Works matching DE "ALUMINUM gallium nitride"

Results: 308

Adsorption Characteristics of an AlGaN/GaN Heterojunction on Potassium Ions.

Published in:

Molecules, 2025, v. 30, n. 13, p. 2669, doi. 10.3390/molecules30132669

By:

Dong, Yan;
Li, Mengmeng;
Liu, Yanli;
Lei, Jianming;
Bai, Haineng;
Sun, Yanmei;
Chen, Dunjun;
Zhu, Dongjie;
Wang, Rigao;
Sun, Yi

Publication type:

Article

Structural Design and Optoelectronic Performance Study of Heterojunction Light‐Emitting Transistor.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 22, n. 10, p. 1, doi. 10.1002/pssa.202400923

By:

Lin, Juncheng;
Su, Wenjuan;
Chen, Chao;
Lin, Yibin;
Ye, Jinyu;
Zhou, Xiongtu;
Guo, Tailiang;
Wu, Chaoxing;
Zhang, Yongai

Publication type:

Article

UV-Based Technologies for SARS-CoV2 Inactivation: Status and Perspectives.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 14, p. 1703, doi. 10.3390/electronics10141703

By:

Trivellin, Nicola;
Piva, Francesco;
Fiorimonte, Davide;
Buffolo, Matteo;
De Santi, Carlo;
Orlandi, Viviana Teresa;
Dughiero, Fabrizio;
Meneghesso, Gaudenzio;
Zanoni, Enrico;
Meneghini, Matteo

Publication type:

Article

3.3-kV 4H-SiC Split-Gate DMOSFET with Floating p+ Polysilicon for High-Frequency Applications.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 6, p. 659, doi. 10.3390/electronics10060659

By:

Cha, Kyuhyun;
Yoon, Jongwoon;
Kim, Kwangsoo;
Zhao, Qing-Tai

Publication type:

Article

Application of Smart Condensed H-Adsorption Nanocomposites in Batteries: Energy Storage Systems and DFT Computations.

Published in:

Computation, 2024, v. 12, n. 12, p. 234, doi. 10.3390/computation12120234

By:

Mollaamin, Fatemeh;
Monajjemi, Majid

Publication type:

Article

AlGaN Heterostructure Optimization for Photodetectors.

Published in:

Journal of Nano- & Electronic Physics, 2016, v. 8, n. 3, p. 1, doi. 10.21272/jnep.8(3).03036

By:

Didenko, S. I.;
Rabinovich, О. I.;
Legotin, S. A.;
Fedorchenko, I. V.;
Krasnov, А. А.;
Osipov, Yu. V.;
Melnik, M. S.;
Sergeev, K. A.

Publication type:

Article

Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT.

Published in:

Journal of Nano- & Electronic Physics, 2015, v. 7, n. 1, p. 01006-1

By:

Das, Palash;
Biswas, Dhrubes

Publication type:

Article

Simulation Study of Aluminum Nitride TrenchFETs with Polarization‐Induced Doping.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400045

By:

Faber, Samuel;
Römer, Friedhard;
Witzigmann, Bernd

Publication type:

Article

Investigation of Three‐Channel Heterostructure and High‐Electron‐Mobility Transistor with Quaternary In0.1Al0.5Ga0.4N Barrier.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 14, p. 1, doi. 10.1002/pssa.202400239

By:

Li, Ang;
Wang, Chong;
He, Yunlong;
Zhang, Wentao;
Zheng, Xuefeng;
Ma, Xiaohua;
Liu, Kai;
Hao, Yue

Publication type:

Article

Progress and Outlook of 10% Efficient AlGaN‐Based (290–310 nm) Band UVB LEDs.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202470025

By:

Khan, M. Ajmal;
Yamada, Yoichi;
Hirayama, Hideki

Publication type:

Article

Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202370036

By:

Wu, Jui-Sheng;
Weng, You-Chen;
Yang, Tsung-Ying;
Wu, Chia-Hsun;
Lee, Chih-Chieh;
Iwai, Hiroshi;
Chang, Edward Yi

Publication type:

Article

An Analytical Two-Dimensional C-V Model of AlGaN/GaN MODFET for High Speed Circuit Applications.

Published in:

IUP Journal of Telecommunications, 2013, v. 5, n. 4, p. 49

By:

Ramnish;
Arya, Sandeep K.;
Ahlawat, Anil

Publication type:

Article

Free polaron energy levels in AlGaN/AlGaN triangle quantum well structures.

