Works matching AU Zhilyaev, Yu. V.

Results: 28

Sulfide passivation of III–V semiconductor surfaces: role of the sulfur ionic charge and of the reaction potential of the solution.

Published in:

Technical Physics, 1998, v. 43, n. 8, p. 983, doi. 10.1134/1.1259113

By:

Bessolov, V. N.;
Zhilyaev, Yu. V.;
Konenkova, E. V.;
Lebedev, M. V.

Publication type:

Article

Generating broadband random Gaussian signals.

Published in:

Technical Physics Letters, 2010, v. 36, n. 8, p. 733, doi. 10.1134/S106378501008016X

By:

Zhilyaev, Yu. V.;
Il'inskaya, N. D.;
Inovenkov, A. N.;
Karpov, A. A.;
Kuznetsov, S. I.;
Orlova, T. A.;
Panteleev, V. N.;
Panyutin, E. A.;
Snytkina, S. A.;
Titkova, O. V.;
Fedorov, L. M.;
Khvostikov, V. P.

Publication type:

Article

Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology.

Published in:

Technical Physics Letters, 2010, v. 36, n. 6, p. 496, doi. 10.1134/S1063785010060039

By:

Bessolov, V. N.;
Zhilyaev, Yu. V.;
Konenkova, E. V.;
Sorokin, L. M.;
Feoktistov, N. A.;
Sharofidinov, Sh.;
Shcheglov, M. P.;
Kukushkin, S. A.;
Mets, L. I.;
Osipov, A. V.

Publication type:

Article

High-temperature gallium phosphide dynistors.

Published in:

Technical Physics Letters, 2009, v. 35, n. 9, p. 808, doi. 10.1134/S1063785009090077

By:

Zhilyaev, Yu. V.;
Panyutin, E. A.;
Fedorov, L. M.

Publication type:

Article

Binary acceptor doping of epitaxial gallium phosphide for high-temperature electronic devices.

Published in:

Technical Physics Letters, 2008, v. 34, n. 10, p. 898, doi. 10.1134/S106378500810026X

By:

Zhilyaev, Yu. V.;
Panyutin, E. A.;
Fedorov, L. M.

Publication type:

Article

Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer.

Published in:

Technical Physics Letters, 2008, v. 34, n. 6, p. 479, doi. 10.1134/S1063785008060084

By:

Aksyanov, I. G.;
Bessolov, V. N.;
Zhilyaev, Yu. V.;
Kompan, M. E.;
Konenkova, E. V.;
Kukushkin, S. A.;
Osipov, A. V.;
Rodin, S. N.;
Feoktistov, N. A.;
Sharofidinov, Sh.;
Shcheglov, M. P.

Publication type:

Article

Determination of the free carrier concentration in ultra-pure GaAs epilayers by a photoreflectance technique.

Published in:

Technical Physics Letters, 2008, v. 34, n. 1, p. 37, doi. 10.1134/S1063785008010112

By:

Komkov, O. S.;
Pikhtin, A. N.;
Zhilyaev, Yu. V.;
Fedorov, L. M.

Publication type:

Article

Chloride vapor-phase epitaxy of gallium nitride on silicon: Structural and luminescent characteristics of epilayers.

Published in:

Technical Physics Letters, 2006, v. 32, n. 8, p. 674, doi. 10.1134/S1063785006080116

By:

Bessolov, V. N.;
Botnaryuk, V. M.;
Zhilyaev, Yu. V.;
Konenkova, E. V.;
Poletaev, N. K.;
Raevskiĭ, S. D.;
Rodin, S. N.;
Smirnov, S. L.;
Sharofidinov, Sh.;
Shcheglov, M. P.;
Hee Seok Park;
Koike, Masayoshi

Publication type:

Article

GaN Films Grown by Vapor-Phase Epitaxy in a Hydride–Chloride System on Si(111) Substrates with AlN Buffer Sublayers.

