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Spin Transport over Huge Distances in a Magnetized 2D Electron System.
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- Annalen der Physik, 2019, v. 531, n. 6, p. N.PAG, doi. 10.1002/andp.201800443
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- Article
Role of the phase transition at GaN QDs formation on (0001)AlN surface by ammonia molecular beam epitaxy.
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- Journal of Thermal Analysis & Calorimetry, 2018, v. 133, n. 2, p. 1181, doi. 10.1007/s10973-018-7280-1
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- Article
Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE.
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- Journal of Thermal Analysis & Calorimetry, 2018, v. 133, n. 2, p. 1099, doi. 10.1007/s10973-018-7116-z
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- Article
Transionospheric radiosounding with allowance for the reflection of radiowaves from the earth.
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- Geomagnetism & Aeronomy, 2014, v. 54, n. 4, p. 468, doi. 10.1134/S0016793214040124
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- Article
Modeling an experiment on radio sounding of the ionosphere from the artificial earth satellite Kosmos 1809 in the presence of vertical electron concentration inhomogeneities in the Arctic region.
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- Geomagnetism & Aeronomy, 2012, v. 52, n. 2, p. 229, doi. 10.1134/S0016793212020041
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- Article
Influence of shape of GaN/AlN quantum dots on luminescence decay law.
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- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 4, p. 653, doi. 10.1002/pssa.201100649
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- Article
Dislocation-related photoluminescence from processed Si.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 243, doi. 10.1007/s10854-007-9509-9
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- Article
Luminescent characteristics of tetraphenylporphyrin and its derivatives with lutetium.
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- Optics & Spectroscopy, 2009, v. 106, n. 5, p. 672, doi. 10.1134/S0030400X09050087
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- Article
Nonlinear Optical Response of an Excited 1/3 Laughlin Liquid.
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- JETP Letters, 2023, v. 118, n. 6, p. 455, doi. 10.1134/S0021364023602403
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- Article
Resonant Light Reflection in the 1/3 Laughlin State.
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- JETP Letters, 2021, v. 114, n. 7, p. 412, doi. 10.1134/S0021364021190115
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- Article
Resonant Photoluminescence of a Two-Dimensional Electron System upon the Formation of a Bulk 1/3 State of the Fractional Hall Effect.
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- JETP Letters, 2020, v. 112, n. 8, p. 485, doi. 10.1134/S0021364020200096
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- Article
Thermalization and Transport in Dense Ensembles of Triplet Magnetoexcitons.
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- JETP Letters, 2019, v. 110, n. 4, p. 284, doi. 10.1134/S0021364019160136
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- Article
Carbon Materials in Heat-Loaded Units of Traveling Wave Tubes and Klystrons (Review).
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- Journal of Communications Technology & Electronics, 2022, v. 67, n. 10, p. 1198, doi. 10.1134/S1064226922100102
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- Article
Mechanisms of Optical Gain in Heavily Doped Al<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N:Si Structures (x = 0.56–1).
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- Semiconductors, 2024, v. 58, n. 5, p. 386, doi. 10.1134/S1063782624050026
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- Article
The Electrochemical Profiling of n<sup>+</sup>/n GaAs Structures for Field-Effect Transistors.
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- Semiconductors, 2024, v. 58, n. 3, p. 254, doi. 10.1134/S1063782624030126
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- Article
Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers.
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- Semiconductors, 2022, v. 56, n. 6, p. 352, doi. 10.1134/S1063782622070077
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- Article
GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow.
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- Semiconductors, 2022, v. 56, n. 6, p. 340, doi. 10.1134/S1063782622070053
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- Article
Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux.
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- Semiconductors, 2021, v. 55, n. 11, p. 823, doi. 10.1134/S1063782621100080
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- Article
On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique.
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- Semiconductors, 2019, v. 53, n. 11, p. 1540, doi. 10.1134/S1063782619110198
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- Article
Formation of a Graphene-Like SiN Layer on the Surface Si(111).
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- Semiconductors, 2018, v. 52, n. 12, p. 1511, doi. 10.1134/S1063782618120151
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- Article
Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers.
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- Semiconductors, 2018, v. 52, n. 6, p. 789, doi. 10.1134/S1063782618060143
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- Article
Long-Lived Magnetoexcitons and Two-Dimensional Magnetofermionic Condensate in GaAs/AlGaAs Heterostructure.
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- Semiconductors, 2018, v. 52, n. 5, p. 575, doi. 10.1134/S1063782618050160
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- Article
Recombination of charge carriers in the GaAs-based p- i- n diode.
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- Semiconductors, 2010, v. 44, n. 10, p. 1362, doi. 10.1134/S1063782610100209
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- Article
The form of the profile of heterointerfaces in (311)Ga GaAs/AlAs structures.
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- Semiconductors, 2010, v. 44, n. 3, p. 341, doi. 10.1134/S1063782610030127
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- Article
Nonradiative recombination in GaN quantum dots formed in the AlN matrix.
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- Semiconductors, 2009, v. 43, n. 6, p. 768, doi. 10.1134/S1063782609060165
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- Article
Changes in optical properties of CdS nanoclusters in langmuir-blodgett films on passivation in ammonia.
