Ion implantation of porous gallium phosphide.Published in:Semiconductors, 1998, v. 32, n. 8, p. 886, doi. 10.1134/1.1187478By:Ushakov, V. V.;Dravin, V. A.;Mel’nik, N. N.;Zavaritskaya, T. V.;Loıko, N. N.;Karavanskiı, V. A.;Konstantinova, E. A.;Timoshenko, V. Yu.Publication type:Article