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Determination of Thickness and Doping Features of Multilayer 4H-SiC Structures by Frequency Analysis of IR Reflection Spectra.
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- Technical Physics Letters, 2024, v. 50, n. 2, p. 171, doi. 10.1134/S1063785023180013
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- Article
Experimental Detection of Resonant Tunneling in the Doped Structure with a Single Quantum Well by the Admittance Spectroscopy Method.
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- Technical Physics Letters, 2018, v. 44, n. 12, p. 1171, doi. 10.1134/S1063785018120453
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Characteristics of radiation generated during the conversion of backward bulk magnetostatic waves into electromagnetic waves.
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- Technical Physics Letters, 2008, v. 34, n. 11, p. 971, doi. 10.1134/S1063785008110217
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- Article
Stochastic Instability of the Magnetostatic Surface Wave Trajectories in a Ferrite Film Magnetized by a Modulated Field with a Banklike Profile.
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- Technical Physics Letters, 2001, v. 27, n. 4, p. 348, doi. 10.1134/1.1370223
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Spatial Distribution of the Electromagnetic Radiation Accompanying Propagation of Magnetostatic Surface Waves in a Ferrite Film Magnetized by a Transversely Nonuniform Field.
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- Technical Physics Letters, 2000, v. 26, n. 7, p. 588, doi. 10.1134/1.1262921
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- Article
Trajectories of return surface magnetostatic waves in a ferrite–dielectric–metal structure magnetized by a nonuniform “ridge” field.
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- Technical Physics Letters, 1999, v. 25, n. 12, p. 953, doi. 10.1134/1.1262692
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- Article
Dispersion of magnetostatic waves in a tangentially magnetized ferrite wafer with normal uniaxial anisotropy.
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- Technical Physics Letters, 1999, v. 25, n. 11, p. 917, doi. 10.1134/1.1262683
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- Article
Conditions for the existence of backward surface magnetostatic waves in a ferrite–insulator–metal structure.
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- Technical Physics Letters, 1998, v. 24, n. 7, p. 499, doi. 10.1134/1.1262170
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- Article
Propagation of magnetostatic backward surface waves in ferrite–insulator–metal structures magnetized by linearly nonuniform magnetic fields.
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- Technical Physics, 1999, v. 44, n. 2, p. 196, doi. 10.1134/1.1259283
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- Article
Observation of localized centers with anomalous behavior in light-emitting heterostructures with multiple InGaN/GaN quantum wells.
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- Semiconductors, 2010, v. 44, n. 3, p. 335, doi. 10.1134/S1063782610030115
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Capacitance-voltage study of heterostructures with InGaAs/GaAs quantum wells in the temperature range from 10 to 320 K.
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- Semiconductors, 2009, v. 43, n. 10, p. 1328, doi. 10.1134/S1063782609100121
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Characterization of In<sub> x </sub>Ga<sub>1− x </sub>As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions.
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- Semiconductors, 2007, v. 41, n. 3, p. 320, doi. 10.1134/S1063782607030153
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Determination of the valence-band offset and its temperature dependence in isotypic heterojunctions p-AlxGa1-xAs/p-AlyGa1-yAs from C-V measurements.
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- Semiconductors, 1999, v. 33, n. 8, p. 858, doi. 10.1134/1.1187798
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On C-V profiling near an isotypic heterojunction
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- Semiconductors, 1998, v. 32, n. 1, p. 52, doi. 10.1134/1.1187357
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Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy.
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- Technical Physics Letters, 2023, v. 49, p. S163, doi. 10.1134/S1063785023900649
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Through Concentration Profiling of Heterojunction Solar Cells.
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- Technical Physics Letters, 2019, v. 45, n. 9, p. 890, doi. 10.1134/S106378501909013X
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Technique for the Electrochemical Capacitance–Voltage Profiling of Heavily Doped Structures with a Sharp Doping Profile.
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- Semiconductors, 2019, v. 53, n. 2, p. 268, doi. 10.1134/S1063782619020076
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Specific Features of the Electrochemical Capacitance-Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions.
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- Semiconductors, 2018, v. 52, n. 8, p. 1004, doi. 10.1134/S1063782618080250
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Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics.
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- Semiconductors, 2018, v. 52, n. 4, p. 507, doi. 10.1134/S106378261804022X
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- Article