Found: 121
Select item for more details and to access through your institution.
Methods for Switching Radiation Polarization in GaAs Laser Diodes.
- Published in:
- Technical Physics, 2022, v. 66, n. 4, p. 1194, doi. 10.1134/S106378422109005X
- By:
- Publication type:
- Article
Methods for Switching Radiation Polarization in GaAs Laser Diodes.
- Published in:
- Technical Physics, 2021, v. 66, n. 11, p. 1194, doi. 10.1134/S106378422109005X
- By:
- Publication type:
- Article
Pulsed Laser Irradiation of GaAs-Based Light-Emitting Structures.
- Published in:
- Semiconductors, 2020, v. 54, n. 12, p. 1598, doi. 10.1134/S1063782620120428
- By:
- Publication type:
- Article
Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures.
- Published in:
- Semiconductors, 2020, v. 54, n. 9, p. 1059, doi. 10.1134/S1063782620090079
- By:
- Publication type:
- Article
Formation of Carbon Layers by the Thermal Decomposition of Carbon Tetrachloride in a Reactor for MOCVD Epitaxy.
- Published in:
- Semiconductors, 2020, v. 54, n. 8, p. 956, doi. 10.1134/S106378262008028X
- By:
- Publication type:
- Article
The Use of Films of Multilayer Graphene as Coatings of Light-Emitting GaAs Structures.
- Published in:
- Optics & Spectroscopy, 2020, v. 128, n. 3, p. 387, doi. 10.1134/S0030400X20030030
- By:
- Publication type:
- Article
GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells.
- Published in:
- Semiconductors, 2019, v. 53, n. 12, p. 1709, doi. 10.1134/S1063782619160085
- By:
- Publication type:
- Article
On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures.
- Published in:
- Semiconductors, 2019, v. 53, n. 9, p. 1207, doi. 10.1134/S1063782619090148
- By:
- Publication type:
- Article
Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids.
- Published in:
- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-43741-2
- By:
- Publication type:
- Article
Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition.
- Published in:
- Semiconductors, 2019, v. 53, n. 3, p. 332, doi. 10.1134/S1063782619030230
- By:
- Publication type:
- Article
Enhancing the Circular Polarization of Spin Light-Emitting Diodes by Processing in Selenium Vapor.
- Published in:
- Technical Physics Letters, 2019, v. 45, n. 3, p. 235, doi. 10.1134/S1063785019030064
- By:
- Publication type:
- Article
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates.
- Published in:
- Semiconductors, 2018, v. 52, n. 12, p. 1564, doi. 10.1134/S1063782618120205
- By:
- Publication type:
- Article
The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures.
- Published in:
- Semiconductors, 2018, v. 52, n. 11, p. 1398, doi. 10.1134/S1063782618110106
- By:
- Publication type:
- Article
Specific Features of the Electrochemical Capacitance-Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 1004, doi. 10.1134/S1063782618080250
- By:
- Publication type:
- Article
Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate.
- Published in:
- Technical Physics Letters, 2018, v. 44, n. 8, p. 735, doi. 10.1134/S1063785018080175
- By:
- Publication type:
- Article
Optical thyristor based on GaAs/InGaP materials.
- Published in:
- Semiconductors, 2017, v. 51, n. 11, p. 1391, doi. 10.1134/S1063782617110306
- By:
- Publication type:
- Article
Features of the selective manganese doping of GaAs structures.
- Published in:
- Semiconductors, 2017, v. 51, n. 11, p. 1415, doi. 10.1134/S1063782617110148
- By:
- Publication type:
- Article
Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures.
- Published in:
- Semiconductors, 2017, v. 51, n. 11, p. 1456, doi. 10.1134/S1063782617110239
- By:
- Publication type:
- Article
Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well.
- Published in:
- Semiconductors, 2017, v. 51, n. 10, p. 1360, doi. 10.1134/S1063782617100086
- By:
- Publication type:
- Article
Effect of active-region 'volume' on the radiative properties of laser heterostructures with radiation output through the substrate.
- Published in:
- Semiconductors, 2017, v. 51, n. 1, p. 73, doi. 10.1134/S1063782617010158
- By:
- Publication type:
- Article
Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates.
- Published in:
- Semiconductors, 2016, v. 50, n. 11, p. 1435, doi. 10.1134/S1063782616110269
- By:
- Publication type:
- Article
Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications.
- Published in:
- Semiconductors, 2016, v. 50, n. 11, p. 1443, doi. 10.1134/S1063782616110087
- By:
- Publication type:
- Article
Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn.
- Published in:
- Semiconductors, 2016, v. 50, n. 11, p. 1469, doi. 10.1134/S1063782616110129
- By:
- Publication type:
- Article
Study of the structures of cleaved cross sections by Raman spectroscopy.
- Published in:
- Semiconductors, 2016, v. 50, n. 11, p. 1539, doi. 10.1134/S106378261611021X
- By:
- Publication type:
- Article
Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes.
- Published in:
- Semiconductors, 2016, v. 50, n. 11, p. 1554, doi. 10.1134/S1063782616110026
- By:
- Publication type:
- Article
Coherent spin dynamics of carriers in ferromagnetic semiconductor heterostructures with an Mn δ layer.
