Works matching DE "ALUMINUM gallium nitride"
Results: 296
Single-Particle Radiation Sensitivity of Ultrawide-Bandgap Semiconductors to Terrestrial Atmospheric Neutrons.
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- Crystals (2073-4352), 2025, v. 15, n. 2, p. 186, doi. 10.3390/cryst15020186
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Aluminium and Gallium Silylimides as Nitride Sources**.
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- Chemistry - A European Journal, 2023, v. 29, n. 66, p. 1, doi. 10.1002/chem.202302512
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AlGaN devices and growth of device structures.
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- Journal of Materials Science, 2015, v. 50, n. 9, p. 3267, doi. 10.1007/s10853-015-8878-3
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Polarized Raman and photoluminescence studies of a sub-micron sized hexagonal AlGaN crystallite for structural and optical properties.
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- Journal of Raman Spectroscopy, 2016, v. 47, n. 6, p. 656, doi. 10.1002/jrs.4877
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AlGaN Heterostructure Optimization for Photodetectors.
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- Journal of Nano- & Electronic Physics, 2016, v. 8, n. 3, p. 1, doi. 10.21272/jnep.8(3).03036
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Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT.
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- Journal of Nano- & Electronic Physics, 2015, v. 7, n. 1, p. 01006-1
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Medium Power X-Band LNA in 0.25 μm GaN Technology.
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- International Journal of Microwave & Optical Technology, 2017, v. 12, n. 4, p. 275
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Analytical Model for Output and Transfer Characteristics of AlGaN/GaN Based HEMT's.
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- Journal of Active & Passive Electronic Devices, 2013, v. 8, n. 2/3, p. 131
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Polarized Infrared Reflectance Studies for Wurtzite Al<sub>0.06</sub>Ga<sub>0.94</sub>N Epilayer on Sapphire Grown by MBE.
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- International Review of Physics, 2013, v. 7, n. 1, p. 36
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Defect Research of InGaN Based on Blue LED Structures Using Reciprocal Space Mapping.
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- Gazi University Journal of Science, 2015, v. 28, n. 3, p. 365
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Linearity improvement in E-mode ferroelectric GaN MOS-HEMT using dual gate technology.
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- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 6, p. 618, doi. 10.1049/mnl.2018.5499
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Etched Al<sub>0.32</sub>Ga<sub>0.68</sub>N/GaN HEMTs with high output current and breakdown voltage (>600 V).
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 5, p. 676, doi. 10.1049/mnl.2017.0651
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Enhancement-mode AlGaN/GaN HEMTs with optimised electric field using a partial GaN cap layer.
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- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 10, p. 763, doi. 10.1049/mnl.2017.0042
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Design optimisation of AlGaN/GaN metal insulator semiconductor high electron mobility transistor with high-K/low-K compound gate dielectric layer for millimeter-wave application.
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- Micro & Nano Letters (Wiley-Blackwell), 2016, v. 11, n. 9, p. 503, doi. 10.1049/mnl.2016.0370
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0.25 μm AlGaN/GaN HEMT 소자 및 9 GHz 대역 전력증폭기.
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- Journal of Korean Institute of Electromagnetic Engineering & Science / Han-Guk Jeonjapa Hakoe Nonmunji, 2016, v. 27, n. 1, p. 76, doi. 10.5515/KJKIEES.2016.27.1.76
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Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-52067-y
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Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures.
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- Philosophical Magazine Letters, 2015, v. 95, n. 6, p. 333, doi. 10.1080/09500839.2015.1062154
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High Mg effective incorporation in Al-rich AlGaN by periodic repetition of ultimate V/III ratio conditions.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-40
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Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-58
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Investigation of quadratic electro-optic effects and electro-absorption process in GaN/AlGaN spherical quantum dot.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-131
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High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-433
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Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-474
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TECHNOSCAN: FROM NEWSPAPERS, MAGAZINES, AND TRADE JOURNALS.
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- TERI Information Digest on Energy & Environment (TIDEE), 2021, v. 20, n. 1, p. 31
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- Article
MATLAB simulation based study on poliovirus sensing through one-dimensional photonic crystal with defect.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-35595-6
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AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects.