Published in:

Modern Physics Letters B, 2017, v. 31, n. 17, p. -1, doi. 10.1142/S0217984917501871

By:

Pan, Hong Yu;
Zhao, Feng Qi

Publication type:

Article

High radiative recombination in GaN-based yellow light-emitting diodes.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2022, v. 36, n. 22, p. 1, doi. 10.1142/S0217979222501399

By:

Khan, Sibghatullah;
Usman, Muhammad;
Ali, Shazma;
Rasheed, Saad;
Saeed, Sana

Publication type:

Article

Defect Research of InGaN Based on Blue LED Structures Using Reciprocal Space Mapping.

Published in:

Gazi University Journal of Science, 2015, v. 28, n. 3, p. 365

By:

BAŞ, Y.;
TAMER, M.;
GÜLTEKİN, A.;
ÖZTÜRK, M. K.;
ALTUNTAS, H.;
ÖZÇELIK, S.;
ÖZBAY, E.

Publication type:

Article

Effects of Electron Blocking Layer Thickness on the Electrical and Optical Properties of AlGaN-Based Deep-Ultraviolet Light-Emitting Diode.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 8, p. 4802, doi. 10.1007/s11664-024-11190-x

By:

Hairol Aman, Mohammad Amirul;
Ahmad Noorden, Ahmad Fakhrurrazi;
Abdul Kadir, Muhammad Zamzuri;
Danial, Wan Hazman;
Daud, Suzairi

Publication type:

Article

Effects of Pre-Metallization on the MOCVD Growth and Properties of Ge-doped AlGaN on AlN/Sapphire Templates.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 2, p. 1484, doi. 10.1007/s11664-022-10104-z

By:

Mirabito, Timothy;
Wang, Ke;
Redwing, Joan M.

Publication type:

Article

Effects of Al Preflow on the Uniformity of an AlN Nucleation Layer and GaN Grown on Si (111) Substrate.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 6, p. 3342, doi. 10.1007/s11664-022-09560-4

By:

Ma, Jinbang;
Zhang, Yachao;
Yao, Yixin;
Zhang, Tao;
Li, Yifan;
Feng, Qian;
Bi, Zhen;
Zhang, Jincheng;
Hao, Yue

Publication type:

Article

A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 3, p. 1215, doi. 10.1007/s11664-021-09367-9

By:

Fletcher, A. S. Augustine;
Nirmal, D.;
Arivazhagan, L.;
Ajayan, J.;
Raj, Merlin Gilbert;
Hamza, K. Husna;
Murugapandiyan, P.;
Natarajan, Ramkumar

Publication type:

Article

High Radiative Recombination Rate of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with AlInGaN/AlInN/AlInGaN Tunnel Electron Blocking Layer.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 10, p. 5612, doi. 10.1007/s11664-021-09086-1

By:

Jamil, Tariq;
Usman, Muhammad;
Jamal, Habibullah;
Khan, Sibghatullah;
Rasheed, Saad;
Ali, Shazma

Publication type:

Article

Aluminium and Gallium Silylimides as Nitride Sources**.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 66, p. 1, doi. 10.1002/chem.202302512

By:

Heilmann, Andreas;
Saddington, Artemis M.;
Goicoechea, Jose M.;
Aldridge, Simon

Publication type:

Article

AlGaN devices and growth of device structures.

Published in:

Journal of Materials Science, 2015, v. 50, n. 9, p. 3267, doi. 10.1007/s10853-015-8878-3

By:

Jones, K.;
Chow, T.;
Wraback, M.;
Shatalov, M.;
Sitar, Z.;
Shahedipour, F.;
Udwary, K.;
Tompa, G.

Publication type:

Article

A novel method for the fabrication of AlGaN/GaN HEMTs on Si (111) substrates.

Published in:

International Journal of Advanced Manufacturing Technology, 2013, v. 67, n. 5-8, p. 1491, doi. 10.1007/s00170-012-4583-4

By:

Wang, Cong;
Cho, Sung;
Lee, Won;
Kim, Nam

Publication type:

Article

Impact of Inhomogeneous Offcut Angles of GaN Native Substrates on Lateral Current Modulation in AlGaN Barrier Layers.

Published in:

Crystal Research & Technology, 2025, v. 60, n. 6, p. 1, doi. 10.1002/crat.202400245

By:

Faraji, Sepideh;
Meissner, Elke;
Besendörfer, Sven;
Miersch, Christian;
Weingärtner, Roland;
Beyer, Franziska C.;
Friedrich, Jochen

Publication type:

Article

基于GaN HEMT的双向DC-DC变换器系统损耗分析.

Published in:

Journal of Tiangong University, 2020, v. 39, n. 2, p. 61, doi. 10.3969/j.issn.1671-024x.2020.02.010

By:

高圣伟;
祁树岭;
孙醒涛;
贺琛;
董晨名

Publication type:

Article

RF characteristics of 150-nm AlGaN/GaN high electron mobility transistors fabricated using i-line stepper lithography.

