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Dynamics of oxide phases on the surface of single- and polycrystalline Pb1 − xSnxTe films upon their investigation by the raman light scattering method.
Published in:
Optics & Spectroscopy, 2013, v. 115, n. 5, p. 679, doi. 10.1134/S0030400X1311026X
By:
- Zimin, S. P.;
- Gorlachev, E. S.;
- Gladysheva, N. V.;
- Naumov, V. V.;
- Gremenok, V. F.;
- Seidi, H. G.
Publication type:
Article
Morphology of Pb1− x EuxSe epitaxial film surfaces after plasma treatment.
Published in:
Russian Physics Journal, 2007, v. 50, n. 11, p. 1158, doi. 10.1007/s11182-007-0171-8
By:
- Zimin, S. P.;
- Gorlachev, E. S.;
- Gerke, M. N.;
- Kutrovskaya, S. V.;
- Amirov, I. I.
Publication type:
Article
Pore formation in aluminum films on macroporous silicon during high-temperature annealing.
Published in:
Technical Physics Letters, 2008, v. 34, n. 2, p. 143, doi. 10.1134/S106378500802017X
By:
- Zimin, S. P.;
- Gorlachev, E. S.;
- Gerke, M. N.
Publication type:
Article
Formation of a Two-Sided Porous Structure during Electrochemical Silicon Etching by the Unno–Imai Method.
Published in:
Technical Physics Letters, 2000, v. 26, n. 1, p. 12, doi. 10.1134/1.1262723
By:
- Zimin, S. P.;
- Preobrazhenskiı, M. N.;
- Zimin, D. S.
Publication type:
Article
Influence of short-term annealing on the conductivity of porous silicon and the transition resistivity of an aluminum-porous silicon contact.
Published in:
Technical Physics Letters, 1998, v. 24, n. 3, p. 226, doi. 10.1134/1.1262063
By:
- Zimin, S. P.;
- Komarov, E. P.
Publication type:
Article
Some Results of Oceanological Video Monitoring.
Published in:
Doklady Earth Sciences, 2018, v. 482, n. 1, p. 1244, doi. 10.1134/S1028334X18090283
By:
- Fishchenko, V. K.;
- Dolgikh, G. I.;
- Zimin, P. S.;
- Subote, A. E.
Publication type:
Article
Specific Features of Vapor-Liquid-Solid Nanostructure Growth on the Surface of SnS Films during Plasma Treatment.
Published in:
Semiconductors, 2017, v. 51, n. 13, p. 1728, doi. 10.1134/S1063782617130152
By:
- Zimin, S. P.;
- Gorlachev, E. S.;
- Mokrov, D. A.;
- Amirov, I. I.;
- Gremenok, V. F.;
- Ivanov, V. A.
Publication type:
Article
Hopping conductivity in low-porosity mesoporous silicon formed on p +-Si:B.
Published in:
Semiconductors, 2006, v. 40, n. 11, p. 1350, doi. 10.1134/S1063782606110170
By:
- Zimin, S. P.
Publication type:
Article
Tensoresistive Effect in Porous Silicon Layers with Different Morphology.
Published in:
Semiconductors, 2004, v. 38, n. 5, p. 594, doi. 10.1134/1.1755898
By:
- Zimin, S. P.;
- Bragin, A. N.
Publication type:
Article
Classification of Electrical Properties of Porous Silicon.
Published in:
Semiconductors, 2000, v. 34, n. 3, p. 353, doi. 10.1134/1.1187985
By:
- Zimin, S. P.
Publication type:
Article
Conductivity relaxation in coated porous silicon after annealing.
Published in:
Semiconductors, 1999, v. 33, n. 4, p. 457, doi. 10.1134/1.1187710
By:
- Zimin, S. P.;
- Bragin, A. N.
Publication type:
Article
Formation of Metallic Droplets on the Surface of Indium Sulfide Films During Argon Plasma Treatment.
Published in:
International Journal of Nanoscience, 2019, v. 18, n. 3/4, p. N.PAG, doi. 10.1142/S0219581X19400660
By:
- Zimin, S. P.;
- Pipkova, A. S.;
- Mazaletskiy, L. A.;
- Amirov, I. I.;
- Gorlachev, E. S.;
- Vasilev, S. V.;
- Khoroshko, V. V.;
- Gremenok, V. F.;
- Pyatlitski, A. N.
Publication type:
Article
Nanostructuring of the CIGS Films Surface by the Plasma Treatment with Low Ion Energy.
Published in:
International Journal of Nanoscience, 2019, v. 18, n. 3/4, p. N.PAG, doi. 10.1142/S0219581X19400647
By:
- Zimin, S. P.;
- Mazaletskiy, L. A.;
- Amirov, I. I.;
- Gorlachev, E. S.;
- Gremenok, V. F.;
- Khoroshko, V. V.
Publication type:
Article
Features of Raman Scattering in Lead Sulfide and Lead Sulfide-Selenide Epitaxial Films.
Published in:
Optics & Spectroscopy, 2023, v. 131, n. 10, p. 975, doi. 10.1134/S0030400X23100065
By:
- Fedorov, A. V.;
- Baranov, A. V.;
- Zimin, S. P.
Publication type:
Article
Modification of the Surface of Lead-Tin Telluride Films by Low-Energy Argon Ions.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2022, v. 16, n. 5, p. 876, doi. 10.1134/S1027451022050421
By:
- Zimin, S. P.;
- Amirov, I. I.;
- Naumov, V. V.;
- Belov, Ya. D.;
- Abramof, E.;
- Rappl, P. H. O.
Publication type:
Article
Effect of Nanostructuring of the Surface of a Lead Sulfide Crystal in Plasma on the Optical Reflection Spectra.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2022, v. 16, n. 1, p. 134, doi. 10.1134/S1027451022010384
By:
- Zimin, S. P.;
- Kolesnikov, N. N.;
- Tivanov, M. S.;
- Lyashenko, L. S.;
- Amirov, I. I.;
- Naumov, V. V.;
- Gorlachev, E. S.
Publication type:
Article
Surface Modification of Pb1 –xSnxSe Films during Plasma Treatment Near the Sputtering Threshold.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2020, v. 14, n. 6, p. 1174, doi. 10.1134/S1027451020050213
By:
- Zimin, S. P.;
- Amirov, I. I.;
- Naumov, V. V.;
- Guseva, K. E.
Publication type:
Article
The Formation of Hollow Lead Structures on the Surface of PbSe Films Treated in Argon Plasma.
Published in:
Technical Physics Letters, 2018, v. 44, n. 6, p. 518, doi. 10.1134/S1063785018060305
By:
- Zimin, S. P.;
- Amirov, I. I.;
- Naumov, V. V.;
- Guseva, K. E.
Publication type:
Article

