Structure.

Published in:

Advances in Condensed Matter Physics, 2014, p. 1, doi. 10.1155/2014/784918

By:

Zhiming Li;
Jinping Li;
Haiying Jiang;
Yanbin Han;
Yingjie Xia;
Yimei Huang;
Jianqin Yin;
Shigang Hu

Publication type:

Article

Modeling of Enhancement Mode HEMT with Π-Gate Optimization for High Power Applications.

Published in:

International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S0129156423500064

By:

Hossain, Md Maruf;
Shuvo, Md Maruf Hossain;
Titirsha, Twisha;
Islam, Syed Kamrul

Publication type:

Article

Preface.

Published in:

International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S0129156419020014

By:

Singisetti, Uttam;
Razzak, Towhidur;
Zhang, Yuewei

Publication type:

Article

Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system.

Published in:

Journal of Applied Crystallography, 2013, v. 46, n. 1, p. 120, doi. 10.1107/S0021889812043051

By:

Lazarev, S.;
Barchuk, M.;
Bauer, S.;
Forghani, K.;
Holý, V.;
Scholz, F.;
Baumbach, T.

Publication type:

Article

RF characteristics of 150-nm AlGaN/GaN high electron mobility transistors fabricated using i-line stepper lithography.

Published in:

Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 10, p. 1, doi. 10.1049/ell2.12798

By:

Yuji Ando;
Hidemasa Takahashi;
Ryutaro Makisako;
Akio Wakejima;
Jun Suda

Publication type:

Article

high metal channel.

Published in:: Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 23, p. 1307, doi. 10.1049/el.2018.7477
Publication type:: Article

High-speed FP GaN HEMT with fT/fMAX of 95/200 GHz.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 10, p. 657, doi. 10.1049/el.2018.0417

By:

Moon, J. S.;
Grabar, R.;
Antcliffe, M.;
Fung, H.;
Tang, Y.;
Tai, H.

Publication type:

Article

GaN-based FinFET with double-channel AlGaN/GaN heterostructure.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 5, p. 313, doi. 10.1049/el.2017.3934

By:

Chong Wang;
Xin Wang;
Xuefeng Zheng;
Qing He;
Ji Wu;
Ye Tian;
Wei Mao;
Xiaohua Ma;
Yue Hao

Publication type:

Article

Hydrogen gas sensor of Pd-functionalised AlGaN/GaN heterostructure with high sensitivity and low-power consumption.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 17, p. 1200, doi. 10.1049/el.2017.2107

By:

Choi, J.-H.;
Jo, M.-G.;
Han, S.-W.;
Kim, H.;
Kim, S.-H.;
Jang, S.;
Kim, J.-S.;
Cha, H.-Y.

Publication type:

Article

Simulation and Analysis of n-Type Electron Blocking Layers in GaN-Based Light-Emitting Diodes.

Published in:

Mathematical Modelling of Engineering Problems, 2024, v. 11, n. 11, p. 2912, doi. 10.18280/mmep.111104

By:

Tani, Wassila Kazi;
Khedim, Siham;
Amara, Sofiane

Publication type:

Article

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors.

Published in:

Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-73977-2

By:

Besendörfer, Sven;
Meissner, Elke;
Medjdoub, Farid;
Derluyn, Joff;
Friedrich, Jochen;
Erlbacher, Tobias

Publication type:

Article

Simulation Study of Aluminum Nitride TrenchFETs with Polarization‐Induced Doping.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400045

By:

Faber, Samuel;
Römer, Friedhard;
Witzigmann, Bernd

Publication type:

Article

Investigation of Three‐Channel Heterostructure and High‐Electron‐Mobility Transistor with Quaternary In0.1Al0.5Ga0.4N Barrier.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 14, p. 1, doi. 10.1002/pssa.202400239

By:

Li, Ang;
Wang, Chong;
He, Yunlong;
Zhang, Wentao;
Zheng, Xuefeng;
Ma, Xiaohua;
Liu, Kai;
Hao, Yue

Publication type:

Article

Progress and Outlook of 10% Efficient AlGaN‐Based (290–310 nm) Band UVB LEDs.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202470025

By:

Khan, M. Ajmal;
Yamada, Yoichi;
Hirayama, Hideki

Publication type:

Article

Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202370036

By:

Wu, Jui-Sheng;
Weng, You-Chen;
Yang, Tsung-Ying;
Wu, Chia-Hsun;
Lee, Chih-Chieh;
Iwai, Hiroshi;
Chang, Edward Yi

Publication type:

Article

High‐Performance AlGaN‐Based Solar‐Blind UV Photodetectors for Sensing Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 18, p. 1, doi. 10.1002/pssa.202100207

By:

Chen, Yiping;
Zheng, Chaohong;
Chen, Yiren

Publication type:

Article

About 335 nm Ultraviolet Emissions Obtained from Simple Metal–Insulator–Semiconductor Light‐Emitting Tunnel Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 2, p. 1, doi. 10.1002/pssa.202000524

By:

Lin, Chen-Sheng;
Allsopp, Duncan W. E.;
Cavanagh, Kate;
Tsui, Hei Chit Leo;
Yu, Ling-Shan;
Wang, Wang-Nan;
Mihai, Andrei;
Zou, Bin;
Moram, Michelle A.

