Works by Zhukov, A. E.

Results: 208
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    LIGHT EMISSION, ABSORPTION AND AMPLIFICATION IN InAs/GaAs QUANTUM DOTS AND GaAs/AlGaAs QUANTUM WELLS RESULTING FROM OPTICAL PUMPING.

    Published in:
    International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 241, doi. 10.1142/S0219581X0700464X
    By:
    • FIRSOV, D. A.;
    • VOROBJEV, L. E.;
    • BARZILOVICH, M. A.;
    • YU. PANEVIN, V.;
    • MIKHAYLOV, I. V.;
    • FEDOSOV, N. K.;
    • SHALYGIN, V. A.;
    • TONKIKH, A. A.;
    • POLYAKOV, N. K.;
    • SAMSONENKO, YU. B.;
    • CIRLIN, G. E.;
    • ZHUKOV, A. E.;
    • PIKHTIN, N. A.;
    • TARASOV, I. S.;
    • USTINOV, V. M.;
    • JULIEN, F. H.;
    • SEKOWSKI, M.;
    • HANNA, S.;
    • SEILMEIER, A.
    Publication type:
    Article
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    New Silica Laser-Optimized Multimode Optical Fibers with Extremely Enlarged 100-μm Core Diameter for Gigabit Onboard and Industrial Networks.

    Published in:
    Fibers, 2020, v. 8, n. 3, p. 18, doi. 10.3390/fib8030018
    By:
    • Burdin, Vladimir A.;
    • Dashkov, Michael V.;
    • Demidov, Vladimir V.;
    • Dukelskii, Konstantin V.;
    • Evtushenko, Alexander S.;
    • Kuznetsov, Artem A.;
    • Matrosova, Alexandra S.;
    • Morozov, Oleg G.;
    • Ter-Nersesyants, Egishe V.;
    • Vasilets, Alexander A.;
    • Zaitseva, Elena S.;
    • Zhukov, Alexander E.;
    • Bourdine, Anton V.
    Publication type:
    Article
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    Generation of Nanometer Wavelength Acoustic Waves.

    Published in:
    Journal of Nano- & Electronic Physics, 2016, v. 8, n. 4, p. 1, doi. 10.21272/jnep.8(4(1)).04020
    By:
    • Komina, O. Yu.;
    • Adamova, M. E.;
    • Zhukov, E. A.;
    • Kuz'menko, A. P.;
    • Zhukova, V. I.
    Publication type:
    Article
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    Power Conversion Efficiency of Quantum Dot Laser Diodes.

    Published in:
    Semiconductors, 2000, v. 34, n. 5, p. 609, doi. 10.1134/1.1188038
    By:
    • Zhukov, A. E.;
    • Kovsh, A. R.;
    • Mikhrin, S. S.;
    • Maleev, N. A.;
    • Odnoblyudov, V. A.;
    • Ustinov, V. M.;
    • Shernyakov, Yu. M.;
    • Kondrat’eva, E. Yu.;
    • Livshits, D. A.;
    • Tarasov, I. S.;
    • Ledentsov, N. N.;
    • Kop’ev, P. S.;
    • Alferov, Zh. I.;
    • Bimberg, D.
    Publication type:
    Article
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    Recombination Emission from InAs Quantum Dots Grown on Vicinal GaAs Surfaces.

    Published in:
    Semiconductors, 2000, v. 34, n. 4, p. 453, doi. 10.1134/1.1188007
    By:
    • Talalaev, V. G.;
    • Novikov, B. V.;
    • Verbin, S. Yu.;
    • Novikov, A. B.;
    • Thath, Dinh Son;
    • Shchur, I. V.;
    • Gobsch, G.;
    • Goldhahn, R.;
    • Stein, N.;
    • Golombek, A.;
    • Tsyrlin, G. É.;
    • Petrov, V. N.;
    • Ustinov, V. M.;
    • Zhukov, A. E.;
    • Egorov, A. Yu.
    Publication type:
    Article
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    Gain characteristics of quantum-dot injection lasers.

    Published in:
    Semiconductors, 1999, v. 33, n. 9, p. 1013, doi. 10.1134/1.1187828
    By:
    • Zhukov, A. E.;
    • Kovsh, A. R.;
    • Ustinov, V. M.;
    • Egorov, A. Yu.;
    • Ledentsov, N. N.;
    • Tsatsul’nikov, A. F.;
    • Maksimov, M. V.;
    • Zaıtsev, S. V.;
    • Shernyakov, Yu. M.;
    • Lunev, A. V.;
    • Kop’ev, P. S.;
    • Alferov, Zh. I.;
    • Bimberg, D.
    Publication type:
    Article
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    Heteroepitaxial growth of InAs on Si: a new type of quantum dot.

    Published in:
    Semiconductors, 1999, v. 33, n. 9, p. 972, doi. 10.1134/1.1187815
    By:
    • Cyrlin, G. E.;
    • Petrov, V. N.;
    • Dubrovskii, V. G.;
    • Samsonenko, Yu. B.;
    • Polyakov, N. K.;
    • Golubok, A. O.;
    • Masalov, S. A.;
    • Komyak, N. I.;
    • Ustinov, V. M.;
    • Egorov, A. Yu.;
    • Kovsh, A. R.;
    • Maximov, M. V.;
    • Tsatsul’nikov, A. F.;
    • Volovik, B. V.;
    • Zhukov, A. E.;
    • Kop’ev, P. S.;
    • Ledentsov, N. N.;
    • Alferov, Zh. I.;
    • Bimberg, D.
    Publication type:
    Article
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    Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures.

    Published in:
    Semiconductors, 1999, v. 33, n. 8, p. 929, doi. 10.1134/1.1187631
    By:
    • Kovsh, A. R.;
    • Zhukov, A. E.;
    • Maleev, N. A.;
    • Mikhrin, S. S.;
    • Ustinov, V. M.;
    • Tsatsul’nikov, A. F.;
    • Maksimov, M. V.;
    • Volovik, B. V.;
    • Bedarev, D. A.;
    • Shernyakov, Yu. M.;
    • Kondrat’eva, E. Yu.;
    • Ledentsov, N. N.;
    • Kop’ev, P. S.;
    • Alferov, Zh. I.;
    • Bimberg, D.
    Publication type:
    Article
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    Lateral association of vertically coupled quantum dots.

    Published in:
    Semiconductors, 1997, v. 31, n. 7, p. 722, doi. 10.1134/1.1187076
    By:
    • Tsatsul’nikov, A. F.;
    • Egorov, A. Yu.;
    • Zhukov, A. E.;
    • Kovsh, A. R.;
    • Ustinov, V. M.;
    • Ledentsov, N. N.;
    • Maksimov, M. V.;
    • Volovik, B. V.;
    • Suvorova, A. A.;
    • Bert, N. A.;
    • Kop’ev, P. S.
    Publication type:
    Article
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    Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix.

    Published in:
    Semiconductors, 1997, v. 31, n. 6, p. 571, doi. 10.1134/1.1187318
    By:
    • Maksimov, M. V.;
    • Shernyakov, Yu. M.;
    • Zaıtsev, S. V.;
    • Gordeev, N. Yu.;
    • Egorov,, A. Yu.;
    • Zhukov, A. E.;
    • Kop’ev, P. S.;
    • Kosogov, A. O.;
    • Sakharov, A. V.;
    • Ledentsov,, N. N.;
    • Ustinov, V. M.;
    • Tsatsul’nikov, A. F.;
    • Alferov, Zh. I.;
    • Böhrer, J.;
    • Bimberg, D.
    Publication type:
    Article
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