Found: 18

Dynamics of oxide phases on the surface of single- and polycrystalline Pb<sub>1 − x</sub>Sn<sub>x</sub>Te films upon their investigation by the raman light scattering method.

Morphology of Pb<sub>1− x </sub>Eu<sub>x</sub>Se epitaxial film surfaces after plasma treatment.

Pore formation in aluminum films on macroporous silicon during high-temperature annealing.

Formation of a Two-Sided Porous Structure during Electrochemical Silicon Etching by the Unno–Imai Method.

Influence of short-term annealing on the conductivity of porous silicon and the transition resistivity of an aluminum-porous silicon contact.

Some Results of Oceanological Video Monitoring.

Specific Features of Vapor-Liquid-Solid Nanostructure Growth on the Surface of SnS Films during Plasma Treatment.

Hopping conductivity in low-porosity mesoporous silicon formed on p <sup>+</sup>-Si:B.

Tensoresistive Effect in Porous Silicon Layers with Different Morphology.

Classification of Electrical Properties of Porous Silicon.

Conductivity relaxation in coated porous silicon after annealing.

Formation of Metallic Droplets on the Surface of Indium Sulfide Films During Argon Plasma Treatment.

Nanostructuring of the CIGS Films Surface by the Plasma Treatment with Low Ion Energy.

Features of Raman Scattering in Lead Sulfide and Lead Sulfide-Selenide Epitaxial Films.

Modification of the Surface of Lead-Tin Telluride Films by Low-Energy Argon Ions.

Effect of Nanostructuring of the Surface of a Lead Sulfide Crystal in Plasma on the Optical Reflection Spectra.

Surface Modification of Pb1 –xSnxSe Films during Plasma Treatment Near the Sputtering Threshold.

The Formation of Hollow Lead Structures on the Surface of PbSe Films Treated in Argon Plasma.