Publication type:

Article

Analysis of Spontaneous Subpeak Emission from the Guide Layers of the Ultraviolet‐B Laser Diode Structure Containing Composition‐Graded p‐AlGaN Cladding Layers.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 14, p. 1, doi. 10.1002/pssa.201900864

By:

Sato, Kosuke;
Yasue, Shinji;
Ogino, Yuya;
Iwaya, Motoaki;
Takeuchi, Tetsuya;
Kamiyama, Satoshi;
Akasaki, Isamu

Publication type:

Article

Ambient Temperature–Corrected Mechanical Stress Mapping of Gallium Nitride and Aluminum Indium Gallium Phosphide Films by Raman Scattering Spectroscopy for Characterization of Light‐Emitting Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900776

By:

Guo, Xiaoru;
Mughal, Asad;
Dunphy, Darren;
Stone, Gregory;
Miller, David;
Huh, Sungwook

Publication type:

Article

Ferroelectric Polarization Switching Behavior of Hf0.5Zr0.5O2 Gate Dielectrics on Gallium Nitride High‐Electron‐Mobility‐Transistor Heterostructures.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900717

By:

Wu, Chunlei;
Ye, Hansheng;
Grisafe, Benjamin;
Datta, Suman;
Fay, Patrick

Publication type:

Article

Ni/Ag Schottky contacts on Al 0.11 Ga 0.89 N grown on Si (1 1 1) substrate by plasma-assisted MBE.

Published in:

Composite Interfaces, 2015, v. 22, n. 2, p. 127, doi. 10.1080/15685543.2015.996471

By:

Mohd Yusoff, M.Z.;
Hassan, Z.;
Abu Hassan, H.;
Abdullah, M.J.

Publication type:

Article

SPSPT Switch Based AlN/GaN/AlGaN HEMT on Ku to V-Band for Satellite Application.

Published in:

Journal of Integrated Circuits & Systems, 2024, v. 19, n. 3, p. 1, doi. 10.29292/jics.v19i3.885

By:

IRID, S-M.;
KHAOUANI, M.;
FOUR, I.;
KOURDI, Z.;
AZZOUG, O.

Publication type:

Article

TECHNOSCAN: FROM NEWSPAPERS, MAGAZINES, AND TRADE JOURNALS.

Published in:: TERI Information Digest on Energy & Environment (TIDEE), 2021, v. 20, n. 1, p. 31
Publication type:: Article

Performance Enhancement of Normally-OFF AlGaN/GaN HEMT using Delta-doped GaN cap Layer.

Published in:

Semiconductors, 2025, v. 59, n. 4, p. 374, doi. 10.1134/S1063782624601456

By:

Raman, Ashish;
Krishna, K Sumanth;
Ranjan, Ravi;
Singh, Sarabdeep

Publication type:

Article

On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2020, v. 30, n. 6, p. 1, doi. 10.1002/mmce.22196

By:

Jarndal, Anwar;
Arivazhagan, L.;
Nirmal, D.

Publication type:

Article

AlGaN/GaN HEMTs on SiC and Si substrates: A review from the small-signal-modeling's perspective.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2014, v. 24, n. 3, p. 389, doi. 10.1002/mmce.20772

By:

Jarndal, Anwar

Publication type:

Article

A novel method for the fabrication of AlGaN/GaN HEMTs on Si (111) substrates.

Published in:

International Journal of Advanced Manufacturing Technology, 2013, v. 67, n. 5-8, p. 1491, doi. 10.1007/s00170-012-4583-4

By:

Wang, Cong;
Cho, Sung;
Lee, Won;
Kim, Nam

Publication type:

Article

Linearity improvement in E-mode ferroelectric GaN MOS-HEMT using dual gate technology.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 6, p. 618, doi. 10.1049/mnl.2018.5499

By:

Kumar Panda, Deepak;
Lenka, Trupti Ranjan

Publication type:

Article

Etched Al0.32Ga0.68N/GaN HEMTs with high output current and breakdown voltage (>600 V).

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 5, p. 676, doi. 10.1049/mnl.2017.0651

By:

Baoxing Duan;
Shenlong Xie;
Haijun Guo;
Yintang Yang

Publication type:

Article

Enhancement-mode AlGaN/GaN HEMTs with optimised electric field using a partial GaN cap layer.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 10, p. 763, doi. 10.1049/mnl.2017.0042

By:

Haijun Guo;
Baoxing Duan;
Shenlong Xie;
Song Yuan;
Yintang Yang

Publication type:

Article