Works by Zhang, Baoshun

Results: 68

Plasma Treatment Technologies for GaN Electronics.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 22, p. 4343, doi. 10.3390/electronics13224343

By:

Li, Botong;
Rahaman, Imteaz;
Ellis, Hunter D.;
Fu, Houqiang;
Zhao, Yuji;
Cai, Yong;
Zhang, Baoshun;
Fu, Kai

Publication type:

Article

The Effect of Diluted N 2 O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 3, p. 596, doi. 10.3390/electronics13030596

By:

Dong, Zhihua;
Jiang, Leifeng;
Su, Manqi;
Zeng, Chunhong;
Liu, Hui;
Li, Botong;
Sun, Yuhua;
Cui, Qi;
Zeng, Zhongming;
Zhang, Baoshun

Publication type:

Article

p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 6, p. 1424, doi. 10.3390/electronics12061424

By:

Ding, Xiaoyu;
Yuan, Xu;
Ju, Tao;
Yu, Guohao;
Zhang, Bingliang;
Du, Zhongkai;
Zeng, Zhongming;
Zhang, Baoshun;
Zhang, Xinping

Publication type:

Article

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiN x /SiON as Composite Gate Dielectric.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 6, p. 895, doi. 10.3390/electronics11060895

By:

Zhang, Xiaodong;
Wei, Xing;
Zhang, Peipei;
Zhang, Hui;
Zhang, Li;
Deng, Xuguang;
Fan, Yaming;
Yu, Guohao;
Dong, Zhihua;
Fu, Houqiang;
Cai, Yong;
Fu, Kai;
Zhang, Baoshun

Publication type:

Article

Analysis and Manufacturing of GaN Trench‐Gate MOSFETs with Thick Bottom Dielectric.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 8, p. 1, doi. 10.1002/pssa.202400804

By:

Hao, Chunfeng;
Zhou, Jiaan;
Yu, Guohao;
Ding, Liying;
Li, Yu;
Guo, Bohan;
Yang, An;
Xing, Runxian;
Liu, Bosen;
Yue, Huixin;
Jiang, Jinxia;
Huang, Rong;
Zeng, Zhongming;
Zhang, Baoshun

Publication type:

Article

Impact of Protective Layer Structures on High‐Temperature Annealing of GaN.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 24, p. 1, doi. 10.1002/pssa.202200505

By:

Wang, Zheming;
Deng, Xuguang;
Fu, Houqiang;
Zhang, Li;
Yu, Guohao;
Xu, Kun;
Yang, Feng;
Fan, Yaming;
Zhang, Baoshun

Publication type:

Article

Phase‐Regulated Active Hydrogen Behavior on Molybdenum Disulfide for Electrochemical Nitrate‐to‐Ammonia Conversion.

Published in:

Angewandte Chemie, 2024, v. 136, n. 4, p. 1, doi. 10.1002/ange.202315109

By:

Wang, Yuting;
Xu, Yue;
Cheng, Chuanqi;
Zhang, Baoshun;
Zhang, Bin;
Yu, Yifu

Publication type:

Article

Scalable Electrosynthesis of Formamide through C−N Coupling at the Industrially Relevant Current Density of 120 mA cm−2.

Published in:

Angewandte Chemie, 2022, v. 134, n. 44, p. 1, doi. 10.1002/ange.202213009

By:

Shao, Jiang;
Meng, Nannan;
Wang, Yuting;
Zhang, Baoshun;
Yang, Kaiwen;
Liu, Cuibo;
Yu, Yifu;
Zhang, Bin

Publication type:

Article

Influence of Pulsed DC Sputtering Power on the Quality and Residual Stress of AlN Films on Si (100) Substrates.

Published in:

Crystal Research & Technology, 2022, v. 57, n. 5, p. 1, doi. 10.1002/crat.202100184

By:

Yin, Haotian;
Han, Jun;
Xing, Yanhui;
Deng, Xuguang;
Cheng, Wei;
Zhang, Yao;
Guan, Baolu;
Zhang, Baoshun

Publication type:

Article

Antioxidant and Antimicrobial Activities of Tannin Extracts from Castanea mollissima, Cyclobalanopsis glauca and Quercus aliena Based on Hydrochloric Acid Hydrolysis Extraction Method.