Published in:

Technical Physics Letters, 2005, v. 31, n. 11, p. 915, doi. 10.1134/1.2136951

By:

Bessolov, V. N.;
Davydov, V. Yu.;
Zhilyaev, Yu. V.;
Konenkova, E. V.;
Mosina, G. N.;
Raevskiǐ, S. D.;
Rodin, S. N.;
Sharofidinov, Sh.;
Shcheglov, M. P.;
Park, Hee Seok;
Koike, Masayoshi

Publication type:

Article

Bulk GaN Layers Grown on Oxidized Silicon by Vapor-Phase Epitaxy in a Hydride–Chloride System.

Published in:

Technical Physics Letters, 2005, v. 31, n. 5, p. 367, doi. 10.1134/1.1931770

By:

Zhilyaev, Yu. V.;
Raevskii, S. D.;
Grabko, D. Z.;
Leu, D. S.;
Kompan, M. E.;
Yusupova, Sh. A.;
Shcheglov, M. P.

Publication type:

Article

Correlation between the Electrical and Luminescent Properties of High-Purity Gallium Arsenide.

Published in:

Technical Physics Letters, 2004, v. 30, n. 10, p. 810, doi. 10.1134/1.1813717

By:

Botnaryuk, M. V.;
Zhilyaev, Yu. V.;
Orlova, T. A.;
Poletaev, N. K.;
Fedorov, L. M.;
Yusupova, Sh. A.

Publication type:

Article

Application of the Holographic Interferometer for Modeling of Processes in a Vapor Phase Epitaxy Reactor.

Published in:

Technical Physics Letters, 2003, v. 29, n. 6, p. 521, doi. 10.1134/1.1589578

By:

Konstantinov, V. B.;
Babenko, V. A.;
Zhilyaev, Yu. V.

Publication type:

Article

Bulk Large-Area GaN Layers.

Published in:

Technical Physics Letters, 2003, v. 29, n. 5, p. 400, doi. 10.1134/1.1579807

By:

Zhilyaev, Yu. V.;
Nasonov, A. V.;
Raevskiı, S. D.;
Rodin, S. N.;
Shcheglov, M. P.;
Yusupova, Sh. A.;
Davydov, V. Yu.

Publication type:

Article

High-Temperature Annealing of Bulk GaN Layers.

Published in:

Technical Physics Letters, 2002, v. 28, n. 12, p. 994, doi. 10.1134/1.1535513

By:

Bessolov, V. N.;
Zhilyaev, Yu. V.;
Kompan, M. E.;
Konenkova, E. V.;
Kukushkin, S. A.;
Mesh, M. V.;
Raevskiı, S. D.;
Fradkov, A. L.;
Fedirko, V. A.

Publication type:

Article

Initial Stages of the GaN Growth on Oxidized Silicon.

Published in:

Technical Physics Letters, 2001, v. 27, n. 12, p. 1010, doi. 10.1134/1.1432331

By:

Bessolov, V. N.;
Zhilyaev, Yu. V.;
Konenkova, E. V.;
Kukushkin, S. A.;
Luk’yanov, A. V.;
Raevskiı, S. D.;
Fedirko, V. A.

Publication type:

Article

Photoluminescence of n-GaN: influence of chemical treatment of the surface using sulfide solutions.

Published in:

Technical Physics Letters, 1998, v. 24, n. 12, p. 986, doi. 10.1134/1.1262343

By:

Zhilyaev, Yu. V.;
Kompan, M. E.;
Konenkova, E. V.;
Mokeev, A. S.;
Raevskiı, S. D.

Publication type:

Article

Behavior of epitaxial GaAs layers as α particle detectors.

Published in:

Technical Physics Letters, 1998, v. 24, n. 4, p. 250, doi. 10.1134/1.1262073

By:

Botnaryuk, V. M.;
Zhilyaev, Yu. V.;
Ivanov, A. M.;
Strokan, N. B.;
Fedorov, L. M.

