Found: 12
Select item for more details and to access through your institution.
Possibility of Pumping Lasers on Alexandrite and Ti:Sapphire Leds Emitting in the Range of 440–510 nm.
- Published in:
- Journal of Applied Spectroscopy, 2024, v. 91, n. 2, p. 286, doi. 10.1007/s10812-024-01719-7
- By:
- Publication type:
- Article
On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb).
- Published in:
- Semiconductors, 2023, v. 57, n. 13, p. 621, doi. 10.1134/S1063782623030193
- By:
- Publication type:
- Article
Contribution of Zone Fluctuation Potential and Disordering of Heteroboundaries to the Decreased Efficiency of Nitride-Based Leds.
- Published in:
- Journal of Applied Spectroscopy, 2023, v. 90, n. 1, p. 24, doi. 10.1007/s10812-023-01497-8
- By:
- Publication type:
- Article
Limiting Energy Capabilities of Powerful AlInGaN LEDs.
- Published in:
- Technical Physics Letters, 2022, v. 48, n. 4, p. 192, doi. 10.1134/S1063785022060049
- By:
- Publication type:
- Article
Features of Operation of High-Power AlInGaN LEDs at High Pulse Currents.
- Published in:
- Technical Physics Letters, 2021, v. 47, n. 11, p. 834, doi. 10.1134/S1063785021080290
- By:
- Publication type:
- Article
Temperature-Dependent Decrease in Efficiency in Power Blue InGaN/GaN LEDs.
- Published in:
- Technical Physics Letters, 2020, v. 46, n. 12, p. 1253, doi. 10.1134/S1063785020120275
- By:
- Publication type:
- Article
Experimental and theoretical study of electrical, thermal, and optical characteristics of InGaN/GaN high-power flip-chip LEDs.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 3, p. 466, doi. 10.1002/pssa.201200658
- By:
- Publication type:
- Article
A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices.
- Published in:
- Semiconductors, 2010, v. 44, n. 6, p. 808, doi. 10.1134/S1063782610060205
- By:
- Publication type:
- Article
A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy.
- Published in:
- Semiconductors, 2010, v. 44, n. 3, p. 373, doi. 10.1134/S1063782610030176
- By:
- Publication type:
- Article
Emission distribution in GaInAsSb/GaSb flip-chip diodes.
- Published in:
- Semiconductors, 2009, v. 43, n. 5, p. 662, doi. 10.1134/S1063782609050224
- By:
- Publication type:
- Article
Localized states in the active region of blue LEDs related to a system of extended defects.
- Published in:
- Technical Physics Letters, 2007, v. 33, n. 2, p. 143, doi. 10.1134/S1063785007020150
- By:
- Publication type:
- Article
High-power light-emitting diodes operating in the 1.9 to 2.1-μm spectral range.
- Published in:
- Semiconductors, 1999, v. 33, n. 2, p. 206, doi. 10.1134/1.1187671
- By:
- Publication type:
- Article