Published in:

Medicinal Plant, 2015, v. 6, n. 3/4, p. 21

By:

Yu LI;
Jian WANG;
Hong CHEN;
Yajun DU;
Xueting ZHOU;
Baoshun ZHANG;
Lujiang YUAN

Publication type:

Article

Ultrahigh Responsivity In 2 O 3 UVA Photodetector through Modulation of Trimethylindium Flow Rate.

Published in:

Crystals (2073-4352), 2024, v. 14, n. 6, p. 494, doi. 10.3390/cryst14060494

By:

Li, Yifei;
Chen, Tiwei;
Ma, Yongjian;
Hu, Yu;
Zhang, Li;
Zhang, Xiaodong;
Yang, Jinghang;
Wang, Lu;
Zhang, Huanyu;
Yan, Changling;
Zeng, Zhongming;
Zhang, Baoshun

Publication type:

Article

High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology.

Published in:

Crystals (2073-4352), 2024, v. 14, n. 3, p. 253, doi. 10.3390/cryst14030253

By:

Guo, Bohan;
Yu, Guohao;
Zhang, Li;
Zhou, Jiaan;
Wang, Zheming;
Xing, Runxian;
Yang, An;
Li, Yu;
Liu, Bosen;
Zeng, Xiaohong;
Du, Zhongkai;
Deng, Xuguang;
Zeng, Zhongming;
Zhang, Baoshun

Publication type:

Article

Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN Hybrid Anode Diode with Wide Operation Temperature from 73 K to 573 K.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 4, p. 620, doi. 10.3390/cryst13040620

By:

Yang, An;
Wei, Xing;
Shen, Wenchao;
Hu, Yu;
Chen, Tiwei;
Wang, Heng;
Zhou, Jiaan;
Xing, Runxian;
Zhang, Xiaodong;
Yu, Guohao;
Fan, Yaming;
Cai, Yong;
Zeng, Zhongming;
Zhang, Baoshun

Publication type:

Article

Effect of Growth Temperature on Crystallization of Ge 1−x Sn x Films by Magnetron Sputtering.

Published in:

Crystals (2073-4352), 2022, v. 12, n. 12, p. 1810, doi. 10.3390/cryst12121810

By:

Huang, Hongjuan;
Zhao, Desheng;
Qi, Chengjian;
Huang, Jingfa;
Zeng, Zhongming;
Zhang, Baoshun;
Lu, Shulong

Publication type:

Article

Four active monomers from Moutan Cortex exert inhibitory effects against oxidative stress by activating Nrf2/Keap1 signaling pathway.

Published in:

Korean Journal of Physiology & Pharmacology, 2020, v. 24, n. 5, p. 373, doi. 10.4196/kjpp.2020.24.5.373

By:

Baoshun Zhang;
Deqing Yu;
Nanxuan Luo;
Changqing Yang;
Yurong Zhu

Publication type:

Article

Ultrahigh Photoresponsive Photodetector Based on Graphene/SnS2 van der Waals Heterostructure.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 21, p. 1, doi. 10.1002/pssa.202100228

By:

Cui, Boyao;
Han, Jun;
Xing, Yanhui;
Lv, Weiming;
Lei, Ting;
Ma, Haixin;
Zeng, Zhongming;
Zhang, Baoshun

Publication type:

Article

Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 8, p. 1, doi. 10.1002/pssa.202000666

By:

Sun, Chi;
Ding, Xiaoyu;
Wei, Xing;
Tang, Wenxin;
Zhang, Xiaodong;
Zhao, Desheng;
Li, Shuping;
Yu, Guohao;
Song, Liang;
Cai, Yong;
Zeng, Zhongming;
Zhang, Baoshun

Publication type:

Article

Metalorganic Chemical Vapor Deposition Heteroepitaxial β‐Ga2O3 and Black Phosphorus Pn Heterojunction for Solar‐Blind Ultraviolet and Infrared Dual‐Band Photodetector.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 2, p. N.PAG, doi. 10.1002/pssa.201900861

By:

He, Tao;
Li, Chang;
Zhang, Xiaodong;
Ma, Yongjian;
Cao, Xu;
Shi, Xinyao;
Sun, Chi;
Li, Junshuai;
Song, Liang;
Zeng, Chunhong;
Zhang, Kai;
Zhang, Xinping;
Zhang, Baoshun

Publication type:

Article

Improved Threshold Voltage Stability and Gate Reliability in p‐GaN Gate High‐Electron‐Mobility Transistors with Hydrogen Plasma Treatment on the Sidewalls.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400367

By:

Zhang, Yuxiang;
Dong, Zhihua;
Yu, Guohao;
Sun, Yingfei;
Li, Yu;
Lu, Shaoqian;
Yue, Huixin;
Jiang, Leifeng;
Zeng, Zongming;
Cai, Yong;
Zhang, Baoshun

Publication type:

Article

Performance Recovery of p‐GaN Etch‐Induced Degradation via Atomic Layer Deposition In Situ N2 Plasma and Postanneal‐Assisted Passivation.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 1, p. 1, doi. 10.1002/pssr.202400211

By:

Sun, Yingfei;
Yu, Guohao;
Li, Ang;
Lu, Shaoqian;
Li, Yu;
Zhang, Yuxiang;
Du, Zhongkai;
Zhang, Bingliang;
Huang, Zixuan;
Zhao, Desheng;
Zeng, Zhongming;
Zhang, Baoshun

Publication type:

Article

Annealing Process on Metal–Oxide–Semiconductor Channel Properties for Quasivertical GaN‐on‐Sapphire Trench Metal–Oxide–Semiconductor Field‐Effect Transistor.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400075

By:

Zhou, Jiaan;
Yang, An;
Yu, Guohao;
Xing, Runxian;
Guo, Bohan;
Hao, Chunfeng;
Li, Yu;
Liu, Bosen;
Yue, Huixin;
Jiang, Jinxia;
Zhang, Li;
Deng, Xuguang;
Zeng, Zhongming;
Zhang, Baoshun;
Zhang, Xinping

Publication type:

Article

p-GaN Selective Nitridation to Obtain a Normally Off p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 4, p. 1, doi. 10.1002/pssr.202300301

By:

Shaoqian Lu;
Guohao Yu;
Yingfei Sun;
Xu Yuan;
Zhongkai Du;
Bingliang Zhang;
Lu Wang;
Yu Li;
Dongdong Wu;
Zengli Huang;
Zhongming Zeng;
Xulei Qin;
Baoshun Zhang

Publication type:

Article

Yield analysis of large-area high-power single-chip GaN-based light-emitting diodes with network design.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 3, p. 260, doi. 10.1002/pssr.201308308

By:

Wang, Wei;
Cai, Yong;
Zhang, Yibin;
Huang, Hongjuan;
Huang, Wei;
Li, Haiou;
Zhang, Baoshun

Publication type:

Article

Combining Network Pharmacology and Transcriptomics to Investigate the Mechanisms of Yujiang Paidu Decoction in the Treatment of Chronic Rhinosinusitis with Nasal Polyps.

Published in:

Drug Design, Development & Therapy, 2024, v. 18, p. 3791, doi. 10.2147/DDDT.S461769

By:

Li, Yujie;
Yin, Yadong;
Xiong, Juan;
Zhang, Zhipeng;
Li, Linglong;
Zhang, Baoshun;
Zhang, Feng;
Mao, Dehong

Publication type:

Article

Antifungal activity and potential mechanism of magnoflorine against Trichophyton rubrum.