Publication type:

Article

Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density.

Published in:

Semiconductors, 2013, v. 47, n. 9, p. 1180, doi. 10.1134/S1063782613090212

By:

Sachenko, A. V.;
Belyaev, A. E.;
Boltovets, N. S.;
Zhilyaev, Yu. V.;
Kapitanchuk, L. M.;
Klad’ko, V. P.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Naumov, A. V.;
Panteleev, V. N.;
Sheremet, V. N.

Publication type:

Article

Nanorelief of a GaN Surface: the Effect of Sulfide Treatment.

Published in:

Semiconductors, 2000, v. 34, n. 11, p. 1301, doi. 10.1134/1.1325427

By:

Bessolov, V. N.;
Zhilyaev, Yu. V.;
Zavarin, E. E.;
Kompan, M. E.;
Konenkova, E. V.;
Usikov, A. S.;
Fedirko, V. A.

Publication type:

Article

The Dislocation Origin and Model of Excess Tunnel Current in GaP p–n Structures.

Published in:

Semiconductors, 2000, v. 34, n. 11, p. 1305, doi. 10.1134/1.1325428

By:

Evstropov, V. V.;
Dzhumaeva, M.;
Zhilyaev, Yu. V.;
Nazarov, N.;
Sitnikova, A. A.;
Fedorov, L. M.

Publication type:

Article

Study of the polarization photoluminescence of thick epitaxial GaN layers.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 716, doi. 10.1134/1.1187767

By:

Zhilyaev, Yu. V.;
Krivolapchuk, V. V.;
Safronov, I. N.

Publication type:

Article

Sulfide passivation of GaAs power diodes.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 662, doi. 10.1134/1.1187751

By:

Botnaryuk, V. M.;
Zhilyaev, Yu. V.;
Konenkova, E. V.

Publication type:

Article

Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures.

Published in:

Semiconductors, 1999, v. 33, n. 4, p. 412, doi. 10.1134/1.1187705

By:

Botnaryuk, V. M.;
Zhilyaev, Yu. V.;
Rud’, Yu. V.;
Rud’, V. Yu.

Publication type:

Article

Polarization photosensitivity of GaN/Si heterojunctions.

Published in:

Semiconductors, 1999, v. 33, n. 3, p. 301, doi. 10.1134/1.1187683

By:

Botnaruk, V. M.;
Raevsky, S. D.;
Belkov, V. V.;
Zhilyaev, Yu. V.;
Rud, Yu. V.;
Fedorov, L. M.;
Rud, V. Yu.

Publication type:

Article

Photoelectric properties of GaN/GaP heterostructures.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1077, doi. 10.1134/1.1187571

By:

Botnaryuk, V. M.;
Raevskiı, S. D.;
Bel’kov, V. V.;
Zhilyaev, Yu. V.;
Rud’, Yu. V.;
Fedorov, L. M.;
Rud’, V. Yu.

Publication type:

Article

Tunnel excess current in nondegenerate barrier (p–n and m–s) silicon-containing III–V structures.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 115, doi. 10.1134/1.1187092

By:

Evstropov, V. V.;
Zhilyaev, Yu. V.;
Dzhumaeva, M.;
Nazarov, N.

Publication type:

Article

Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 3, p. 289

By:

Belyaev, A. E.;
Boltovets, N. S.;
Zhilyaev, Yu. V.;
Zhigunov, V. S.;
Konakova, R. V.;
Panteleev, V. N.;
Sachenko, A. V.;
Sheremet, V. N.

Publication type:

Article

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 351

By:

Sachenko, A. V.;
Belyaev, A. E.;
Boltovets, N. S.;
Zhilyaev, Yu. V.;
Kapitanchuk, L. M.;
Klad'ko, V. P.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Kuchuk, A. V.;
Naumov, A. V.;
Panteleev, V. V.;
Sheremet, V. N.

Publication type:

Article