Works matching DE "ALUMINUM gallium arsenide lasers"

Results: 47

MOVPE growth of in situ Ga catalyzed AlGaAs nanowires on sapphire substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2335, doi. 10.1007/s10854-015-4030-z

By:

Bag, Rajesh;
Lohani, J.;
Tyagi, R.;
Pandya, D.;
Singh, R.

Publication type:

Article

Highly-Efficient Longitudinal Second-Harmonic Generation from Doubly-Resonant AlGaAs Nanoantennas.

Published in:

Photonics, 2018, v. 5, n. 3, p. 29, doi. 10.3390/photonics5030029

By:

Xu, Lei;
Rahmani, Mohsen;
Smirnova, Daria;
Zangeneh Kamali, Khosro;
Zhang, Guoquan;
Neshev, Dragomir;
Miroshnichenko, Andrey E.

Publication type:

Article

Temperature-dependent investigation of carrier transport, injection, and densities in AlGaAs-based multi-quantum-well active layers for vertical-cavity surface-emitting lasers.

Published in:

Optical Engineering, 2015, v. 54, n. 1, p. 1, doi. 10.1117/1.OE.54.1.016107

By:

Engelhardt, Andreas P.;
Kolb, Johanna S.;
Roemer, Friedhard;
Weichmann, Ulrich;
Moench, Holger;
Witzigmann, Bernd

Publication type:

Article

Formation Technology of Graded-Gap AlxGal1-xAs Solar Cell Structure Separated from GaAs Substrate.

Published in:

Materials Science / Medziagotyra, 2014, v. 20, n. 2, p. 147, doi. 10.5755/j01.ms.20.2.6327

By:

ŠILĖNAS, Aldis;
STEIKŪNIENĖ, Angelė;
STEIKŪNAS, Gytis

Publication type:

Article

The Increase of Radiative Lifetime of Free Excitons in Selectively Si-doped GaAs/ALxGa1-xAs Heterostructures.

Published in:

Materials Science / Medziagotyra, 2014, v. 20, n. 2, p. 153, doi. 10.5755/j01.ms.20.2.6329

By:

KUNDROTAS, Jurgis;
ČERŠKUS, Aurimas;
NARGELIENĖ, Viktorija;
SUŽIEDĖLIS, Algirdas;
AŠMONTAS, Steponas;
GRADAUSKAS, Jonas;
JOHANNESSEN, Erik;
JOHANNESSEN, Agnė

Publication type:

Article

Photoresponse of Long-Wavelength AlGaAs/GaAs Quantum Cascade Detectors.

Published in:

Advances in Condensed Matter Physics, 2015, v. 2015, p. 1, doi. 10.1155/2015/306912

By:

Li, Liang;
Xiong, Dayuan

Publication type:

Article

Sub-THz wave generation based on a dual wavelength microsquare laser.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 14, p. 939, doi. 10.1049/el.2017.1695

By:

Hai-Zhong Weng;
Osamu Wada;
Jun-Yuan Han;
Jin-Long Xiao;
Yue-De Yang;
Yong-Zhen Huang;
Jin Li;
Bing Xiong;
Chang-Zheng Sun;
Yi Luo

Publication type:

Article

Optimum current-voltage characteristics of GaAs/AlAs intraband microwave devices.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2015, v. 10, n. 9, p. 472, doi. 10.1049/mnl.2015.0002

By:

Chih Chin Yang;
Yan Kuin Su;
Ting Chang Chang

Publication type:

Article

Double-heterostructure ridge-waveguide GaAs/AlGaAs phase modulator for 780 nm lasers.

Published in:

Applied Physics B: Lasers & Optics, 2014, v. 116, n. 1, p. 175, doi. 10.1007/s00340-013-5671-3

By:

Arar, B.;
Wenzel, H.;
Güther, R.;
Brox, O.;
Maaßdorf, A.;
Wicht, A.;
Erbert, G.;
Weyers, M.;
Tränkle, G.;
Fernando, H.;
Peters, A.

Publication type:

Article

Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/GaAs/AlGaAs step quantum wells.

Published in:

Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-130

By:

Yu, Jinling;
Cheng, Shuying;
Lai, Yunfeng;
Zheng, Qiao;
Chen, Yonghai

Publication type:

Article

Gain optimization of the optical waveguide based on the quantum box core/shell structure.

