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Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots.
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- Semiconductors, 2023, v. 57, n. 13, p. 594, doi. 10.1134/S1063782623050093
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- Article
Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers.
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- Semiconductors, 2023, v. 57, n. 13, p. 604, doi. 10.1134/S1063782623030120
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- Article
Model for Speed Performance of Quantum-Dot Waveguide Photodiode.
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- Semiconductors, 2023, v. 57, n. 13, p. 632, doi. 10.1134/S1063782623050184
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- Article
Two-State Lasing in Injection Microdisks with InAs/InGaAs Quantum Dots.
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- Technical Physics Letters, 2023, v. 49, p. S330, doi. 10.1134/S1063785023010236
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- Article
Temperature-Dependent Characteristics of 1.3 μm InAs/InGaAs/GaAs Quantum Dot Ring Lasers.
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- Technical Physics Letters, 2023, v. 49, p. S196, doi. 10.1134/S1063785023900728
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- Article
Information Encoding Using Two-Level Generation in a Quantum Dot Laser.
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- Technical Physics Letters, 2023, v. 49, p. S219, doi. 10.1134/S1063785023900832
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- Article
A New Approach for the Synthesis of 2,3,4а,6,7,8а,9,10-Octaaza-4,8-dioxo-3,4,4a,7,8,8а,9,9a,10,10а-decahydroanthracene and High-Energy Performance Characterization of Its Dinitramide Salt.
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- Materials (1996-1944), 2023, v. 16, n. 23, p. 7437, doi. 10.3390/ma16237437
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- Article
Temperature Dependencies of Radiative and Nonradiative Carrier Lifetimes in InGaAs Quantum Well-Dots.
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- Semiconductors, 2023, v. 57, n. 11, p. 488, doi. 10.1134/S1063782623080110
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- Article
The Influence of the Waveguide Layer Composition on the Emission Parameters of 1550 nm InGaAs/InP Laser Heterostructures.
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- Semiconductors, 2023, v. 57, n. 11, p. 492, doi. 10.1134/S1063782623080134
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- Article
Internal Loss in Diode Lasers with Quantum Well-Dots.
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- Semiconductors, 2023, v. 57, n. 11, p. 513, doi. 10.1134/S1063782623090191
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- Article
The squeezed dark nuclear spin state in lead halide perovskites.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-42265-8
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- Article
Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers.
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- Photonics, 2023, v. 10, n. 10, p. 1090, doi. 10.3390/photonics10101090
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- Article
Progress of Edge-Emitting Diode Lasers Based on Coupled-Waveguide Concept.
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- Micromachines, 2023, v. 14, n. 6, p. 1271, doi. 10.3390/mi14061271
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- Article
Adducts of the Zinc Salt of Dinitramic Acid.
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- Materials (1996-1944), 2023, v. 16, n. 1, p. 70, doi. 10.3390/ma16010070
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- Article
eco2AI: Carbon Emissions Tracking of Machine Learning Models as the First Step Towards Sustainable AI.
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- Doklady Mathematics, 2022, v. 106, p. S118, doi. 10.1134/S1064562422060230
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- Article
Synthesis of Nitro- and Acetyl Derivatives of 3,7,10-Trioxo-2,4,6,8,9,11-hexaaza[3.3.3]propellane.
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- Materials (1996-1944), 2022, v. 15, n. 23, p. 8320, doi. 10.3390/ma15238320
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- Article
Investigation of 1,4-Substituted 1,2,3-Triazole Derivatives as Antiarrhythmics: Synthesis, Structure, and Properties.
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- Pharmaceuticals (14248247), 2022, v. 15, n. 12, p. 1443, doi. 10.3390/ph15121443
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- Article
Macrocycle as a "Container" for Dinitramide Salts.
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- Materials (1996-1944), 2022, v. 15, n. 19, p. 6958, doi. 10.3390/ma15196958
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- Article
Expression of NLRP3 Inflammasomes in Neurogenic Niche Contributes to the Effect of Spatial Learning in Physiological Conditions but Not in Alzheimer's Type Neurodegeneration.
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- Cellular & Molecular Neurobiology, 2022, v. 42, n. 5, p. 1355, doi. 10.1007/s10571-020-01021-y
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- Article
The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap.
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- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-30701-0
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- Article
The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap.
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- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-30701-0
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- Publication type:
- Article
The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap.
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- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-30701-0
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- Article
Bimodality in the Electroluminescence Spectra of InGaAs Quantum Well–Dot Nanostructures.
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- Semiconductors, 2022, v. 56, n. 6, p. 329, doi. 10.1134/S106378262207003X
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- Article
Blocking-Layer Design for the Suppression of Parasitic Recombination in High-Power Laser Diodes with a GaAs Waveguide.
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- Semiconductors, 2022, v. 56, n. 4, p. 246, doi. 10.1134/S1063782622040029
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- Article
High-Speed Photodetectors Based on InGaAs/GaAs Quantum Well–Dots.
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- Technical Physics Letters, 2022, v. 48, n. 3, p. 161, doi. 10.1134/S1063785022040186
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- Article
Increase in the Efficiency of a Tandem Semiconductor Laser–Optical Amplifier Based on Self-Organizing Quantum Dots.