Published in:

Journal of Antibiotics, 2021, v. 74, n. 3, p. 206, doi. 10.1038/s41429-020-00380-4

By:

Luo, Nanxuan;
Jin, Liang;
Yang, Changqing;
Zhu, Yurong;
Ye, Xiaoli;
Li, Xuegang;
Zhang, Baoshun

Publication type:

Article

Investigation of temperature-dependent polarization properties in grating-gate AlGaN/GaN heterostructures by Drude conductivity at THz frequency.

Published in:

Optical Engineering, 2023, v. 62, n. 6, p. 65108, doi. 10.1117/1.OE.62.6.065108

By:

Xing, Runxian;
Wang, Heng;
Zhou, Jiaan;
Yang, An;
Li, Yu;
Yu, Guohao;
Zeng, Zhongming;
Zhang, Xinping;
Zhang, Baoshun

Publication type:

Article

The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors.

Published in:

Applied Physics A: Materials Science & Processing, 2021, v. 127, n. 6, p. 1, doi. 10.1007/s00339-021-04596-5

By:

Jiang, Guangyuan;
Liu, Yan;
Lin, Zhaojun;
Yu, Guohao;
Zhang, Baoshun;
Lv, Yuanjie;
Liu, Yang;
Zhou, Yan

Publication type:

Article

Nonlinear amplification of microwave signals in spin-torque oscillators.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-37916-9

By:

Zhu, Keqiang;
Carpentieri, Mario;
Zhang, Like;
Fang, Bin;
Cai, Jialin;
Verba, Roman;
Giordano, Anna;
Puliafito, Vito;
Zhang, Baoshun;
Finocchio, Giovanni;
Zeng, Zhongming

Publication type:

Article

Phase‐Regulated Active Hydrogen Behavior on Molybdenum Disulfide for Electrochemical Nitrate‐to‐Ammonia Conversion.

Published in:

Angewandte Chemie International Edition, 2024, v. 63, n. 4, p. 1, doi. 10.1002/anie.202315109

By:

Wang, Yuting;
Xu, Yue;
Cheng, Chuanqi;
Zhang, Baoshun;
Zhang, Bin;
Yu, Yifu

Publication type:

Article

Scalable Electrosynthesis of Formamide through C−N Coupling at the Industrially Relevant Current Density of 120 mA cm−2.

Published in:

Angewandte Chemie International Edition, 2022, v. 61, n. 44, p. 1, doi. 10.1002/anie.202213009

By:

Shao, Jiang;
Meng, Nannan;
Wang, Yuting;
Zhang, Baoshun;
Yang, Kaiwen;
Liu, Cuibo;
Yu, Yifu;
Zhang, Bin

Publication type:

Article

Ultra low RIN, low threshold AlGaInAs/InP BH-DFB laser.

Published in:

Journal of the European Optical Society, 2024, v. 20, n. 1, p. 1, doi. 10.1051/jeos/2024023

By:

Ren, Jianhua;
Xing, Yanhui;
Han, Jun;
Sun, Tianyu;
Xing, Zheng;
Yin, Can;
Zhang, Baoshun

Publication type:

Article

Bin-by-bin network calibration for delay time of FPGA-TDL-TDC.

Published in:

Journal of Electronic Measurement & Instrument, 2024, v. 38, n. 7, p. 89, doi. 10.13382/j.jemi.B2407180

By:

Xu Yue;
Xie Jie;
Zeng Zhongming;
Zhang Baoshun;
Wu Dongmin

Publication type:

Article

Flexural Vibration Magnetoelectric Antenna for Medium Frequency and High Frequency.

Published in:

Integrated Ferroelectrics, 2023, v. 231, n. 1, p. 57, doi. 10.1080/10584587.2022.2143200

By:

Liu, Yizhang;
Zeng, Zhongming;
Lin, Wenkui;
Yun, Xiaofan;
Wu, Dongmin;
Zha, Qiang;
Zhang, Baoshun

Publication type:

Article

High Power 980-nm Broad-Area Lasers with Distributed Bragg Reflection Grating.