Published in:

International Journal of Nano Dimension, 2015, v. 6, n. 2, p. 189

By:

S., H. Rasooli;
S., S. K. Seyyedi;
A., S. Zabihi

Publication type:

Article

Ohmic contacts for room-temperature A1GaAs/GaAs quantum cascade lasers (QCL).

Published in:

Optica Applicata, 2013, v. 43, n. 1, p. 5, doi. 10.5277/oa130101

By:

BARAŃSKA, ANNA;
SZERLING, ANNA;
KARBOWNIK, PIOTR;
HEJDUK, KRZYSZTOF;
BUGAJSKI, MACIEJ;
ŁASZCZ, ADAM;
GOŁASZEWSKA-MALEC, KRYSTYNA;
FILIPOWSKI, WOJCIECH

Publication type:

Article

24-wavelength distributed Bragg reflector laser array with surface gratings.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 17, p. 1352, doi. 10.1049/el.2015.2030

By:

Brox, O.;
Fricke, J.;
Klehr, A.;
Maaßdorf, A.;
Matalla, M.;
Wenzel, H.;
Erbert, G.

Publication type:

Article

Room-temperature operation of transistor vertical-cavity surface-emitting laser.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 3, p. 80, doi. 10.1049/el.2012.4243

By:

Yu, X.;
Xiang, Y.;
Berggren, J.;
Zabel, T.;
Hammar, M.;
Akram, N.;
Shi, W.;
Chrostowski, L.

Publication type:

Article

Characterisation of Ga1-xInxSb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer.

Published in:

AIMS Materials Science, 2015, v. 2, n. 2, p. 87, doi. 10.3934/matersci.2015.2.86

By:

Hayton, Jonathan P.;
Marshall, Andrew R. J.;
Thompson, Michael D.;
Krier, Anthony

Publication type:

Article

Plasmon mode coupling and depolarization shifts in AlGaAs/GaAs asymmetric step quantum wells with and without electric field.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2015, v. 29, n. 29, p. -1, doi. 10.1142/S0217979215502124

By:

Song, Ya Feng;
Zhu, Qin Sheng;
Liu, Xiang Lin;
Yang, Shao Yan;
Wang, Zhan Guo

Publication type:

Article

AlGaAs/GaAs asymmetric‐waveguide, short cavity laser diode design with a bulk active layer near the p‐cladding for high pulsed power emission.

Published in:

IET Optoelectronics (Wiley-Blackwell), 2021, v. 15, n. 4, p. 194, doi. 10.1049/ote2.12033

By:

Avrutin, Eugene A.;
Ryvkin, Boris S.;
Kostamovaara, Juha T.

Publication type:

Article

MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates.

Published in:

Crystals (2073-4352), 2018, v. 8, n. 8, p. 311, doi. 10.3390/cryst8080311

By:

Baidus, Nikolay;
Aleshkin, Vladimir;
Dubinov, Alexander;
Kudryavtsev, Konstantin;
Nekorkin, Sergei;
Novikov, Alexey;
Pavlov, Dmiriy;
Rykov, Artem;
Sushkov, Artem;
Shaleev, Mikhail;
Yunin, Pavel;
Yurasov, Dmitriy;
Krasilnik, Zakhariy

Publication type:

Article

Integrated Nonlinear Optics: Ultra‐Efficient and Broadband Nonlinear AlGaAs‐on‐Insulator Chip for Low‐Power Optical Signal Processing (Laser Photonics Rev. 12(12)/2018).

Published in:

Laser & Photonics Reviews, 2018, v. 12, n. 12, p. N.PAG, doi. 10.1002/lpor.201870054

By:

Pu, Minhao;
Hu, Hao;
Ottaviano, Luisa;
Semenova, Elizaveta;
Vukovic, Dragana;
Oxenløwe, Leif Katsuo;
Yvind, Kresten

Publication type:

Article

Ultra‐Efficient and Broadband Nonlinear AlGaAs‐on‐Insulator Chip for Low‐Power Optical Signal Processing.

Published in:

Laser & Photonics Reviews, 2018, v. 12, n. 12, p. N.PAG, doi. 10.1002/lpor.201800111

By:

Pu, Minhao;
Hu, Hao;
Ottaviano, Luisa;
Semenova, Elizaveta;
Vukovic, Dragana;
Oxenløwe, Leif Katsuo;
Yvind, Kresten

Publication type:

Article

Thermal effects of λ = 808 nm GaAlAs diode laser irradiation on different titanium surfaces.