Published in:

Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 10, p. 1, doi. 10.1049/ell2.12798

By:

Yuji Ando;
Hidemasa Takahashi;
Ryutaro Makisako;
Akio Wakejima;
Jun Suda

Publication type:

Article

high metal channel.

Published in:: Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 23, p. 1307, doi. 10.1049/el.2018.7477
Publication type:: Article

2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current.

Published in:

NPJ 2D Materials & Applications, 2019, v. 3, n. 1, p. N.PAG, doi. 10.1038/s41699-019-0106-6

By:

Qian, Qingkai;
Lei, Jiacheng;
Wei, Jin;
Zhang, Zhaofu;
Tang, Gaofei;
Zhong, Kailun;
Zheng, Zheyang;
Chen, Kevin J.

Publication type:

Article

Growth of SiC, AlN, and GaN Films on Silicon Parts of Arbitrary Geometry for Microelectromechanical Applications.

Published in:

Technical Physics Letters, 2023, v. 49, p. S319, doi. 10.1134/S1063785023010182

By:

Kondratenko, T. T.;
Grashchenko, A. S.;
Osipov, A. V.;
Redkov, A. V.;
Ubyivovk, E. V.;
Sharofidinov, Sh. Sh.;
Kukushkin, S. A.

Publication type:

Article

Dielectric and Pyroelectric Properties of Composites Based on Aluminum and Gallium Nitrides Grown by Chloride-Hydride Epitaxy on a Silicon Carbide-on-Silicon Substrate.

Published in:

Technical Physics Letters, 2021, v. 47, n. 6, p. 466, doi. 10.1134/S1063785021050138

By:

Solnyshkin, A.V.;
Sergeeva, O. N.;
Shustova, O. A.;
Sharofidinov, Sh. Sh.;
Staritsyn, M. V.;
Kaptelov, E. Yu.;
Kukushkin, S. A.;
Pronin, I. P.

Publication type:

Article

Single-Particle Radiation Sensitivity of Ultrawide-Bandgap Semiconductors to Terrestrial Atmospheric Neutrons.

Published in:

Crystals (2073-4352), 2025, v. 15, n. 2, p. 186, doi. 10.3390/cryst15020186

By:

Munteanu, Daniela;
Autran, Jean-Luc

Publication type:

Article

AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers.

Published in:

Crystals (2073-4352), 2024, v. 14, n. 11, p. 952, doi. 10.3390/cryst14110952

By:

Li, Jian;
Maidebura, Yan;
Zhang, Yang;
Wu, Gang;
Su, Yanmei;
Zhuravlev, Konstantin;
Wei, Xin

Publication type:

Article

Deep Ultraviolet Photodetector: Materials and Devices.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 6, p. 915, doi. 10.3390/cryst13060915

By:

Fang, Wannian;
Li, Qiang;
Li, Jiaxing;
Li, Yuxuan;
Zhang, Qifan;
Chen, Ransheng;
Wang, Mingdi;
Yun, Feng;
Wang, Tao

Publication type:

Article

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal.

Published in:

Crystals (2073-4352), 2020, v. 10, n. 1, p. 25, doi. 10.3390/cryst10010025

By:

Liu, Chia-Hao;
Chiu, Hsien-Chin;
Huang, Chong-Rong;
Chang, Kuo-Jen;
Chen, Chih-Tien;
Hsueh, Kuang-Po

Publication type:

Article

Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall.

Published in:

Crystals (2073-4352), 2018, v. 8, n. 11, p. 420, doi. 10.3390/cryst8110420

By:

Pai, Yung-Min;
Lin, Chih-Hao;
Lee, Chun-Fu;
Lin, Chun-Peng;
Chen, Cheng-Huan;
Kuo, Hao-Chung;
Ye, Zhi-Ting

Publication type:

Article

AlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatment.

Published in:

Crystals (2073-4352), 2017, v. 7, n. 5, p. 146, doi. 10.3390/cryst7050146

By:

Shuo-Huang Yuan;
Feng-Yeh Chang;
Dong-Sing Wuu;
Ray-Hua Horng

Publication type:

Article

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.

Published in:

Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2539-9

By:

Zhang, Zi-Hui;
Huang Chen, Sung-Wen;
Chu, Chunshuang;
Tian, Kangkai;
Fang, Mengqian;
Zhang, Yonghui;
Bi, Wengang;
Kuo, Hao-Chung

Publication type:

Article

Analytical Model for Output and Transfer Characteristics of AlGaN/GaN Based HEMT's.