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- Semiconductors, 2022, v. 56, n. 2, p. 139, doi. 10.1134/S1063782622010195
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- Article
An Investigation of the Sensitivity of a Microdisk Laser to a Change in the Refractive Index of the Environment.
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- Technical Physics Letters, 2022, v. 48, n. 2, p. 74, doi. 10.1134/S1063785022030063
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- Article
Increasing the Optical Power of InGaAs/GaAs Microdisk Lasers Transferred to a Silicon Substrate by Thermal Compression.
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- Technical Physics Letters, 2022, v. 48, n. 2, p. 90, doi. 10.1134/S1063785022030105
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- Article
Saturation Power of a Semiconductor Optical Amplifier Based on Self-Organized Quantum Dots.
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- Semiconductors, 2021, v. 55, n. 1, p. S67, doi. 10.1134/S1063782621090256
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- Article
Energy Consumption at High-Frequency Modulation of an Uncooled InGaAs/GaAs/AlGaAs Microdisk Laser.
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- Technical Physics Letters, 2021, v. 47, n. 9, p. 685, doi. 10.1134/S1063785021070142
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- Article
Quantum-dot microlasers based on whispering gallery mode resonators.
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- Light: Science & Applications, 2021, v. 10, n. 1, p. 1, doi. 10.1038/s41377-021-00525-6
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- Article
Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots.
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- Semiconductors, 2021, v. 55, n. 3, p. 333, doi. 10.1134/S1063782621030167
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Taking Account of the Substrate in Calculation of the Electrical Resistance of Microdisk Lasers.
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- Semiconductors, 2021, v. 55, n. 2, p. 250, doi. 10.1134/S1063782621020226
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- Article
High-Speed Photodetectors for the 950–1100 nm Optical Range Based on In0.4Ga0.6As/GaAs Quantum Well-Dot Nanostructures.
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- Technical Physics Letters, 2020, v. 46, n. 12, p. 1219, doi. 10.1134/S106378502012024X
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Specific Growth Features of Nanostructures for Terahertz Quantum Cascade Lasers and Their Physical Properties.
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- Semiconductors, 2020, v. 54, n. 9, p. 1092, doi. 10.1134/S1063782620090298
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- Article
Lasing of Injection Microdisks with InAs/InGaAs/GaAs Quantum Dots Transferred to Silicon.
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- Technical Physics Letters, 2020, v. 46, n. 8, p. 783, doi. 10.1134/S1063785020080295
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- Article
A Micro Optocoupler Based on a Microdisk Laser and a Photodetector with an Active Region Based on Quantum Well-Dots.
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- Technical Physics Letters, 2020, v. 46, n. 7, p. 629, doi. 10.1134/S1063785020070111
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- Article
Ultimate Lasing Temperature of Microdisk Lasers.
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- Semiconductors, 2020, v. 54, n. 6, p. 677, doi. 10.1134/S1063782620060172
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- Article
The Effect of Self-Heating on the Modulation Characteristics of a Microdisk Laser.
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- Technical Physics Letters, 2020, v. 46, n. 6, p. 515, doi. 10.1134/S1063785020060152
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- Article
InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods.
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- Materials (1996-1944), 2020, v. 13, n. 10, p. 2315, doi. 10.3390/ma13102315
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- Article
New Silica Laser-Optimized Multimode Optical Fibers with Extremely Enlarged 100-μm Core Diameter for Gigabit Onboard and Industrial Networks.
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- Fibers, 2020, v. 8, n. 3, p. 18, doi. 10.3390/fib8030018
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- Article
Parasitic Recombination in a Laser with Asymmetric Barrier Layers.
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- Semiconductors, 2020, v. 54, n. 3, p. 366, doi. 10.1134/S1063782620030203
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- Article
Experimental and Theoretical Examination of the Photosensitivity Spectra of Structures with In0.4Ga0.6As Quantum Well-Dots of the Optical Range (900–1050 nm).
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- Technical Physics Letters, 2020, v. 46, n. 3, p. 203, doi. 10.1134/S1063785020030116
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- Article
Light Emitting Devices Based on Quantum Well-Dots.
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- Applied Sciences (2076-3417), 2020, v. 10, n. 3, p. 1038, doi. 10.3390/app10031038
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- Article
Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots.
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- Semiconductors, 2020, v. 54, n. 2, p. 263, doi. 10.1134/S1063782620020177
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- Article
Luminescence Excitation Spectroscopy of InAs/InGaAs/GaAs Quantum-Dot Arrays in the Temperature Range between 20 and 300 K.
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- Optics & Spectroscopy, 2020, v. 128, n. 1, p. 106, doi. 10.1134/S0030400X20010208
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- Article
Spontaneous Emission in the Anti-Waveguiding VCSEL.
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- Semiconductors, 2019, v. 53, n. 14, p. 1876, doi. 10.1134/S1063782619140173
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- Article
Whispering Gallery Modes and Spontaneous Emission in Compact VCSEL Structures.
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- Semiconductors, 2019, v. 53, n. 14, p. 1880, doi. 10.1134/S1063782619140185
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- Article
Record Low Threshold Current Density in Quantum Dot Microdisk Laser.
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- Semiconductors, 2019, v. 53, n. 14, p. 1888, doi. 10.1134/S106378261914015X
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- Article
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm).
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- Semiconductors, 2019, v. 53, n. 12, p. 1699, doi. 10.1134/S1063782619160218
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- Article