Published in:

2015

By:

Giannelli, Marco;
Lasagni, Massimo;
Bani, Daniele

Publication type:

journal article

Integrated Duo Wavelength VCSEL Using an Electrically Pumped GaInAs/AlGaAs 980nm Cavity at the Bottom and an Optically Pumped GaInAs/AlGaInAs 1550nm Cavity on the Top.

Published in:

ISRN Otolaryngology, 2014, p. 1, doi. 10.1155/2014/627165

By:

Islam, Samiha Ishrat;
Islam, Arnob;
Islam, Saiful

Publication type:

Article

Modeling Quantum Beats by Degenerate Four‐Wave Mixing Spectroscopy in a Single GaAs/AlGaAs Quantum Ring.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 1, p. N.PAG, doi. 10.1002/pssr.201800354

By:

Je, Koochul;
Kyhm, Kwangseuk

Publication type:

Article

Photoluminescence kinetics of multiperiod GaAs/AlGaAs structures with asymmetric barriers promising for making unipolar lasers.

Published in:

JETP Letters, 2014, v. 99, n. 4, p. 182, doi. 10.1134/S0021364014040043

By:

Aleshchenko, Yu.;
Kapaev, V.;
Kochiev, M.;
Sadof'ev, Yu.;
Tsvetkov, V.

Publication type:

Article

Features of the conductivity and magnetoresistance of doped two-dimensional structures near a metal-insulator transition.

Published in:

JETP Letters, 2013, v. 98, n. 5, p. 304, doi. 10.1134/S0021364013180033

By:

Agrinskaya, N.;
Kozub, V.

Publication type:

Article

Anisotropic interface contribution to the spin-orbit interaction in quantum wells.

Published in:

JETP Letters, 2013, v. 98, n. 2, p. 84, doi. 10.1134/S0021364013150022

By:

Alekseev, P.

Publication type:

Article

Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy.

Published in:

Journal of Nano- & Electronic Physics, 2014, v. 6, n. 3, p. 03019-1

By:

Bazalevsky, M. A.;
Koltsov, G. I.;
Didenko, S. I.;
Yurchuk, S. Yu.;
Legotin, S. A.;
Rabinovich, O. I.;
Murashev, V. N.;
Kazakov, I. P.

Publication type:

Article

Variable Barrier Height AlGaAs/GaAs Quantum Cascade Laser Operating at 3.7 THz.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 8, p. 1, doi. 10.1002/pssa.201700424

By:

Lin, Tsung‐Tse;
Hirayama, Hideki

Publication type:

Article

Improvement of the oxidation interface in an Al Ga As/ Al x O y waveguide structure by using a Ga As/ Al As superlattice.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 6, p. 1171, doi. 10.1002/pssa.201228770

By:

Song, Jinyan;
Bouchoule, Sophie;
Patriarche, Gilles;
Galopin, Elisabeth;
Yacomotti, Alejandro M.;
Cambril, Edmond;
Kou, Qingli;
Troadec, David;
He, Jian‐Jun;
Harmand, Jean‐Christophe

Publication type:

Article

Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 248, doi. 10.1134/S1063782618020240

By:

Zubov, F.;
Maximov, M.;
Gordeev, N.;
Polubavkina, Yu.;
Zhukov, A.

Publication type:

Article

Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1127, doi. 10.1134/S1063782617090056

By:

Babichev, A.;
Kryzhanovskaya, N.;
Moiseev, E.;
Gladyshev, A.;
Karachinsky, L.;
Novikov, I.;
Blokhin, S.;
Bobrov, M.;
Zadiranov, Yu.;
Troshkov, S.;
Egorov, A.

Publication type:

Article

On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 663, doi. 10.1134/S1063782617050037

By:

Aleshkin, V.;
Baidus, N.;
Dubinov, A.;
Krasilnik, Z.;
Nekorkin, S.;
Novikov, A.;
Rykov, A.;
Yurasov, D.;
Yablonskiy, A.

Publication type:

Article

Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 363, doi. 10.1134/S1063782617030034

By:

Balagula, R.;
Vinnichenko, M.;
Makhov, I.;
Sofronov, A.;
Firsov, D.;
Vorobjev, L.

Publication type:

Article

Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1595, doi. 10.1134/S1063782616120253

By:

Ushanov, V.;
Chaldyshev, V.;
Preobrazhenskii, V.;
Putyato, M.;
Semyagin, B.

Publication type:

Article

Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures.

Published in:

Semiconductors, 2016, v. 50, n. 9, p. 1220, doi. 10.1134/S1063782616090128

By:

Khvostikov, V.;
Kalyuzhnyy, N.;
Mintairov, S.;
Sorokina, S.;
Potapovich, N.;
Emelyanov, V.;
Timoshina, N.;
Andreev, V.