Published in:

Journal of Active & Passive Electronic Devices, 2013, v. 8, n. 2/3, p. 131

By:

HANZAZ, M.;
FADLO, S.;
CORDIER, Y.

Publication type:

Article

Polarized Infrared Reflectance Studies for Wurtzite Al0.06Ga0.94N Epilayer on Sapphire Grown by MBE.

Published in:

International Review of Physics, 2013, v. 7, n. 1, p. 36

By:

Aljameel, A. I.;
Hassan, H. Abu;
Ng, S. S.

Publication type:

Article

Room Temperature 2DEG Mobility Above 2350 cm2/V·s in AlGaN/GaN HEMT Grown on GaN Substrate.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 5, p. 2630, doi. 10.1007/s11664-021-08778-y

By:

Chu, Jiayan;
Wang, Quan;
Jiang, Lijuan;
Feng, Chun;
Li, Wei;
Liu, Hongxin;
Xiao, Hongling;
Wang, Xiaoliang

Publication type:

Article

Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 9, p. 5581, doi. 10.1007/s11664-019-07421-1

By:

Klein, Brianna A.;
Baca, Albert G.;
Lepkowski, Stephan M.;
Nordquist, Christopher D.;
Wendt, Joel R.;
Allerman, Andrew A.;
Armstrong, Andrew M.;
Douglas, Erica A.;
Abate, Vincent M.;
Kaplar, Robert J.

Publication type:

Article

Efficiency Improvements in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with Graded Superlattice Last Quantum Barrier and Without Electron Blocking Layer.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 1, p. 460, doi. 10.1007/s11664-018-6716-5

By:

Zhang, Xiu;
Sun, Huiqing;
Huang, Jing;
Liu, Tianyi;
Wang, Xin;
Zhang, Yaohua;
Li, Shupeng;
Zhang, Sheng;
Hou, Yufei;
Guo, Zhiyou

Publication type:

Article

A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 8, p. 5278, doi. 10.1007/s11664-017-5540-7

By:

All Abbas, J.;
Atmaca, G.;
Narin, P.;
Kutlu, E.;
Sarikavak-Lisesivdin, B.;
Lisesivdin, S.

Publication type:

Article

AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 7, p. 3888, doi. 10.1007/s11664-016-5091-3

By:

Toropov, A.;
Shevchenko, E.;
Shubina, T.;
Jmerik, V.;
Nechaev, D.;
Evropeytsev, E.;
Kaibyshev, V.;
Pozina, G.;
Rouvimov, S.;
Ivanov, S.

Publication type:

Article

Study of Deep Ultraviolet Light-Emitting Diodes with a p-AlInN/AlGaN Superlattice Electron-Blocking Layer.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 7, p. 4527, doi. 10.1007/s11664-017-5413-0

By:

Huang, Jing;
Guo, Zhiyou;
Guo, Min;
Liu, Yang;
Yao, Shunyu;
Sun, Jie;
Sun, Huiqing

Publication type:

Article

Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 12, p. 6346, doi. 10.1007/s11664-016-5029-9

By:

Su, Jie;
Posthuma, Niels;
Wellekens, Dirk;
Saripalli, Yoga;
Decoutere, Stefaan;
Arif, Ronald;
Papasouliotis, George

Publication type:

Article

Al Incorporation at All Growth Stages of AlGaN Epilayers Using SiN Treatment.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 2, p. 872, doi. 10.1007/s11664-015-4240-4

By:

Benzarti, Z.;
Halidou, I.;
Touré, A.;
Jani, B.

Publication type:

Article

Nonradiative Recombination, Carrier Localization, and Emission Efficiency of AlGaN Epilayers with Different Al Content.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 12, p. 4706, doi. 10.1007/s11664-015-4132-7

By:

Mickevičius, J.;
Podlipskas, Ž.;
Aleksiejūnas, R.;
Kadys, A.;
Jurkevičius, J.;
Tamulaitis, G.;
Shur, M.;
Shatalov, M.;
Yang, J.;
Gaska, R.

Publication type:

Article

Advantages of Blue InGaN Light-Emitting Diodes with a Mix of AlGaN and InGaN Quantum Barriers.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3253, doi. 10.1007/s11664-015-3886-2

By:

Zeng, Si-Ming;
Fan, Guang-Han;
Zheng, Shu-Wen

Publication type:

Article

Process Uniformity and Challenges of AlGaN/GaN MIS-HEMTs on 200-mm Si (111) Substrates Fabricated with CMOS-Compatible Process and Integration.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2679, doi. 10.1007/s11664-015-3777-6

By:

Selvaraj, S.;
Kamath, A.;
Wang, W.;
Chen, Z.;
Win, K.;
Phua, T.;
Lo, G.

Publication type:

Article