Published in:

Integrated Ferroelectrics, 2021, v. 219, n. 1, p. 260, doi. 10.1080/10584587.2021.1911373

By:

Qiao, Chuang;
Fang, Dan;
Li;
Fang, Xuan;
Tang, Jilong;
Wang, Dengkui;
Zhang, Baoshun;
Wei, Zhipeng

Publication type:

Article

High Power 980-nm Broad-Area Lasers with Distributed Bragg Reflection Grating.

Published in:

Integrated Ferroelectrics, 2021, v. 219, n. 1, p. 260, doi. 10.1080/10584587.2021.1911373

By:

Qiao, Chuang;
Fang, Dan;
Li;
Fang, Xuan;
Tang, Jilong;
Wang, Dengkui;
Zhang, Baoshun;
Wei, Zhipeng

Publication type:

Article

Giant spin-torque diode sensitivity in the absence of bias magnetic field.

Published in:

Nature Communications, 2016, v. 7, n. 4, p. 11259, doi. 10.1038/ncomms11259

By:

Fang, Bin;
Carpentieri, Mario;
Hao, Xiaojie;
Jiang, Hongwen;
Katine, Jordan A.;
Krivorotov, Ilya N.;
Ocker, Berthold;
Langer, Juergen;
Wang, Kang L.;
Zhang, Baoshun;
Azzerboni, Bruno;
Amiri, Pedram Khalili;
Finocchio, Giovanni;
Zeng, Zhongming

Publication type:

Article

10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 13, p. 848, doi. 10.1049/el.2017.3981

By:

Ronghui Hao;
Dongdong Wu;
Kai Fu;
Liang Song;
Fu Chen;
Jie Zhao;
Zhongkai Du;
Bingliang Zhang;
Qilong Wang;
Guohao Yu;
Kai Cheng;
Yong Cai;
Xinping Zhang;
Baoshun Zhang

Publication type:

Article

10 A/567 V normally off p‐GaN gate HEMT with high‐threshold voltage and low‐gate leakage current.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 12, p. 848, doi. 10.1049/el.2017.3981

By:

Hao, Ronghui;
Wu, Dongdong;
Fu, Kai;
Song, Liang;
Chen, Fu;
Zhao, Jie;
Du, Zhongkai;
Zhang, Bingliang;
Wang, Qilong;
Yu, Guohao;
Cheng, Kai;
Cai, Yong;
Zhang, Xinping;
Zhang, Baoshun

Publication type:

Article

High-power single-chip GaN-based white LED with 3058 lm.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 25, p. 2050, doi. 10.1049/el.2016.2789

By:

Mingdi Ding;
Yibin Zhang;
Jianwei Xu;
Desheng Zhao;
Hongjuan Huang;
Xin Xu;
Zhenlin Miao;
Peng He;
Yanming Wang;
Yongjun Dong;
Baoshun Zhang;
Yong Cai

Publication type:

Article

High‐power single‐chip GaN‐based white LED with 3058 lm.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 25, p. 2050, doi. 10.1049/el.2016.2789

By:

Ding, Mingdi;
Zhang, Yibin;
Xu, Jianwei;
Zhao, Desheng;
Huang, Hongjuan;
Xu, Xin;
Miao, Zhenlin;
He, Peng;
Wang, Yanming;
Dong, Yongjun;
Zhang, Baoshun;
Cai, Yong

Publication type:

Article

Fabrication of 45 nm high In component metamorphic In0.7Ga0.3As/In0.6Ga0.4As composite-channel high electron-mobility transistors on GaAs substrates.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 4, p. 318, doi. 10.1049/el.2015.2126

By:

Weihua Kang;
Xiaodong Zhang;
Xian Ji;
Yong Cai;
Jiahui Zhou;
Wenjun Xu;
Qi Li;
Gongli Xiao;
Baoshun Zhang;
Haiou Li

Publication type:

Article

Fabrication of 45 nm high In component metamorphic In0.7Ga0.3As/In0.6Ga0.4As composite‐channel high electron‐mobility transistors on GaAs substrates.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 3, p. 318, doi. 10.1049/el.2015.2126