Publication type:

Article

Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers.

Published in:

Semiconductors, 2015, v. 49, n. 2, p. 224, doi. 10.1134/S1063782615020104

By:

Gulyaev, D.;
Zhuravlev, K.;
Bakarov, A.;
Toropov, A.

Publication type:

Article

Structural, optical, and current investigations of superlattices with a complex AlGaAs-based unit cell.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 118, doi. 10.1134/S1063782615010236

By:

Romanova, Yu.;
Dodin, E.;
Nozdrin, Yu.;
Biryukov, A.;
Baidus, N.;
Pavlov, D.;
Malekhonova, N.

Publication type:

Article

Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared range.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1463, doi. 10.1134/S1063782614110165

By:

Maremyanin, K.;
Kryzhkov, D.;
Morozov, S.;
Sergeev, S.;
Kuritsyn, D.;
Gaponova, D.;
Aleshkin, V.;
Sadof'ev, Yu.

Publication type:

Article

Laser emitters (λ = 808 nm) based on AlGaAs/GaAs heterostructures.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 115, doi. 10.1134/S1063782614010205

By:

Marmalyuk, A.;
Andreev, A.;
Konyaev, V.;
Ladugin, M.;
Lebedeva, E.;
Meshkov, A.;
Morozyuk, A.;
Sapozhnikov, S.;
Danilov, A.;
Simakov, V.;
Telegin, K.;
Yarotskaya, I.

Publication type:

Article

Spin Polarization of Carriers in InGaAs Self-Assembled Quantum Rings Inserted in GaAs-AlGaAs Resonant Tunneling Devices.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 7, p. 3851, doi. 10.1007/s11664-017-5391-2

By:

Orsi Gordo, V.;
Gobato, Y.;
Galeti, H.;
Brasil, M.;
Taylor, D.;
Henini, M.

Publication type:

Article

Tunnel Junction with Autodoped AlGaAs on InP.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 10, p. 2881, doi. 10.1007/s11664-013-2687-8

By:

Ohiso, Yoshitaka;
Mitsuhara, Manabu;
Iga, Ryuzo

Publication type:

Article

Intra-pulse beam steering in a mid-infrared quantum cascade laser.

Published in:

Optical & Quantum Electronics, 2015, v. 47, n. 4, p. 835, doi. 10.1007/s11082-014-0006-0

By:

Pruszyńska-Karbownik, Emilia;
Regiński, Kazimierz;
Karbownik, Piotr;
Mroziewicz, Bohdan

Publication type:

Article

Advanced optical characterization of AlGaAs/GaAs superlattices for active regions in quantum cascade lasers.

Published in:

Optical & Quantum Electronics, 2015, v. 47, n. 4, p. 945, doi. 10.1007/s11082-014-9991-2

By:

Janiak, F.;
Dyksik, M.;
Motyka, M.;
Ryczko, K.;
Misiewicz, J.;
Kosiel, K.;
Bugajski, M.

Publication type:

Article

A Study of Ohmic Contacts of Power Photovoltaic Converters.

Published in:

Technical Physics Letters, 2018, v. 44, n. 12, p. 1198, doi. 10.1134/S1063785019010140

By:

Malevskaya, A. V.;
Khvostikov, V. P.;
Soldatenkov, F. Yu.;
Khvostikova, O. A.;
Vlasov, A. S.;
Andreev, V. M.

Publication type:

Article

Photovoltaic Characteristics of AlGaAs-Based LEDs.

Published in:

Technical Physics Letters, 2018, v. 44, n. 4, p. 341, doi. 10.1134/S1063785018040259

By:

Sokolovskii, A. A.

Publication type:

Article

All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures.

Published in:

Technical Physics Letters, 2017, v. 43, n. 1, p. 101, doi. 10.1134/S1063785017010254

By:

Podoskin, A.;
Shashkin, I.;
Slipchenko, S.;
Pikhtin, N.;
Tarasov, I.

Publication type:

Article

Optimal power settings of aluminum gallium arsenide lasers in caries inhibition — An in vitro study.

Published in:

Journal of Conservative Dentistry, 2016, v. 19, n. 2, p. 175, doi. 10.4103/0972-0707.178704

By:

Sharma, Sonali;
Hegde, Mithra N.;
Sadananda, Vandana;
Mathews, Blessen

Publication type:

Article