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- Semiconductors, 2008, v. 42, n. 6, p. 702, doi. 10.1134/S1063782608060110
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- Article
Mechanism of the effect of the electric field of a surface acoustic wave on the low-temperature photoluminescence kinetics in type-II GaAs/AlAs superlattices.
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- Semiconductors, 2007, v. 41, n. 2, p. 205, doi. 10.1134/S1063782607020170
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- Article
Exciton-polariton transition induced by elastic exciton-exciton collisions in ultrahigh quality AIGaAs alloys.
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- Semiconductors, 2006, v. 40, n. 5, p. 527, doi. 10.1134/S1063782606050046
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- Article
Photoluminescence of Silicon Nanocrystals under the Effect of an Electric Field.
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- Semiconductors, 2005, v. 39, n. 11, p. 1319, doi. 10.1134/1.2128458
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- Article
Efficient Near IR Photoluminescence from Gallium Nitride Layers Doped with Arsenic.
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- Semiconductors, 2005, v. 39, n. 1, p. 73, doi. 10.1134/1.1852649
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- Article
Ge/Si Waveguide Photodiodes with Built-In Layers of Ge Quantum Dots for Fiber-Optic Communication Lines.
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- Semiconductors, 2004, v. 38, n. 10, p. 1225, doi. 10.1134/1.1808834
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- Article
Effect of Uniform Compression on Photoluminescence Spectra of GaAs Layers Heavily Doped with Beryllium.
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- Semiconductors, 2004, v. 38, n. 3, p. 277, doi. 10.1134/1.1682326
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- Article
A Composite Material in the Al – B – C System.
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- Refractories & Industrial Ceramics, 2003, v. 44, n. 2, p. 89, doi. 10.1023/A:1024758926179
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- Article
Use of Disthene-Sillimanite in the Production of Porous Permeable Ceramics.
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- Glass & Ceramics, 2004, v. 61, n. 5/6, p. 151, doi. 10.1023/B:GLAC.0000043077.68310.fe
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- Article
A suite of experimental conditions for photoluminescence monitoring of a heterojunction bipolar transistor structure.
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- Technical Physics, 1997, v. 42, n. 12, p. 1395, doi. 10.1134/1.1258884
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- Article
Author Correction: Long-range non-diffusive spin transfer in a Hall insulator.
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- 2018
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- Correction Notice
Using acoustic field energy to decrease dust discharge from the working space of the Vanyukov furnace.
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- Russian Journal of NonFerrous Metals, 2017, v. 58, n. 5, p. 457, doi. 10.3103/S1067821217050108
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- Article
Liquid phase epitaxial growth of undoped gallium arsenide from bismuth and gallium melts.
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- Crystal Research & Technology, 1989, v. 24, n. 2, p. 235, doi. 10.1002/crat.2170240221
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- Article
Radiosounding of the High-Latitude Ionosphere with the Arktika-M Hydrometeorological Complex.
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- Solar System Research, 2018, v. 52, n. 7, p. 684, doi. 10.1134/S0038094618070043
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- Article
Ionospheric effects induced by the Chelyabinsk meteor.
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- Solar System Research, 2013, v. 47, n. 4, p. 280, doi. 10.1134/S0038094613040138
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- Article
Photoluminescence Kinetics of Wurtzite GaN Quantum Dots in an AlN Matrix.
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- JETP Letters, 2005, v. 81, n. 2, p. 62, doi. 10.1134/1.1887916
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- Article
Observation of Exchange Interaction Effects under Optical Orientation of Excitons in AlGaAs.
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- JETP Letters, 2003, v. 77, n. 10, p. 561, doi. 10.1134/1.1595696
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- Article
Millisecond Photoluminescence Kinetics in a System of Direct-Bandgap InAs Quantum Dots in an AlAs Matrix.
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- JETP Letters, 2003, v. 77, n. 7, p. 389, doi. 10.1134/1.1581967
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- Article
Polariton Luminescence in High-Purity Layers of AlGaAs Solid Solutions.
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- JETP Letters, 2000, v. 71, n. 4, p. 148, doi. 10.1134/1.568301
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- Article
Mobile line in the acceptor photoluminescence spectrum of “pure” GaAs.
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- JETP Letters, 1997, v. 65, n. 1, p. 86, doi. 10.1134/1.567330
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- Article
Recombination Kinetics of Excitons and Trions in Free-Standing CdS Quantum Dots Synthesized by the Langmuir–Blodgett Method.
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- Journal of Experimental & Theoretical Physics, 2022, v. 135, n. 2, p. 215, doi. 10.1134/S1063776122080052
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- Article
Radar-Absorbing Materials for Spacecraft.
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- Cosmic Research, 2020, v. 58, n. 5, p. 372, doi. 10.1134/S0010952520050068
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- Article
Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 40
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- Article
Use of high-purity Al[sub x]Ga[sub 1-x]As layers in epitaxial structures for high-power microwave field-effect transistors.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 595, doi. 10.1134/1.1262567
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- Article
GaAs/AlGaAs- and InGaAs/AlGaAs-Heterostructures for High-Power Semiconductor Infrared Emitters.
- Published in:
- Technical Physics, 2024, v. 69, n. 2, p. 249, doi. 10.1134/S106378422401016X
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- Article