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- Micromachines, 2020, v. 11, n. 2, p. 125, doi. 10.3390/mi11020125
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SPSPT Switch Based AlN/GaN/AlGaN HEMT on Ku to V-Band for Satellite Application.
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- Journal of Integrated Circuits & Systems, 2024, v. 19, n. 3, p. 1, doi. 10.29292/jics.v19i3.885
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Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature.
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- Nature Nanotechnology, 2015, v. 10, n. 2, p. 140, doi. 10.1038/nnano.2014.308
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380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure.
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- ETRI Journal, 2013, v. 35, n. 4, p. 566, doi. 10.4218/etrij.13.1912.0029
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Thermoelectrics: Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering (Adv. Funct. Mater. 22/2018).
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- Advanced Functional Materials, 2018, v. 28, n. 22, p. 1, doi. 10.1002/adfm.201870152
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Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering.
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- Advanced Functional Materials, 2018, v. 28, n. 22, p. 1, doi. 10.1002/adfm.201705823
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RF characteristics of 150-nm AlGaN/GaN high electron mobility transistors fabricated using i-line stepper lithography.
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- Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 10, p. 1, doi. 10.1049/ell2.12798
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Defects and stresses in MBE-grown GaN and AlGaN layers doped by silicon using silane.
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- Crystallography Reports, 2013, v. 58, n. 7, p. 1023, doi. 10.1134/S106377451307016X
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Low Temperature (Down to 6 K) and Quantum Transport Characteristics of Stacked Nanosheet Transistors with a High-K/Metal Gate-Last Process.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 11, p. 916, doi. 10.3390/nano14110916
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Nanotribological Characteristics of the Al Content of Al x Ga 1−x N Epitaxial Films.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 21, p. 2884, doi. 10.3390/nano13212884
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(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 17, p. 2404, doi. 10.3390/nano13172404
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Hillock Related Degradation Mechanism for AlGaN-Based UVC LEDs.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 9, p. 1562, doi. 10.3390/nano13091562
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Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 8, p. 1382, doi. 10.3390/nano13081382
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The Features of Phase Stability of GaN and AlN Films at Nanolevel.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 1, p. 8, doi. 10.3390/nano11010008
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Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.
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- Nanomaterials (2079-4991), 2019, v. 9, n. 11, p. 1634, doi. 10.3390/nano9111634
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Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga2O3/Ag/Ga2O3 Transparent Conductive Electrode.
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- Nanomaterials (2079-4991), 2019, v. 9, n. 1, p. 66, doi. 10.3390/nano9010066
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Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor.
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- Energies (19961073), 2021, v. 14, n. 8, p. 2302, doi. 10.3390/en14082302
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Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system.
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- Journal of Applied Crystallography, 2013, v. 46, n. 1, p. 120, doi. 10.1107/S0021889812043051
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MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al<sub>2</sub>O<sub>3</sub>.
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- Semiconductors, 2018, v. 52, n. 16, p. 2107, doi. 10.1134/S1063782618160170
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Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlGaN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy.
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- Semiconductors, 2018, v. 52, n. 2, p. 221, doi. 10.1134/S1063782618020136
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Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes.
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- Semiconductors, 2017, v. 51, n. 9, p. 1224, doi. 10.1134/S1063782617090184
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High-voltage MIS-gated GaN transistors.
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- Semiconductors, 2017, v. 51, n. 9, p. 1229, doi. 10.1134/S106378261709010X
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effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis.
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- Semiconductors, 2016, v. 50, n. 10, p. 1383, doi. 10.1134/S1063782616100237
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Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ SiN passivation.
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- Semiconductors, 2016, v. 50, n. 10, p. 1416, doi. 10.1134/S1063782616100225
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Increase in the diffusion length of minority carriers in AlGaN alloys ( = 0-0.1) fabricated by ammonia molecular beam epitaxy.
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- Semiconductors, 2015, v. 49, n. 10, p. 1285, doi. 10.1134/S1063782615100140
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Formation of Ta/Ti/Al/Mo/Au ohmic contacts to an AlGaN/AlN/GaN heterostructure grown on a silicon substrate.
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- Semiconductors, 2014, v. 48, n. 3, p. 387, doi. 10.1134/S1063782614030208
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