Works by Zhilyaev, Yu. V.

Results: 28

Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1180, doi. 10.1134/S1063782613090212
By:
- Sachenko, A. V.;
- Belyaev, A. E.;
- Boltovets, N. S.;
- Zhilyaev, Yu. V.;
- Kapitanchuk, L. M.;
- Klad’ko, V. P.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Naumov, A. V.;
- Panteleev, V. N.;
- Sheremet, V. N.
Publication type:
Article
Sulfide passivation of III–V semiconductor surfaces: role of the sulfur ionic charge and of the reaction potential of the solution.
Published in:
Technical Physics, 1998, v. 43, n. 8, p. 983, doi. 10.1134/1.1259113
By:
- Bessolov, V. N.;
- Zhilyaev, Yu. V.;
- Konenkova, E. V.;
- Lebedev, M. V.
Publication type:
Article
Photoluminescence of n-GaN: influence of chemical treatment of the surface using sulfide solutions.
Published in:
Technical Physics Letters, 1998, v. 24, n. 12, p. 986, doi. 10.1134/1.1262343
By:
- Zhilyaev, Yu. V.;
- Kompan, M. E.;
- Konenkova, E. V.;
- Mokeev, A. S.;
- Raevskiı, S. D.
Publication type:
Article
Behavior of epitaxial GaAs layers as α particle detectors.
Published in:
Technical Physics Letters, 1998, v. 24, n. 4, p. 250, doi. 10.1134/1.1262073
By:
- Botnaryuk, V. M.;
- Zhilyaev, Yu. V.;
- Ivanov, A. M.;
- Strokan, N. B.;
- Fedorov, L. M.
Publication type:
Article
Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 3, p. 289
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Zhilyaev, Yu. V.;
- Zhigunov, V. S.;
- Konakova, R. V.;
- Panteleev, V. N.;
- Sachenko, A. V.;
- Sheremet, V. N.
Publication type:
Article
Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 351
By:
- Sachenko, A. V.;
- Belyaev, A. E.;
- Boltovets, N. S.;
- Zhilyaev, Yu. V.;
- Kapitanchuk, L. M.;
- Klad'ko, V. P.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Kuchuk, A. V.;
- Naumov, A. V.;
- Panteleev, V. V.;
- Sheremet, V. N.
Publication type:
Article
Nanorelief of a GaN Surface: the Effect of Sulfide Treatment.
Published in:
Semiconductors, 2000, v. 34, n. 11, p. 1301, doi. 10.1134/1.1325427
By:
- Bessolov, V. N.;
- Zhilyaev, Yu. V.;
- Zavarin, E. E.;
- Kompan, M. E.;
- Konenkova, E. V.;
- Usikov, A. S.;
- Fedirko, V. A.
Publication type:
Article
The Dislocation Origin and Model of Excess Tunnel Current in GaP p–n Structures.
Published in:
Semiconductors, 2000, v. 34, n. 11, p. 1305, doi. 10.1134/1.1325428
By:
- Evstropov, V. V.;
- Dzhumaeva, M.;
- Zhilyaev, Yu. V.;
- Nazarov, N.;
- Sitnikova, A. A.;
- Fedorov, L. M.
Publication type:
Article
Study of the polarization photoluminescence of thick epitaxial GaN layers.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 716, doi. 10.1134/1.1187767
By:
- Zhilyaev, Yu. V.;
- Krivolapchuk, V. V.;
- Safronov, I. N.
Publication type:
Article
Sulfide passivation of GaAs power diodes.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 662, doi. 10.1134/1.1187751
By:
- Botnaryuk, V. M.;
- Zhilyaev, Yu. V.;
- Konenkova, E. V.
Publication type:
Article
Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures.
Published in:
Semiconductors, 1999, v. 33, n. 4, p. 412, doi. 10.1134/1.1187705
By:
- Botnaryuk, V. M.;
- Zhilyaev, Yu. V.;
- Rud’, Yu. V.;
- Rud’, V. Yu.
