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DX behaviour of Si donors in AlGaN alloys.
- Published in:
- Physica Status Solidi (B), 2003, v. 235, n. 1, p. 13, doi. 10.1002/pssb.200301521
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- Article
Influence of the Growth Substrate on the Internal Quantum Efficiency of AlGaN/AlN Multiple Quantum Wells Governed by Carrier Localization.
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- Physica Status Solidi (B), 2021, v. 258, n. 4, p. 1, doi. 10.1002/pssb.202000464
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- Article
Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition.
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- Physica Status Solidi (B), 2020, v. 257, n. 12, p. 1, doi. 10.1002/pssb.202000278
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- Article
Carrier Dynamics in Al‐Rich AlGaN/AlN Quantum Well Structures Governed by Carrier Localization.
- Published in:
- Physica Status Solidi (B), 2020, v. 257, n. 12, p. 1, doi. 10.1002/pssb.202000242
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- Article