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Detection of Ramsey Oscillations in Germanium Doped with Shallow Donors upon the Excitation of the 1s → 2p0 Transition.
Published in:
JETP Letters, 2022, v. 116, n. 3, p. 137, doi. 10.1134/S0021364022601191
By:
- Zhukavin, R. Kh.;
- Bushuikin, P. A.;
- Kukotenko, V. V.;
- Choporova, Yu. Yu.;
- Deßmann, N.;
- Kovalevsky, K. A.;
- Tsyplenkov, V. V.;
- Gerasimov, V. V.;
- Knyazev, B. A.;
- Abrosimov, N. V.;
- Shastin, V. N.
Publication type:
Article
Relaxation Times and Population Inversion of Excited States of Arsenic Donors in Germanium.
Published in:
JETP Letters, 2019, v. 110, n. 10, p. 677, doi. 10.1134/S0021364019220144
By:
- Zhukavin, R. Kh.;
- Kovalevskii, K. A.;
- Choporova, Yu. Yu.;
- Tsyplenkov, V. V.;
- Gerasimov, V. V.;
- Bushuikin, P. A.;
- Knyazev, B. A.;
- Abrosimov, N. V.;
- Pavlov, S. G.;
- Hübers, H.-W.;
- Shastin, V. N.
Publication type:
Article
Optical Excitation of Spin-Triplet States of Two-Electron Donors in Silicon.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 284, doi. 10.1134/S1063782624030175
By:
- Tsyplenkov, V. V.;
- Zhukavin, R. Kh.;
- Shastin, V. N.
Publication type:
Article
Multi-Phonon Relaxation of the 1s(T2) Triplet of Neutral Magnesium Donors in Silicon.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 202, doi. 10.1134/S1063782624030023
By:
- Bekin, N. A.;
- Zhukavin, R. Kh.;
- Tsyplenkov, V. V.;
- Shastin, V. N.
Publication type:
Article
Double Magnesium Donors as a Potential Active Medium in the Terahertz Range.
Published in:
Semiconductors, 2024, v. 58, n. 1, p. 86, doi. 10.1134/S1063782624010172
By:
- Zhukavin, R. Kh.;
- Tsyplenkov, V. V.;
- Kovalevsky, K. A.;
- Astrov, Yu. A.;
- Lodygin, A. N.;
- Shuman, V. B.;
- Portsel, L. M.;
- Abrosimov, N. V.;
- Shastin, V. N.
Publication type:
Article
Terahertz Stimulated Emission under the Optical Resonant Excitation of Germanium Doped with Shallow Donors.
Published in:
Semiconductors, 2021, v. 55, n. 10, p. 804, doi. 10.1134/S1063782621090244
By:
- Zhukavin, R. Kh.
Publication type:
Article
Relaxation of the Excited States of Arsenic in Strained Germanium.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1347, doi. 10.1134/S1063782620100188
By:
- Kovalevsky, K. A.;
- Choporova, Yu. Yu.;
- Zhukavin, R. Kh.;
- Abrosimov, N. V.;
- Pavlov, S. G.;
- Hübers, H.-W.;
- Tsyplenkov, V. V.;
- Kukotenko, V. D.;
- Knyazev, B. A.;
- Shastin, V. N.
Publication type:
Article
On the Possibility of Ramsey Interference in Germanium Doped with Shallow Impurities.
Published in:
Semiconductors, 2020, v. 54, n. 8, p. 961, doi. 10.1134/S1063782620080242
By:
- Tsyplenkov, V. V.;
- Zhukavin, R. Kh.;
- Shastin, V. N.
Publication type:
Article
Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si:Bi.
Published in:
Semiconductors, 2020, v. 54, n. 8, p. 969, doi. 10.1134/S1063782620080278
By:
- Zhukavin, R. Kh.;
- Kovalevsky, K. A.;
- Pavlov, S. G.;
- Deßmann, N.;
- Pohl, A.;
- Tsyplenkov, V. V.;
- Abrosimov, N. V.;
- Riemann, H.;
- Hübers, H.-W.;
- Shastin, V. N.
Publication type:
Article
Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation.
Published in:
Semiconductors, 2019, v. 53, n. 9, p. 1255, doi. 10.1134/S1063782619090288
By:
- Zhukavin, R. Kh.;
- Pavlov, S. G.;
- Pohl, A.;
- Abrosimov, N. V.;
- Riemann, H.;
- Redlich, B.;
- Hübers, H.-W.;
- Shastin, V. N.
Publication type:
Article
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission.
Published in:
Semiconductors, 2019, v. 53, n. 9, p. 1234, doi. 10.1134/S1063782619090197
By:
- Shastin, V. N.;
- Zhukavin, R. Kh.;
- Kovalevsky, K. A.;
- Tsyplenkov, V. V.;
- Rumyantsev, V. V.;
- Shengurov, D. V.;
- Pavlov, S. G.;
- Shuman, V. B.;
- Portsel, L. M.;
- Lodygin, A. N.;
- Astrov, Yu. A.;
- Abrosimov, N. V.;
- Klopf, J. M.;
- Hübers, H.-W.
Publication type:
Article
Terahertz Luminescence of GaAs-Based Heterostructures with Quantum Wells under the Optical Excitation of Donors.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 67, doi. 10.1134/1.1852648
By:
- Bekin, N. A.;
- Zhukavin, R. Kh.;
- Kovalevskii, K. A.;
- Pavlov, S. G.;
- Zvonkov, B. N.;
- Uskova, E. A.;
- Shastin, V. N.
Publication type:
Article
Dynamics of non-equilibrium charge carriers in p-germanium doped by gallium.
Published in:
Physica Status Solidi (B), 2017, v. 254, n. 6, p. n/a, doi. 10.1002/pssb.201600803
By:
- Deßmann, Nils;
- Pavlov, S. G.;
- Tsyplenkov, V. V.;
- Orlova, E. E.;
- Pohl, A.;
- Shastin, V. N.;
- Zhukavin, R. Kh.;
- Winnerl, S.;
- Mittendorff, M.;
- Klopf, J. M.;
- Abrosimov, N. V.;
- Schneider, H.;
- Hübers, H.‐W.
Publication type:
Article
The physical principles of terahertz silicon lasers based on intracenter transitions.
Published in:
Physica Status Solidi (B), 2013, v. 250, n. 1, p. 9, doi. 10.1002/pssb.201248322
By:
- Pavlov, S. G.;
- Zhukavin, R. Kh.;
- Shastin, V. N.;
- Hübers, H. ‐ W.
Publication type:
Article
Front Cover: The physical principles of terahertz silicon lasers based on intracenter transitions (Phys. Status Solidi B 1/2013).
Published in:
Physica Status Solidi (B), 2013, v. 250, n. 1, p. n/a, doi. 10.1002/pssb.201390000
By:
- Pavlov, S. G.;
- Zhukavin, R. Kh.;
- Shastin, V. N.;
- Hübers, H. ‐ W.
Publication type:
Article
Optically pumped terahertz semiconductor bulk lasers.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 126, doi. 10.1002/pssb.200301532
By:
- Pavlov, S. G.;
- Hübers, H.-W.;
- Orlova, E. E.;
- Zhukavin, R. Kh.;
- Riemann, H.;
- Nakata, H.;
- Shastin, V. N.
Publication type:
Article
Terahertz Emission Spectra of Optically Pumped Silicon Lasers.
Published in:
Physica Status Solidi (B), 2002, v. 233, n. 2, p. 189, doi. 10.1002/1521-3951(200209)233:2<189::AID-PSSB189>3.0.CO;2-V
By:
- Hübers, H.-W.;
- Pavlov, S.G.;
- Greiner-Bär, M.;
- Rümmeli, M.H.;
- Kimmitt, M.F.;
- Zhukavin, R. Kh.;
- Riemann, H.;
- Shastin, V.N.
Publication type:
Article
Far-Infrared Hole Absorption in InxGa1-xAs/GaAs MQW Heterostructures with δ-Doped Barriers.
Published in:
Physica Status Solidi (B), 1997, v. 204, n. 1, p. 174, doi. 10.1002/1521-3951(199711)204:1<174::AID-PSSB174>3.0.CO;2-V
By:
- Shastin, V. N.;
- Pavlov, S. G.;
- Muravjov, A. V.;
- Orlova, E. E.;
- Zhukavin, R. Kh.;
- Zvonkov, B. N.
Publication type:
Article

