Works by Zhou, Feichi

Results: 15

In-situ Observation of Cu Filaments Evolution in SiO2 layer.

Published in:

Microscopy & Microanalysis, 2017, v. 23, p. 1622, doi. 10.1017/S1431927617008777

By:

Zhi Zhang;
Fang Yuan;
Chunru Liu;
Feichi Zhou;
Hei Man Yau;
Wei Lu;
X.Y. Qiu;
Philip Wong, H. –S.;
Yang Chai;
Jiyan Dai

Publication type:

Article

Remarkably Enhanced Hydrogen Generation of Organolead Halide Perovskites via Piezocatalysis and Photocatalysis.

Published in:

Advanced Energy Materials, 2019, v. 9, n. 37, p. N.PAG, doi. 10.1002/aenm.201901801

By:

Wang, Mengye;
Zuo, Yunpeng;
Wang, Jingli;
Wang, Yi;
Shen, Xinpeng;
Qiu, Bocheng;
Cai, Lejuan;
Zhou, Feichi;
Lau, Shu Ping;
Chai, Yang

Publication type:

Article

A multi-terminal ion-controlled transistor with multifunctionality and wide temporal dynamics for reservoir computing.

Published in:

Nano Research, 2024, v. 17, n. 5, p. 4444, doi. 10.1007/s12274-023-6343-1

By:

Liu, Kekang;
Li, Jie;
Li, Fangzhou;
Lin, Yiyuan;
Liu, Hongrui;
Liang, Linzi;
Luo, Zhiyuan;
Liu, Wei;
Wang, Mengye;
Zhou, Feichi;
Liu, Yanghui

Publication type:

Article

Crypto primitive of MOCVD MoS2 transistors for highly secured physical unclonable functions.

Published in:

Nano Research, 2021, v. 14, n. 6, p. 1784, doi. 10.1007/s12274-020-3033-0

By:

Shao, Bangjie;
Choy, Tsz Hin;
Zhou, Feichi;
Chen, Jiewei;
Wang, Cong;
Park, Yong Ju;
Ahn, Jong-Hyun;
Chai, Yang

Publication type:

Article

Linear Classification Function Emulated by Pectin‐Based Polysaccharide‐Gated Multiterminal Neuron Transistors.

Published in:

Advanced Functional Materials, 2021, v. 31, n. 33, p. 1, doi. 10.1002/adfm.202102015

By:

Guo, Jianmiao;
Liu, Yanghui;
Zhou, Feichi;
Li, Fangzhou;
Li, Yingtao;
Huang, Feng

Publication type:

Article

Low‐Voltage, Optoelectronic CH3NH3PbI3−<italic>x</italic>Cl<italic>x</italic> Memory with Integrated Sensing and Logic Operations.

Published in:

Advanced Functional Materials, 2018, v. 28, n. 15, p. 1, doi. 10.1002/adfm.201800080

By:

Zhou, Feichi;
Liu, Yanghui;
Shen, Xinpeng;
Wang, Mengye;
Yuan, Fang;
Chai, Yang

Publication type:

Article

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 19, p. n/a, doi. 10.1002/adfm.201603484

By:

Zhao, Yuda;
Xu, Kang;
Pan, Feng;
Zhou, Changjian;
Zhou, Feichi;
Chai, Yang

Publication type:

Article

Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K.

Published in:

International Journal of Numerical Modelling, 2024, v. 37, n. 3, p. 1, doi. 10.1002/jnm.3258

By:

Su, Hao;
Cai, Yiyuan;
Lin, Yuhuan;
Xie, Yunfeng;
Mai, Yongfeng;
Zhou, Shenghua;
Hu, Guangchong;
He, Yu;
Zhou, Feichi;
Liu, Xiaoguang;
Lin, Longyang;
Li, Yida;
Yu, Hongyu;
Chen, Kai

Publication type:

Article

Full hardware implementation of neuromorphic visual system based on multimodal optoelectronic resistive memory arrays for versatile image processing.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-43944-2

By:

Zhou, Guangdong;
Li, Jie;
Song, Qunliang;
Wang, Lidan;
Ren, Zhijun;
Sun, Bai;
Hu, Xiaofang;
Wang, Wenhua;
Xu, Gaobo;
Chen, Xiaodie;
Cheng, Lan;
Zhou, Feichi;
Duan, Shukai

Publication type:

Article

CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-41868-5

By:

Wang, Wenhui;
Li, Ke;
Lan, Jun;
Shen, Mei;
Wang, Zhongrui;
Feng, Xuewei;
Yu, Hongyu;
Chen, Kai;
Li, Jiamin;
Zhou, Feichi;
Lin, Longyang;
Zhang, Panpan;
Li, Yida

Publication type:

Article

Analog HfxZr1‐xO2 Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 4, p. 1, doi. 10.1002/aelm.202300508

By:

Zhu, Quanzhou;
Jiang, Biyi;
Lan, Jun;
Hou, Zeyu;
Dong, Yida;
Wang, Zhongrui;
Feng, Xuewei;
Shen, Mei;
Yu, Hongyu;
Chen, Kai;
Li, Jiamin;
Lin, Longyang;
Zhou, Feichi;
Li, Yida

Publication type:

Article

Analog HfxZr1‐xO2 Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network (Adv. Electron. Mater. 4/2024).

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 4, p. 1, doi. 10.1002/aelm.202300508

By:

Zhu, Quanzhou;
Jiang, Biyi;
Lan, Jun;
Hou, Zeyu;
Dong, Yida;
Wang, Zhongrui;
Feng, Xuewei;
Shen, Mei;
Yu, Hongyu;
Chen, Kai;
Li, Jiamin;
Lin, Longyang;
Zhou, Feichi;
Li, Yida

Publication type:

Article

Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201250

By:

Lan, Jun;
Li, Zhixiong;
Chen, Zhenjie;
Zhu, Quanzhou;
Wang, Wenhui;
Zaheer, Muhammad;
Lu, Jiqing;
Liang, Jinxuan;
Shen, Mei;
Chen, Peng;
Chen, Kai;
Zhang, Guobiao;
Wang, Zhongrui;
Zhou, Feichi;
Lin, Longyang;
Li, Yida

Publication type:

Article

Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101127

By:

Zhou, Guangdong;
Wang, Zhongrui;
Sun, Bai;
Zhou, Feichi;
Sun, Linfeng;
Zhao, Hongbin;
Hu, Xiaofang;
Peng, Xiaoyan;
Yan, Jia;
Wang, Huamin;
Wang, Wenhua;
Li, Jie;
Yan, Bingtao;
Kuang, Dalong;
Wang, Yuchen;
Wang, Lidan;
Duan, Shukai

Publication type:

Article

Integrated In‐Memory Sensor and Computing of Artificial Vision Based on Full‐vdW Optoelectronic Ferroelectric Field‐Effect Transistor.

Published in:

Advanced Science, 2024, v. 11, n. 3, p. 1, doi. 10.1002/advs.202305679

By:

Wang, Peng;
Li, Jie;
Xue, Wuhong;
Ci, Wenjuan;
Jiang, Fengxian;
Shi, Lei;
Zhou, Feichi;
Zhou, Peng;
Xu, Xiaohong

Publication type:

Article

Works by Zhou, Feichi

In-situ Observation of Cu Filaments Evolution in SiO<sub>2</sub> layer.

Remarkably Enhanced Hydrogen Generation of Organolead Halide Perovskites via Piezocatalysis and Photocatalysis.

A multi-terminal ion-controlled transistor with multifunctionality and wide temporal dynamics for reservoir computing.

Crypto primitive of MOCVD MoS2 transistors for highly secured physical unclonable functions.

Linear Classification Function Emulated by Pectin‐Based Polysaccharide‐Gated Multiterminal Neuron Transistors.

Low‐Voltage, Optoelectronic CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3−</sub><italic><sub>x</sub></italic>Cl<italic><sub>x</sub></italic> Memory with Integrated Sensing and Logic Operations.

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors.

Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K.

Full hardware implementation of neuromorphic visual system based on multimodal optoelectronic resistive memory arrays for versatile image processing.

CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor.

Analog Hf<sub>x</sub>Zr<sub>1‐x</sub>O<sub>2</sub> Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network.

Analog Hf<sub>x</sub>Zr<sub>1‐x</sub>O<sub>2</sub> Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network (Adv. Electron. Mater. 4/2024).

Improved Performance of Hf<sub>x</sub>Zn<sub>y</sub>O‐Based RRAM and its Switching Characteristics down to 4 K Temperature.

Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing.

Integrated In‐Memory Sensor and Computing of Artificial Vision Based on Full‐vdW Optoelectronic Ferroelectric Field‐Effect Transistor.