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Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer.
- Published in:
- Semiconductor Technology, 2024, v. 45, n. 7, p. 1, doi. 10.1088/1674-4926/24010025
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- Article
Ultrahigh Responsivity In 2 O 3 UVA Photodetector through Modulation of Trimethylindium Flow Rate.
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- Crystals (2073-4352), 2024, v. 14, n. 6, p. 494, doi. 10.3390/cryst14060494
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- Article
Polarization Properties in GaN Double-Channel HEMTs at Mid-Infrared Frequencies.
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- Plasmonics, 2024, v. 19, n. 3, p. 1121, doi. 10.1007/s11468-023-02062-x
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- Article
Ultra low RIN, low threshold AlGaInAs/InP BH-DFB laser.
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- Journal of the European Optical Society, 2024, v. 20, n. 1, p. 1, doi. 10.1051/jeos/2024023
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- Article
p-GaN Selective Nitridation to Obtain a Normally Off p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors.
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- Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 4, p. 1, doi. 10.1002/pssr.202300301
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- Article
High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology.
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- Crystals (2073-4352), 2024, v. 14, n. 3, p. 253, doi. 10.3390/cryst14030253
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- Article
Multi-wavelength structured light based on metasurfaces for 3D imaging.
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- Nanophotonics (21928606), 2024, v. 13, n. 4, p. 477, doi. 10.1515/nanoph-2023-0885
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- Article
The Effect of Diluted N 2 O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor.
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- Electronics (2079-9292), 2024, v. 13, n. 3, p. 596, doi. 10.3390/electronics13030596
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- Article
Phase‐Regulated Active Hydrogen Behavior on Molybdenum Disulfide for Electrochemical Nitrate‐to‐Ammonia Conversion.
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- Angewandte Chemie, 2024, v. 136, n. 4, p. 1, doi. 10.1002/ange.202315109
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- Article
Phase‐Regulated Active Hydrogen Behavior on Molybdenum Disulfide for Electrochemical Nitrate‐to‐Ammonia Conversion.
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- Angewandte Chemie International Edition, 2024, v. 63, n. 4, p. 1, doi. 10.1002/anie.202315109
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- Article
High-Precision Ultra-Long Air Slit Fabrication Based on MEMS Technology for Imaging Spectrometers.
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- Micromachines, 2023, v. 14, n. 12, p. 2198, doi. 10.3390/mi14122198
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- Article
Investigation of temperature-dependent polarization properties in grating-gate AlGaN/GaN heterostructures by Drude conductivity at THz frequency.
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- Optical Engineering, 2023, v. 62, n. 6, p. 65108, doi. 10.1117/1.OE.62.6.065108
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- Article
Nonlinear amplification of microwave signals in spin-torque oscillators.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-37916-9
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- Article
Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN Hybrid Anode Diode with Wide Operation Temperature from 73 K to 573 K.
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- Crystals (2073-4352), 2023, v. 13, n. 4, p. 620, doi. 10.3390/cryst13040620
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- Article
p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT.
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- Electronics (2079-9292), 2023, v. 12, n. 6, p. 1424, doi. 10.3390/electronics12061424
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- Article
Effect of V–III Ratio‐Based Growth Mode on the Surface Morphology, Strain Relaxation, and Dislocation Density of AlN Films Grown by Metal‐Organic Chemical Vapor Deposition.
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- Physica Status Solidi (B), 2023, v. 260, n. 1, p. 1, doi. 10.1002/pssb.202200279
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- Article
Impact of Protective Layer Structures on High‐Temperature Annealing of GaN.
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 24, p. 1, doi. 10.1002/pssa.202200505
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- Article
Effect of Growth Temperature on Crystallization of Ge 1−x Sn x Films by Magnetron Sputtering.
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- Crystals (2073-4352), 2022, v. 12, n. 12, p. 1810, doi. 10.3390/cryst12121810
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- Article
Scalable Electrosynthesis of Formamide through C−N Coupling at the Industrially Relevant Current Density of 120 mA cm<sup>−2</sup>.
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- Angewandte Chemie, 2022, v. 134, n. 44, p. 1, doi. 10.1002/ange.202213009
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- Article
Scalable Electrosynthesis of Formamide through C−N Coupling at the Industrially Relevant Current Density of 120 mA cm<sup>−2</sup>.
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- Angewandte Chemie International Edition, 2022, v. 61, n. 44, p. 1, doi. 10.1002/anie.202213009
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- Article
Influence of Pulsed DC Sputtering Power on the Quality and Residual Stress of AlN Films on Si (100) Substrates.
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- Crystal Research & Technology, 2022, v. 57, n. 5, p. 1, doi. 10.1002/crat.202100184
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- Article
Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiN x /SiON as Composite Gate Dielectric.
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- Electronics (2079-9292), 2022, v. 11, n. 6, p. 895, doi. 10.3390/electronics11060895
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- Article
Ultrasensitive and Broad‐Spectrum Photodetectors Based on InSe/ReS<sub>2</sub> Heterostructure.
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- Advanced Optical Materials, 2022, v. 10, n. 5, p. 1, doi. 10.1002/adom.202101772
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- Article
Ultrahigh Photoresponsive Photodetector Based on Graphene/SnS<sub>2</sub> van der Waals Heterostructure.
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- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 21, p. 1, doi. 10.1002/pssa.202100228
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- Article
The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors.
