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AlGaN HEMT Structures Grown on Miscut Si(111) Wafers.
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- Materials (1996-1944), 2023, v. 16, n. 12, p. 4265, doi. 10.3390/ma16124265
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Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer.
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- Materials (1996-1944), 2022, v. 15, n. 24, p. 8945, doi. 10.3390/ma15248945
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Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells.
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- Semiconductors, 2021, v. 55, n. 1, p. S49, doi. 10.1134/S1063782621090074
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The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE.
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- Technical Physics Letters, 2020, v. 46, n. 12, p. 1211, doi. 10.1134/S1063785020120263
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Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells.
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- Semiconductors, 2019, v. 53, n. 14, p. 1900, doi. 10.1134/S1063782619140033
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Insulating GaN Epilayers Co-Doped with Iron and Carbon.
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- Technical Physics Letters, 2019, v. 45, n. 7, p. 723, doi. 10.1134/S106378501907023X
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Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs.
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- Semiconductors, 2018, v. 52, n. 14, p. 1843, doi. 10.1134/S1063782618140257
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The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas.
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- Technical Physics Letters, 2018, v. 44, n. 7, p. 577, doi. 10.1134/S1063785018070106
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Theoretical and experimental studies of the current-voltage and capacitance-voltage of HEMT structures and field-effect transistors.
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- Semiconductors, 2016, v. 50, n. 12, p. 1574, doi. 10.1134/S1063782616120216
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Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells.
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- Semiconductors, 2016, v. 50, n. 11, p. 1431, doi. 10.1134/S1063782616110051
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Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel.
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- Technical Physics Letters, 2016, v. 42, n. 11, p. 1079, doi. 10.1134/S1063785016110031
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Stress-dislocation management in MOVPE of GaN on SiC wafers.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 10, p. 2759, doi. 10.1002/pssa.201600210
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effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis.
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- Semiconductors, 2016, v. 50, n. 10, p. 1383, doi. 10.1134/S1063782616100237
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Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs.
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- Semiconductors, 2016, v. 50, n. 9, p. 1241, doi. 10.1134/S1063782616090232
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Elastic strains and delocalized optical phonons in AlN/GaN superlattices.
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- Semiconductors, 2016, v. 50, n. 8, p. 1043, doi. 10.1134/S1063782616080169
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The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial.
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- Technical Physics Letters, 2016, v. 42, n. 7, p. 701, doi. 10.1134/S1063785016070075
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Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source.
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- Technical Physics Letters, 2016, v. 42, n. 5, p. 539, doi. 10.1134/S106378501605028X
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The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy.
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- Technical Physics Letters, 2016, v. 42, n. 4, p. 431, doi. 10.1134/S1063785016040192
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Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation.
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- Semiconductors, 2016, v. 50, n. 2, p. 244, doi. 10.1134/S1063782616020263
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Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 1, p. 19, doi. 10.1002/pssa.201532491
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Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency.
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- Semiconductors, 2015, v. 49, n. 11, p. 1516, doi. 10.1134/S1063782615110238
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The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy.
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- Technical Physics Letters, 2015, v. 41, n. 10, p. 1006, doi. 10.1134/S1063785015100247
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MOVPE of III-N LED structures with short technological process.
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- Technical Physics Letters, 2015, v. 41, n. 3, p. 213, doi. 10.1134/S1063785015030116
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Optical lattices of excitons in InGaN/GaN quantum well systems.
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- Semiconductors, 2015, v. 49, n. 1, p. 4, doi. 10.1134/S1063782615010042
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Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers.
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- Semiconductors, 2014, v. 48, n. 1, p. 53, doi. 10.1134/S1063782614010199
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X-ray diffraction study of short-period AlN/GaN superlattices.
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- Crystallography Reports, 2013, v. 58, n. 7, p. 953, doi. 10.1134/S1063774513070109
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Lattice dynamics of short-period AlN/GaN superlattices: Theory and experiment.
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- Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 3, p. 484, doi. 10.1002/pssa.201200700
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Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN.
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- Semiconductors, 2013, v. 47, n. 3, p. 437, doi. 10.1134/S1063782613030226
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Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region.
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- Semiconductors, 2012, v. 46, n. 10, p. 1281, doi. 10.1134/S1063782612100168
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InGaN/GaN heterostructures grown by submonolayer deposition.
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- Semiconductors, 2012, v. 46, n. 10, p. 1335, doi. 10.1134/S106378261210017X
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Monolithic white LEDs: Approaches, technology, design.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2012, v. 6, n. 3, p. 501, doi. 10.1134/S1027451012060237
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Double-cross epitaxial overgrowth of nonpolar gallium nitride layers.
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- Technical Physics Letters, 2012, v. 38, n. 3, p. 265, doi. 10.1134/S1063785012030285
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Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide.
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- Technical Physics Letters, 2012, v. 38, n. 3, p. 297, doi. 10.1134/S1063785012030261
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Specific features of gallium nitride selective epitaxy in round windows.
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- Technical Physics Letters, 2011, v. 37, n. 8, p. 735, doi. 10.1134/S1063785011080104
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Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them.
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- Semiconductors, 2011, v. 45, n. 2, p. 271, doi. 10.1134/S1063782611020230
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Study of tunneling transport of carriers in structures with an InGaN/GaN active region.
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- Semiconductors, 2010, v. 44, n. 12, p. 1567, doi. 10.1134/S1063782610120067
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High growth rate of AlN in a planetary MOVPE reactor.
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- Technical Physics Letters, 2010, v. 36, n. 12, p. 1133, doi. 10.1134/S1063785010120205
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High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530-560 nm range.
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- Technical Physics Letters, 2010, v. 36, n. 11, p. 1066, doi. 10.1134/S1063785010110283
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Formation of composite InGaN/GaN/InAlN quantum dots.
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- Semiconductors, 2010, v. 44, n. 10, p. 1338, doi. 10.1134/S1063782610100167
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The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes.
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- Semiconductors, 2010, v. 44, n. 7, p. 924, doi. 10.1134/S106378261007016X
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Structural and optical properties of InAlN/GaN distributed Bragg reflectors.
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- Semiconductors, 2010, v. 44, n. 7, p. 949, doi. 10.1134/S1063782610070201
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A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices.
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- Semiconductors, 2010, v. 44, n. 6, p. 808, doi. 10.1134/S1063782610060205
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Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes.
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- Semiconductors, 2010, v. 44, n. 1, p. 93, doi. 10.1134/S1063782610010161
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Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes.
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- Semiconductors, 2010, v. 44, n. 1, p. 123, doi. 10.1134/S1063782610010215
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Indium-rich island structures formed by in-situ nanomasking technology.
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- Technical Physics Letters, 2009, v. 35, n. 11, p. 1016, doi. 10.1134/S1063785009110133
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Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers.
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- Semiconductors, 2009, v. 43, n. 7, p. 963, doi. 10.1134/S1063782609070276
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Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs.
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- Semiconductors, 2009, v. 43, n. 6, p. 812, doi. 10.1134/S1063782609060232
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Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen.
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- Technical Physics Letters, 2008, v. 34, n. 11, p. 908, doi. 10.1134/S1063785008110023
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InGaAlN heterostructures for LEDs grown on patterned sapphire substrates.
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- Technical Physics Letters, 2008, v. 34, n. 11, p. 924, doi. 10.1134/S1063785008110072
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Energy characteristics of excitons in structures based on InGaN alloys.
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- Semiconductors, 2008, v. 42, n. 6, p. 720, doi. 10.1134/S1063782608060146
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