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Period of Droplet Quasi-Bessel Beam Generated with the Round-Tip Axicon.
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- Technical Physics Letters, 2023, v. 49, p. S280, doi. 10.1134/S1063785023010261
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- Article
Plasmachemical Etching in Postgrowth Technology of Photovoltaic Converters.
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- Technical Physics, 2023, v. 68, n. 11, p. 373, doi. 10.1134/S1063784223900681
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- Article
Post-Growth Technology of Multi-Junction Photovoltaic Converters Based on A3B5 Heterostructures.
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- Technical Physics, 2023, v. 68, n. 11, p. 492, doi. 10.1134/S1063784223900863
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- Article
Investigation of Methods for Texturing Light-Emitting Diodes Based on AlGaAs/GaAs Heterostructures.
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- Semiconductors, 2023, v. 57, n. 8, p. 359, doi. 10.1134/S1063782623090117
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- Article
Source of Indistinguishable Single Photons Based on Epitaxial InAs/GaAs Quantum Dots for Integration in Quantum Computing Schemes.
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- JETP Letters, 2021, v. 113, n. 4, p. 252, doi. 10.1134/S0021364021040093
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- Article
High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination.
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- Semiconductors, 2021, v. 55, n. 2, p. 243, doi. 10.1134/S1063782621020147
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- Article
Plasmachemical and Wet Etching in the Postgrowth Technology of Solar Cells Based on the GaInP/GaInAs/Ge Heterostructure.
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- Technical Physics Letters, 2021, v. 47, n. 2, p. 114, doi. 10.1134/S1063785021020103
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- Article
Measuring Geometric Parameters of a High-Power Infrared Laser Beam near the Focus for Applications in a Laser-Plasma Short-Wave Radiation Source.
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- Optics & Spectroscopy, 2020, v. 128, n. 8, p. 1338, doi. 10.1134/S0030400X2008007X
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- Article
Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode.
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- Semiconductors, 2020, v. 54, n. 1, p. 144, doi. 10.1134/S1063782620010108
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- Article
Generation of Droplet Quasi-Bessel Beams Using a Semiconductor Laser.
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- Optics & Spectroscopy, 2019, v. 127, n. 5, p. 848, doi. 10.1134/S0030400X19110079
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- Article
Studying the Formation of Antireflection Coatings on Multijunction Solar Cells.
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- Technical Physics Letters, 2019, v. 45, n. 10, p. 1024, doi. 10.1134/S1063785019100262
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- Article
Highly Efficient Semiconductor Emitter of Single Photons in the Red Spectral Range.
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- JETP Letters, 2019, v. 109, n. 3, p. 145, doi. 10.1134/S0021364019030135
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- Article
Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance.
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- Semiconductors, 2019, v. 53, n. 2, p. 200, doi. 10.1134/S1063782619020106
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- Article
Absolutely Calibrated Spectrally Resolved Measurements of Xe Laser Plasma Radiation Intensity in the EUV Range.
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- Technical Physics, 2018, v. 63, n. 10, p. 1507, doi. 10.1134/S1063784218100080
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- Article
Lasing in 9.6-μm Quantum Cascade Lasers.
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- Technical Physics, 2018, v. 63, n. 10, p. 1511, doi. 10.1134/S1063784218100043
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- Article
Generation of Droplet Bessel Beams Using a Semiconductor Laser.
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- Technical Physics Letters, 2018, v. 44, n. 10, p. 887, doi. 10.1134/S1063785018100097
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- Article
Quantum-Cascade Lasers Generating at the 4.8-μm Wavelength at Room Temperature.
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- Technical Physics Letters, 2018, v. 44, n. 9, p. 814, doi. 10.1134/S1063785018090249
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- Article
Single-Photon Emitter at 80 K Based on a Dielectric Nanoantenna with a CdSe/ZnSe Quantum Dot.
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- JETP Letters, 2018, v. 108, n. 3, p. 201, doi. 10.1134/S0021364018150109
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- Article
On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers.
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- Semiconductors, 2018, v. 52, n. 7, p. 950, doi. 10.1134/S106378261807014X
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- Article
The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers.
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- Technical Physics Letters, 2018, v. 44, n. 1, p. 28, doi. 10.1134/S1063785018010042
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- Article
A Design and New Functionality of Antiwaveguiding Vertical-Cavity Surface-Emitting Lasers for a Wavelength of 850 nm.
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- Technical Physics Letters, 2018, v. 44, n. 1, p. 36, doi. 10.1134/S1063785018010078
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- Article
Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 17, p. 1354, doi. 10.1049/el.2015.2325
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- Article
Continuous‐wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 16, p. 1354, doi. 10.1049/el.2015.2325
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- Article
Absorption in laser structures with coupled and uncoupled quantum dots in an electric field at room temperature.
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- Semiconductors, 2009, v. 43, n. 4, p. 490, doi. 10.1134/S1063782609040150
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- Article
Optically pumped midinfrared (λ = 3.6 μm) light-emitting diodes based on indium arsenide with photonic crystals.
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- Technical Physics Letters, 2008, v. 34, n. 5, p. 405, doi. 10.1134/S1063785008050131
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Free-standing optical filters for a nanolithography source operating in the 12–15 nm wavelength range.
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- Technical Physics Letters, 2007, v. 33, n. 6, p. 508, doi. 10.1134/S1063785007060193
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- Article
P--i--n Structures Based on High-Ohmic Gettered Gallium Arsenide for α Particle Detectors.
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- Technical Physics Letters, 2006, v. 32, n. 11, p. 987, doi. 10.1134/S1063785006110241
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- Article
Design and Technology of Vertical-Cavity Surface-Emitting Lasers with Nonconducting Epitaxial Mirrors.
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- Semiconductors, 2003, v. 37, n. 10, p. 1234, doi. 10.1134/1.1619524
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- Article
Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 253, doi. 10.1134/1.1262443
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- Article