- Published in:
- Journal of Experimental & Theoretical Physics, 2016, v. 123, n. 3, p. 420, doi. 10.1134/S106377611607013X
- By:
- Publication type:
- Article
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 586, doi. 10.1134/S106378261605002X
- By:
- Publication type:
- Article
Optically controlled spin-polarization memory effect on Mn delta-doped heterostructures.
- Published in:
- Scientific Reports, 2016, p. 24537, doi. 10.1038/srep24537
- By:
- Publication type:
- Article
Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides.
- Published in:
- Semiconductors, 2015, v. 49, n. 12, p. 1571, doi. 10.1134/S1063782615120180
- By:
- Publication type:
- Article
Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity.
- Published in:
- Semiconductors, 2015, v. 49, n. 11, p. 1430, doi. 10.1134/S106378261511010X
- By:
- Publication type:
- Article
On a semiconductor laser with a p- n tunnel junction with radiation emission through the substrate.
- Published in:
- Semiconductors, 2015, v. 49, n. 11, p. 1440, doi. 10.1134/S1063782615110123
- By:
- Publication type:
- Article
The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer.
- Published in:
- Technical Physics Letters, 2015, v. 41, n. 7, p. 648, doi. 10.1134/S1063785015070020
- By:
- Publication type:
- Article
Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons.
- Published in:
- Semiconductors, 2015, v. 49, n. 3, p. 358, doi. 10.1134/S1063782615030057
- By:
- Publication type:
- Article
Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates.
- Published in:
- Technical Physics Letters, 2015, v. 41, n. 3, p. 304, doi. 10.1134/S1063785015030177
- By:
- Publication type:
- Article
An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells.
- Published in:
- Semiconductors, 2015, v. 49, n. 2, p. 170, doi. 10.1134/S1063782615020025
- By:
- Publication type:
- Article
Exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures.
- Published in:
- Semiconductors, 2015, v. 49, n. 2, p. 191, doi. 10.1134/S1063782615020141
- By:
- Publication type:
- Article
Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium.
- Published in:
- Semiconductors, 2015, v. 49, n. 1, p. 1, doi. 10.1134/S1063782615010182
- By:
- Publication type:
- Article
Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer.
- Published in:
- Semiconductors, 2015, v. 49, n. 1, p. 9, doi. 10.1134/S1063782615010054
- By:
- Publication type:
- Article
Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn.
- Published in:
- Semiconductors, 2015, v. 49, n. 1, p. 99, doi. 10.1134/S1063782615010200
- By:
- Publication type:
- Article
Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition.
- Published in:
- Semiconductors, 2015, v. 49, n. 1, p. 109, doi. 10.1134/S1063782615010285
- By:
- Publication type:
- Article
Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction.
- Published in:
- Technical Physics, 2014, v. 59, n. 12, p. 1839, doi. 10.1134/S1063784214120056
- By:
- Publication type:
- Article
The effect of ferromagnetic Mn-delta-doped layer on the emission properties of GaAsSb/GaAs and InGaAs/GaAsSb/GaAs heterostructures.
- Published in:
- Technical Physics Letters, 2014, v. 40, n. 10, p. 930, doi. 10.1134/S1063785014100290
- By:
- Publication type:
- Article
Temperature dependence of the circular polarization of electroluminescence from spin-polarized light-emitting diodes based on InGaAs/GaAs heterostructures.
- Published in:
- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2014, v. 8, n. 3, p. 433, doi. 10.1134/S1027451014030033
- By:
- Publication type:
- Article
Far-infrared radiation from n-InGaAs/GaAs quantum-well heterostructures in high lateral electric fields under injection conditions.
- Published in:
- Semiconductors, 2014, v. 48, n. 5, p. 625, doi. 10.1134/S1063782614050029
- By:
- Publication type:
- Article
Experimental determination of the optimum number of quantum wells in multiwell heterolasers with radiation leakage into a substrate.
- Published in:
- Technical Physics Letters, 2014, v. 40, n. 5, p. 432, doi. 10.1134/S1063785014050228
- By:
- Publication type:
- Article
Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1583, doi. 10.1134/S106378261312021X
- By:
- Publication type:
- Article
Study of heterostructures with a combined In(Ga)As/GaAs quantum dot/quantum well layer and a Mn δ layer.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1591, doi. 10.1134/S1063782613120166
- By:
- Publication type:
- Article
Tunneling effects in tilted magnetic fields in n-InGaAs/GaAs structures with strongly coupled double quantum wells.
- Published in:
- Semiconductors, 2013, v. 47, n. 11, p. 1447, doi. 10.1134/S1063782613110055
- By:
- Publication type:
- Article
Rashba spin splitting and cyclotron resonance in strained InGaAs/InP heterostructures with a two-dimensional electron gas.
- Published in:
- Semiconductors, 2013, v. 47, n. 11, p. 1485, doi. 10.1134/S1063782613110092
- By:
- Publication type:
- Article
Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 μm.
- Published in:
- Semiconductors, 2013, v. 47, n. 11, p. 1504, doi. 10.1134/S1063782613110158
- By:
- Publication type:
- Article