Works matching DE "ALUMINUM gallium arsenide lasers"
Results: 47
AlGaAs/GaAs asymmetric‐waveguide, short cavity laser diode design with a bulk active layer near the p‐cladding for high pulsed power emission.
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- IET Optoelectronics (Wiley-Blackwell), 2021, v. 15, n. 4, p. 194, doi. 10.1049/ote2.12033
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- Article
Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy.
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- Journal of Nano- & Electronic Physics, 2014, v. 6, n. 3, p. 03019-1
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- Article
Double-heterostructure ridge-waveguide GaAs/AlGaAs phase modulator for 780 nm lasers.
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- Applied Physics B: Lasers & Optics, 2014, v. 116, n. 1, p. 175, doi. 10.1007/s00340-013-5671-3
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- Article
Optimum current-voltage characteristics of GaAs/AlAs intraband microwave devices.
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- Micro & Nano Letters (Wiley-Blackwell), 2015, v. 10, n. 9, p. 472, doi. 10.1049/mnl.2015.0002
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- Article
Temperature-dependent investigation of carrier transport, injection, and densities in AlGaAs-based multi-quantum-well active layers for vertical-cavity surface-emitting lasers.
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- Optical Engineering, 2015, v. 54, n. 1, p. 1, doi. 10.1117/1.OE.54.1.016107
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- Article
Integrated Duo Wavelength VCSEL Using an Electrically Pumped GaInAs/AlGaAs 980nm Cavity at the Bottom and an Optically Pumped GaInAs/AlGaInAs 1550nm Cavity on the Top.
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- ISRN Otolaryngology, 2014, p. 1, doi. 10.1155/2014/627165
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- Article
Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/GaAs/AlGaAs step quantum wells.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-130
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- Article
Thermal effects of λ = 808 nm GaAlAs diode laser irradiation on different titanium surfaces.
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- 2015
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- journal article
Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers.
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- Semiconductors, 2018, v. 52, n. 2, p. 248, doi. 10.1134/S1063782618020240
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- Article
Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range.
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- Semiconductors, 2017, v. 51, n. 9, p. 1127, doi. 10.1134/S1063782617090056
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- Article
On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates.
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- Semiconductors, 2017, v. 51, n. 5, p. 663, doi. 10.1134/S1063782617050037
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- Article
Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field.
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- Semiconductors, 2017, v. 51, n. 3, p. 363, doi. 10.1134/S1063782617030034
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- Article
Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs.
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- Semiconductors, 2016, v. 50, n. 12, p. 1595, doi. 10.1134/S1063782616120253
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- Article
Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures.
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- Semiconductors, 2016, v. 50, n. 9, p. 1220, doi. 10.1134/S1063782616090128
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- Article
Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers.
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- Semiconductors, 2015, v. 49, n. 2, p. 224, doi. 10.1134/S1063782615020104
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- Article
Structural, optical, and current investigations of superlattices with a complex AlGaAs-based unit cell.
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- Semiconductors, 2015, v. 49, n. 1, p. 118, doi. 10.1134/S1063782615010236
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- Article
Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared range.
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- Semiconductors, 2014, v. 48, n. 11, p. 1463, doi. 10.1134/S1063782614110165
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- Article
Laser emitters (λ = 808 nm) based on AlGaAs/GaAs heterostructures.
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- Semiconductors, 2014, v. 48, n. 1, p. 115, doi. 10.1134/S1063782614010205
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- Article
MOVPE growth of in situ Ga catalyzed AlGaAs nanowires on sapphire substrate.
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- Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2335, doi. 10.1007/s10854-015-4030-z
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- Article
Characterisation of Ga<sub>1-x</sub>In<sub>x</sub>Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer.
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- AIMS Materials Science, 2015, v. 2, n. 2, p. 87, doi. 10.3934/matersci.2015.2.86
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- Article
Modeling Quantum Beats by Degenerate Four‐Wave Mixing Spectroscopy in a Single GaAs/AlGaAs Quantum Ring.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 1, p. N.PAG, doi. 10.1002/pssr.201800354
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- Article
Ohmic contacts for room-temperature A1GaAs/GaAs quantum cascade lasers (QCL).
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- Optica Applicata, 2013, v. 43, n. 1, p. 5, doi. 10.5277/oa130101
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- Article
Sub-THz wave generation based on a dual wavelength microsquare laser.
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- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 14, p. 939, doi. 10.1049/el.2017.1695
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- Article
24-wavelength distributed Bragg reflector laser array with surface gratings.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 17, p. 1352, doi. 10.1049/el.2015.2030
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- Article
Room-temperature operation of transistor vertical-cavity surface-emitting laser.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 3, p. 80, doi. 10.1049/el.2012.4243
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- Article
MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates.
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- Crystals (2073-4352), 2018, v. 8, n. 8, p. 311, doi. 10.3390/cryst8080311
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- Article
Integrated Nonlinear Optics: Ultra‐Efficient and Broadband Nonlinear AlGaAs‐on‐Insulator Chip for Low‐Power Optical Signal Processing (Laser Photonics Rev. 12(12)/2018).
