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Works by Zhu, Quanzhou

Results: 3

1

Analog Hf<sub>x</sub>Zr<sub>1‐x</sub>O<sub>2</sub> Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 4, p. 1, doi. 10.1002/aelm.202300508

By:

Zhu, Quanzhou;
Jiang, Biyi;
Lan, Jun;
Hou, Zeyu;
Dong, Yida;
Wang, Zhongrui;
Feng, Xuewei;
Shen, Mei;
Yu, Hongyu;
Chen, Kai;
Li, Jiamin;
Lin, Longyang;
Zhou, Feichi;
Li, Yida

Publication type:

Article

2

Analog Hf<sub>x</sub>Zr<sub>1‐x</sub>O<sub>2</sub> Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network (Adv. Electron. Mater. 4/2024).

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 4, p. 1, doi. 10.1002/aelm.202300508

By:

Zhu, Quanzhou;
Jiang, Biyi;
Lan, Jun;
Hou, Zeyu;
Dong, Yida;
Wang, Zhongrui;
Feng, Xuewei;
Shen, Mei;
Yu, Hongyu;
Chen, Kai;
Li, Jiamin;
Lin, Longyang;
Zhou, Feichi;
Li, Yida

Publication type:

Article

3

Improved Performance of Hf<sub>x</sub>Zn<sub>y</sub>O‐Based RRAM and its Switching Characteristics down to 4 K Temperature.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201250

By:

Lan, Jun;
Li, Zhixiong;
Chen, Zhenjie;
Zhu, Quanzhou;
Wang, Wenhui;
Zaheer, Muhammad;
Lu, Jiqing;
Liang, Jinxuan;
Shen, Mei;
Chen, Peng;
Chen, Kai;
Zhang, Guobiao;
Wang, Zhongrui;
Zhou, Feichi;
Lin, Longyang;
Li, Yida

Publication type:

Article