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Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates.
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- Semiconductors, 2020, v. 54, n. 5, p. 596, doi. 10.1134/S1063782620050115
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Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures.
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- Semiconductors, 2020, v. 54, n. 4, p. 417, doi. 10.1134/S1063782620040168
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- Article
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate.
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- Semiconductors, 2019, v. 53, n. 8, p. 1120, doi. 10.1134/S1063782619080165
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Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of A<sup>III</sup>N/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy.
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- Semiconductors, 2019, v. 53, n. 7, p. 993, doi. 10.1134/S1063782619070224
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Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial In<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N/Si(111) Heterostructures with a Nanocolumnar Film Morphology.
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- Semiconductors, 2019, v. 53, n. 1, p. 65, doi. 10.1134/S1063782619010172
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Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial In<sub>x</sub>Ga<sub>1 - x</sub>N/Si(111) Heterostructures.
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- Semiconductors, 2018, v. 52, n. 13, p. 1653, doi. 10.1134/S106378261813016X
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- Article
Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy.
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- Semiconductors, 2018, v. 52, n. 8, p. 1012, doi. 10.1134/S1063782618080195
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- Article