Publication type:
Article
Polarization photosensitivity of GaN/Si heterojunctions.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 301, doi. 10.1134/1.1187683
By:
- Botnaruk, V. M.;
- Raevsky, S. D.;
- Belkov, V. V.;
- Zhilyaev, Yu. V.;
- Rud, Yu. V.;
- Fedorov, L. M.;
- Rud, V. Yu.
Publication type:
Article
Photoelectric properties of GaN/GaP heterostructures.
Published in:
Semiconductors, 1998, v. 32, n. 10, p. 1077, doi. 10.1134/1.1187571
By:
- Botnaryuk, V. M.;
- Raevskiı, S. D.;
- Bel’kov, V. V.;
- Zhilyaev, Yu. V.;
- Rud’, Yu. V.;
- Fedorov, L. M.;
- Rud’, V. Yu.
Publication type:
Article
Tunnel excess current in nondegenerate barrier (p–n and m–s) silicon-containing III–V structures.
Published in:
Semiconductors, 1997, v. 31, n. 2, p. 115, doi. 10.1134/1.1187092
By:
- Evstropov, V. V.;
- Zhilyaev, Yu. V.;
- Dzhumaeva, M.;
- Nazarov, N.
Publication type:
Article
Generating broadband random Gaussian signals.
Published in:
Technical Physics Letters, 2010, v. 36, n. 8, p. 733, doi. 10.1134/S106378501008016X
By:
- Zhilyaev, Yu. V.;
- Il'inskaya, N. D.;
- Inovenkov, A. N.;
- Karpov, A. A.;
- Kuznetsov, S. I.;
- Orlova, T. A.;
- Panteleev, V. N.;
- Panyutin, E. A.;
- Snytkina, S. A.;
- Titkova, O. V.;
- Fedorov, L. M.;
- Khvostikov, V. P.
Publication type:
Article
Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology.
Published in:
Technical Physics Letters, 2010, v. 36, n. 6, p. 496, doi. 10.1134/S1063785010060039
By:
- Bessolov, V. N.;
- Zhilyaev, Yu. V.;
- Konenkova, E. V.;
- Sorokin, L. M.;
- Feoktistov, N. A.;
- Sharofidinov, Sh.;
- Shcheglov, M. P.;
- Kukushkin, S. A.;
- Mets, L. I.;
- Osipov, A. V.
Publication type:
Article
High-temperature gallium phosphide dynistors.
Published in:
Technical Physics Letters, 2009, v. 35, n. 9, p. 808, doi. 10.1134/S1063785009090077
By:
- Zhilyaev, Yu. V.;
- Panyutin, E. A.;
- Fedorov, L. M.
Publication type:
Article
Binary acceptor doping of epitaxial gallium phosphide for high-temperature electronic devices.
Published in:
Technical Physics Letters, 2008, v. 34, n. 10, p. 898, doi. 10.1134/S106378500810026X
By:
- Zhilyaev, Yu. V.;
- Panyutin, E. A.;
- Fedorov, L. M.
Publication type:
Article
Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer.
Published in:
Technical Physics Letters, 2008, v. 34, n. 6, p. 479, doi. 10.1134/S1063785008060084
By:
- Aksyanov, I. G.;
- Bessolov, V. N.;
- Zhilyaev, Yu. V.;
- Kompan, M. E.;
- Konenkova, E. V.;
- Kukushkin, S. A.;
- Osipov, A. V.;
- Rodin, S. N.;
- Feoktistov, N. A.;
- Sharofidinov, Sh.;
- Shcheglov, M. P.
Publication type:
Article
Determination of the free carrier concentration in ultra-pure GaAs epilayers by a photoreflectance technique.
Published in:
Technical Physics Letters, 2008, v. 34, n. 1, p. 37, doi. 10.1134/S1063785008010112
By:
- Komkov, O. S.;
- Pikhtin, A. N.;
- Zhilyaev, Yu. V.;
- Fedorov, L. M.
Publication type:
Article
Chloride vapor-phase epitaxy of gallium nitride on silicon: Structural and luminescent characteristics of epilayers.
