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Specific features of microhardness and thermodynamic stability of the Cd<sub>1-x</sub>Mn<sub>x</sub>Te solid solutions.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 3, p. 282, doi. 10.15407/spqeo25.03.282
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- Article
Energy band gap and electrical conductivity of Cd<sub>1-x</sub>Mn<sub>x</sub>Te alloys with different manganese content.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 4, p. 421
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- Article
Relaxation processes in conductivity of Cd<sub>1 − x </sub>Mn<sub> x </sub>Te crystals (0.02 < x < 0.55).
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1012, doi. 10.1134/S1063782608090029
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- Article
Self-purification effect in CdTe:Gd crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 1, p. 40, doi. 10.15407/spqeo11.01.040
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- Article
Compensation of hole conductivity in CdTe crystals doped with Cr.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 3, p. 77, doi. 10.15407/spqeo10.03.077
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- Article
Effect of treatment on the CdTe, Cd<sub>1- x </sub>Mn<sub> x </sub>Te and Cd<sub>1- x </sub>Zn<sub> x </sub>Te surface stoichiometry.
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- Physica Status Solidi (B), 2007, v. 244, n. 5, p. 1650, doi. 10.1002/pssb.200675124
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- Article
State of Cd<sub>1--X</sub>Zn<sub>X</sub>Te and Cd<sub>1--X</sub>Mn<sub>X</sub>Te surface depending on treatment type.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 1, p. 52
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- Article
Mechanisms of Incorporation of an Antimony Impurity into Cadmium Telluride Crystals.
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- Semiconductors, 2001, v. 35, n. 4, p. 405, doi. 10.1134/1.1365183
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- Article
Acceptors in Cd[sub 1-x]Mn[sub x]Te (x<0.1).
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- Semiconductors, 1997, v. 31, n. 8, p. 869, doi. 10.1134/1.1187243
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- Article