By:

Kang, Weihua;
Zhang, Xiaodong;
Ji, Xian;
Cai, Yong;
Zhou, Jiahui;
Xu, Wenjun;
Li, Qi;
Xiao, Gongli;
Zhang, Baoshun;
Li, Haiou

Publication type:

Article

16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 15, p. 1201, doi. 10.1049/el.2015.1018

By:

Zhili Zhang;
Guohao Yu;
Xiaodong Zhang;
Shuxin Tan;
Dongdong Wu;
Kai Fu;
Wei Huang;
Yong Cai;
Baoshun Zhang

Publication type:

Article

16.8 A/600 V AlGaN/GaN MIS‐HEMTs employing LPCVD‐Si3N4 as gate insulator.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 15, p. 1201, doi. 10.1049/el.2015.1018

By:

Zhang, Zhili;
Yu, Guohao;
Zhang, Xiaodong;
Tan, Shuxin;
Wu, Dongdong;
Fu, Kai;
Huang, Wei;
Cai, Yong;
Zhang, Baoshun

Publication type:

Article

Demonstration of wafer-level light emitting diode with very high output power.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 25, p. 1970

By:

Yibin Zhang;
Fei Xu;
Desheng Zhao;
Hongjuan Huang;
Wei Wang;
Jianwei Xu;
Yong Cai;
Guangyi Shi;
Guojun Lu;
Zhenlin Miao;
Yundong Qi;
Baoshun Zhang

Publication type:

Article

Demonstration of wafer‐level light emitting diode with very high output power.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 25, p. 1970, doi. 10.1049/el.2014.3657

By:

Zhang, Yibin;
Xu, Fei;
Zhao, Desheng;
Huang, Hongjuan;
Wang, Wei;
Xu, Jianwei;
Cai, Yong;
Shi, Guangyi;
Lu, Guojun;
Miao, Zhenlin;
Qi, Yundong;
Zhang, Baoshun

Publication type:

Article

12.5 A/350 V AlGaN/GaN-on-Si MOS-HEMT with low specific on-resistance and minimal threshold hysteresis.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 18, p. 1322, doi. 10.1049/el.2014.2020

By:

Shuang Liu;
Guohao Yu;
Kai Fu;
Shuxin Tan;
Zhili Zhang;
Chunhong Zeng;
Keyu Hou;
Wei Huang;
Yong Cai;
Baoshun Zhang;
Jinshe Yuan

Publication type:

Article

12.5 A/350 V AlGaN/GaN‐on‐Si MOS‐HEMT with low specific on‐resistance and minimal threshold hysteresis.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 17, p. 1322, doi. 10.1049/el.2014.2020

By:

Liu, Shuang;
Yu, Guohao;
Fu, Kai;
Tan, Shuxin;
Zhang, Zhili;
Zeng, Chunhong;
Hou, Keyu;
Huang, Wei;
Cai, Yong;
Zhang, Baoshun;
Yuan, Jinshe

Publication type:

Article

5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 3, p. 20, doi. 10.1049/el.2012.3153

By:

Zhihua Dong;
Shuxin Tan;
Yong Cai;
Hongwei Chen;
Shenghou Liu;
Jicheng Xu;
Lu Xue;
Guohao Yu;
Yue Wang;
Desheng Zhao;
Keyu Hou;
Chen, Kevin J.;
Baoshun Zhang

Publication type:

Article

5.3A/400V normally‐off AlGaN/GaN‐on‐Si MOS‐HEMT with high threshold voltage and large gate swing.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 1, p. 221, doi. 10.1049/el.2012.3153

By:

Dong, Zhihua;
Tan, Shuxin;
Cai, Yong;
Chen, Hongwei;
Liu, Shenghou;
Xu, Jicheng;
Xue, Lu;
Yu, Guohao;
Wang, Yue;
Zhao, Desheng;
Hou, Keyu;
Chen, Kevin J.;
Zhang, Baoshun

Publication type:

Article