Published in:
Technical Physics Letters, 2006, v. 32, n. 8, p. 674, doi. 10.1134/S1063785006080116
By:
- Bessolov, V. N.;
- Botnaryuk, V. M.;
- Zhilyaev, Yu. V.;
- Konenkova, E. V.;
- Poletaev, N. K.;
- Raevskiĭ, S. D.;
- Rodin, S. N.;
- Smirnov, S. L.;
- Sharofidinov, Sh.;
- Shcheglov, M. P.;
- Hee Seok Park;
- Koike, Masayoshi
Publication type:
Article
GaN Films Grown by Vapor-Phase Epitaxy in a Hydride–Chloride System on Si(111) Substrates with AlN Buffer Sublayers.
Published in:
Technical Physics Letters, 2005, v. 31, n. 11, p. 915, doi. 10.1134/1.2136951
By:
- Bessolov, V. N.;
- Davydov, V. Yu.;
- Zhilyaev, Yu. V.;
- Konenkova, E. V.;
- Mosina, G. N.;
- Raevskiǐ, S. D.;
- Rodin, S. N.;
- Sharofidinov, Sh.;
- Shcheglov, M. P.;
- Park, Hee Seok;
- Koike, Masayoshi
Publication type:
Article
Bulk GaN Layers Grown on Oxidized Silicon by Vapor-Phase Epitaxy in a Hydride–Chloride System.
Published in:
Technical Physics Letters, 2005, v. 31, n. 5, p. 367, doi. 10.1134/1.1931770
By:
- Zhilyaev, Yu. V.;
- Raevskii, S. D.;
- Grabko, D. Z.;
- Leu, D. S.;
- Kompan, M. E.;
- Yusupova, Sh. A.;
- Shcheglov, M. P.
Publication type:
Article
Correlation between the Electrical and Luminescent Properties of High-Purity Gallium Arsenide.
Published in:
Technical Physics Letters, 2004, v. 30, n. 10, p. 810, doi. 10.1134/1.1813717
By:
- Botnaryuk, M. V.;
- Zhilyaev, Yu. V.;
- Orlova, T. A.;
- Poletaev, N. K.;
- Fedorov, L. M.;
- Yusupova, Sh. A.
Publication type:
Article
Application of the Holographic Interferometer for Modeling of Processes in a Vapor Phase Epitaxy Reactor.
Published in:
Technical Physics Letters, 2003, v. 29, n. 6, p. 521, doi. 10.1134/1.1589578
By:
- Konstantinov, V. B.;
- Babenko, V. A.;
- Zhilyaev, Yu. V.
Publication type:
Article
Bulk Large-Area GaN Layers.
Published in:
Technical Physics Letters, 2003, v. 29, n. 5, p. 400, doi. 10.1134/1.1579807
By:
- Zhilyaev, Yu. V.;
- Nasonov, A. V.;
- Raevskiı, S. D.;
- Rodin, S. N.;
- Shcheglov, M. P.;
- Yusupova, Sh. A.;
- Davydov, V. Yu.
Publication type:
Article
High-Temperature Annealing of Bulk GaN Layers.
Published in:
Technical Physics Letters, 2002, v. 28, n. 12, p. 994, doi. 10.1134/1.1535513
By:
- Bessolov, V. N.;
- Zhilyaev, Yu. V.;
- Kompan, M. E.;
- Konenkova, E. V.;
- Kukushkin, S. A.;
- Mesh, M. V.;
- Raevskiı, S. D.;
- Fradkov, A. L.;
- Fedirko, V. A.
Publication type:
Article
Initial Stages of the GaN Growth on Oxidized Silicon.
Published in:
Technical Physics Letters, 2001, v. 27, n. 12, p. 1010, doi. 10.1134/1.1432331
By:
- Bessolov, V. N.;
- Zhilyaev, Yu. V.;
- Konenkova, E. V.;
- Kukushkin, S. A.;
- Luk’yanov, A. V.;
- Raevskiı, S. D.;
- Fedirko, V. A.
Publication type:
Article