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- Laser & Photonics Reviews, 2018, v. 12, n. 12, p. N.PAG, doi. 10.1002/lpor.201870054
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- Article
Ultra‐Efficient and Broadband Nonlinear AlGaAs‐on‐Insulator Chip for Low‐Power Optical Signal Processing.
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- Laser & Photonics Reviews, 2018, v. 12, n. 12, p. N.PAG, doi. 10.1002/lpor.201800111
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- Article
Plasmon mode coupling and depolarization shifts in AlGaAs/GaAs asymmetric step quantum wells with and without electric field.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2015, v. 29, n. 29, p. -1, doi. 10.1142/S0217979215502124
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- Article
Optimal power settings of aluminum gallium arsenide lasers in caries inhibition — An in vitro study.
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- Journal of Conservative Dentistry, 2016, v. 19, n. 2, p. 175, doi. 10.4103/0972-0707.178704
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- Article
Spin Polarization of Carriers in InGaAs Self-Assembled Quantum Rings Inserted in GaAs-AlGaAs Resonant Tunneling Devices.
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- Journal of Electronic Materials, 2017, v. 46, n. 7, p. 3851, doi. 10.1007/s11664-017-5391-2
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- Article
Tunnel Junction with Autodoped AlGaAs on InP.
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- Journal of Electronic Materials, 2013, v. 42, n. 10, p. 2881, doi. 10.1007/s11664-013-2687-8
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- Article
Intra-pulse beam steering in a mid-infrared quantum cascade laser.
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- Optical & Quantum Electronics, 2015, v. 47, n. 4, p. 835, doi. 10.1007/s11082-014-0006-0
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- Article
Advanced optical characterization of AlGaAs/GaAs superlattices for active regions in quantum cascade lasers.
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- Optical & Quantum Electronics, 2015, v. 47, n. 4, p. 945, doi. 10.1007/s11082-014-9991-2
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- Article
Photoluminescence kinetics of multiperiod GaAs/AlGaAs structures with asymmetric barriers promising for making unipolar lasers.
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- JETP Letters, 2014, v. 99, n. 4, p. 182, doi. 10.1134/S0021364014040043
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- Article
Features of the conductivity and magnetoresistance of doped two-dimensional structures near a metal-insulator transition.
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- JETP Letters, 2013, v. 98, n. 5, p. 304, doi. 10.1134/S0021364013180033
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- Article
Anisotropic interface contribution to the spin-orbit interaction in quantum wells.
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- JETP Letters, 2013, v. 98, n. 2, p. 84, doi. 10.1134/S0021364013150022
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- Article
Gain optimization of the optical waveguide based on the quantum box core/shell structure.
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- International Journal of Nano Dimension, 2015, v. 6, n. 2, p. 189
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- Article
Photoresponse of Long-Wavelength AlGaAs/GaAs Quantum Cascade Detectors.
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- Advances in Condensed Matter Physics, 2015, v. 2015, p. 1, doi. 10.1155/2015/306912
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- Article
A Study of Ohmic Contacts of Power Photovoltaic Converters.
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- Technical Physics Letters, 2018, v. 44, n. 12, p. 1198, doi. 10.1134/S1063785019010140
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- Article
Photovoltaic Characteristics of AlGaAs-Based LEDs.
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- Technical Physics Letters, 2018, v. 44, n. 4, p. 341, doi. 10.1134/S1063785018040259
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- Publication type:
- Article
All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures.
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- Technical Physics Letters, 2017, v. 43, n. 1, p. 101, doi. 10.1134/S1063785017010254
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- Article
Highly-Efficient Longitudinal Second-Harmonic Generation from Doubly-Resonant AlGaAs Nanoantennas.
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- Photonics, 2018, v. 5, n. 3, p. 29, doi. 10.3390/photonics5030029
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- Article
Variable Barrier Height AlGaAs/GaAs Quantum Cascade Laser Operating at 3.7 THz.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 8, p. 1, doi. 10.1002/pssa.201700424
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- Article
Improvement of the oxidation interface in an Al Ga As/ Al<sub> x</sub> O<sub> y</sub> waveguide structure by using a Ga As/ Al As superlattice.
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- Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 6, p. 1171, doi. 10.1002/pssa.201228770
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- Article
The Increase of Radiative Lifetime of Free Excitons in Selectively Si-doped GaAs/AL<sub>x</sub>Ga<sub>1-x</sub>As Heterostructures.
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- Materials Science / Medziagotyra, 2014, v. 20, n. 2, p. 153, doi. 10.5755/j01.ms.20.2.6329
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- Article
Formation Technology of Graded-Gap Al<sub>x</sub>Gal<sub>1-x</sub>As Solar Cell Structure Separated from GaAs Substrate.
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- Materials Science / Medziagotyra, 2014, v. 20, n. 2, p. 147, doi. 10.5755/j01.ms.20.2.6327
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- Article