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Measurement of the Parameters of Three-Element Nonresonant Dipoles with Two Reactive Elements.
- Published in:
- Measurement Techniques, 2017, v. 60, n. 9, p. 934, doi. 10.1007/s11018-017-1296-y
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- Article
Method for Contactless Three-Component Vibration Measurement.
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- Measurement Techniques, 2017, v. 59, n. 12, p. 1291, doi. 10.1007/s11018-017-1131-5
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- Article
An Estimate of the Error in Constructing a Geometric Model of an Antenna Mirror by the Delone Method.
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- Measurement Techniques, 2014, v. 57, n. 8, p. 919, doi. 10.1007/s11018-014-0560-7
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- Article
Modeling the Radiation of a Mirror Antenna taking Vibration Deformations into Account.
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- Measurement Techniques, 2014, v. 56, n. 11, p. 1280, doi. 10.1007/s11018-014-0368-5
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- Article
Measurement of the parameters of three-element nonresonance two-terminal networks at a fixed frequency.
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- Measurement Techniques, 2013, v. 55, n. 11, p. 1267, doi. 10.1007/s11018-013-0119-z
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- Article
Systems for calibration testing of coriolis flowmeters.
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- Measurement Techniques, 2012, v. 55, n. 8, p. 927, doi. 10.1007/s11018-012-0062-4
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- Article
A method of automatic verification of Coriolis flowmeters in the field.
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- Measurement Techniques, 2012, v. 55, n. 2, p. 151, doi. 10.1007/s11018-012-9932-z
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- Article
A finite-element model of the thermal influences on a microstrip antenna.
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- Measurement Techniques, 2011, v. 54, n. 2, p. 207, doi. 10.1007/s11018-011-9707-y
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- Article
Electromagnetic screening of the elements of a high-voltage vacuum divider.
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- Measurement Techniques, 2011, v. 54, n. 2, p. 200, doi. 10.1007/s11018-011-9706-z
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- Article
A comparative analysis of the accuracy and dynamic characteristics of two systems for converting the parameters of passive electrical quantities into an active quantity.
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- Measurement Techniques, 2007, v. 50, n. 2, p. 184, doi. 10.1007/s11018-007-0044-0
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- Article
Theoretical Analysis of the Effect of dU/dt in 4H-SiC Thyristor Structures.
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- Technical Physics, 2018, v. 63, n. 10, p. 1497, doi. 10.1134/S1063784218100250
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- Article
Switching characteristics of an MOSFET-controlled high-power integrated thyristor.
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- Technical Physics, 2006, v. 51, n. 5, p. 609, doi. 10.1134/S1063784206050112
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- Article
Static and Dynamic Characteristics of an MOS-Controlled High-Power Integrated Thyristor.
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- Technical Physics, 2005, v. 50, n. 7, p. 896, doi. 10.1134/1.1994971
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- Article
I–V Characteristics of High-Power Diode Structures with Sharply Asymmetric Injection Ability of the Emitters.
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- Semiconductors, 2021, v. 55, n. 1, p. S22, doi. 10.1134/S1063782621060142
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- Article
High-Power Schottky Diodes with a Negative-Differential-Resistance Portion in the I–V Characteristic.
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- Semiconductors, 2021, v. 55, n. 1, p. 92, doi. 10.1134/S1063782621010164
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- Article
S-Shaped I–V Characteristics of High-Power Schottky Diodes at High Current Densities.
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- Semiconductors, 2020, v. 54, n. 5, p. 567, doi. 10.1134/S1063782620050152
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- Article
Multidimensional dU/dT Effect in High-Power Thyristors.
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- Semiconductors, 2020, v. 54, n. 1, p. 112, doi. 10.1134/S1063782620010273
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- Article
Specific features of dynamic injection and base layer modulation processes in power n <sup>+</sup>- p- p <sup>+</sup> diodes.
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- Semiconductors, 2007, v. 41, n. 11, p. 1381, doi. 10.1134/S1063782607110206
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- Article
A New Physical Mechanism for the Formation of Critical Turn-On Charge in Thyristor Structures.
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- Semiconductors, 2005, v. 39, n. 3, p. 354, doi. 10.1134/1.1882801
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- Article
Semiempirical Model of Carrier Mobility in Silicon Carbide for Analyzing Its Dependence on Temperature and Doping Level.
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- Semiconductors, 2001, v. 35, n. 4, p. 394, doi. 10.1134/1.1365181
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- Article
Subthreshold characteristics of electrostatically controlled transistors and thyristors. 1. Shallow planar gate.
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- Semiconductors, 1998, v. 32, n. 2, p. 225, doi. 10.1134/1.1187347
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- Article
METHODOLOGY FOR IMPROVING THE CYBER THREAT PROTECTION SYSTEM.
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- Vestnik KazUTB, 2024, v. 2, n. 23, p. 127, doi. 10.58805/kazutb.v.2.23-483
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- Article