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- Applied Physics A: Materials Science & Processing, 2021, v. 127, n. 6, p. 1, doi. 10.1007/s00339-021-04596-5
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- Article
Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method.
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- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 8, p. 1, doi. 10.1002/pssa.202000666
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- Article
Antifungal activity and potential mechanism of magnoflorine against Trichophyton rubrum.
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- Journal of Antibiotics, 2021, v. 74, n. 3, p. 206, doi. 10.1038/s41429-020-00380-4
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- Article
Multistate Logic Inverter Based on Black Phosphorus/SnSeS Heterostructure.
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- Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000879
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- Article
Four active monomers from Moutan Cortex exert inhibitory effects against oxidative stress by activating Nrf2/Keap1 signaling pathway.
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- Korean Journal of Physiology & Pharmacology, 2020, v. 24, n. 5, p. 373, doi. 10.4196/kjpp.2020.24.5.373
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- Article
Influence of nitrogen flow ratio on the optical property of AlN deposited by DC magnetron sputtering on Si (100) substrate.
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- Micro & Nano Letters (Wiley-Blackwell), 2020, v. 15, n. 8, p. 556, doi. 10.1049/mnl.2019.0767
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- Article
Metalorganic Chemical Vapor Deposition Heteroepitaxial β‐Ga<sub>2</sub>O<sub>3</sub> and Black Phosphorus Pn Heterojunction for Solar‐Blind Ultraviolet and Infrared Dual‐Band Photodetector.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 2, p. N.PAG, doi. 10.1002/pssa.201900861
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- Article
Broadband Ultraviolet Photodetector Based on Vertical Ga<sub>2</sub>O<sub>3</sub>/GaN Nanowire Array with High Responsivity.
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- Advanced Optical Materials, 2019, v. 7, n. 7, p. N.PAG, doi. 10.1002/adom.201801563
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- Article
Influence of pressure on the properties of AlN deposited by DC reactive magnetron sputtering on Si (100) substrate.
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- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 2, p. 146, doi. 10.1049/mnl.2018.5293
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- Article
Multistate Logic Inverter Based on Black Phosphorus/SnSeS Heterostructure.
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- Advanced Electronic Materials, 2019, v. 5, n. 1, p. N.PAG, doi. 10.1002/aelm.201800416
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- Article
Solar-blind ultraviolet photodetector based on graphene/vertical Ga<sub>2</sub>O<sub>3</sub> nanowire array heterojunction.
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- Nanophotonics (21928606), 2018, v. 7, n. 9, p. 1557, doi. 10.1515/nanoph-2018-0061
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- Article
10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 13, p. 848, doi. 10.1049/el.2017.3981
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- Article
10 A/567 V normally off p‐GaN gate HEMT with high‐threshold voltage and low‐gate leakage current.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 12, p. 848, doi. 10.1049/el.2017.3981
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- Article
Enhanced Stability of Black Phosphorus Field‐Effect Transistors via Hydrogen Treatment.
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- Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700455
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- Article
High-power single-chip GaN-based white LED with 3058 lm.
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- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 25, p. 2050, doi. 10.1049/el.2016.2789
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- Article
High‐power single‐chip GaN‐based white LED with 3058 lm.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 25, p. 2050, doi. 10.1049/el.2016.2789
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- Article
Te-Doped Black Phosphorus Field-Effect Transistors.
- Published in:
- Advanced Materials, 2016, v. 28, n. 42, p. 9408, doi. 10.1002/adma.201603723
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- Article
Giant spin-torque diode sensitivity in the absence of bias magnetic field.
- Published in:
- Nature Communications, 2016, v. 7, n. 4, p. 11259, doi. 10.1038/ncomms11259
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- Article
Fabrication of 45 nm high In component metamorphic In<sub>0.7</sub>Ga<sub>0.3</sub>As/In<sub>0.6</sub>Ga<sub>0.4</sub>As composite-channel high electron-mobility transistors on GaAs substrates.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 4, p. 318, doi. 10.1049/el.2015.2126
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- Article
Fabrication of 45 nm high In component metamorphic In<sub>0.7</sub>Ga<sub>0.3</sub>As/In<sub>0.6</sub>Ga<sub>0.4</sub>As composite‐channel high electron‐mobility transistors on GaAs substrates.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 3, p. 318, doi. 10.1049/el.2015.2126
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- Article
Fabrication of Spin-Transfer Nano-Oscillator by Colloidal Lithography.
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- Journal of Nanomaterials, 2015, p. 1, doi. 10.1155/2015/973957
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- Article
16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si<sub>3</sub>N<sub>4</sub> as gate insulator.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 15, p. 1201, doi. 10.1049/el.2015.1018
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- Article
16.8 A/600 V AlGaN/GaN MIS‐HEMTs employing LPCVD‐Si<sub>3</sub>N<sub>4</sub> as gate insulator.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 15, p. 1201, doi. 10.1049/el.2015.1018
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- Article
Antioxidant and Antimicrobial Activities of Tannin Extracts from Castanea mollissima, Cyclobalanopsis glauca and Quercus aliena Based on Hydrochloric Acid Hydrolysis Extraction Method.
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- Medicinal Plant, 2015, v. 6, n. 3/4, p. 21
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- Article
Demonstration of wafer-level light emitting diode with very high output power.
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- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 25, p. 1970
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- Article
Demonstration of wafer‐level light emitting diode with very high output power.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 25, p. 1970, doi. 10.1049/el.2014.3657
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- Article