Found: 18

Detection of Ramsey Oscillations in Germanium Doped with Shallow Donors upon the Excitation of the 1s → 2p<sub>0</sub> Transition.

Relaxation Times and Population Inversion of Excited States of Arsenic Donors in Germanium.

Optical Excitation of Spin-Triplet States of Two-Electron Donors in Silicon.

Multi-Phonon Relaxation of the 1s(T<sub>2</sub>) Triplet of Neutral Magnesium Donors in Silicon.

Double Magnesium Donors as a Potential Active Medium in the Terahertz Range.

Terahertz Stimulated Emission under the Optical Resonant Excitation of Germanium Doped with Shallow Donors.

Relaxation of the Excited States of Arsenic in Strained Germanium.

On the Possibility of Ramsey Interference in Germanium Doped with Shallow Impurities.

Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si:Bi.

Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation.

Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission.

Terahertz Luminescence of GaAs-Based Heterostructures with Quantum Wells under the Optical Excitation of Donors.

Dynamics of non-equilibrium charge carriers in p-germanium doped by gallium.

The physical principles of terahertz silicon lasers based on intracenter transitions.

Front Cover: The physical principles of terahertz silicon lasers based on intracenter transitions (Phys. Status Solidi B 1/2013).

Optically pumped terahertz semiconductor bulk lasers.

Terahertz Emission Spectra of Optically Pumped Silicon Lasers.

Far-Infrared Hole Absorption in In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs MQW Heterostructures with δ-Doped Barriers.